Diamond nanophotonics

• Katja Beha,
• Helmut Fedder,
• Marco Wolfer,
• Merle C. Becker,
• Petr Siyushev,
• Mohammad Jamali,
• Anton Batalov,
• Christopher Hinz,
• Jakob Hees,
• Lutz Kirste,
• Harald Obloh,
• Etienne Gheeraert,
• Boris Naydenov,
• Ingmar Jakobi,
• Florian Dolde,
• Sébastien Pezzagna,
• Daniel Twittchen,
• Matthew Markham,
• Daniel Dregely,
• Harald Giessen,
• Jan Meijer,
• Fedor Jelezko,
• Christoph E. Nebel,
• Rudolf Bratschitsch,
• Alfred Leitenstorfer and
• Jörg Wrachtrup

Beilstein J. Nanotechnol. 2012, 3, 895–908, doi:10.3762/bjnano.3.100

• ” (SRIM) package implements such simulations [5]. Figure 1b shows the simulated ion traces achieved with the high-aspect-ratio mica mask. The simulations confirm that the spatial accuracy of the implantation is limited by straggle to about 100 nm. Figure 2a shows a high-resolution optical microscope image

• bombardment with 1.6 GeV samarium ions. The channels appear as dark parallelograms. The inset shows the dimensions of an individual ion channel. (b) SRIM simulation of the ion implantation process through the mica mask. The thickness of the mica mask is chosen in the range 5–20 μm, such that the nitrogen ions

Pure hydrogen low-temperature plasma exposure of HOPG and graphene: Graphane formation?

• Baran Eren,
• Dorothée Hug,
• Laurent Marot,
• Rémy Pawlak,
• Marcin Kisiel,
• Roland Steiner,
• Dominik M. Zumbühl and
• Ernst Meyer

Beilstein J. Nanotechnol. 2012, 3, 852–859, doi:10.3762/bjnano.3.96

• deeper into the first 4–5 layers of HOPG, suggested by the SRIM simulations [11]. The question is: Will graphane form after the plasma exposure and if it does, is it possible to distinguish its existence from other possible surface rearrangements caused by the exposure? Before starting, it should be

Nano-structuring, surface and bulk modification with a focused helium ion beam

• Daniel Fox,
• Yanhui Chen,
• Colm C. Faulkner and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2012, 3, 579–585, doi:10.3762/bjnano.3.67

• feature is approximately at the implantation depth of 35 keV helium ions in silicon, about 318 nm (SRIM) [26]. This is made clear by the SRIM simulation image inset in Figure 4d showing the distribution of 35 keV helium ions in silicon; this simulation has the same scale as the image and correlates well

• face of the sample at an angle of 15°. (c) Bright field TEM image of the area modified by helium ions. (d) HAADF image of the modified area. “I” shows the location of the wedge shape and “II” shows the circular area with bubbles. Inset is a SRIM simulation of 35 keV helium ions in silicon with the same

Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism

• Gregor Hlawacek,
• Vasilisa Veligura,
• Stefan Lorbek,
• Tijs F. Mocking,
• Antony George,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2012, 3, 507–512, doi:10.3762/bjnano.3.58

• unit-cell size, the positions of the carbon adatoms were different in these eight channels. To average over many possible configurations for the overlayer atoms, the adlayer was shifted across 25 different positions relative to the bulk. SRIM [11] calculations to obtain measures for the backscatter

• probability and the range of the helium particles were performed with SRIM-2008 and the quick Kinchin–Pease formalism [11][12]. To ensure a sound statistical result 1 × 105 He ions of the selected energy were traced in appropriately thick slabs of the bulk material. Results Thin organic layers In Figure 1 HIM

• . To underline the above statement, SRIM calculations were used to obtain a generic view of the expected processes. Artificial silicon samples with a thickness of 1 μm and a 10 nm adlayer of either heavy (Pb) or light (Li) elements, and without an adlayer were compared. 1 × 105 He+ ions with a PE of 35

Channeling in helium ion microscopy: Mapping of crystal orientation

• Vasilisa Veligura,
• Gregor Hlawacek,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2012, 3, 501–506, doi:10.3762/bjnano.3.57

• into the vacuum chamber. In addition the samples were cleaned for 15 min in the load lock by using a 10 W air plasma. SRIM-2011 [5] was used to assess the damage caused by the swift helium atoms. The Monte Carlo code was setup to track the full damage cascade and 1 × 106 ions were used. To obtain a

• for this is rooted in the low number of ions used per pixel. In the present case only 2375 ions are used per pixel, of which roughly 20% are backscattered, according to SRIM calculations. However, not all of these 500 ions will be counted by the detector. Different to the SE images, BSHe images

• sample areas and therefore not affect the SE images directly. Using SRIM [5] and a PE of 15 keV into gold, we calculate that 49 vacancies are generated per ion. After a fluence of 4.9 × 1014 cm−2, necessary to record one image, the defect density at a depth of 3 nm is 4% for the 0 K SRIM simulation. If

Preparation and characterization of supported magnetic nanoparticles prepared by reverse micelles

• Ulf Wiedwald,
• Luyang Han,
• Johannes Biskupek,
• Ute Kaiser and
• Paul Ziemann

Beilstein J. Nanotechnol. 2010, 1, 24–47, doi:10.3762/bjnano.1.5