Effects of focused electron beam irradiation parameters on direct nanostructure formation on Ag surfaces

• Jānis Sniķeris,
• Vjačeslavs Gerbreders,
• Andrejs Bulanovs and
• Ēriks Sļedevskis

Beilstein J. Nanotechnol. 2022, 13, 1004–1010, doi:10.3762/bjnano.13.87

• surface layer of twinned B19’ martensite being pulled up along the growth of the nanodot. After heating the Ni40Ti60 surface to 100 °C, where the shape memory effect is expected to be activated due to the phase transition from B19’ martensite to B2 austenite, the surface surrounding the nanodot was found

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• investigations allowed us to conclude about the possible mechanism for the observed resistive switching mechanism. Keywords: gradient thin film; magnetron sputtering; memory effect; resistive switching; Introduction In recent years, significant development has been observed in design, simulation, manufacturing

• . So far, a memristive-like memory effect has been observed for thin film structures with a so-called V-type [41] or linear [42] gradient profile of the Cu distribution in (Ti–Cu)Ox thin films. In the present paper, the results for (Ti–Cu) oxide semiconducting thin films prepared with a U-shape

• , structure, and elemental analyses, four different boundaries can be recognized in the prepared thin film structure: Au/(Ti–Cu)Ox, (Ti–Cu)Ox/TiO2, TiO2/(Ti–Cu)Ox, and (Ti–Cu)Ox/Ti6Al4V. To further analyze the switching mechanism of the observed memory effect, the energy diagram in Figure 9 was proposed. The

Controlling the proximity effect in a Co/Nb multilayer: the properties of electronic transport

• Sergey Bakurskiy,
• Mikhail Kupriyanov,
• Nikolay V. Klenov,
• Igor Soloviev,
• Andrey Schegolev,
• Roman Morari,
• Yury Khaydukov and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1336–1345, doi:10.3762/bjnano.11.118

• these approaches is the complexity of the practical implementation of an effective synaptic connection: they should be tunable but, at the same time, retain a memory effect. In order to create a synapse, a Josephson contact with a ferromagnetic component in the weak coupling region was recently proposed

The impact of crystal size and temperature on the adsorption-induced flexibility of the Zr-based metal–organic framework DUT-98

• Simon Krause,
• Volodymyr Bon,
• Hongchu Du,
• Rafal E. Dunin-Borkowski,
• Ulrich Stoeck,
• Irena Senkovska and
• Stefan Kaskel

Beilstein J. Nanotechnol. 2019, 10, 1737–1744, doi:10.3762/bjnano.10.169

• flexibility upon downsizing of DUT-8(Ni) crystals [17][18]. In a similar fashion, the suppression of gate opening in ZIF-8 upon crystal downsizing was previously reported [10][11][12][13] and Kitagawa and co-workers reported on a shape–memory effect of the gate-opening transition upon crystal downsizing in a

Co-doped MnFe₂O₄ nanoparticles: magnetic anisotropy and interparticle interactions

• Bagher Aslibeiki,
• Parviz Kameli,
• Hadi Salamati,
• Giorgio Concas,
• Maria Salvador Fernandez,
• Alessandro Talone,
• Giuseppe Muscas and
• Davide Peddis

Beilstein J. Nanotechnol. 2019, 10, 856–865, doi:10.3762/bjnano.10.86

• . A dipolar-based interaction regime is detected for all samples; in addition, the intensity of the interactions shows a possible relation with the single particle anisotropy. Finally, the sample with the strongest interaction regime shows a superspin glass state confirmed by memory effect dynamics

Effect of ferroelectric BaTiO₃ particles on the threshold voltage of a smectic A liquid crystal

• Abbas R. Imamaliyev,
• Mahammadali A. Ramazanov and
• Shirkhan A. Humbatov

Beilstein J. Nanotechnol. 2018, 9, 824–828, doi:10.3762/bjnano.9.76

• ferroelectric BaTiO3 nanoparticles were found to exhibit a nonvolatile electromechanical memory effect in the isotropic phase [9]. Ferroelectric nanoparticles reduce the threshold voltage by enhancing the dielectric anisotropy of the nematic LC and the system becomes sensitive to the sign of the applied

Beyond Moore’s technologies: operation principles of a superconductor alternative

• Igor I. Soloviev,
• Nikolay V. Klenov,
• Sergey V. Bakurskiy,
• Mikhail Yu. Kupriyanov,
• Alexander L. Gudkov and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2017, 8, 2689–2710, doi:10.3762/bjnano.8.269

Copper atomic-scale transistors

• Fangqing Xie,
• Maryna N. Kavalenka,
• Moritz Röger,
• Daniel Albrecht,
• Hendrik Hölscher,
• Jürgen Leuthold and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2017, 8, 530–538, doi:10.3762/bjnano.8.57

• devices can potentially be applied as logic operation devices that can fully utilize semiconductor circuit technology. Switching mechanisms such as valence-change memory effect, thermochemical memory effect, and electrochemical metallization effect have been previously exploited for three-terminal devices

Hybrid spin-crossover nanostructures

• Carlos M. Quintero,
• Gautier Félix,
• Iurii Suleimanov,
• José Sánchez Costa,
• Gábor Molnár,
• Lionel Salmon,
• William Nicolazzi and
• Azzedine Bousseksou

Beilstein J. Nanotechnol. 2014, 5, 2230–2239, doi:10.3762/bjnano.5.232

• polymer [Fe(Htrz)2(trz)](BF4) (Htrz = 1,2,4-triazole and trz = 1,2,4-triazolato), known to show a memory effect above room temperature [22], and SiO2 shell grown around it. The use of silica is of great interest because of its high porosity and the possibility of grafting other functionalities onto its

UHV deposition and characterization of a mononuclear iron(III) β-diketonate complex on Au(111)

• Irene Cimatti,
• Silviya Ninova,
• Valeria Lanzilotto,
• Luigi Malavolti,
• Luca Rigamonti,
• Brunetto Cortigiani,
• Matteo Mannini,
• Elena Magnano,
• Federica Bondino,
• Federico Totti,
• Andrea Cornia and
• Roberta Sessoli

Beilstein J. Nanotechnol. 2014, 5, 2139–2148, doi:10.3762/bjnano.5.223

• ) [1][2][3][4][5][6]. SMMs are molecules whose magnetic moment reorients orders of magnitude slower than in normal paramagnets and results in a memory effect at low temperature. Such a behaviour is often accompanied by spectacular quantum features, for example, resonant quantum tunnelling of the

• films of [Fe4(Ph-C(CH2O)3)2(dpm)6] (Fe4Ph) [12], a tetrairon(III) star-shaped SMM that can be sublimated in vacuum conditions. This class of molecules provided the first evidence that SMMs can retain their memory effect once grafted onto a metallic substrate. The magnetic properties of individual Fe4

Current state of laser synthesis of metal and alloy nanoparticles as ligand-free reference materials for nano-toxicological assays

• Christoph Rehbock,
• Jurij Jakobi,
• Lisa Gamrad,
• Selina van der Meer,
• Daniela Tiedemann,
• Ulrike Taylor,
• Wilfried Kues,
• Detlef Rath and
• Stephan Barcikowski

Beilstein J. Nanotechnol. 2014, 5, 1523–1541, doi:10.3762/bjnano.5.165

• properties such as superelasticity and shape memory effect, which was reported to occur even on a nanoscopic scale [115]. These characteristics make NiTi alloys particularly suitable, e.g., as stent material [116][117][118] and scaffolds in bone tissue engineering [119]. Synthesis of NiTi nanoparticles by

Reversible mechano-electrochemical writing of metallic nanostructures with the tip of an atomic force microscope

• Christian Obermair,
• Marina Kress,
• Andreas Wagner and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2012, 3, 824–830, doi:10.3762/bjnano.3.92

• location where the previous structures were deleted, shows that there is no observable memory effect, i.e., no effect of the previous writing process on the subsequent writing process. Thus, the four processes required for reversible information storage, “write”, “read”, “delete” and “re-write”, were

• mechano-electrochemical pen. After dissolution of a certain structure by reversing the electrochemical potential, new, different structures were written at the same position with no observable memory effect of the previous writing process. This demonstrates that the tip-induced modification is limited to

The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

• César Moreno,
• Carmen Munuera,
• Xavier Obradors and
• Carmen Ocal

Beilstein J. Nanotechnol. 2012, 3, 722–730, doi:10.3762/bjnano.3.82

• dotted line in Figure 5a, at the employed Vrd = −2 V the current approaches zero for all modifications performed with Vwr > +1 V. The maximum current measured (±100 nA) corresponds to the saturation of the current amplifier in the experimental setup used. To analyse the memory effect of the fabricated

• by means of Kelvin probe force microscopy [3], the results presented here support the memristor memory effect capable of memorizing the amount of charge that has passed through it. In order to gain insight to this issue, analysis of the I–V characteristics is needed. As commented above, vertical

• alternative to other investigations made on memristor devices with two planar electrodes in which the active regions are buried under the metal contact, here we have been able to analyse the memory effect of nanoscale resistive switching with the very same probe that was used for the fabrication, providing

The atomic force microscope as a mechano–electrochemical pen

• Christian Obermair,
• Andreas Wagner and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2011, 2, 659–664, doi:10.3762/bjnano.2.70

• experimental results for several reasons: No damage was found on the gold surfaces after tip-induced deposition and subsequent dissolution of the deposited copper. No memory effect is observed, when a further deposition experiment is performed on the same area of the gold surface after such a dissolution of

Twofold role of calcined hydrotalcites in the degradation of methyl parathion pesticide

• Alvaro Sampieri,
• Geolar Fetter,
• María Elena Villafuerte-Castrejon,
• Adriana Tejeda-Cruz and
• Pedro Bosch

Beilstein J. Nanotechnol. 2011, 2, 99–103, doi:10.3762/bjnano.2.11

• hydrotalcite. This process is known as “memory effect”. For example, for the retention of iodide a carbonated hydrotalcite must be thermally treated to eliminate CO32− to obtain the metallic oxides which are the precursors for the reconstruction of HTs with iodide as interlayered anion [21]. HTs can also trap

• the ability to regenerate the layered structures of HTs by the “memory effect” in the presence of anions released during MP degradation. Degradation of MP: Figure 1 shows the UV–vis absorption spectra of the solution after stirring MP with the Mg–Al, Zn–Al and Ni–Al mixed oxides (see Supporting

• second part of the MP reaction (acid fraction) involves partial decomposition into PO43−, SO42−, NO3− and CO32− ions which enable HT reconstruction through a memory effect mechanism (Figure 4). However, if the resulting species are larger (i.e., dimethyl thiophosphate), they should be sorbed on the edges