Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• × magnification. The spectral resolution was of the order of 0.5 cm−1. A 532 nm semiconductor laser was used to illuminate the samples. The measurements were performed without detection of polarization of the scattered light. A liquid nitrogen-cooled multichannel silicon CCD camera was used as a detector. Results

The influence of an interfacial hBN layer on the fluorescence of an organic molecule

• Christine Brülke,
• Oliver Bauer and
• Moritz M. Sokolowski

Beilstein J. Nanotechnol. 2020, 11, 1663–1684, doi:10.3762/bjnano.11.149

• pumped cw semiconductor laser (Coherent Sapphire LP UBB CDRH) with a wavelength of 458 nm (photon energy of 2.698 eV or 21,816 cm−1) and P = 50 mW. To block the laser light from entering the spectrometer, a long-pass filter (cut-off at 475 nm) was positioned in front of the entrance slit of the

Photoluminescence of CdSe/ZnS quantum dots in nematic liquid crystals in electric fields

• Margarita A. Kurochkina,
• Elena A. Konshina and
• Daria Khmelevskaia

Beilstein J. Nanotechnol. 2018, 9, 1544–1549, doi:10.3762/bjnano.9.145

• an excitation light wavelength 405 nm was used. We have used a MicroTime 100 laser scanning microscope (PicoQuant, Germany) to study the kinetics of the luminescence decay of QDs. The semiconductor laser with a frequency of 10 MHz and pulse duration of ca. 80 ps at a wavelength of 409 nm was used in

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• lens on top of a broad area semiconductor laser ridge. The film lens is intended to guarantee laser operation in the fundamental transverse mode. An undesired deviation of the film lens layer thickness of only a few tens of nanometers may change the effective refractive index of the lens for the

• sequence of a semiconductor laser, mainly consisting of several layers of Ga(As)Sb quantum dots (QD) (as active material) embedded in GaAs, surrounded by n- and p-doped layers of Al0.5Ga0.5As (for the diode and waveguide structure), has been grown on an n-doped GaAs substrate (called sample type B, for

• this example a way to monitor several etch steps of a sample is shown and a possibility to incorporate sample design features required for RAS control is given. A common type of semiconductor laser is a ridge waveguide laser [29] – with a broad active region and ridge in our case. Broad area lasers

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

• D. J. Lockwood,
• N. L. Rowell,
• A. Benkouider,
• A. Ronda,
• L. Favre and
• I. Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2498–2504, doi:10.3762/bjnano.5.259

• 25 K) using a Bomem DA3 FTIR spectrometer equipped with a cooled Ge (Applied Detector Corporation) detector, and the samples were excited with loosely-focused light from a GaN-based semiconductor laser (70 mW at 405 nm) or from an argon ion laser (35 mW at 458 nm). Results and Discussion The PL

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

• Thomas H. Loeber,
• Dirk Hoffmann and
• Henning Fouckhardt

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

• QD layers, an electrically pumped efficient QD laser was realized with an emission wavelength of λ ≈ 0.900 µm at a temperature of 84 K. Keywords: V/III flux ratio; GaSb quantum dots; growth temperature; semiconductor laser; Stranski–Krastanov growth; Introduction GaSb quantum dots (QDs) grown on