Beilstein J. Nanotechnol.2013,4, 501–509, doi:10.3762/bjnano.4.59
after excitation.
Keywords: crystalline Si; fs-resolvedmicroscopy; laser ablation; near-field enhancement; ultrafast dynamics; Introduction
The term “near field optics” is used to describe the phenomena associated to non-propagating and highly localized electromagnetic fields and their interaction
surface when being irradiated with a 120 fs long 800 nm wavelength laser pulse. In the study, we have reached locally enhanced fluences up to 35 J/cm2 (≈300 TW/cm2) (for comparison the fluence threshold for surface ablation is ≈0.5 J/cm2 [12]) and used fs-resolvedmicroscopy in order to access time scales
of a dielectric particle upon illumination with a 120 fs laser pulses at 800 nm. For this purpose we have used fs-resolvedmicroscopy to compare the behavior of regions excited inside and outside the near field region generated by a 7.9 μm-diameter SiO2-sphere for different time delays where
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Figure 1:
Schematic view of the spatial intensity distribution at the surface of a crystalline Si substrate i...