Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques

• Annamarija Trausa,
• Sven Oras,
• Sergei Vlassov,
• Mikk Antsov,
• Tauno Tiirats,
• Andreas Kyritsakis,
• Boris Polyakov and
• Edgars Butanovs

Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58

• finely controllable β-Ga2O3 NW synthesis methods and detailed post-examination of their mechanical properties before considering their application in future nanoscale devices. Keywords: atomic force microscopy; elastic modulus; gallium oxide; mechanical properties; nanowire; scanning electron microscopy

• ; Introduction Significant advancements in both material and device technologies related to monoclinic gallium oxide (β-Ga2O3) have been achieved in the current decade [1][2]. Recently, attention has been directed towards it due to its outstanding properties [3] such as ultrawide band gap (4.4–4.9 eV) and

Temperature and chemical effects on the interfacial energy between a Ga–In–Sn eutectic liquid alloy and nanoscopic asperities

• Yujin Han,
• Pierre-Marie Thebault,
• Corentin Audes,
• Xuelin Wang,
• Haiwoong Park,
• Jian-Zhong Jiang and
• Arnaud Caron

Beilstein J. Nanotechnol. 2022, 13, 817–827, doi:10.3762/bjnano.13.72

• liquid metals strongly depend on their surface and interfacial properties. The surface tension of room-temperature-liquid Ga-based alloys has been reported to be lowered by a thin surface oxide layer [8]. In [9], the authors electrochemically controlled the growth and removal of gallium oxide to tune the