Current–voltage characteristics of manganite–titanite perovskite junctions

• Benedikt Ifland,
• Patrick Peretzki,
• Birte Kressdorf,
• Philipp Saring,
• Andreas Kelling,
• Michael Seibt and
• Christian Jooss

Beilstein J. Nanotechnol. 2015, 6, 1467–1484, doi:10.3762/bjnano.6.152

• current. This can be discussed according to Figure 10, where the expected simplified band diagram of the manganite–titanate junction is shown for electro-chemical equilibrium and with applied voltage in both forward and reverse directions. We disregard here all changes of the electronic structure of the

• interface. Previous studies of a PCMO–STNO junction show the rectifying character of the J–V curve can predict a p–n diode-type band diagram for this type of junction [64]. In contrast to our study, a lower doping level of Nb (y = 0.0002) was used, which leads to a more extended space charge region in the

Effects of swift heavy ion irradiation on structural, optical and photocatalytic properties of ZnO–CuO nanocomposites prepared by carbothermal evaporation method

• Sini Kuriakose,
• D. K. Avasthi and
• Satyabrata Mohapatra

Beilstein J. Nanotechnol. 2015, 6, 928–937, doi:10.3762/bjnano.6.96

• tests using 3 × 1013 ions/cm2 irradiated sample for two runs of photocatalytic degradation studies on MO dye. Schematic energy band diagram of ZnO–CuO nanocomposite showing the charge transportation processes leading to sun-light-driven photocatalytic degradation of dye. Acknowledgements The authors

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

• Vinay Kabra,
• Lubna Aamir and
• M. M. Malik

Beilstein J. Nanotechnol. 2014, 5, 2216–2221, doi:10.3762/bjnano.5.230

• . Energy band diagram and carrier transport The energy band diagram of the p-ZnO/n-Si nano heterojunction diode is depicted in Figure 4. The band gap of n-Si is 1.1 eV [9][10] and p-ZnO is 3.37 eV and the electron affinity of p-ZnO (χp) and n-Si (χn) is 4.35 eV and 4.05 eV, respectively [8]. The energy

• band diagram shows a small conduction band offset of 0.3 eV as calculated by ΔEc = q(χp − χn) and a large valance band offset 1.97 eV calculated by ΔEv = ΔEg − ΔEc. There is a diffusion of electrons from n-Si to p-ZnO and a diffusion of holes from p-ZnO to n-Si. At low, forward voltage, the current is

• used for the capacitance–voltage (C–V) measurements of the iode. XRD pattern of p-ZnO nanoparticles. (a) I–V characteristics of the diode under dark and UV illumination and (b) lnI vs V curve under dark and UV illumination. 1/C2 versus voltage curve of the nano heterojunction diode. Band diagram of a p

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• permission from (a) [14] copyright 2000 American Physical Society, (b) [15] copyright 2005 American Chemical Society. The energy band diagram of a CNFET. a) The band bending effect at the metal–SWCNT interface for a metal with a low work function. A positive voltage bias is applied between drain–source

Enhanced photocatalytic activity of Ag–ZnO hybrid plasmonic nanostructures prepared by a facile wet chemical method

• Sini Kuriakose,
• Vandana Choudhary,
• Biswarup Satpati and
• Satyabrata Mohapatra

Beilstein J. Nanotechnol. 2014, 5, 639–650, doi:10.3762/bjnano.5.75

• +]/[citrate] ratio of 1: 10, as photocatalysts. Schematic band diagram of Ag–ZnO hybrid nanostructure showing the charge redistribution processes that lead to the photocatalytic degradation of MB dye. (a,b) Kinetics of MB photodegradation by Ag–ZnO hybrid plasmonic nanostructures with different Ag

Kelvin probe force microscopy of nanocrystalline TiO₂ photoelectrodes

• Alex Henning,
• Gino Günzburger,
• Res Jöhr,
• Yossi Rosenwaks,
• Biljana Bozic-Weber,
• Catherine E. Housecroft,
• Edwin C. Constable,
• Ernst Meyer and
• Thilo Glatzel

Beilstein J. Nanotechnol. 2013, 4, 418–428, doi:10.3762/bjnano.4.49

• -potential detection method that determines the contact potential difference (CPD) during scanning by compensating the electrostatic forces between a microscopic tip and the sample [34]. Figure 2a illustrates a schematic band diagram for a KPFM tip in close proximity to a semiconductor sample surface with

• the dye molecule, which donates electrons under illumination and hence changes the surface potential. To our best knowledge, the measured SPV is not understood well enough to represent it generally in a band diagram without making major assumptions. Further studies are needed to clarify this point

• electrons are injected from the adsorbed dye molecules into the conduction band, Ecb, of the wide-bandgap metal oxide (nanoporous TiO2) resulting in an open-circuit voltage, Voc. Schematic band diagram for a KPFM tip in close proximity to an n-type semiconductor surface (a) in the dark and (b) under

Influence of diffusion on space-charge-limited current measurements in organic semiconductors

• Thomas Kirchartz

Beilstein J. Nanotechnol. 2013, 4, 180–188, doi:10.3762/bjnano.4.18

• light red background in the band diagram in Figure 1c. The traps are essentially always below the quasi Fermi levels for electrons and holes and will therefore be occupied with electrons. The space charge of the electrons on the traps creates an electrostatic barrier (highlighted in red) close to the

• equations. (a) Current–voltage curves of a device with and without charged acceptor-like defects with a total concentration NT = 1017 cm−3 and a Gaussian width of σ = 100 meV are compared to the Mott–Gurney law (Equation 1). Band diagram of the device (b) without charged defects and (c) with charged defects

• V (as in Figure 1a) and a device with no defects but a built-in voltage Vbi = 1 V are compared to the Mott–Gurney law (Equation 1). Band diagram of the device (b) without charged defects and Vbi = 1 V and (c) with charged defects and Vbi = 0 V. Both band diagrams are depicted at short circuit

Highly efficient ZnO/Au Schottky barrier dye-sensitized solar cells: Role of gold nanoparticles on the charge-transfer process

• Tanujjal Bora,
• Htet H. Kyaw,
• Soumik Sarkar,
• Samir K. Pal and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2011, 2, 681–690, doi:10.3762/bjnano.2.73

• ZnO/Au-nanocomposite photoelectrodes. The optical absorption was measured by removing the dye molecules from the respective photoelectrodes (size = 1 cm2) by dipping them in a 0.1 mM KOH aqueous solution (2 mL) for 5 min. Energy-band diagram depicting the possible electron-transfer path in the ZnO/Au