Heterogeneous reactions in a HFCVD reactor: simulation using a 2D model

• Xochitl Aleyda Morán Martínez,
• José Alberto Luna López,
• Zaira Jocelyn Hernández Simón,
• Gabriel Omar Mendoza Conde,
• José Álvaro David Hernández de Luz and
• Godofredo García Salgado

Beilstein J. Nanotechnol. 2024, 15, 1627–1638, doi:10.3762/bjnano.15.128

• 14 sur, Edif. IC5 y IC6. Puebla, Pue., 72507 México 10.3762/bjnano.15.128 Abstract In this study, a simulation of the elementary chemical reactions during SiOx film growth in a hot filament chemical vapor deposition (HFCVD) reactor was carried out using a 2D model. For the 2D simulation, the

• ; chemical reactions; flow dynamics; HFCVD; hot filament chemical vapor deposition; SiOx films; Introduction The growth of materials such as non-stoichiometric silicon oxide (SiOx) is an important step in semiconductor devices development. Control of deposition parameters determines the success of the

• by different CVD techniques, but also by sputtering and ion implantation, among others [4][5]. The key parameters are particular for each of these techniques. Hot filament chemical vapor deposition (HFCVD) is an excellent alternative for obtaining SRO films. It is also very versatile and economical

Functionalization of vertically aligned carbon nanotubes

• Eloise Van Hooijdonk,
• Carla Bittencourt,
• Rony Snyders and
• Jean-François Colomer

Beilstein J. Nanotechnol. 2013, 4, 129–152, doi:10.3762/bjnano.4.14

• if the pores were vertical. Later, in 1998, the synthesis of very straight, aligned multiwalled CNTs on nickel-coated glass at temperatures as low as 666 °C was obtained by Ren et al. [24] using plasma-enhanced hot-filament chemical vapor deposition (PE-HF-CVD). Reported in 1999 by Fan et al. [25], a