Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

• Yasameen Al-Mafrachi,
• Sandeep Yadav,
• Sascha Preu,
• Jörg J. Schneider and
• Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

• integration techniques make it important for real-time broadband imaging systems. Keywords: 3D micro-nano architecture; blackbody absorption; CNT microbolometer; high responsivity; high spatial resolution; Introduction Non-cryogenic infrared (IR) microbolometers represent a cutting-edge technology with

A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

• Doan Nhat Giang,
• Nhat Minh Nguyen,
• Duc Anh Ngo,
• Thanh Trang Tran,
• Le Thai Duy,
• Cong Khanh Tran,
• Thi Thanh Van Tran,
• Phan Phuong Ha La and
• Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

• , have gained much attention from many research teams. This study describes a low-cost photodetector based on CuO nanoparticles and ZnO nanorods operating in a wide range of light wavelengths (395, 464, 532, and 640 nm). Particularly, under 395 nm excitation, the heterostructure device exhibits high

• responsivity, photoconductive gain, detectivity, and sensitivity with maximum values of 1.38 A·W−1, 4.33, 2.58 × 1011 Jones, and 1934.5% at a bias of 2 V, respectively. The sensing mechanism of the p–n heterojunction of CuO/ZnO is also explored. Overall, this study indicates that the heterostructure of CuO

Frontiers of nanoelectronics: intrinsic Josephson effect and prospects of superconducting spintronics

• Anatolie S. Sidorenko,
• Horst Hahn and
• Vladimir Krasnov

Beilstein J. Nanotechnol. 2023, 14, 79–82, doi:10.3762/bjnano.14.9

• a very high responsivity at 77 K (up to 9 kV/W), low noise equivalent power (NEP) of 3 × 10−13 W/Hz(1/2), and with a wide power dynamic range equal to 1 × 106 [18]. Integrating an aluminum Josephson junction, with a size of a few micrometers, operating as a single photon counter in the microwave

A self-powered, flexible ultra-thin Si/ZnO nanowire photodetector as full-spectrum optical sensor and pyroelectric nanogenerator

• Liang Chen,
• Jianqi Dong,
• Miao He and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1623–1630, doi:10.3762/bjnano.11.145

• systematically analyzed. The self-powered PDs exhibit high responsivity (1200 mA/W), high detectivity (1013 Jones) and fast response (τr = 18 μs, τf = 25 μs) under UV illumination. High and stable short-circuit output currents at each wavelength from ultraviolet (UV) to near-infrared (NIR) demonstrates that the

• -infrared (NIR) (1064 nm) under zero bias with fast response speed at each wavelength. The self-power PDs exhibit high responsivity (1200 mA/W), high detectivity (1013 Jones) and fast response speed (τr = 18 μs, τf = 25 μs) under UV illumination. The pyroelectric output current can drive a LED by harvesting

• -circuit current and the performance of PDs are notably improved. The self-powered PDs exhibit high responsivity (1200 mA/W), high detectivity (1013 Jones) and fast response speed (τr = 18 µs, τf = 25 µs) under UV illumination. High and stable short-circuit output currents at each wavelength illumination

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• initial responsivity after storage under ambient conditions for three weeks without any encapsulation. On the basis of these results, the proposed technique is promising and encouraging for the fabrication of inexpensive high-responsivity photodetectors. Schematic diagram of PLAL system used for

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

• Ionel Stavarache,
• Valentin Adrian Maraloiu,
• Petronela Prepelita and
• Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

• performance, high photoresponse gain, high responsivity (about 7 AW−1), fast response time (0.5 µs at 4 kHz) and great optoelectronic conversion efficiency of 900% in a wide operation bandwidth, from 450 to 1300 nm. The obtained photoresponse gain and the spectral width are attributed mainly to the high Ge

• temperature, show superior performance, such as high responsivity, fast response time and great optoelectronic conversion efficiency over a wide operation bandwidth. Our deposition approach emphasizes the great potential of Ge-nps embedded in SiO2 thin films for hybrid integration, as they may be employed in