Ar⁺ implantation-induced tailoring of RF-sputtered ZnO films: structural, morphological, and optical properties

• Manu Bura,
• Divya Gupta,
• Arun Kumar and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 872–886, doi:10.3762/bjnano.16.66

• occurs because of the fast decay of phonons or an anharmonic process due to damage [25]. One can determine the phonon lifetime from the Raman spectra using the energy–time uncertainty equation [25]: Here represents Raman shift, which is of the order of the FWHM (Γ) of the Raman mode; thus, the lifetime

• fluences. Variation in the position of peak and FWHM corresponding to the A1 (LO) mode, phonon lifetime, and number of displacements produced per atom (dpa) as a function of ion fluence. Variations of particle size and surface RMS roughness values of pristine and Ar+-implanted ZnO films as functions of ion

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• depends on graphene carrier concentration is the FWHM of the G band [15]. The phonon lifetime is short in the case of a low value of the Fermi energy. Thus, the band width following the uncertainty principle consequently becomes larger. Increasing the Fermi energy values leads to an increase of the phonon

• lifetime and consequently to a decrease of the band width. In general, FWHM of the G band is positively correlated with the value of graphene strain. However, in the case of graphene with strain smaller than 0.2%, which is the case in our samples, such changes of FWHM are negligible [45]. The histograms of

Light–matter interactions in two-dimensional layered WSe₂ for gauging evolution of phonon dynamics

• Avra S. Bandyopadhyay,
• Chandan Biswas and
• Anupama B. Kaul

Beilstein J. Nanotechnol. 2020, 11, 782–797, doi:10.3762/bjnano.11.63

• . From this analysis, phonon lifetime in the Raman active modes and phonon concentration, as correlated to the energy parameter E0, were calculated as a function of the laser power, P, and substrate temperature, T. For monolayer WSe2, from the power dependence it was determined that the phonon lifetime

• for the in-plane vibrational mode was twice that of the out-of-plane vibrational mode for P in the range from 0.308 mW up to 3.35 mW. On the other hand, the corresponding relationship for the temperature analysis showed that the phonon lifetime for the in-plane vibrational mode lies within 1.42× to

• with increasing T and P; consequently, the phonon lifetime was found to decrease. Although phonon lifetime decreased with increasing temperature for all thicknesses, the decay rate in the phonon lifetime in the monolayer (1L) material was found to be 2× lower compared to the bulk. We invoke a harmonic