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Search for "optical conductivity" in Full Text gives 7 result(s) in Beilstein Journal of Nanotechnology.
Quantum-to-classical modeling of monolayer Ge2Se2 and its application in photovoltaic devices
Beilstein J. Nanotechnol. 2024, 15, 1153–1169, doi:10.3762/bjnano.15.94
- (evaluated at the energy En(k)). The response coefficients, that is, the relative dielectric permittivity (εr), the polarizability (α), and the optical conductivity (σ), are related to the susceptibility as: with i,j ∈ {1,2,3}. Solving and separating Equation 9 for the imaginary part of dielectric function
Reliable fabrication of transparent conducting films by cascade centrifugation and Langmuir–Blodgett deposition of electrochemically exfoliated graphene
Beilstein J. Nanotechnol. 2022, 13, 666–674, doi:10.3762/bjnano.13.58
- sheet resistance RS obey the following equation: where Z0 is the impedance of free space, σop is the optical conductivity, and σdc,B is the bulk dc conductivity of the film. For film thicknesses below the percolation threshold, the transmittance and sheet resistance obey the following equation: where Π
First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications
Beilstein J. Nanotechnol. 2021, 12, 1101–1114, doi:10.3762/bjnano.12.82
- [79]. No dispersion or scattering is observed in L(ω) as the curve is linear between 0 and 1.4 eV. The real optical conductivity σ(ω) is a valuable tool to evaluate the concentration of electrons that participate in optical transitions. The optical conductivity plot for the π-SnSe alloy is presented
- in Figure 12d as a function of photon energy. It can be seen from Figure 12d that there is no real optical conductivity σ(ω) found in the optical bandgap of this compound, which proves the nonexistence of electrons in unoccupied bands. After the photon energy value of 1.4 eV, there is an abrupt
- increase trend of the optical conductivity which directs the electronic transitions from valence to conduction bands. Only one peak is observed at the 4.2 eV and σ(ω) starts to linearly decrease at the entire higher energy regime. Conclusion A detailed study has been performed on the structural
Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering
Beilstein J. Nanotechnol. 2019, 10, 1511–1522, doi:10.3762/bjnano.10.149
- of the thin films. This leads to a reduction of the intervals between them and, consequently, of the bandgap. The width of the bandgap corresponding to direct transitions increases with application of the annealing treatment for the studied ITO samples. The optical conductivity coefficient dependence
- (dispersion) and b) extinction coefficient dependence on the wavelength for the as-deposited and RTA-treated ITO samples. Dependence of (αhν)2 = f(hν) on the energy of the incident photons, for the as-deposited and RTA-treated ITO samples. Optical conductivity dependence on the energy of the incident photons
New 2D graphene hybrid composites as an effective base element of optical nanodevices
Beilstein J. Nanotechnol. 2018, 9, 1321–1327, doi:10.3762/bjnano.9.125
- the hybrid nanocomposite were approximately equal for both metallic and semiconductor nanotubes. Keywords: absorption coefficient; 2D CNT–graphene hybrid nanocomposite; optical conductivity; optical nanodevices; topological models; Findings The applicability of graphene hybrid nanocomposites in the
- to find the absorption coefficient by the following formula To calculate the elements of the complex optical conductivity tensor, the Kubo–Greenwood formula [16] that determines the conductivity as a function of photon energy Ω was used. It can be written as [17]: where fβ(x) = 1/{1 + exp[β(x − μ
- are a wide spectral range and low loss. Topological model of 2D CNT-graphene hybrid nanocomposite. A fragment of the 2D CNT–graphene hybrid nanocomposite and configuration of an incident electromagnetic wave. The optical conductivity of 2D CNT–graphene hybrid nanocomposites with an intertube distance
The effect of dry shear aligning of nanotube thin films on the photovoltaic performance of carbon nanotube–silicon solar cells
Beilstein J. Nanotechnol. 2016, 7, 1486–1491, doi:10.3762/bjnano.7.141
- resistance, Rsheet, of the films was marginally increased after DSA, which is made clearer when considering the DC electrical to optical conductivity ratio, σOP/σDC (Figure 2d), calculated as per Equation 2 [45], which takes into account the sheet resistance and the (isotropic) transmittance and where μ0 and
- counterparts. The reasons for the poorer performance are not immediately obvious. Although there is a clear difference in the sheet resistance, and thus DC electrical to optical conductivity ratio, it does not appear to be large enough to account for the observed difference in performance. Indeed, the two
- nanotube–silicon junctions, in this case this was accompanied instead by a reduction in the sheet resistance and thus DC electrical to optical conductivity ratio of the films. In terms of the performance of solar cells made with the DSA films, the net result for thin films (T550 > 70%) was that there was
Nitrogen-doped graphene films from chemical vapor deposition of pyridine: influence of process parameters on the electrical and optical properties
Beilstein J. Nanotechnol. 2015, 6, 2028–2038, doi:10.3762/bjnano.6.206
- graphene grown from ethanol-CVD. Keywords: carbon; electrical conductivity; nitrogen doping; optical conductivity; transparent conductor; Introduction Transparent conductive electrodes (TCEs) are an indispensable component of many kinds of electronic devices, such as displays, touch-screens, light
- temperature, while it is not influenced by the hydrogen flow. The films grown at 930 °C have all an average transmittance of 94% at 550 nm, those grown at 1000 °C have 90%, while the 1070 °C samples have 83%. The optical conductivity was calculated as T = (1 + Z0/2 σOp·t)−2, where Z0 is the impedance of free
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