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1 article(s) from Sadhasivan, Dhanalakshmi Krishnan

Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain

Kalai Selvi Kanagarajan and
Dhanalakshmi Krishnan Sadhasivan

Beilstein J. Nanotechnol. 2024, 15, 713–718, doi:10.3762/bjnano.15.59

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Figure 1: Cross-sectional schematic of the proposed VTFET with DLWLS + spacer device.

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Figure 2: Comparison between VTFET with DLWLS + spacer, DLWLS, and spacer regarding electron concentration.

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Figure 3: Comparison between VTFET with DLWLS + spacer, DLWLS, and spacer regarding electric field strength.

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Figure 4: Comparison between VTFET with DLWLS + spacer, DLWLS, and spacer regarding energy band profile.

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Figure 5: Energy band diagrams of the proposed VTFET with DLWLS + spacer in on-and off-states.

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Figure 6: ^I_d ^vs^V_gs ^{of the VTFET with DLWLS + spacer and the model in} [12].

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Figure 7: Comparison between transfer characteristics of VTFET with DLWLS + spacer, DLWLS, and spacer.

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Figure 8: Capacitance (C_gs)–voltage characteristics of the three models.

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Figure 9: Capacitance (C_gd)–voltage characteristics of the three models.

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Published 19 Jun 2024

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