Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• contact on the p-type Si substrate. Figure 9 and Figure 10 compare the current–voltage characteristics of p-Si/n-Zn1−xMgxO heterojunctions for two films deposited by spin coating with x values of 0.10 (Figure 9) and 0.40 (Figure 10). One can see from Figure 9b and Figure 10b that in both cases the current

• , the investigated heterojunctions work as photodetectors at forward bias, while a classical p–n junction should function as a photodetector at reverse bias. Since the current–voltage characteristics are fit to straight lines in the log–log coordinates, it means that they correspond to a power function

• heterojunction with a Zn0.6Mg0.4O film, the current–voltage characteristics fit to the MG law both in the dark and under illumination (see Figure 10c). These observations suggest that the investigated heterojunctions work at forward bias as injection photodiodes [53][54]. A more detailed investigation of

A Josephson junction based on a highly disordered superconductor/low-resistivity normal metal bilayer

• Pavel M. Marychev and
• Denis Yu. Vodolazov

Beilstein J. Nanotechnol. 2020, 11, 858–865, doi:10.3762/bjnano.11.71

• of a single S layer at zero temperature). Our calculations show, that the proper choice of the thickness of the N layer leads both to nonhysteretic current–voltage characteristics even at low temperatures and a relatively large product IcRn. Keywords: normal metal–superconductor bilayer; Josephson

• in the current–voltage characteristics is important for devices based on Josephson junctions. The hysteresis in Dayem bridge, variable-thickness, S’-S-S’ or S-N-S junctions is mainly caused by the temperature rise in the weak-link region in the resistive state due to Joule heating and the formation

• voltage standards [1], where a large value of Vc allows for a reduction of the number of junctions and for the use of Shapiro steps of orders higher than one. Nonhysteretic current–voltage characteristics with large Vc at low temperatures allow for the use of these structures for various low-temperature

Anomalous current–voltage characteristics of SFIFS Josephson junctions with weak ferromagnetic interlayers

• Tairzhan Karabassov,
• Anastasia V. Guravova,
• Aleksei Yu. Kuzin,
• Elena A. Kazakova,
• Shiro Kawabata,
• Boris G. Lvov and
• Andrey S. Vasenko

Beilstein J. Nanotechnol. 2020, 11, 252–262, doi:10.3762/bjnano.11.19

• Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia 10.3762/bjnano.11.19 Abstract We present a quantitative study of the current–voltage characteristics (CVC) of SFIFS Josephson junctions (S = bulk superconductor, F = metallic ferromagnet, I = insulating barrier) with weak ferromagnetic

• interlayers, which we attribute to DOS energy dependencies in the case of small exchange fields in the F layers. Keywords: current–voltage characteristics; Josephson junctions; proximity effect, superconductivity; superconductor/ferromagnet hybrid nanostructures; Introduction It is well known that

• attention and have been extensively studied both experimentally [32][33][34][35][36][37][38][39][40][41] and theoretically [23][45][76][77][78][79][80]. For instance, the current–voltage characteristics (CVC) of SIFS Josephson junctions with a strong insulating layer were studied in [45]. They exhibit

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

• Wanli Yang,
• Shuaiqi Fan,
• Yuxing Liang and
• Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

Molecular attachment to a microscope tip: inelastic tunneling, Kondo screening, and thermopower

• Rouzhaji Tuerhong,
• Mauro Boero and
• Jean-Pierre Bucher

Beilstein J. Nanotechnol. 2019, 10, 1243–1250, doi:10.3762/bjnano.10.124

• tunneling through excitation of molecular vibration modes. Parameter-dependent transport in a molecular junction In order to gain additional information about the kinetics of carriers not contained in the current–voltage characteristics we want to evaluate the impact of the zero-bias peak on the thermopower

Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• current–voltage characteristics of an orthorhombic LMO device. After a forming step, reproducible and reversible clockwise bipolar RS response was attained. The “set” and “reset” values were around −0.7 V and +0.6 V, respectively, which are considerably lower than those reported for epitaxial LMO (−1.5 V

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• vacuum mask with a 3 mm × 3 mm aperture area, was used to measure the current–voltage characteristics of the fabricated solar cells. The simulator consists of a xenon and a halogen lamp that closely reproduce the spectrum and the intensity of the AM1.5 spectrum [43], which was verified with a c-Si device

Amorphous Ni_xCo_yP-supported TiO₂ nanotube arrays as an efficient hydrogen evolution reaction electrocatalyst in acidic solution

• Yong Li,
• Peng Yang,
• Bin Wang and
• Zhongqing Liu

Beilstein J. Nanotechnol. 2019, 10, 62–70, doi:10.3762/bjnano.10.6

• spectra of the samples. (a) Current–voltage characteristic plots and (b) Tafel plots of the samples. (c) Current–voltage characteristics during durability tests and (d) bath voltages at various current densities for the two-electrode system with NixCoyP/TNAs as a cathode. Cyclic voltammograms of (a) TNAs

Contactless photomagnetoelectric investigations of 2D semiconductors

• Marian Nowak,
• Marcin Jesionek,
• Barbara Solecka,
• Piotr Szperlich,
• Piotr Duka and
• Anna Starczewska

Beilstein J. Nanotechnol. 2018, 9, 2741–2749, doi:10.3762/bjnano.9.256

• electrostatically tunable carrier density, a 150 nm thick Au film was also deposited on the back surface of the PET foil. The current–voltage characteristics were recorded using a Keithley 6221 DC current source, Keithley 196 digital multimeter, and a Keithley 705 scanner. The measurements were carried out in

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• samples demonstrated linear current–voltage characteristics down to sub-helium temperatures while sustaining high values of conductivity. The cross-section specimens for S/TEM studies were prepared by focus ion beam (FIB) milling in a Helios (FEI, US) SEM/FIB dual-beam system equipped with C and Pt gas

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

Synthesis and characterization of two new TiO₂-containing benzothiazole-based imine composites for organic device applications

• Anna Różycka,
• Agnieszka Iwan,
• Krzysztof Artur Bogdanowicz,
• Michal Filapek,
• Natalia Górska,
• Damian Pociecha,
• Marek Malinowski,
• Patryk Fryń,
• Agnieszka Hreniak,
• Jakub Rysz,
• Paweł Dąbczyński and
• Monika Marzec

Beilstein J. Nanotechnol. 2018, 9, 721–739, doi:10.3762/bjnano.9.67

• architecture of the device is more likely to be used as a photodiode (I–V characteristics at first (I) and third (III) part of spectrum) than for solar cells (small effect under illumination at fourth (IV) part of current–voltage characteristics). However, additional work is required to improve the electrical

Inelastic electron tunneling spectroscopy of difurylethene-based photochromic single-molecule junctions

• Youngsang Kim,
• Safa G. Bahoosh,
• Dmytro Sysoiev,
• Thomas Huhn,
• Fabian Pauly and
• Elke Scheer

Beilstein J. Nanotechnol. 2017, 8, 2606–2614, doi:10.3762/bjnano.8.261

• current–voltage characteristics based on the two-parameter single-level model, where E0 specifies the position of an effective level with regard to the Fermi energy and Γ is the level broadening. Although the E0 values in the experiments are clearly smaller than the theoretically predicted differences of

• spectra for the two different forms of C5F-ThM molecular junctions and compared them with computed IET spectra, as shown in Figure 3. The excitations of molecular vibrations appear as peaks in the second derivative of current–voltage characteristics (in the positive bias regime) and can be detected using

Spin-dependent transport and functional design in organic ferromagnetic devices

• Guichao Hu,
• Shijie Xie,
• Chuankui Wang and
• Carsten Timm

Beilstein J. Nanotechnol. 2017, 8, 1919–1931, doi:10.3762/bjnano.8.192

• labeled as C1 (↑↑↑), C2 (↓↑↓), C3 (↑↑↓), and C4 (↓↑↑) and are illustrated in Figure 5c. The current–voltage characteristics for the four magnetization configurations are shown in Figure 6. It is found that the threshold voltage and the maximum magnitude of the current strongly depend on the magnetization

• [32] has been reviewed. Considering the possible orientations of the magnetization in each component, four distinct magnetic configurations of the device were proposed and the transport in each case were investigated. By calculating the current–voltage characteristics, it was found that the current

• , and increase the interest in the design of organic spintronic devices with OFs. Schematic of an organic ferromagnetic device. (a) Current–voltage characteristics for a OF device with N = 20 carbon sites. (b) Spin polarization of the current as a function of bias. Reproduced with permission from [31

Transport characteristics of a silicene nanoribbon on Ag(110)

• Ryoichi Hiraoka,
• Chun-Liang Lin,
• Kotaro Nakamura,
• Ryo Nagao,
• Maki Kawai,
• Ryuichi Arafune and
• Noriaki Takagi

Beilstein J. Nanotechnol. 2017, 8, 1699–1704, doi:10.3762/bjnano.8.170

• silicene is to reduce the interfacial coupling. Recently, Tao et al. [24] successfully fabricated a silicene field effect transistor by peeling off the (2√3×2√3)R30° silicene from the Ag substrate and demonstrated the current–voltage characteristics supporting the survival of Dirac fermions. This study

Parylene C as a versatile dielectric material for organic field-effect transistors

• Tomasz Marszalek,
• Maciej Gazicki-Lipman and
• Jacek Ulanski

Beilstein J. Nanotechnol. 2017, 8, 1532–1545, doi:10.3762/bjnano.8.155

• alteration of the current–voltage characteristics before and after an application of a passivation layer was recorded [67]. Because of the specific properties of the parylene deposition procedure taking place at room temperature, no changes in the semiconducting channel were induced and the device fabricated

Charge transport in organic nanocrystal diodes based on rolled-up robust nanomembrane contacts

• Vineeth Kumar Bandari,
• Lakshmi Varadharajan,
• Longqian Xu,
• Abdur Rehman Jalil,
• Mirunalini Devarajulu,
• Pablo F. Siles,
• Feng Zhu and
• Oliver G. Schmidt

Beilstein J. Nanotechnol. 2017, 8, 1277–1282, doi:10.3762/bjnano.8.129

• shown in Figure 3a. Similar to the current–voltage characteristics at room temperature, the current under forward bias remains dominant also at lower temperatures. By plotting the temperature dependent current behavior (ln(I)–1000/T) under different bias we obtain two distinct regions with different

• –voltage characteristics of Au/F16CuPc/VOPc/F16CuPc/Au diode as a function of temperature. (b) Current–temperature characteristics at different voltages. (c) Applied voltage dependence of thermal activation energy. Acknowledgements The authors acknowledge Paul Plocica and Eric Pankenin for their technical

• . (e) AFM topography image of the F16CuPc/VOPc/F16CuPc nanostructures. (a) I–V characteristics of three kinds of nanopyramid structures: pure VOPc (black), F16CuPc/VOPc (red) and F16CuPc/VOPc/F16CuPc (blue), (b) ln(I)–ln(V) plot showing the transition of transport regimes from ohmic to SCL. (a) Current

Performance of natural-dye-sensitized solar cells by ZnO nanorod and nanowall enhanced photoelectrodes

• Saif Saadaoui,
• Mohamed Aziz Ben Youssef,
• Moufida Ben Karoui,
• Rached Gharbi,
• Emanuele Smecca,
• Vincenzina Strano,
• Salvo Mirabella,
• Alessandra Alberti and
• Rosaria A. Puglisi

Beilstein J. Nanotechnol. 2017, 8, 287–295, doi:10.3762/bjnano.8.31

• electrolyte (SOLARONIX). The used henna and mallow powders were prepared in-house by drying henna and mallow plants. Afterwards, the dried plants were milled and sieved to obtain the final powder. Current–voltage characteristics and layer conductivity were measured using a computer-controlled Keithley 4200

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• quantum dots into the continuum of the conduction band. However, photoluminescence can only provide information about the energy levels in quantum dots but not about the transport mechanisms. For this purpose, we examined dark current–voltage characteristics of the samples with different doping levels. It

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality

• current–voltage characteristics, which can be used as the sensor signal. The shift of the I–V curves can be calibrated to measure the concentration of heavy metals. It is important to emphasize that the key factors determining the performance of the graphene-based Schottky barrier diode as sensing

• to extract the Schottky barrier height value, ideality factor, saturation current and series resistance. In addition, we investigated the electrical properties of the fabricated structure in the simple-resistor regime. In other words, we measured the current–voltage characteristics of the graphene

Role of solvents in the electronic transport properties of single-molecule junctions

• Katharina Luka-Guth,
• Sebastian Hambsch,
• Andreas Bloch,
• Philipp Ehrenreich,
• Bernd Michael Briechle,
• Filip Kilibarda,
• Torsten Sendler,
• Dmytro Sysoiev,
• Thomas Huhn,
• Artur Erbe and
• Elke Scheer

Beilstein J. Nanotechnol. 2016, 7, 1055–1067, doi:10.3762/bjnano.7.99

• width, conductance histograms as well as current–voltage characteristics of narrow gaps and discuss them in terms of the Simmons model, which is the standard model for describing transport via tunnel barriers, and the resonant single-level model, often applied to single-molecule junctions. One of our

• conclusions is that stable junctions may form from solvents as well and that both conductance–distance traces and current–voltage characteristics have to be studied to distinguish between contacts of solvent molecules and of molecules under study. Keywords: electrochemical environment; mechanically

• different solvents. Density plots of current–voltage characteristics of all investigated solvents. The right column gives a close up for the small current region. The colour code is normalized. The total numbers of curves are: Mes 107, TCB 70, Tol 173, Tol/THF 180, EtOH 372, IPA 55. Note different scales

Charge injection and transport properties of an organic light-emitting diode

• Peter Juhasz,
• Juraj Nevrela,
• Michal Micjan,
• Miroslav Novota,
• Jan Uhrik,
• Lubica Stuchlikova,
• Jan Jakabovic,
• Ladislav Harmatha and
• Martin Weis

Beilstein J. Nanotechnol. 2016, 7, 47–52, doi:10.3762/bjnano.7.5

• steady-state current–voltage characteristics recorded at various temperatures have been used to evaluate the activation energy of electric conductivity. Obtained results are compared with energy band diagram to identify major energy barriers limiting the current. Experimental The study of the charge

• localized states, while at high voltages is dominant thermionic injection. (a) Schematic diagram of the device ITO/α-NPD/Alq3/Al. Steady-state current–voltage characteristics (b) in linear scale, the inset shows current density–voltage characteristic and electroluminescence–voltage characteristic at 300 K

• –voltage characteristics have been recorded using an Agilent Semiconductor Parameter Analyzer 4155C in the voltage range from −0.5 to 10 V. The frequency measurements have been carried out by the MODULAB MTS system with offset from −0.5 to 8 V with the probe signal AC amplitude of 10 mV. The impedance

Chemiresistive/SERS dual sensor based on densely packed gold nanoparticles

• Sanda Boca,
• Cosmin Leordean,
• Simion Astilean and
• Cosmin Farcau

Beilstein J. Nanotechnol. 2015, 6, 2498–2503, doi:10.3762/bjnano.6.259

• chemiresistor surface before and after exposure to MBA. Supporting Information Supporting Information provides optical extinction and DLS characterization of the gold colloid, current–voltage characteristics of the gold nanoparticle strips, and SERS of MBA on AuFoN substrate. Supporting Information File 136

Probing the local environment of a single OPE3 molecule using inelastic tunneling electron spectroscopy

• Riccardo Frisenda,
• Mickael L. Perrin and
• Herre S. J. van der Zant

Beilstein J. Nanotechnol. 2015, 6, 2477–2484, doi:10.3762/bjnano.6.257

• electrodes when describing inelastic contributions to transport through single-molecule junctions. Keywords: current–voltage characteristics; DFT calculations; mechanically controllable break junction (MCBJ); molecule–electrode interaction; vibrational modes; Introduction Vibrational degrees of freedom in

High electronic couplings of single mesitylene molecular junctions

• Yuki Komoto,
• Shintaro Fujii,
• Tomoaki Nishino and
• Manabu Kiguchi

Beilstein J. Nanotechnol. 2015, 6, 2431–2437, doi:10.3762/bjnano.6.251

• transport properties of single mesitylene (1,3,5-trimethylbenzene) molecular junctions. The electronic conductance and the current–voltage characteristics of mesitylene molecules wired into Au electrodes were measured by a scanning tunnelling microscopy-based break-junction method at room temperature in a

• liquid environment. We found the molecular junctions exhibited two distinct conductance states with high conductance values of ca. 10−1G0 and of more than 10−3G0 (G0 = 2e2/h) in the electronic conductance measurements. We further performed a statistical analysis of the current–voltage characteristics of

• the molecular junctions in the two states. Within a single channel resonant tunnelling model, we obtained electronic couplings in the molecular junctions by fitting the current–voltage characteristics to the single channel model. The origin of the high conductance was attributed to experimentally