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Search for "ion beam diameter" in Full Text gives 3 result(s) in Beilstein Journal of Nanotechnology.

Focused ion beam-induced platinum deposition with a low-temperature cesium ion source

  • Thomas Henning Loeber,
  • Bert Laegel,
  • Meltem Sezen,
  • Feray Bakan Misirlioglu,
  • Edgar J. D. Vredenbregt and
  • Yang Li

Beilstein J. Nanotechnol. 2025, 16, 910–920, doi:10.3762/bjnano.16.69

Graphical Abstract
  • and 440 pA, corresponding to current densities between 0.4 and 8 pA·μm−2, were utilized. The deposition time was between 3:05 and 16:11 min, and the total ion dose ranged between 717 and 1921 pC·μm−2. Using acceleration voltages of 2, 5, 8, and 16 kV, the ion beam diameter changed from 25 to 460 nm
  • beam diameter changed with voltage and current from 32 to 445 nm. With the Ga+ FIB, patterns were deposited at ion beam currents ranging from 17 to 396 pA with current densities between 0.7 and 19.8 pA·μm−2. With a deposition time of 2:30 min, the ion dose is between 105 and 2970 pC·μm−2. The diameter
  • , ion currents from 16 to 285 pA were used, so the current densities were between 0.9 and 14.2 pA·μm−2. The overall deposition time was kept constant at 2:30 min, and the ion dose was changed from 128 to 2138 pC·μm−2. The ions were accelerated with voltages of 2, 5, 8, and 16 kV, while the measured ion
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Published 16 Jun 2025

Charged particle single nanometre manufacturing

  • Philip D. Prewett,
  • Cornelis W. Hagen,
  • Claudia Lenk,
  • Steve Lenk,
  • Marcus Kaestner,
  • Tzvetan Ivanov,
  • Ahmad Ahmad,
  • Ivo W. Rangelow,
  • Xiaoqing Shi,
  • Stuart A. Boden,
  • Alex P. G. Robinson,
  • Dongxu Yang,
  • Sangeetha Hari,
  • Marijke Scotuzzi and
  • Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

Graphical Abstract
  • minimal He+ ion damage effects compared with the earlier Ga+ systems, and reduced proximity effect, are the reasons for the renewed interest in ion beam lithography in the form of scanning helium ion beam lithography or “SHIBL”. The ultimate resolution is determined by a combination of ion beam diameter
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Published 14 Nov 2018

Ion beam profiling from the interaction with a freestanding 2D layer

  • Ivan Shorubalko,
  • Kyoungjun Choi,
  • Michael Stiefel and
  • Hyung Gyu Park

Beilstein J. Nanotechnol. 2017, 8, 682–687, doi:10.3762/bjnano.8.73

Graphical Abstract
  • source. Our method of profiling ion beams with 2D-layer perforation provides more information on ion beam profiles than the conventional sharp-edge scan method does. Keywords: exposure dose; focused ion beam; freestanding 2D layer; graphene; ion beam diameter; ion beam point spread function
  • interaction with 2D materials contains information about beam profiles [14][17][18]. Here we show that it is possible to fabricate pores in graphene membranes smaller than the ion beam diameter by carefully tailoring the exposure dose. The pore diameters directly depend on the time for which individual pixels
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Published 23 Mar 2017
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