Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• using Equation 3. The microstrain decreases with increasing substrate temperature. This implies that imperfections along grain boundaries decrease with temperature. The dislocation density, which is defined as the average number of dislocations present per unit volume in a crystal was calculated using

Effect of radiation-induced vacancy saturation on the first-order phase transformation in nanoparticles: insights from a model

• Aram Shirinyan and
• Yuriy Bilogorodskyy

Beilstein J. Nanotechnol. 2024, 15, 1453–1472, doi:10.3762/bjnano.15.117

• (dpa) (equivalent to 40 years of service). Under irradiation, the main point defects are vacancies and interstitials. Point defects can develop into clusters of dislocations, stacking faults, or voids. They can also relax onto existing sinks such as dislocation loops, grain boundaries, phase interfaces

• , and cavities [1][2]. Experimental studies on Pd have shown that the defect density generally increases with grain size; in grains smaller than 30 nm, no defects were observed [3], suggesting that large defects (clusters and dislocations) do not exist in small nanoparticles. One possible explanation is

• based on the fact that the movement of dislocations is impeded by particle surfaces (grain boundaries) quite rapidly. For example, a transmission electron microscopy study (irradiation with Kr ions at 1 MeV at room temperature and an average defect generation rate of about 2 × 10−3 dpa·s−1) showed that

Effects of cutting tool geometry on material removal of a gradient nanograined CoCrNi medium entropy alloy

• Yu-Sheng Lu,
• Yu-Xuan Hung,
• Thi-Xuyen Bui and
• Te-Hua Fang

Beilstein J. Nanotechnol. 2024, 15, 925–940, doi:10.3762/bjnano.15.76

• phase usually accompanies partial dislocations such as twin boundaries and stacking faults. The results show that the plastic deformation of GNG CoCrNi MEAs with small grain sizes is mainly dominated by grain boundary slip and grain rotation [37][38]. The grain boundary energy is higher between grains

• with bigger size differences. The grains release energy as the machining proceeds and form larger grains, and the grain boundaries pin stacking faults and dislocations. When the grain size is large enough, partial dislocations such as stacking faults and twin boundaries are less susceptible to grain

• obvious. However, it is also affected by chip shape and defects such as grain boundaries and dislocations. The cutting force does not increase significantly at a cutting depth of 0.5 nm. Only as the cutting length increases, the number of accumulate atoms in the grooves slightly increases. When the

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• . Analysis of the predominant peak was conducted to assess variations in crystallite size and dislocations (Figure 4B). A distinct contrast between the as-grown and 1× sample is observed for each of these parameters, whereas the graph flattens for the sequenced samples. The nanocrystallite size was estimated

On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• and dislocations are currently under development [13][14]. This leads to the situation that the role of grain boundaries for graphene-based sensing of strain, pressure, and motion has not been explored and remains unresolved [15][16][17][18], although in CVD graphene the domain size is typically of

• would mean that all the strain energy provided externally ends up at GBs leading to movements of dislocations at GBs or fractures at GBs. Fitting the tunneling + destruction model to our data, we find that the initial tunneling distance has a value of 3.6 nm, which is comparable to the nanographene

• diffusional creep processes. The rotation occurs because of a change in the content of GB dislocations, which can change the GB angle between the grains (Frank–Bilby equation). We cannot completely exclude that GB rotation occurs to some extent also in strained nanocrystalline graphene. Figure 4 shows a

Density functional theory study of Au-fcc/Ge and Au-hcp/Ge interfaces

• Olga Sikora,
• Małgorzata Sternik,
• Benedykt R. Jany,
• Franciszek Krok,
• Przemysław Piekarz and
• Andrzej M. Oleś

Beilstein J. Nanotechnol. 2023, 14, 1093–1105, doi:10.3762/bjnano.14.90

• interfaces. However, significant atomic displacements were found that result mainly from an uneven distribution of Au–Ge distances and can be reduced if the point defects are included. The poor matching of Au-hcp and Ge(111) structures indicates that other defects (dislocations or steps) should be also

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• plasmonic metals or their alloys [23][24][25][26][27][28][29][30][31][32]. The chemical and electrochemical etching of GaN heteroepitaxial layers leads to various nanostructures formed on line defects (dislocations), such as straight nanopillars, bunches of nanopillars, and pits [31][32]. The nanostructured

• in the formation of nanocolumns on line defects (dislocations), as was demonstrated in [45]. The nanostructured GaN platforms were then coated with Ag using a Quorum Q150TS sputter coater (Quorum Technologies Ltd., Laughton, UK) with a cleaning oxidized target function engaged [32]. The thickness of

Is the Ne operation of the helium ion microscope suitable for electron backscatter diffraction sample preparation?

• Annalena Wolff

Beilstein J. Nanotechnol. 2021, 12, 965–983, doi:10.3762/bjnano.12.73

• produce artefacts that would compromise the TEM analysis. Monte Carlo simulations were performed using the program Stopping and Range of Ions in Matter (SRIM) to better understand the underpinning ion–solid interactions for the different settings [22]. The extent of created dislocations, vacancies as well

• hundreds of nanometers thick and significantly larger than the interaction volume. The TEM image (Figure 6f) shows a different behavior in comparison to the control sample, with more dislocations, defects, and precipitates (indicated by arrows) visible. The SAED pattern (Figure 6g) shows that the sample is

• sits on its anti-site which can be imagined as a region consisting of anti-site defects. These regions could have been formed as a result of the high Ga implantation concentration and induced dislocations/vacancies within this area. The same behavior was observed for the 25 keV Ne 0° incidence angle

Effects of temperature and repeat layer spacing on mechanical properties of graphene/polycrystalline copper nanolaminated composites under shear loading

• Chia-Wei Huang,
• Man-Ping Chang and
• Te-Hua Fang

Beilstein J. Nanotechnol. 2021, 12, 863–877, doi:10.3762/bjnano.12.65

• as the temperature increases, the content of Shockley dislocations will increase and the maximum shear stress of the zigzag and armchair directions also decreases. The mechanical strength of the zigzag direction is more dependent on the temperature than that of the armchair direction. Moreover, self

• series of studies on three-dimensional nanolaminated graphene–metal composites have been carried out. Several studies revealed that the graphene interface provides a barrier to impede the propagation of dislocations, and simultaneously enhances the mechanical properties of the composites [22][23][24][25

• dislocations, the out-of-plane displacement, and the self-healing behavior of the graphene layer. The obtained results provide valuable information for the design of three-dimensional graphene composites. Computational Method A model of the graphene/polycrystalline copper nanolaminated (GPCuNL) composites was

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

Molecular dynamics modeling of the influence forming process parameters on the structure and morphology of a superconducting spin valve

• Alexander Vakhrushev,
• Aleksey Fedotov,
• Vladimir Boian,
• Roman Morari and
• Anatolie Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1776–1788, doi:10.3762/bjnano.11.160

• size of the deposited clusters and does not always have time to rebuild upon direct contact with the surface. Due to the effects that arise, inhomogeneity, dislocations, and voids can occur in the material. The deviations in the constructed composition in the upper layers of the nanocomposite were due

• inhomogeneities, dislocations and voids inside the formed nanosystem due to the preliminary clustering of free atoms. In order to obtain representative results that correspond to real technological processes, it was found to be critical to model the growth mechanisms of nanoscale films and layers using a

Self-assembly and spectroscopic fingerprints of photoactive pyrenyl tectons on hBN/Cu(111)

• Domenik M. Zimmermann,
• Knud Seufert,
• Luka Ðorđević,
• Tobias Hoh,
• Sushobhan Joshi,
• Tomas Marangoni,
• Davide Bonifazi and
• Willi Auwärter

Beilstein J. Nanotechnol. 2020, 11, 1470–1483, doi:10.3762/bjnano.11.130

• arrays is usually rather limited (<30 nm), with the narrow transition regions τ representing dislocations (Figure 3a) or mirror domain boundaries (Figure S6, Supporting Information File 1). STM images resolving individual molecules (Figure 3b) revealed a bright protrusion, attributed to the pyrene core

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

• Majid Sanaeepur

Beilstein J. Nanotechnol. 2020, 11, 688–694, doi:10.3762/bjnano.11.56

• semiconductors is degraded by dislocations and lattice mismatch at the interface of different bandgap materials, the RTDs based on heterojunctions between armchair graphene nanoribbons (AGNRs) and armchair boron nitride nanoribbons (ABNNRs) have shown superior performance because of the very low lattice mismatch

Observation of unexpected uniaxial magnetic anisotropy in La_2/3Sr_1/3MnO₃ films by a BaTiO₃ overlayer in an artificial multiferroic bilayer

• John E. Ordóñez,
• Lorena Marín,
• Luis A. Rodríguez,
• Pedro A. Algarabel,
• José A. Pardo,
• Roger Guzmán,
• Luis Morellón,
• César Magén,
• Etienne Snoeck,
• María E. Gómez and
• Manuel R. Ibarra

Beilstein J. Nanotechnol. 2020, 11, 651–661, doi:10.3762/bjnano.11.51

• reported [2][47][48][49][50] due to their small mismatch (≈0.7%); dislocations appear in LSMO under compressive strain [51][52][53], while twin walls are expected under tensile strain [54][55][56] with the thickness-dependent elastic deformations already in LSMO/STO systems [54]. Linear defects in the BTO

• layer are promoted by the large mismatch between the lattice parameters of the BTO and the strained LSMO film (≈2.4%). They correspond to misfit dislocations created parallel and perpendicular to the interface and favor the relaxation of the BTO atomic layers placed far from the BTO/LSMO interface. For

• relaxation of the BTO layer, hence horizontal misfit dislocations are not formed. Similar profiles were extracted from the εzz strain maps. Compared to the εxx, the εzz profiles present noisier behavior inherent to the GPA method [57], with an extended and strong variation around each interface that does not

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

• Markus Tautz,
• Maren T. Kuchenbrod,
• Joachim Hertkorn,
• Robert Weinberger,
• Martin Welzel,
• Arno Pfitzner and
• David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

• phosphor-converted white LEDs [2]. To reach a high internal quantum efficiency (IQE), crystal quality must be high in terms of low dislocation density [3]. Dislocations cause non-radiative recombination of induced electron hole pairs and thus lower efficiency. That is why considerable effort is put into

• variation in dislocation density. The bottommost 2D GaN layer was increased in thickness from 300 nm (A) to 1000 nm (B). A change to 3D growth conditions was applied to reduce defects caused by bending of dislocations into lateral direction. It is well known that 3D growth can be initiated by various growth

• methods, e.g., high pressure [17]. Sample C consists of a 3000 nm-thick single 2D GaN layer. D featured a modified 2D–3D transition leading to a higher number of dislocations penetrating the 2D–3D interface. In E, a sequence of two subsequent 2D–3D transitions was prepared, which were separated by a 3D

Abrupt elastic-to-plastic transition in pentagonal nanowires under bending

• Sergei Vlassov,
• Magnus Mets,
• Boris Polyakov,
• Jianjun Bian,
• Leonid Dorogin and
• Vahur Zadin

Beilstein J. Nanotechnol. 2019, 10, 2468–2476, doi:10.3762/bjnano.10.237

• withstand severe deformation in the elastic regime without fracture. The coating may possibly prevent formation of dislocations. Mechanical durability under high and inhomogeneous strain fields is an important aspect of exploiting Ag and Au NWs in applications like waveguiding or conductive networks in

• uniform structure hardening. Five-fold grain boundaries intersect with all possible slip systems restricting the motion of dislocations along any slip direction by the twin boundaries that extend to the center of the wire preventing the initiation of plastic deformation. This makes five-fold twinned NW

• agrees very well with the transition angles 163 ± 5.6° observed in the experiment. Dislocations nucleate from the free surface as marked by the white circles (Figure 8i). After nucleation, partial dislocations glide toward the core region of the NW and experience the impediment from the existing twin

Design and facile synthesis of defect-rich C-MoS₂/rGO nanosheets for enhanced lithium–sulfur battery performance

• Chengxiang Tian,
• Juwei Wu,
• Zheng Ma,
• Bo Li,
• Pengcheng Li,
• Xiaotao Zu and
• Xia Xiang

Beilstein J. Nanotechnol. 2019, 10, 2251–2260, doi:10.3762/bjnano.10.217

• Figure 2e,f. The morphology of nanosheets does not change even after annealing at 800 °C, as shown in Figure S1a–d (Supporting Information File 1). An interplanar spacing of 0.27 nm can be observed in Figure 2e and Figure 2g. Numerous distortions and dislocations can be observed, which indicates a defect

Ion mobility and material transport on KBr in air as a function of the relative humidity

• Dominik J. Kirpal,
• Korbinian Pürckhauer,
• Alfred J. Weymouth and
• Franz J. Giessibl

Beilstein J. Nanotechnol. 2019, 10, 2084–2093, doi:10.3762/bjnano.10.203

• with a lattice constant of a = 660 pm [25]. A clean and dry surface can be generated by cleaving the bulk crystal with a knife along the [100] direction. The surface shows large atomically flat terraces with heights ranging from one to a few atom layers. Steps, screw dislocations, small holes and

Fabrication and characterization of Si_1−xGe_x nanocrystals in as-grown and annealed structures: a comparative study

• Muhammad Taha Sultan,
• Adrian Valentin Maraloiu,
• Ionel Stavarache,
• Jón Tómas Gudmundsson,
• Andrei Manolescu,
• Valentin Serban Teodorescu,
• Magdalena Lidia Ciurea and
• Halldór Gudfinnur Svavarsson

Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182

• mainly related to the coalescence of small nanoparticles when the structure underwent annealing. A part of the stress in the structure is relieved by the formation of dislocations and the remaining stress is accommodated as local stress at the NC/matrix interface. Photocurrent measurements The

Kelvin probe force microscopy work function characterization of transition metal oxide crystals under ongoing reduction and oxidation

• Dominik Wrana,
• Karol Cieślik,
• Wojciech Belza,
• Christian Rodenbücher,
• Krzysztof Szot and
• Franciszek Krok

Beilstein J. Nanotechnol. 2019, 10, 1596–1607, doi:10.3762/bjnano.10.155

• transformation from (1×1) to (√5×√5)R26.6°, and in the vicinity of extended defects in a crystal (dislocations) which act as easy conduction paths for electrons. Oxygen vacancy formation, and therefore Ti3+ valence, results in the appearance of new t2g electron states within Ti 3d, which are below the conduction

Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere

• Petr Knotek,
• Tomáš Plecháček,
• Jan Smolík,
• Petr Kutálek,
• Filip Dvořák,
• Milan Vlček,
• Jiří Navrátil and
• Čestmír Drašar

Beilstein J. Nanotechnol. 2019, 10, 1401–1411, doi:10.3762/bjnano.10.138

• been observed for Si [51][52], Ti, Ni or Al [53][54][55], carbon [56] and organic–inorganic compounds [57]. We suggest, in our case, that OH− or O−/O2− ions diffuse through our polycrystalline Au layer with many defects (grain boundaries, dislocations) forced by the strong electric field (8 V/53 nm of

Sub-wavelength waveguide properties of 1D and surface-functionalized SnO₂ nanostructures of various morphologies

• Venkataramana Bonu,
• Binaya Kumar Sahu,
• Arindam Das,
• Sankarakumar Amirthapandian,
• Sandip Dhara and
• Harish C. Barshilia

Beilstein J. Nanotechnol. 2019, 10, 379–388, doi:10.3762/bjnano.10.37

• corresponding SAED pattern further demonstrates the single crystalline nature of the NWs (Figure 2c). It is indexed with the [020] zone axis of the rutile SnO2 phase. The electron diffraction study reveals crystalline NWs with no obvious extended defects such as dislocations or stacking faults. Figure 3 shows

A Ni(OH)₂ nanopetals network for high-performance supercapacitors synthesized by immersing Ni nanofoam in water

• Donghui Zheng,
• Man Li,
• Yongyan Li,
• Chunling Qin,
• Yichao Wang and
• Zhifeng Wang

Beilstein J. Nanotechnol. 2019, 10, 281–293, doi:10.3762/bjnano.10.27

• -NF/MG after immersion in water. A possible growth mechanism of Ni(OH)2 nanopetals is proposed in the following. A large amount of defects (twin boundaries, stack faults and/or dislocations) were generated in the nanoporous metal ligament surface after dealloying [35]. When the nanoporous Ni (Ni-NF

Hydrogen-induced plasticity in nanoporous palladium

• Markus Gößler,
• Eva-Maria Steyskal,
• Markus Stütz,
• Norbert Enzinger and
• Roland Würschum

Beilstein J. Nanotechnol. 2018, 9, 3013–3024, doi:10.3762/bjnano.9.280

• above-mentioned tunable properties in nanoporous metals. The deformation mechanism in such structures has been discussed in detail. Since nanoporous materials exhibit high surface-to-volume ratios, moving dislocations may escape crystals via the surface, which may lead to a scenario of dislocation

• at low strains in npAu. Despite the local dislocation activity in the ligaments, macroscopic plasticity, involving dislocations travelling larger distances in the network structure, is hard to achieve in nanoporous metals [15]. Plastic deformation in npPd has not been the subject of experimental

• proceed incoherently, inducing dislocations to reduce internal stresses [34]. A coherent phase transition on the other hand involves the occurrence of internal stresses due to spatial variations of the lattice spacing, while no dislocations are induced. Therefore, particles must be sufficiently small in

Low cost tips for tip-enhanced Raman spectroscopy fabricated by two-step electrochemical etching of 125 µm diameter gold wires

• Antonino Foti,
• Francesco Barreca,
• Enza Fazio,
• Cristiano D’Andrea,
• Paolo Matteini,
• Onofrio Maria Maragò and
• Pietro Giuseppe Gucciardi

Beilstein J. Nanotechnol. 2018, 9, 2718–2729, doi:10.3762/bjnano.9.254

• sections of the gold wire supplied by the producer, we end up with very rough tips (Figure 5), even in the presence of “fresh” solutions. Rough surfaces have been explained [46] with the presence of dislocations and grains in the 100–500 nm scale (consequence of the wire production process), in which the