Interface properties of nanostructured carbon-coated biological implants: an overview

• Mattia Bartoli,
• Francesca Cardano,
• Erik Piatti,
• Stefania Lettieri,
• Andrea Fin and
• Alberto Tagliaferro

Beilstein J. Nanotechnol. 2024, 15, 1041–1053, doi:10.3762/bjnano.15.85

• rings, which prevents planar deformations [33]. The same phenomenon explains the high thermal conductivity of up to 3000 W·m−1·K−1 [34][35] and the outstanding electrical properties [36][37][38]. Compared to conventional 3D materials, the understanding of electronic transport and carrier dynamics in

• graphene is significantly complicated by the extreme anisotropy intrinsic to its crystal structure and its large compositional and structural variability [39]. Beyond the obvious consequences arising from the chemical composition, some of the main aspects affecting electronic transport in graphene are

• graphene-based composites [39]. These aspects are especially relevant in determining the in-plane electronic transport within each layer of graphene (intra-layer transport). Conversely, the electronic coupling between different layers dominates the out-of-plane electronic transport from one layer to

Humidity-dependent electrical performance of CuO nanowire networks studied by electrochemical impedance spectroscopy

• Jelena Kosmaca,
• Juris Katkevics,
• Jana Andzane,
• Raitis Sondors,
• Liga Jasulaneca,
• Raimonds Meija,
• Kiryl Niherysh,
• Yelyzaveta Rublova and
• Donats Erts

Beilstein J. Nanotechnol. 2023, 14, 683–691, doi:10.3762/bjnano.14.54

• chemisorption and physisorption at the nanowire interface, which suppress electronic transport inside the p-type semiconductor nanowire but enhance ionic transport in the water layers adsorbed on the nanowire surface. Possible physicochemical processes at the nanowire surface are discussed in line with

• explained by parallel contributions to the net electrical signal from different conduction paths, for example, electronic and ionic transport inside the material and on the surface [29]. First, the conduction at very low RH is presumed to be primarily due to electronic transport inside the material. The CuO

• with the adsorbed oxygen and Cu sites on the surface also neutralize holes: [30]. Hence, the impedance can increase with increasing RH (up to about 50% in our system) because of the affected electronic transport inside the material. Simultaneously, as the hydroxy groups begin to form clusters on the

Bismuth-based nanostructured photocatalysts for the remediation of antibiotics and organic dyes

• Akeem Adeyemi Oladipo and
• Faisal Suleiman Mustafa

Beilstein J. Nanotechnol. 2023, 14, 291–321, doi:10.3762/bjnano.14.26

• important for electronic transport and semimetal-to-semiconductor transition, as well as its highly anisotropic Fermi surface (with an electron and hole Fermi energies of 27.2 and 10.8 meV, respectively), which results in an extremely low carrier density of around 3 × 1017 cm−3 [78] and very little overlap

Enhanced electronic transport properties of Te roll-like nanostructures

• E. R. Viana,
• N. Cifuentes and
• J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

• work, the electronic transport properties of Te roll-like nanostructures were investigated in a broad temperature range by fabricating single-nanostructure back-gated field-effect-transistors via photolithography. These one-dimensional nanostructures, with a unique roll-like morphology, were produced

• charges have been studied in p-type Te NBs [13]. In this work, we have studied the electronic transport properties of a distinct one-dimensional t-Te nanostructure with a roll-like morphology, which resembles cinnamon sticks. The nanostructures were obtained by a facile PVP-assisted hydrothermal route

• (TEM), and selected-area electron diffraction (SAED). Individual Te roll-like nanobelts were connected in back-gate FETs and measured to characterize the electronic transport as a function of temperature. Methods Growth of Te roll-like one-dimensional nanostructures Te nanostructures were grown via an

Investigation of electron-induced cross-linking of self-assembled monolayers by scanning tunneling microscopy

• Patrick Stohmann,
• Sascha Koch,
• Yang Yang,
• Christopher David Kaiser,
• Julian Ehrens,
• Jürgen Schnack,
• Niklas Biere,
• Dario Anselmetti,
• Armin Gölzhäuser and
• Xianghui Zhang

Beilstein J. Nanotechnol. 2022, 13, 462–471, doi:10.3762/bjnano.13.39

• create ultrathin carbon nanomembranes (CNMs) [25][26]. Depending on the precursor molecules and the exposure conditions, thickness [27], mechanical stiffness [28], and electronic transport characteristics [29][30] of CNMs can be tailored. Carbon nanomembranes have been applied as electron microscopy

Tunable superconducting neurons for networks based on radial basis functions

• Andrey E. Schegolev,
• Nikolay V. Klenov,
• Sergey V. Bakurskiy,
• Igor I. Soloviev,
• Mikhail Yu. Kupriyanov,
• Maxim V. Tereshonok and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2022, 13, 444–454, doi:10.3762/bjnano.13.37

• layers supports the superconducting order parameter and increases the efficiency of the spin valve effect [58]. Here, we propose a development of this approach, allowing one to significantly increase the effective variations in the kinetic inductance. We study proximity effect and electronic transport in

Measurement of polarization effects in dual-phase ceria-based oxygen permeation membranes using Kelvin probe force microscopy

• Kerstin Neuhaus,
• Christina Schmidt,
• Liudmila Fischer,
• Wilhelm Albert Meulenberg,
• Ke Ran,
• Joachim Mayer and
• Stefan Baumann

Beilstein J. Nanotechnol. 2021, 12, 1380–1391, doi:10.3762/bjnano.12.102

• indicator for local changes of the defect chemistry, as it is directly related to the local Fermi level [20]. The defect chemistry of acceptor-doped ceria and the oxide ion/electronic transport within ceria single-phase materials and also for ceria-based dual-phase materials is well understood at

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• the high sensitivity of the electronic transport properties of YBCO to point defects introduced into the lattice [43]. The same study also confirmed that minimal lateral scatter of the ions in the YBCO thin film occurs; even at the higher doses used to induce amorphisity, the irradiated channels

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• the wires. For instance, Au, generally used as catalyst for the growth of various semiconductor NWs, acts as a deep-level trap in germanium bulk and NWs, modifying the electronic transport properties [5]. Strain-induced elongation is a mechanism [34] that can lead to either epitaxial or endotaxial

Kondo effects in small-bandgap carbon nanotube quantum dots

• Patryk Florków,
• Damian Krychowski and
• Stanisław Lipiński

Beilstein J. Nanotechnol. 2020, 11, 1873–1890, doi:10.3762/bjnano.11.169

• close to perpendicular. When the field approaches a transverse orientation a crossover from SU(2) or SU(3) symmetry into SU(4) is observed. Keywords: carbon nanotubes; Kondo effect; mesoscopic transport; quantum dots; valleytronics; Introduction Due to their remarkable electronic, transport

Controlling the proximity effect in a Co/Nb multilayer: the properties of electronic transport

• Sergey Bakurskiy,
• Mikhail Kupriyanov,
• Nikolay V. Klenov,
• Igor Soloviev,
• Andrey Schegolev,
• Roman Morari,
• Yury Khaydukov and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1336–1345, doi:10.3762/bjnano.11.118

• /F structure. To test the concept of the magnetically tunable kinetic inductor, we calculated the superconducting order parameter in S/[F1/s/F2/s]n superlattices, as presented in Figure 1. We studied the proximity effect and electronic transport in the multilayer hybrid structures in the frame of

• multilayer structure is possible. In addition, the temperature of this transition depends on the magnetic environment. Given the aforementioned results, one can conclude that the electronic transport properties in the multilayer structure S/[F1/s/F2/s]n can be used to create different switching electronic

3D superconducting hollow nanowires with tailored diameters grown by focused He⁺ beam direct writing

• Rosa Córdoba,
• Alfonso Ibarra,
• Dominique Mailly,
• Isabel Guillamón,
• Hermann Suderow and
• José María De Teresa

Beilstein J. Nanotechnol. 2020, 11, 1198–1206, doi:10.3762/bjnano.11.104

• for quantum computation. The behavior of nanosized superconductors as one-dimensional quantum oscillators [1], Josephson junction arrays [2], electronic transport devices [3][4][5][6][7], very small-scale devices [8][9], micrometer-scale coolers [10], or thermal and spin sensors [11][12] has been

Transition from freestanding SnO₂ nanowires to laterally aligned nanowires with a simulation-based experimental design

• Jasmin-Clara Bürger,
• Sebastian Gutsch and
• Margit Zacharias

Beilstein J. Nanotechnol. 2020, 11, 843–853, doi:10.3762/bjnano.11.69

• bamboo-like morphology, which might influence electronic transport. Future experiments should aim to overcome this limitation, for instance, by further reduction of the oxygen concentration. Simulation setup of the quartz tube (Ø 5 cm). Influence of the total volumetric inflow on the stationary metal

• will fall below the required ideal concentration for the NW growth. A sufficient oxygen concentration can no longer be supplied, and the formation rate of SnO2 decreases. This results in a thinning of the NW diameter. The diameter modulation of the NWs could have consequences in the electronic

• transport within the wires and will be analyzed in future experiments. Conclusion Although SnO2 is highly beneficial for applications in sensors, only few systematic studies on the growth of laterally aligned SnO2 NWs have been published. Combining simulations with focused experiments, we were able to show

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

• Majid Sanaeepur

Beilstein J. Nanotechnol. 2020, 11, 688–694, doi:10.3762/bjnano.11.56

• substitutional defects at the interface of AGNR/ABNNR heterojunctions on the electronic behavior of the proposed RTD is investigated. The effect of substitutional defects on the electronic transport properties of zigzag graphene nanoribbons symmetrically decorated with BN is described in [34]. However, it

• electron transport is in armchair direction, which is not spin-polarized. Therefore, nonequilibrium Green’s functions with tight-binding Hamiltonians (without considering spin degree of freedom) are utilized for electronic transport calculations. Furthermore, in the proposed RTD there are four GNR/BNNR

Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field

• Levente Máthé and
• Ioan Grosu

Beilstein J. Nanotechnol. 2020, 11, 225–239, doi:10.3762/bjnano.11.17

• [21][22], which is also verified by electronic transport measurements [25]. The nonequilibrium Kondo effect in QDs affected by finite magnetic fields has been explored in the noncrossing approximation (NCA) [12] and by slave-boson mean-field theory (SBMFT) for finite [26] and infinite Coulomb

• the Kondo temperature enabling many future applications [76][77]. A plethora of experimental measurements have focused on the electronic transport through graphene QDs [78][79][80][81], bilayer graphene QDs [82][83], graphene QDs in the multilevel regime [84][85][86], graphene double QDs [87][88] and

Coexisting spin and Rabi oscillations at intermediate time regimes in electron transport through a photon cavity

• Vidar Gudmundsson,
• Hallmann Gestsson,
• Nzar Rauf Abdullah,
• Chi-Shung Tang,
• Andrei Manolescu and
• Valeriu Moldoveanu

Beilstein J. Nanotechnol. 2019, 10, 606–616, doi:10.3762/bjnano.10.61

• transport in the far-infrared (FIR) regime. The time-dependent electronic transport through a two-dimensional (2D) nanosystem patterned in a GaAs heterostructure, which is in turn embedded in a three-dimensional (3D) FIR photon cavity, generally displays three regimes: i) The switching transient regime in

Transport signatures of an Andreev molecule in a quantum dot–superconductor–quantum dot setup

• Zoltán Scherübl,
• András Pályi and
• Szabolcs Csonka

Beilstein J. Nanotechnol. 2019, 10, 363–378, doi:10.3762/bjnano.10.36

• electronic transport measurements, utilizing two additional N leads besides the SC lead (see Figure 1a) and low bias voltages. We will demonstrate this using the results shown in the middle column of Figure 2. Transport measurements using a sufficiently large bias voltage allow to determine energy gaps above

• Hamiltonian Heff of Equation 9 describing the QD–SC–QD system. In addition, here we also take into account the N-lead Hamiltonians and the lead-QD tunneling Hamiltonians, that is, HN + HT,N. We describe the electronic transport in this device using a classical master equation, where the tunnel rates between

Intuitive human interface to a scanning tunnelling microscope: observation of parity oscillations for a single atomic chain

• Sumit Tewari,
• Jacob Bakermans,
• Christian Wagner,
• Federica Galli and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2019, 10, 337–348, doi:10.3762/bjnano.10.33

• refer to as point contact pushing (PCP) technique. Keywords: adatom imaging; mechanical annealing; scanning tunnelling microscopy (STM); STM tip; tip apex; Introduction It is of fundamental interest both for chemists and physicists to study the electronic transport through single atoms and molecules

• . Scanning tunnelling microscopy bestows us with the capability not only to image single atoms and molecules when they are deposited on a conducting surface but also to study electronic transport through these entities [1][2]. However, during atomic and molecular manipulation operations it is not possible to

• image the structural changes that happen at the junction using the STM, because the very STM tip used for imaging is also used for manipulation. It is known that the electronic transport of these nanoscale devices depends strongly on their structural conformations and coupling to the leads [3][4

Scanning probe microscopy for energy-related materials

• Rüdiger Berger,
• Benjamin Grévin,
• Philippe Leclère and
• Yi Zhang

Beilstein J. Nanotechnol. 2019, 10, 132–134, doi:10.3762/bjnano.10.12

• , investigated and optimized. Energy-related materials often include electrochemical reactions and (opto-)electronic transport phenomena at their interfaces. In particular, material properties on the nanometer scale play a major role. The understanding of these nanoscale phenomena occurring at material

Electronic conduction during the formation stages of a single-molecule junction

• Atindra Nath Pal,
• Tal Klein,
• Ayelet Vilan and
• Oren Tal

Beilstein J. Nanotechnol. 2018, 9, 1471–1477, doi:10.3762/bjnano.9.138

• , Kolkata 700 106, India 10.3762/bjnano.9.138 Abstract Single-molecule junctions are versatile test beds for electronic transport at the atomic scale. However, not much is known about the early formation steps of such junctions. Here, we study the electronic transport properties of premature junction

• scenarios in which a single-molecule junction is formed. Future control over such processes may pave the way for directed formation of preferred junction structures. Keywords: break junction; electron–vibration interactions; electronic transport; inelastic electron tunneling spectroscopy; molecular

• junction; molecular vibration; quantum interference; shot noise; Introduction Single-molecule junctions serve as a versatile atomic-scale laboratory for quantum electronic transport [1][2]. The formation of such molecular junctions, where a molecule is suspended as a bridge between two metallic electrodes

Artifacts in time-resolved Kelvin probe force microscopy

• Sascha Sadewasser,
• Nicoleta Nicoara and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2018, 9, 1272–1281, doi:10.3762/bjnano.9.119

• electrostatic force microscopy (EFM) on organic photovoltaic blends [14][15][16]. By applying a bias pulse to the atomic force microscopy (AFM) tip, Schirmeisen et al. studied the ion transport in solid electrolytes [17]. By applying bias pulses across organic field-effect transistors (OFETs) electronic

• transport in organic materials was studied [18][19][20][21]. The time resolution in these approaches is limited by the KPFM controller (to typically the millisecond range) or the response time of the cantilever to changes in the sample’s CPD (on the order of 100 μs [14]). A better time resolution was

The electrical conductivity of CNT/graphene composites: a new method for accelerating transmission function calculations

• Olga E. Glukhova and
• Dmitriy S. Shmygin

Beilstein J. Nanotechnol. 2018, 9, 1254–1262, doi:10.3762/bjnano.9.117

• corresponds to the electronic transport along X (along the zigzag edge) in the left figure, and along Y (along the armchair edge) in the right figure. In this case the supercell consists of 580 atoms with a distance between the graphene layers of 2.4 nm. The conductance was calculated using the developed

• length. Using the analogy with graphene nanoribbons, it can be seen that the regularities in the electronic transport along the armchair edge are determined by the width of the ribbon and its morphology. In summary, we can conclude that the pillared graphene films with nanotubes having a diameter of 1.23

• structure; b) schematic representation of the cell of the composite and electrodes in electronic transport along X (left) and along Y (right); c) transmission functions along the X- (left) and Y- (right) directions. Plots of the transmission functions for two-layer (blue) and single-layer (red) composites

Thermoelectric current in topological insulator nanowires with impurities

• Sigurdur I. Erlingsson,
• Jens H. Bardarson and
• Andrei Manolescu

Beilstein J. Nanotechnol. 2018, 9, 1156–1161, doi:10.3762/bjnano.9.107

• electronic transport properties and also reduce the phonon scattering which then leads to increased efficiency [1]. Interestingly, often the materials that show the best thermoelectric properties on the nanoscale can also exhibit topological insulator properties [2], although the connection between the two

Electron interactions with the heteronuclear carbonyl precursor H₂FeRu₃(CO)₁₃ and comparison with HFeCo₃(CO)₁₂: from fundamental gas phase and surface science studies to focused electron beam induced deposition

• Ragesh Kumar T P,
• Paul Weirich,
• Lukas Hrachowina,
• Marc Hanefeld,
• Ragnar Bjornsson,
• Helgi Rafn Hrodmarsson,
• Sven Barth,
• D. Howard Fairbrother,
• Michael Huth and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2018, 9, 555–579, doi:10.3762/bjnano.9.53

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

• Tino Wagner,
• Fabian Menges,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2018, 9, 129–136, doi:10.3762/bjnano.9.15

• contacts limit device performance, as in the presented study, the electronic model gained from KFM scans under different bias conditions sheds light on the electronic transport even at individual contacts. In the absence of a source–drain bias, and by controlling the carrier density in the nanowire through