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Search for "photoresist" in Full Text gives 63 result(s) in Beilstein Journal of Nanotechnology.
Investigation of Hf/Ti bilayers for the development of transition-edge sensor microcalorimeters
Beilstein J. Nanotechnol. 2024, 15, 1353–1361, doi:10.3762/bjnano.15.108
- , photolithography was performed on a Karl Suss MJB3 lithography aligner before deposition. We used AZ5214E photoresist, which was subsequently developed with MIF726. We then deposited 85 nm of hafnium and 5 nm of titanium onto the substrates through developed areas in the resist, using an electron beam evaporator
Elastic modulus of β-Ga2O3 nanowires measured by resonance and three-point bending techniques
Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58
- photoresist on the wafer using conventional optical lithography. Next, the SiO2 was selectively removed using a buffered HF solution to replicate the resist pattern in the oxide layer. Then, the silicon was etched at 90 °C in a tetramethylammonium hydroxide (TMAH) solution to create etch pits. Finally, the
Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate
Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39
- silicon substrates with square holes were prepared from (100) silicon wafers (Semiconductor Wafer, Inc.) with 50 nm thermal oxide in four steps as follows: 1) conventional optical lithography process to produce the desired pattern in a photoresist on the wafer; 2) selective removal of SiO2 using buffered
Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications
Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23
- niobium and titanium targets [33] in an ATC2200 from AJA International Inc., with a deposition rate of roughly 3 nm/min. (b) Pads and markers. A lift-off process defines the gold contact pads and alignment marks. We spin a 400 nm thick photoresist (maN1407), bake on a hotplate at 100 °C for 60 s and
- patterned wafer is ultrasonically cleaned and rinsed with IPA. (c) Back-side mask. Before fabricating the chromium etch mask on the back side, we first protect the wafer’s front side with a thin PMMA layer. We then define the lift-off mask on the wafer back side by spinning a 400 nm thick photoresist
- . Photolithography defines the chip and cantilever. We spin a 1.7 μm thick photoresist maP1225, bake at 105 °C for 2 min. We then expose with a dose of 300 mJ/cm2 in the MLA150, and develop in maD331 for 45 s. We etch through the Si-N layer using a CHF3/SF6 process with an etch rate of roughly 100 nm/min in the
Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators
Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3
- contact pads, DC lines, and antennas is made. The second electronic lithography step is used for the exposition of the bolometric layer. During photolithography, the first exposure was carried out with two photoresists. This is because the DC linewidth was 3 µm, and the use of a single photoresist would
TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes
Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1
- resist is spin-coated on top. The resist used is AZ® nLof 2020 diluted with AZ® EBR solvent. The producers describe this as a photoresist (UV), but it is also compatible with electron beams. It is spun on top of Py at 4000 rpm and baked at 110 °C for 1 min. The resulting thickness is around 448 nm for 1
Hierarchically patterned polyurethane microgrooves featuring nanopillars or nanoholes for neurite elongation and alignment
Beilstein J. Nanotechnol. 2023, 14, 1157–1168, doi:10.3762/bjnano.14.96
- approaches are quite limited. In this work, we show that nanopillars and nanoholes, and their combination with microgrooves, can be patterned on polyurethane (PU) films using a low-cost, reusable photoresist master mold prepared via nanosphere lens lithography and UV-LED photolithography, with specific
- “reinforcement” methods for overcoming the inherent drawbacks of using photoresist masters. We show that the PU nanopillars and nanoholes increase the neurite length of pheochromocytoma 12 (PC12) cells through unique growth cone interactions. Moreover, we demonstrate, for the first time, that hierarchically
- ) system to create arrays of nanodots and nanopillars combined with microgrooves on the epoxy-based SU-8 negative photoresist [15][16]. While we found an improvement in PC12 neurite alignment on the ridge areas of nanopillared microgrooves, the overall alignment was not significantly different from that of
Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination
Beilstein J. Nanotechnol. 2023, 14, 1059–1067, doi:10.3762/bjnano.14.87
- (PBZT) and a 150 nm LNO as the top electrode were deposited. The wafer was patterned by a standard photolithographic process, starting with the application and patterning of the photoresist mask for defining the device areas. Subsequently, the excess PBZT and LNO were removed by a wet etching process
- finalized by etching circular holes from the backside of the wafer to obtain thin membranes. The sizes of these holes were defined by applying and patterning a photoresist on the backside of the wafer, which was then anisotropically etched by deep reactive ion etching (DRIE) using SF6, O2, and C4F8 gases
Silver-based SERS substrates fabricated using a 3D printed microfluidic device
Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65
- a substrate [23]. This procedure typically requires a clean room and expensive facilities such as a photolithography machine, a spin-coater, and photoresist agents, as well as long processing times and well-trained technical staff. Additionally, the photolithography process is limited to planar
Gap-directed chemical lift-off lithographic nanoarchitectonics for arbitrary sub-micrometer patterning
Beilstein J. Nanotechnol. 2023, 14, 34–44, doi:10.3762/bjnano.14.4
- important parameters to modulate (Scheme 1B). H is regulated by the photoresist mold in which the PDMS resin is cured in, which in turn can be controlled by spin coating speed and photoresist concentration. On the other hand, D and W are both determined by the photomask used. It is important to note that
- purchased from Echo Chemical (Taipei, Taiwan). Hexamethyldisilazane (HMDS) was purchased from Sigma-Aldrich (St Louis, MO, USA). Iron nitrate and thiourea were purchased from Showa Chemical Industry Co., Ltd. (Tokyo, Japan). Positive photoresist AZ6112 was purchased from AZ Electronic Materials Taiwan Co
Analytical and numerical design of a hybrid Fabry–Perot plano-concave microcavity for hexagonal boron nitride
Beilstein J. Nanotechnol. 2022, 13, 1030–1037, doi:10.3762/bjnano.13.90
- (Figure 2b,c) to prevent the accumulation of the photopolymer resist, inside the solidified concave polymer, when the sample is developed (SU-8 developer) and cleaned (IPA) to remove any remaining photoresist and developer, respectively, after the 2PP process is finished. Analytical design Geometrical
Fabrication and testing of polymer microneedles for transdermal drug delivery
Beilstein J. Nanotechnol. 2022, 13, 629–640, doi:10.3762/bjnano.13.55
- photoresist was drop cast onto an indium tin oxide (ITO) glass substrate prior to starting the printing process. A dip-in laser lithography (DiLL) objective (25× magnification, NA = 0.8) was used for printing, after which the MN array was washed in propylene glycol methyl ether acetate (PGMEA) for 10 minutes
Design aspects of Bi2Sr2CaCu2O8+δ THz sources: optimization of thermal and radiative properties
Beilstein J. Nanotechnol. 2021, 12, 1392–1403, doi:10.3762/bjnano.12.103
- glue. The crystal is cleaved under ambient conditions. After that the sample is immediately put into a deposition chamber and a protective gold layer of 60–80 nm is deposited to avoid surface passivation. Next, a line pattern of photoresist is written with a length of 100–200 μm and a width of 5–15 μm
- on a flat portion of Bi-2212 surface, followed by argon-ion etching of the unprotected parts of Au and Bi-2212, the deposition of insulating SiO2 or CaF2 layers and a lift-off of the photoresist at the line. The depth of Bi-2212 etching at this stage (dm ≈ 200–400 nm) defines the height of mesas and
An overview of microneedle applications, materials, and fabrication methods
Beilstein J. Nanotechnol. 2021, 12, 1034–1046, doi:10.3762/bjnano.12.77
- materials such as polymethylmethacrylate (PMMA) or SU-8 epoxy resin chemically amplified resist. The former is a positive-tone photoresist in which chemical bonds undergo scission upon exposure to the UV light, rendering the exposed regions of the pattern more soluble in the developer. For negative resists
- dissolving versions for drug delivery [27][37][99]. Figure 4a is a schematic of the manufacturing procedure for γ-PGA microneedles and Figure 4b shows the manufactured array [99]. In another study, photolithography was first used to create master structures from SU-8 photoresist by UV photolithography
- etching using an inductively coupled plasma (ICP) etcher, then the polymer microneedles were replicated using a PDMS negative soft mould and hot embossing [100]. SU-8 photoresist has been used, not just for master moulds, but also as the final material for microneedles. Long hollow microneedles, ≈1500 μm
Recent progress in actuation technologies of micro/nanorobots
Beilstein J. Nanotechnol. 2021, 12, 756–765, doi:10.3762/bjnano.12.59
- nanoparticles and photoresist are uniformly mixed and a U-shaped pattern is processed by photolithography. The robot could capture and automatically transport microbeads injected with chemicals to specific locations in neurons under the control of a gradient magnetic field, which has potential applications in
Intracranial recording in patients with aphasia using nanomaterial-based flexible electronics: promises and challenges
Beilstein J. Nanotechnol. 2021, 12, 330–342, doi:10.3762/bjnano.12.27
- (iWEBS) was fabricated to map cortical connectivity in a wide region, as presented in Figure 5a. The microelectrode array was made of patterned Au wires passivated with SU-8 photoresist on a flexible polyimide (PI) substrate (Figure 5b). The thickness of iWEBSis was only 14.5 µm with 2 µm SU-8 and 12.5
Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor
Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166
- specific top-down two-step preparation process of freestanding AlGaN/AlN/GaN heterojunction NWs, including isotropic ICP dry etching and selective EC wet etching [25][26], is shown in Figure 2. First, a layer of photoresist was spin coated on the surface of the wafer from MOCVD, and advanced stepper
- , the striped photoresist mask, which covers the surface, was removed with acetone to obtain the structure shown in Figure 2a. The settings for the stripe width (900 nm) and the interval between the stripes (3 μm) were controlled during stepper lithography. After ICP dry etching, the sample was placed
Electrokinetic characterization of synthetic protein nanoparticles
Beilstein J. Nanotechnol. 2020, 11, 1556–1567, doi:10.3762/bjnano.11.138
- posts (Figure 2b and Figure S1, Supporting Information File 1) were made from PDMS employing standard soft lithography techniques. To create a device, PDMS (Dow Corning, Midland, MI) was cast onto a negative replica mold made with a silicon wafer (Silicon Inc., Boise, ID) and an SU-8 3050 photoresist
An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization
Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111
- topography of the photoresist PMMA. Many more examples can be envisioned. The He ion beam is known to change the mechanical [37], electrical [38], and magnetic properties of materials [39]. AFM can be used to measure mechanical properties using contact resonance [40][41] or off-resonance tapping techniques
Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires
Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81
- photodetector for the IR region of the spectrum was tested, as described in the Experimental section. A special design of contacts was applied via laser beam lithography on selected nanowires. As illustrated in Figure 7A, defined regions (bright regions) were opened in the photoresist (dark regions) for further
- bulk (curve 1) and anodized (curve 2) GaAs samples measured at a temperature of 10 K. XRD pattern of the anodized GaAs(111)B sample. (A) Optical microscopy image of the opened regions in the photoresist on the glass substrate for deposition of the metal contacts on the selected GaAs nanowire. The inset
Integrated photonics multi-waveguide devices for optical trapping and Raman spectroscopy: design, fabrication and performance demonstration
Beilstein J. Nanotechnol. 2020, 11, 829–842, doi:10.3762/bjnano.11.68
- smooth waveguide facets. For this step, we use a double layer resist (hard mask/photoresist) for good dimensional control and high etch resistance. For most devices, to facilitate filling, the microbath has side channels (see subsection on the microbath), which are etched simultaneously with the
- , because this device is made from a dummy wafer, for which we only used photoresist as the masking layer during the DRIE process. The actual devices used for the experiments do not have this feature, since in their fabrication, we applied the double layer resist described above. Figure 6d is a camera image
Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars
Beilstein J. Nanotechnol. 2019, 10, 2383–2395, doi:10.3762/bjnano.10.229
- lithography and a metallic hard mask (Ti/Ni), we have realized micropillar arrays with a height of 4.5 µm, a diameter of 700 nm, and a pitch of 4 µm. The fabrication process (Figure 1a–d) started with coating the samples with photoresist (AZ5214E) and exposing them to a UV laser (λ = 365 nm, Heidelberg µPG101
Atomic force acoustic microscopy reveals the influence of substrate stiffness and topography on cell behavior
Beilstein J. Nanotechnol. 2019, 10, 2329–2337, doi:10.3762/bjnano.10.223
- able to characterize materials at high lateral resolution. To produce substrates of tunable stiffness and topography, we imprint nanostripe patterns on undeveloped and developed SU-8 photoresist films using electron-beam lithography (EBL). Elastic deformations of the substrate surfaces and the cells
- for the tissue regeneration therapy in biomedicine. Keywords: atomic force acoustic microscopy (AFAM); cell growth; nanopattern; stiffness; SU-8 photoresist; topography; Introduction The interactions of cells with extracellular matrices (ECMs) play important roles in regenerative medicine and tissue
- SU-8 photoresist films as the substrate and generated local changes in the stiffness and the nanopattern topography on the surface. The SU-8 photoresist has been used as the material for biosensors in living tissues [24] and cell culture molds in vitro due to its excellent biocompatibility [16] and
Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices
Beilstein J. Nanotechnol. 2019, 10, 349–355, doi:10.3762/bjnano.10.34
- geometry, the second step was used for the fabrication of the electrodes. In the first photolithography step, graphene was coated with a 1340 nm thick layer of photoresist (AZ 1512 HS of MicroChemicals.com) (Figure 1a). Then, the geometry of the device was defined by direct laser writing photolithography
- (Figure 1b), followed by the development of the exposed photoresist in AZ 351B (1:4) developer (MicroChemicals.com, Figure 1c). After this development, the excess of graphene was removed with O2 plasma (Figure 1d). Finally, we removed the photoresist layer (Figure 1e) using different protocols, as we
- describe next. In the second photolithography step, the previously patterned graphene was coated with a 820 nm thick layer of poly(dimethylglutarimide) (PMGI)-based resist, LOR5A from Microchem.com, followed by 1340 nm thick layer of photoresist AZ 1512 HS (Figure 1f). After the UV exposition, the
Femtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaics
Beilstein J. Nanotechnol. 2018, 9, 3025–3038, doi:10.3762/bjnano.9.281
- electrical and high thermal conductivity, the photoresist SU8 was used for this purpose. In order to apply the photoresist, a precursor solution was distributed evenly on the sample via spin coating (Figure 12b). Subsequently, this solution was photochemically converted into SU8 and cured by means of thermal
- compensated, since the spin-coated photoresist insulates any potentially occurring irregularities such as microcavities. The microcells were connected in a parallel manner and exhibited efficiencies between 0.15% and 2.9% under 1 sun illumination. Under concentrated illumination, significant efficiency
- approach (left) to CISe micro absorbers (middle and right). Scheme of the process for manufacturing solar cells from microabsorbers. a) CISe absorber, b) spin coating of photoresist (insulator), c) reactive ion etching in Ar+ plasma, and d) addition of CdS and ZnO buffer layers and Al:ZnO front contact
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