Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

• Stefania Castelletto,
• Abdul Salam Al Atem,
• Faraz Ahmed Inam,
• Hans Jürgen von Bardeleben,
• Sophie Hameau,
• Ahmed Fahad Almutairi,
• Gérard Guillot,
• Shin-ichiro Sato,
• Alberto Boretti and
• Jean Marie Bluet

Beilstein J. Nanotechnol. 2019, 10, 2383–2395, doi:10.3762/bjnano.10.229

• element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of VSi and NCVSi for in vivo imaging and sensing in the infrared. Keywords: color centers; micropillars; proton irradiation; quantum sensing; silicon carbide; vacancy

• ) Optical microscopy and SEM images of various steps highlighted in the top row. (i) Proton irradiation SRIM simulation, with H+ stopping line (Rp); (ii) schematics of the vacancy locations in the material. (iii) SEM image of a single pillar. (a–c) Room-temperature PL spectra of the pillars and the gap area

Defect formation in multiwalled carbon nanotubes under low-energy He and Ne ion irradiation

• Santhana Eswara,
• Jean-Nicolas Audinot,
• Brahime El Adib,
• Maël Guennou,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2018, 9, 1951–1963, doi:10.3762/bjnano.9.186

• appearance of magnetism was reported for graphite after proton irradiation [18] and of fullerenes after the irradiation with heavy ions [19]. For the development of novel technological applications, being able to modify the structure of CNTs alone is not sufficient. It is also important to relate the