Anomalous current–voltage characteristics of SFIFS Josephson junctions with weak ferromagnetic interlayers

• Tairzhan Karabassov,
• Anastasia V. Guravova,
• Aleksei Yu. Kuzin,
• Elena A. Kazakova,
• Shiro Kawabata,
• Boris G. Lvov and
• Andrey S. Vasenko

Beilstein J. Nanotechnol. 2020, 11, 252–262, doi:10.3762/bjnano.11.19

• that increasing αm the length of the superconducting correlations decay in the ferromagnetic layers decreases, see Equation 13, and the suppression of superconducting correlations in the F layers occurs faster. We can compare these results with the I–V characteristics of SIFS Josephson junctions [45

• structures Nf1(E − eV) Nf2(E) in the integrand of the current equation, Equation 16, produce more complex behavior of the I–V characteristics. We also notice that in recent experiments on SFIFS junctions as injectors of superconductor-ferromagnetic transistors some fine structures of the subgap quasiparticle

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• –matrix multiplication [10][11][12]. An access to a continuum of resistance states exhibiting highly linear current–voltage [I(V)] characteristics were exploited to achieve a numerical precision up to 8 bits. Ag-based filamentary resistive switches [13][14][15][16][17][18][19][20][21][22][23][24][25][26

• keep the junction resistance in the targeted metallic resistance range, where the nonlinear tunneling I(V) characteristics, which are unfavorable for neuromorphic operations, are avoided. These characteristics were further investigated as a function of the amplitude and the frequency fdrive of the

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• within OSC-based SAMs with regions of insulating SAM made from large band gap alkanethiolates. The new method is demonstrated using a phenyl-linked anthracenethiolate (PAT), 4-(anthracene-2-ylethynyl)benzyl thiolate. I–V characteristics of differently shaped PAT-islands were measured using the AFM tip as

• performance of field effect transistor devices using pentacene as organic semiconductor [33]. In that work, the increase in performance was attributed to the reduced sheet resistance for charge transport in the anthracenethiol monolayer supporting the pentacene multilayer. In order to study the I–V

• characteristics of differently shaped islands within a PAT SAM, first PAT-layers were deposited on the Au(111) surface by immersing Au substrates into ethanol solution of PAT protected with a thioester group. Deposition was carried out at 70 °C. At this elevated temperature the thioester protective group was

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

• Wanli Yang,
• Shuaiqi Fan,
• Yuxing Liang and
• Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

• non-equilibrium minority carriers under the influence of a piezo potential and to calculate the corresponding current–voltage (I–V) characteristics of a piezoelectric p–n junction exposed to mechanical loading. An effective solution to describe this non-equilibrium process has been put forward

• piezo effect can be effectively tuned and controlled by mechanical loadings. Meanwhile, numerical results show that a loading location closer to the SCZ produces a stronger effect on the I–V characteristics of a piezoelectric p–n junction, implying that the tuning effect of mechanical loadings depends

• tuning performance on higher doped piezoelectric p–n junctions requires the prestress loadings to be applied closer to the interface of p- and n-zone. This study on a non-equilibrium process of piezoelectric p–n junctions has significance for piezotronics. Keywords: depletion layer; I–V characteristics

Kelvin probe force microscopy work function characterization of transition metal oxide crystals under ongoing reduction and oxidation

• Dominik Wrana,
• Karol Cieślik,
• Wojciech Belza,
• Christian Rodenbücher,
• Krzysztof Szot and
• Franciszek Krok

Beilstein J. Nanotechnol. 2019, 10, 1596–1607, doi:10.3762/bjnano.10.155

• , providing the possibility of obtaining current maps as well as I–V characteristics at a given spot. Figure 2a and Figure 2b show the topography and current maps of the TiO nanowire network on SrTiO3(100). TiO has a higher conductivity than the surrounding SrTiO3 (STO) surface (the no current areas at

• nanowire edges are due to technical artefacts, such as wear of the coating of the conductive probe). To better illustrate the differences, I–V characteristics of TiO and STO were collected and are presented in Figure 2c. Given the ohmic behavior at the TiO nanowire, the conductance of the whole system (tip

Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere

• Petr Knotek,
• Tomáš Plecháček,
• Jan Smolík,
• Petr Kutálek,
• Filip Dvořák,
• Milan Vlček,
• Jiří Navrátil and
• Čestmír Drašar

Beilstein J. Nanotechnol. 2019, 10, 1401–1411, doi:10.3762/bjnano.10.138

• had to be used to decrease the plasma intensity. The topography, phase shift image, Kelvin probe force microscopy and I–V characteristics were measured by the AFM SolverPro M, Nt-MDT (Russia) with a resolution of 512 × 512 pixels. The HA_NC tips (resonant frequency 140 kHz, force constant 3.5 N/m

• ) were used for measuring the metal layer thickness by the scratch method and phase contrast [30][32], while conductive NSG01/TiN tips (150 kHz, 5.1 N/m) were used for Kelvin probe force measurements and contact CSG-10/Pt tips (22 kHz, 0.11 N/m) for recording I–V characteristics [33][34] for 10 replicas

• , tentatively summarized as I–V characteristics, are strongly affected by the oxidation of Bi2Se3. The perturbation with a height of more than 1 µm could be easily formed by the oxidation of a highly O-mobile material, e.g., BiOx. This limits the usage of I–V measurements in the static electrical contact of the

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

• David van Treeck,
• Johannes Ledig,
• Gregor Scholz,
• Jonas Lähnemann,
• Mattia Musolino,
• Abbes Tahraoui,
• Oliver Brandt,
• Andreas Waag,
• Henning Riechert and
• Lutz Geelhaar

Beilstein J. Nanotechnol. 2019, 10, 1177–1187, doi:10.3762/bjnano.10.117

• spectra consist of emission lines originating from different quantum wells, and the width of the spectra increases with decreasing peak emission energy. The corresponding I–V characteristics are described well by a modified Shockley equation. The key advantage of this measurement approach is the

• approach, single NWs can be directly contacted with a probe tip installed in a scanning electron microscope (SEM). For instance, using this technique, Lee et al. studied the current–voltage (I–V) characteristics of single GaN-based NW LEDs in the ensemble. However, they were not able to measure the

• top contacts and on the back side of the Si substrate, respectively. A more detailed description of the growth and processing procedure as well as the EL and I–V characteristics of the NW-ensemble LED can be found in [12]. The EL and I–V measurements on single-NW LEDs were carried out in a Zeiss

A carrier velocity model for electrical detection of gas molecules

• Ali Hosseingholi Pourasl,
• Sharifah Hafizah Syed Ariffin,
• Mohammad Taghi Ahmadi,
• Razali Ismail and
• Niayesh Gharaei

Beilstein J. Nanotechnol. 2019, 10, 644–653, doi:10.3762/bjnano.10.64

• . Thus, the energy dispersion relation of AGNR is developed considering the molecular adsorption effect using a tight binding (TB) method. The carrier velocity is calculated based on the density of states (DOS) and carrier concentration (n) to obtain I–V characteristics and to monitor its variation in

• the presence of the gas molecules. Furthermore, the I–V characteristics and energy band structure of the AGNR sensor are simulated using first principle calculations to investigate the gas adsorption effects on these properties. To ensure the accuracy of the proposed model, the I–V characteristics of

• the AGNR sensor that are simulated based both on the proposed model and first principles calculations are compared, and an acceptable agreement is achieved. Keywords: armchair graphene nanoribbons; carrier velocity; gas sensor; I–V characteristics; molecular adsorption; Introduction The unique

Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• rhombohedral phases is observed in good agreement with Raman spectra. A) Cross section of the LMO-based MIM structure. B) Resistive switching cycles, I–V characteristics detailing the “set” and “reset” values. Mn K-edge position for the four representative LaMnO3+δ samples obtained by strategies I, II and III

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• layer were sequentially formed. Following the preparation of a-IGZO TFTs, all devices were annealed in N2 environment at 350 °C for 1 h before the electrical measurements. The channel width (W) and length (L) of the IGZO TFTs were 50 and 20 μm, respectively. All of the I–V characteristics were measured

Light extraction efficiency enhancement of flip-chip blue light-emitting diodes by anodic aluminum oxide

• Yi-Ru Huang,
• Yao-Ching Chiu,
• Kuan-Chieh Huang,
• Shao-Ying Ting,
• Po-Jui Chiang,
• Chih-Ming Lai,
• Chun-Ping Jen,
• Snow H. Tseng and
• Hsiang-Chen Wang

Beilstein J. Nanotechnol. 2018, 9, 1602–1612, doi:10.3762/bjnano.9.152

• typical light output power–current–voltage (L–I–V) characteristics of the LEDs with and without AAO structures. The AAO structures enhance the LEE of LEDs but do not change the L–I–V properties. Rigorous coupled-wave analysis We used the rigorous coupled-wave analysis (RCWA) to verify our hypothesis and

Synthesis and characterization of two new TiO₂-containing benzothiazole-based imine composites for organic device applications

• Anna Różycka,
• Agnieszka Iwan,
• Krzysztof Artur Bogdanowicz,
• Michal Filapek,
• Natalia Górska,
• Damian Pociecha,
• Marek Malinowski,
• Patryk Fryń,
• Agnieszka Hreniak,
• Jakub Rysz,
• Paweł Dąbczyński and
• Monika Marzec

Beilstein J. Nanotechnol. 2018, 9, 721–739, doi:10.3762/bjnano.9.67

• the I–V characteristics suggested differences in the planarity and conformation of the SP1 imine in the pure imine film or in the mixture with TiO2, PCBM and P3HT. Our results showed that investigated SP1 imine exhibited response under 88 mW/cm2 illumination (see Figure 16), however, the current

• architecture of the device is more likely to be used as a photodiode (I–V characteristics at first (I) and third (III) part of spectrum) than for solar cells (small effect under illumination at fourth (IV) part of current–voltage characteristics). However, additional work is required to improve the electrical

• TiO2 layer. A gold electrode was deposited by thermal evaporation in vacuum (5 × 10−6 mbar). The current–voltage (I–V) characteristics were measured under illumination of a AM1.5 solar simulator (Oriel 150 W). The light power density was measured by a Newport Oriel P/N 91150V reference solar cell

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

• Tino Wagner,
• Fabian Menges,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2018, 9, 129–136, doi:10.3762/bjnano.9.15

• the reconstruction method from sweeps of the bias current in Figure 2b. Two-terminal current–voltage (I–V) characteristics of the nanowire device, shown in Figure 3a, are calculated given the voltage drop across the source and drain electrodes, and the known current I passed through the nanowire. The

• solid line is extracted from the reconstructed nanowire model U(x, I), whereas the scattered points are calculated from the raw measurements corrected by the static offset, . The nanowire device displays mostly linear I–V characteristics with a slight suppression of the conductance near zero bias

• ) Voltage drop along the nanowire at different currents. Surface potential measurements at each bias are corrected by the static voltage offset present in all profiles (see Figure S4 in Supporting Information File 1). Electrical characteristics extracted from KFM measurements. (a) Two-terminal I–V

Electronic structure, transport, and collective effects in molecular layered systems

• Torsten Hahn,
• Tim Ludwig,
• Carsten Timm and
• Jens Kortus

Beilstein J. Nanotechnol. 2017, 8, 2094–2105, doi:10.3762/bjnano.8.209

• the I–V characteristics of our model devices. For the transport calculations, the electronic structure is obtained by DFT calculations using the common approach of constructing a model device for which the molecule of interest together with additional electrode atoms (scattering region, see below

(Metallo)porphyrins for potential materials science applications

• Lars Smykalla,
• Carola Mende,
• Michael Fronk,
• Pablo F. Siles,
• Michael Hietschold,
• Georgeta Salvan,
• Dietrich R. T. Zahn,
• Oliver G. Schmidt,
• Tobias Rüffer and
• Heinrich Lang

Beilstein J. Nanotechnol. 2017, 8, 1786–1800, doi:10.3762/bjnano.8.180

• -AFM current maps for the same areas indicated in a–d, (e) height–distance profile as indicated by the solid red line in (a), showing the organic film, thin molecular dendrites film, and single dendrites regions. The dotted line indicates the average height of the organic film, (j) local I–V

• characteristics for a single dendrite (3–4 nm height) as indicated with a black circle in (d), the I–V data represent an average of five consecutive cycles. The highest standard deviation (SD) for data points corresponds to 0.7. (For interpretation of the references to color in this figure caption, the reader is

Three-in-one approach towards efficient organic dye-sensitized solar cells: aggregation suppression, panchromatic absorption and resonance energy transfer

• Jayita Patwari,
• Samim Sardar,
• Bo Liu,
• Peter Lemmens and
• Samir Kumar Pal

Beilstein J. Nanotechnol. 2017, 8, 1705–1713, doi:10.3762/bjnano.8.171

• , using time-resolved fluorescence decay measurements. The electron transfer time scales from the dyes to TiO2 have also been characterized for each dye. The current–voltage (I–V) characteristics and the wavelength-dependent photocurrent measurements of the co-sensitized DSSCs reveal that FRET between the

• (TBP) using acetonitrile as a solvent, was used as electrolyte. The active area of all the devices were 0.64 cm2. Device characterization A Keithley multimeter was used to record the photocurrent–voltage (I–V) characteristics of the DSSCs, under 1 sun (100 mW cm−2) irradiance (AM 1.5 simulated

• of different molar ratios of SQ2/PPIX. (a) Fluorescence decay profiles of PPIX (red) and PPIX attached to TiO2 (green), (b) fluorescence decay patterns of SQ2 (blue) and SQ2 attached to TiO2 (pink). (a) I–V characteristics and (b) wavelength-dependent photocurrent of DSSCs sensitized with different

Process-specific mechanisms of vertically oriented graphene growth in plasmas

• Subrata Ghosh,
• Shyamal R. Polaki,
• Niranjan Kumar,
• Sankarakumar Amirthapandian,
• Mohamed Kamruddin and
• Kostya (Ken) Ostrikov

Beilstein J. Nanotechnol. 2017, 8, 1658–1670, doi:10.3762/bjnano.8.166

• function of the microwave power. Solid lines are to guide the eye. Water contact angle for the (a) nanographitic film (NG), grown at 600 °C and (b) VGNs, grown at 800 °C. I–V characteristics of vertical graphene nanosheets from four-probe measurements. Process parameters for VGNs growth by ECR-PECVD

Group-13 and group-15 doping of germanane

• Nicholas D. Cultrara,
• Maxx Q. Arguilla,
• Shishi Jiang,
• Chuanchuan Sun,
• Michael R. Scudder,
• R. Dominic Ross and
• Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

• GeH and As:GeH were 80 nm/20 nm (Ag/Au). Ga:GeH device contacts were prepared using 100 nm Au. Contact materials were selected after testing with multiple metals and selecting the metal that gave the highest current and most linear I–V characteristics. Additionally, four-probe measurements indicate

Parylene C as a versatile dielectric material for organic field-effect transistors

• Tomasz Marszalek,
• Maciej Gazicki-Lipman and
• Jacek Ulanski

Beilstein J. Nanotechnol. 2017, 8, 1532–1545, doi:10.3762/bjnano.8.155

• stacks investigated, (b) threshold voltage trends of successive transfer sweeps for different VD, (c) representative transfer I–V characteristics of the three transistor stacks. The arrows in (c) indicate the sweeping direction of VG. Reprinted with permission from [51], copyright 2016 Springer. Transfer

Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions

• Sreetama Banerjee,
• Daniel Bülz,
• Danny Reuter,
• Karla Hiller,
• Dietrich R. T. Zahn and
• Georgeta Salvan

Beilstein J. Nanotechnol. 2017, 8, 1502–1507, doi:10.3762/bjnano.8.150

• photoswitching, I–V characteristics and magnetoresistance measurements was performed immediately after the sample preparation. The total measurement time was about 1 h. The schematic diagram of the experimental set-up is shown in Figure 1. The entire sample surface was illuminated with a white light emitting

Charge transport in organic nanocrystal diodes based on rolled-up robust nanomembrane contacts

• Vineeth Kumar Bandari,
• Lakshmi Varadharajan,
• Longqian Xu,
• Abdur Rehman Jalil,
• Mirunalini Devarajulu,
• Pablo F. Siles,
• Feng Zhu and
• Oliver G. Schmidt

Beilstein J. Nanotechnol. 2017, 8, 1277–1282, doi:10.3762/bjnano.8.129

• the charge transport properties of the crystalline nanopyramids, an electrical characterization is performed by measuring the current–voltage (I–V) characteristics. As shown in Figure 2a, the strong charge transfer (CT) between VOPc and F16CuPc causes the heterojunction nanopyramids with double

• . (e) AFM topography image of the F16CuPc/VOPc/F16CuPc nanostructures. (a) I–V characteristics of three kinds of nanopyramid structures: pure VOPc (black), F16CuPc/VOPc (red) and F16CuPc/VOPc/F16CuPc (blue), (b) ln(I)–ln(V) plot showing the transition of transport regimes from ohmic to SCL. (a) Current

Performance of colloidal CdS sensitized solar cells with ZnO nanorods/nanoparticles

• Anurag Roy,
• Partha Pratim Das,
• Mukta Tathavadekar,
• Sumita Das and
• Parukuttyamma Sujatha Devi

Beilstein J. Nanotechnol. 2017, 8, 210–221, doi:10.3762/bjnano.8.23

• AM 1.5). A standard silicon solar cell (serial number 189/PVM351) from Newport, U.S. was used as a reference cell. The active area of the fabricated cells used for photovoltaic measurement was 0.25 cm2. Further, the I–V characteristics under normal light on CdS-sensitized ZnO films were measured

• characteristics of the colloidal CdS-sensitized ZnO-P, ZnO-R and ZnO-R+P films measured within the bias voltage −10 V to +10 V in visible light is shown in Supporting Information File 1, Figure S3, exhibiting ohmic response. I–V characteristics also sustain higher current generation for 1D ZnO-R than ZnO-P

• , I–V characteristics CdS-sensitized ZnO-P, ZnO-R and ZnO-R+P films, emission data on films and a table with performance details on different electrolytes. Acknowledgement AR gratefully acknowledges the INSPIRE programme of the Department of Science and Technology, Govt. of India for awarding a

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• function of the ion energy. Raman scattering spectra of samples obtained at different ion energies. Doping profiles measured by C–V profiling. Photoluminescence spectra of the grown InAs/GaAs structures with different levels of doping of the GaAs barrier layer. Dark I–V characteristics of the different

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• ) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of

• conducting silver glue deposited on the Pd contact. As a back ohmic contact to SiC a Pd metallic electrode was also used. Figure 1 is a schematic illustration of the Pd/graphene/4H-SiC/Pd vertical device. The current-voltage (I–V) characteristics of the fabricated devices were measured and analyzed in order

• Figure 2, the I–V characteristics of the graphene/SiC vertical devices display a rectifying behavior. The depicted curves correspond to different measurements of the same device with six Pd contacts. In fact, more than six Pd contacts were deposited on the graphene surface and we chose these six ones as