Effect of radiation-induced vacancy saturation on the first-order phase transformation in nanoparticles: insights from a model

• Aram Shirinyan and
• Yuriy Bilogorodskyy

Beilstein J. Nanotechnol. 2024, 15, 1453–1472, doi:10.3762/bjnano.15.117

• (dpa) (equivalent to 40 years of service). Under irradiation, the main point defects are vacancies and interstitials. Point defects can develop into clusters of dislocations, stacking faults, or voids. They can also relax onto existing sinks such as dislocation loops, grain boundaries, phase interfaces

• , in nanosilver, a dislocation loop migrates to the free surface of the particle within 0.1 s [4]. This suggests that dislocation loops and interstitials are leveled out fairly quickly in nanoparticles, making vacancies the main defects that affect the material’s properties. According to experimental

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• The RBS-c is an effective characterization technique for the estimation of amorphous depth and defect concentration in implanted single crystals. The RBS-c analysis for point defects shows a linear behaviour in defect density with ion fluence. The formation of highly dense dislocation loops beyond the

Annealing-induced recovery of indents in thin Au(Fe) bilayer films

• Anna Kosinova,
• Ruth Schwaiger,
• Leonid Klinger and
• Eugen Rabkin

Beilstein J. Nanotechnol. 2016, 7, 2088–2099, doi:10.3762/bjnano.7.199

• dissipation and the formation of shallow depressions nearby after subsequent annealing treatments. This annealing-induced evolution of nanoindents was interpreted in terms of annihilation of dislocation loops generated during indentation, accompanied by the formation of nanopores at the grain boundaries and

• their subsequent dissolution. The application of the processes uncovered in this work show great potential for the patterning of thin films. Keywords: annealing; diffusion; dislocation loops; nanoindenation; thin films; Introduction The intentional introduction of defects into bulk metallic material

• defies the condition of mass conservation. In what follows, we will discuss the possible mechanisms of indent→hillock→depression transformations. This chain of relaxation processes is a result of a complex, synergetic interplay of different types of defects, including dislocation loops, grain boundaries

On the structure of grain/interphase boundaries and interfaces

• K. Anantha Padmanabhan and
• Herbert Gleiter

Beilstein J. Nanotechnol. 2014, 5, 1603–1615, doi:10.3762/bjnano.5.172

• examination of Figure 4 reveals that the deformation of oblate spheroids proceeds along a grain boundary leaving behind circular loops. By definition, they constitute dislocation loops of zero Burgers vector in the Volterra sense. (They cannot, however, be described in terms of crystallographic concepts

• of “dislocation loops” in our continuum approach is equivalent to the propagation of extrinsic boundary dislocations assumed for boundary sliding in the analysis of Nazarov et al. [63]. More complicated situations So far two extreme cases were examined in detail. (a) Considering the entire boundary