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Search for "phonons" in Full Text gives 79 result(s) in Beilstein Journal of Nanotechnology.

Time-resolved probing of laser-induced nanostructuring processes in liquids

  • Maximilian Spellauge,
  • David Redka,
  • Mianzhen Mo,
  • Changyong Song,
  • Heinz Paul Huber and
  • Anton Plech

Beilstein J. Nanotechnol. 2025, 16, 968–1002, doi:10.3762/bjnano.16.74

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  • initial particle temperature. For smaller particles, as shown in Figure 7B, the results revealed that the timescale for heat dissipation was comparable to that of electron–phonon coupling. This suggests that significant energy loss had occurred before electrons and phonons reached thermal equilibrium
  • understanding of the optical response of the SPR helped to clarify specifics of electron dynamics and coupling to the phonons and close boundaries. Valleé and Del Fatti et al. [117][118] and others [119][120] addressed size effects of electron dynamics as well structural relaxations by these model systems
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Published 02 Jul 2025

Ar+ implantation-induced tailoring of RF-sputtered ZnO films: structural, morphological, and optical properties

  • Manu Bura,
  • Divya Gupta,
  • Arun Kumar and
  • Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 872–886, doi:10.3762/bjnano.16.66

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  • occurs because of the fast decay of phonons or an anharmonic process due to damage [25]. One can determine the phonon lifetime from the Raman spectra using the energy–time uncertainty equation [25]: Here represents Raman shift, which is of the order of the FWHM (Γ) of the Raman mode; thus, the lifetime
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Published 11 Jun 2025

Facile one-step radio frequency magnetron sputtering of Ni/NiO on stainless steel for an efficient electrode for hydrogen evolution reaction

  • Ha Huu Do,
  • Khac Binh Nguyen,
  • Phuong N. Nguyen and
  • Hoai Phuong Pham

Beilstein J. Nanotechnol. 2025, 16, 837–846, doi:10.3762/bjnano.16.63

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  • displayed the prominent peaks shown in Figure 3. The bands at 200 to 600 cm−1 represent one phonon (1P), whereas the bands at 650 to 1100 cm−1 could be assigned to two phonons (2P) of NiO species in the electrode. In particular, the Raman peak at 552 cm−1 was indexed into the 1P longitudinal optical (LO
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Published 06 Jun 2025

N2+-implantation-induced tailoring of structural, morphological, optical, and electrical characteristics of sputtered molybdenum thin films

  • Usha Rani,
  • Kafi Devi,
  • Divya Gupta and
  • Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 495–509, doi:10.3762/bjnano.16.38

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  • the target material. This balance highlights the importance of electronic and nuclear interactions in the energy transfer processes during ion implantation. Furthermore, of the total energy of 15 keV from a single nitrogen ion, 8.5 keV produce ionization, while 6.2 keV generate phonons, and 0.29 keV
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Published 01 Apr 2025

Recent advances in photothermal nanomaterials for ophthalmic applications

  • Jiayuan Zhuang,
  • Linhui Jia,
  • Chenghao Li,
  • Rui Yang,
  • Jiapeng Wang,
  • Wen-an Wang,
  • Heng Zhou and
  • Xiangxia Luo

Beilstein J. Nanotechnol. 2025, 16, 195–215, doi:10.3762/bjnano.16.16

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  • triggers a rapid, collective resonance among them [44]. This resonance leads to interactions between the excited free electrons and other electrons, lattice phonons, and surface ligands, converting the kinetic energy of these electrons into thermal energy through the Joule mechanism, an exceptionally
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Published 17 Feb 2025

A low-kiloelectronvolt focused ion beam strategy for processing low-thermal-conductance materials with nanoampere currents

  • Annalena Wolff,
  • Nico Klingner,
  • William Thompson,
  • Yinghong Zhou,
  • Jinying Lin and
  • Yin Xiao

Beilstein J. Nanotechnol. 2024, 15, 1197–1207, doi:10.3762/bjnano.15.97

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  • keV gallium ions with skin. The results are displayed in Figure 1. The projected range is highlighted in the ion trajectories plot in Figure 1A. The recoiling sample atoms in the collision cascade create the majority of phonons and ionization (see cascade plots in Figure 1B) and, therefore, need to be
  • considered when evaluating the heat flux into skin (refer to Table 1). The simulated energy losses, given in Table 1, show that the ions lose the majority of their energy (>90%) to phonons and ionization at 5 keV incident energy. This result is in good agreement with the literature [13][15]. The total amount
  • of energy loss to phonons and ionization and, therefore, heat is significantly (by a factor of six) lower for 5 keV ions than for 30 keV ion [17] as the incident ions have less initial energy to lose. The sputtering yield is reduced (by a factor of two) for 5 keV ions in comparison to 30 keV ions [17
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Published 27 Sep 2024

Quantum-to-classical modeling of monolayer Ge2Se2 and its application in photovoltaic devices

  • Anup Shrivastava,
  • Shivani Saini,
  • Dolly Kumari,
  • Sanjai Singh and
  • Jost Adam

Beilstein J. Nanotechnol. 2024, 15, 1153–1169, doi:10.3762/bjnano.15.94

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  • implication. After getting the value of the deformation potential using Kawaji theory [80], we can formulate the phonon-limited mobility (μ2D) because of the interaction of the charge carriers with low acoustic phonons as [81]: where C denotes the elastic constant of a 2D material and is the geometric mean
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Published 11 Sep 2024

Interface properties of nanostructured carbon-coated biological implants: an overview

  • Mattia Bartoli,
  • Francesca Cardano,
  • Erik Piatti,
  • Stefania Lettieri,
  • Andrea Fin and
  • Alberto Tagliaferro

Beilstein J. Nanotechnol. 2024, 15, 1041–1053, doi:10.3762/bjnano.15.85

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  • temperature because the higher number of phonons increases the efficiency of thermal transport [75]. NDs show also exceptional mechanical strength and low chemical reactivity, making them sound candidates for thin film coatings [76]. These properties are counterbalanced by a low electrical conductivity due to
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Published 16 Aug 2024

Stiffness calibration of qPlus sensors at low temperature through thermal noise measurements

  • Laurent Nony,
  • Sylvain Clair,
  • Daniel Uehli,
  • Aitziber Herrero,
  • Jean-Marc Themlin,
  • Andrea Campos,
  • Franck Para,
  • Alessandro Pioda and
  • Christian Loppacher

Beilstein J. Nanotechnol. 2024, 15, 580–602, doi:10.3762/bjnano.15.50

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  • buffer of N samples. The windowing duration is then: In UHV and at low temperature, the qPlus sensor’s thermal fluctuations stem from stochastic phonons of the quartz in thermal equilibrium with the thermostat at the energy kBT. The phonons excite the qPlus sensor and statistically repeat over time with
  • a frequency spectrum yielding a thermal noise rms PSD described by that of an equivalent SHO (Equation 17). The spectrum conceals the mechanical properties of the SHO and exhibits a resonance at f1. Thus, stochastic phonons with frequencies at, or close to, the SHO resonance frequency, produce long
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Published 23 May 2024

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS2 thin films with domains much smaller than the laser spot size

  • Felipe Wasem Klein,
  • Jean-Roch Huntzinger,
  • Vincent Astié,
  • Damien Voiry,
  • Romain Parret,
  • Houssine Makhlouf,
  • Sandrine Juillaguet,
  • Jean-Manuel Decams,
  • Sylvie Contreras,
  • Périne Landois,
  • Ahmed-Azmi Zahab,
  • Jean-Louis Sauvajol and
  • Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

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  • accuracy in order to evaluate the thickness of a MoS2 flake. These phonons modes are (i) the in-plane phonon mode involving relative motion of Mo and S atoms with E′ symmetry for a monolayer (E12g for bulk) and (ii) the out-of-plane phonon mode involving only out-of-plane motions of S atoms with A′1
  • resonance conditions), other bands associated to different second-order processes are observed in the Raman spectra with a strong intensity, their frequencies, widths, and intensity depending on the excitation energy [36]. In addition, resonance conditions alter the symmetry selection rules of phonons of
  • that in the latter flakes, new bands, named FLA and FTA, are superimposed to the second-order Raman spectra. The FLA and FTA modes in θ-2L-MoS2 are attributed, respectively, to folded longitudinal acoustic phonons and folded transverse acoustic phonons of the monolayer due to the presence of a moiré
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Published 07 Mar 2024

Nanoarchitectonics of photothermal materials to enhance the sensitivity of lateral flow assays

  • Elangovan Sarathkumar,
  • Rajasekharan S. Anjana and
  • Ramapurath S. Jayasree

Beilstein J. Nanotechnol. 2023, 14, 988–1003, doi:10.3762/bjnano.14.82

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  • non-radiatively in the form of phonons. The phonons generate heat in these materials [36] (Figure 4C). Transition metal sulfide nanomaterials gain much attention in photothermal applications, because of their low cost, high biocompatibility, and considerably high PCE. Nanoparticles of copper sulfide
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Published 04 Oct 2023

Isolation of cubic Si3P4 in the form of nanocrystals

  • Polina K. Nikiforova,
  • Sergei S. Bubenov,
  • Vadim B. Platonov,
  • Andrey S. Kumskov,
  • Nikolay N. Kononov,
  • Tatyana A. Kuznetsova and
  • Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

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  • -ray fluorescence analyses and XRD analyses of samples annealed with phosphorus at 670, 400, and 900 °C. Calculated frequencies of optical phonons (cm−1) and preliminary designation of the experimentally observed vibrational frequencies of Si3P4 NPs. Supporting Information Supporting Information File
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Published 26 Sep 2023

A graphene quantum dots–glassy carbon electrode-based electrochemical sensor for monitoring malathion

  • Sanju Tanwar,
  • Aditi Sharma and
  • Dhirendra Mathur

Beilstein J. Nanotechnol. 2023, 14, 701–710, doi:10.3762/bjnano.14.56

Graphical Abstract
  • . 1385 cm−1) and G bands (ca. 1585 cm−1) with an excitation wavelength of 532 nm as shown in Figure 5b, resembling those of a standard graphitic structure [38]. As a result of defects in the sp2-hybridized GQDs structure, the D band occurs due to transverse optical (TO) phonons about the k point of the
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Published 09 Jun 2023

Thermal transport in kinked nanowires through simulation

  • Alexander N. Robillard,
  • Graham W. Gibson and
  • Ralf Meyer

Beilstein J. Nanotechnol. 2023, 14, 586–602, doi:10.3762/bjnano.14.49

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  • , communications, and many others [1][2][3][4][5]. In many nanoscale systems, thermal transport cannot be simply described as it would be at larger scales [6]. At such scales, the carriers of energy (such as phonons) have finite transit lengths that are no longer negligible compared to the system dimensions
  • additional scattering of phonons at boundaries and cause interesting effects due to phonon reflections [12][13][14]. These effects are typically not seen at the macroscopic scale, but instead reflect the sophisticated nature of transport and finite sizes at the nano- and mesoscales. Recently, there have been
  • seems to be less pronounced for systems with either long segment lengths or smaller wire radii. The impact of segment length and wire radius is similar, as both control the ratio r/l. The ratio between the radius and the segment length partially dictates the quantity of phonons that can travel large
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Published 15 May 2023

Transferability of interatomic potentials for silicene

  • Marcin Maździarz

Beilstein J. Nanotechnol. 2023, 14, 574–585, doi:10.3762/bjnano.14.48

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  • all previously optimized structures were computed using the metric tensor formulation of strain in the density functional perturbation theory (DFPT) [23]. The mechanical stability of the analyzed structures was verified by calculating the so-called Kelvin moduli [24][25]. To calculate the phonons, the
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Published 08 May 2023

Conjugated photothermal materials and structure design for solar steam generation

  • Chia-Yang Lin and
  • Tsuyoshi Michinobu

Beilstein J. Nanotechnol. 2023, 14, 454–466, doi:10.3762/bjnano.14.36

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  • . The free electrons of metallic nanomaterials absorb light. This is followed by specific oscillations that give the photothermal effect. This effect originates from the surface plasmon resonance (SPR) of electrons. The SPR-based thermal energy is then transferred to lattice phonons (Figure 3a). In
  • either undergo radiative relaxation in the form of photons or nonradiative relaxation in the form of phonons (heat) to release and transfer energy to impurities/defects or dangling bonds on the material surface. When energy is released in the form of phonons, local heating of the lattice is induced
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Published 04 Apr 2023

Plasmonic nanotechnology for photothermal applications – an evaluation

  • A. R. Indhu,
  • L. Keerthana and
  • Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

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  • pondered on in the final section of the article, taking into account the specific requirements from different applications. Keywords: nanoparticle heating; phonons; photothermal; plasmonic; stability; surface plasmon resonance; Review 1 Introduction With an ever-increasing demand for energy and the
  • mechanisms of plasmon relaxation (through non-radiative scattering) result in the eventual coupling of the scattered plasmons to phonons, their understanding is critical for designing materials for such applications. Simplistically, phonons are quantized particles or waves with a unit of vibrational energy
  • Planck’s constant, and q is the wave vector of the phonon oscillations. These elementary excitation phonons are bosons with a wave vector of k = 2π/λ. Crystal defects and other such sources of anharmonicity can change their frequencies and, hence, their coupling characteristics to electrons and the
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Published 27 Mar 2023

Intermodal coupling spectroscopy of mechanical modes in microcantilevers

  • Ioan Ignat,
  • Bernhard Schuster,
  • Jonas Hafner,
  • MinHee Kwon,
  • Daniel Platz and
  • Ulrich Schmid

Beilstein J. Nanotechnol. 2023, 14, 123–132, doi:10.3762/bjnano.14.13

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  • expertise. For inspiration, we turn to quantum optomechanics and its sister field of quantum electromechanics, as they both report outstanding signal-to-noise ratios [14]. In the former, a reflective mechanical resonator constitutes half of a Fabry–Pérot cavity, converting photons to phonons and vice versa
  • mode splitting is a good way to measure the coupling rates. Here, the phonons from the first mode will have their frequency upconverted to the same as the second mode’s phonons, thus allowing them to interact. This pump effectively amplifies the single phonon–phonon coupling rate of the mode
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Published 19 Jan 2023

Enhanced electronic transport properties of Te roll-like nanostructures

  • E. R. Viana,
  • N. Cifuentes and
  • J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

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  • , respectively, was found, demonstrating strong scattering by phonons in this temperature range. At lower temperatures, the electronic conduction is dominated by NNH in the acceptor band with a low activation energy ENNH ≈ 0.59 meV for both NWs. These values of ENNH correspond to a concentration of acceptors of
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Published 08 Nov 2022

Revealing local structural properties of an atomically thin MoSe2 surface using optical microscopy

  • Lin Pan,
  • Peng Miao,
  • Anke Horneber,
  • Alfred J. Meixner,
  • Pierre-Michel Adam and
  • Dai Zhang

Beilstein J. Nanotechnol. 2022, 13, 572–581, doi:10.3762/bjnano.13.49

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  • intensity shown in Figure 3c. Raman scattering involves interaction between the incident light with the electrons in the ground state, the coupling between electrons in the excited state and phonons (vibrational modes), and scattered light radiation. Both charge transfer and dipole–dipole interaction can
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Published 01 Jul 2022

Impact of electron–phonon coupling on electron transport through T-shaped arrangements of quantum dots in the Kondo regime

  • Patryk Florków and
  • Stanisław Lipiński

Beilstein J. Nanotechnol. 2021, 12, 1209–1225, doi:10.3762/bjnano.12.89

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  • dot systems under the influence of phonons. The system is modelled by the extended Anderson–Holstein Hamiltonian. The finite-U mean-field slave boson approach is used to study many-body effects. Phonons influence both interference and correlations. Depending on the dot unperturbed energy and the
  • studied in a number of papers [39][40][41][42][43][44]. Due to participation of localized phonons in single electron tunneling the phonon side bands appear in the spectral function of the dot. Interestingly, similar effects have been also observed in the rigid structures of semiconductor quantum dots
  • molecule. Such a phonon interacts only with the electrons in the same QD. In the following considerations it is assumed that local phonons couple either to the open dots (OQDs) directly connected to the leads or to the dots attached to the interacting side (IQDs). The former type of coupling mainly
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Published 12 Nov 2021

First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications

  • Muhammad Atif Sattar,
  • Najwa Al Bouzieh,
  • Maamar Benkraouda and
  • Noureddine Amrane

Beilstein J. Nanotechnol. 2021, 12, 1101–1114, doi:10.3762/bjnano.12.82

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  • shows the interaction between phonons and the lattice volume. It relates to the vibrational frequency change when the volume of the crystal lattice is varied. It also demonstrates the effect of temperature variations on the size or dimensions of the crystal structure. The Debye temperature can be
  • conductivity value of the π-SnSe alloy is 4.63 × 1018 Ω−1·m−1·s−1 at 1000 K. In solids, the total thermal conductivity (κtot) originates due to holes/electrons drifting throughout the crystals along with phonons and heat flow. It is the combination of the electronic part of the thermal conductivity (κe) and
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Published 05 Oct 2021

Is the Ne operation of the helium ion microscope suitable for electron backscatter diffraction sample preparation?

  • Annalena Wolff

Beilstein J. Nanotechnol. 2021, 12, 965–983, doi:10.3762/bjnano.12.73

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Published 31 Aug 2021

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

  • Jakub Kierdaszuk,
  • Piotr Kaźmierczak,
  • Justyna Grzonka,
  • Aleksandra Krajewska,
  • Aleksandra Przewłoka,
  • Wawrzyniec Kaszub,
  • Zbigniew R. Zytkiewicz,
  • Marta Sobanska,
  • Maria Kamińska,
  • Andrzej Wysmołek and
  • Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

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  • the scattering on phonons. Consequently, the intensity ratio of 2D and G Raman bands, R2DG, decreases when the carrier concentration increases. The histograms of R2DG for all the measured samples are presented in Figure 4. The highest standard deviation is observed for the N100 sample, which is 1.5
  • and hydrogen dopants in the pyridinic position result in n-type doping [48]. Thus, defect origin and density impact graphene strain and carrier concentration as well as the interaction with the substrate. The G band is generated by the scattering on iTO or iLO phonons near the Γ point of the Brillouin
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Published 22 Jun 2021

Mapping the local dielectric constant of a biological nanostructured system

  • Wescley Walison Valeriano,
  • Rodrigo Ribeiro Andrade,
  • Juan Pablo Vasco,
  • Angelo Malachias,
  • Bernardo Ruegger Almeida Neves,
  • Paulo Sergio Soares Guimarães and
  • Wagner Nunes Rodrigues

Beilstein J. Nanotechnol. 2021, 12, 139–150, doi:10.3762/bjnano.12.11

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  • relative permittivity in the visible range, εr(ω→∞). For solid-state cubic crystals, the two values are related by the Lyddane–Sachs–Teller relation [23], which gives the ratio εr(0)/εr(∞) in terms of the ratio between the squared values of the long-wavelength longitudinal and transverse optical phonons in
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Published 28 Jan 2021
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