Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• Centre «Crystallography and Photonics», Russian Academy of Sciences, 59 Leninskiy prospekt, Moscow, Russia Prokhorov General Physics Institute, Russian Academy of Sciences, 38 Vavilov Str., Moscow, Russia 10.3762/bjnano.14.80 Abstract This article describes an approach for synthesizing silicon phosphide

• calculations; semiconductor nanocrystals; silicon phosphide; Introduction Advancements in electronics and related fields are calling for new ways of synthesizing compounds. Subsequently, recognizing and utilizing the special properties of nanoparticles (NPs) of new materials using emerging methods offers a

• batteries. For the practical application of the materials, however, the problems of low conductivity and dramatic volume expansion of Si after full lithiation must still be solved [15]. To this end, silicon phosphides are actively studied. Layered silicon phosphide and diphosphide, for example, provide