Friction reduction through biologically inspired scale-like laser surface textures

• Johannes Schneider,
• Vergil Djamiykov and
• Christian Greiner

Beilstein J. Nanotechnol. 2018, 9, 2561–2572, doi:10.3762/bjnano.9.238

• dislocation activity under a tribological load [8]. The microstructure under the contact therefore undergoes drastic and complex changes during sliding, which in themselves strongly depend on the nature of the tribological loading conditions [52]. We have studied such phenomena in detail recently with high

Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

• Nan Guan,
• Andrey Babichev,
• Martin Foldyna,
• Dmitry Denisov,
• François H. Julien and
• Maria Tchernycheva

Beilstein J. Nanotechnol. 2018, 9, 2248–2254, doi:10.3762/bjnano.9.209

• tunable bandgap [14] and reduced dislocation density [15][16], nitride nanowires (NWs) have become important materials for optical components in the visible to ultraviolet (UV) spectral range [17][18]. Despite their small size, single NW light emitting diodes (LEDs) can produce bright electroluminescence

The inhibition effect of water on the purification of natural gas with nanoporous graphene membranes

• Krzysztof Nieszporek,
• Tomasz Pańczyk and
• Jolanta Nieszporek

Beilstein J. Nanotechnol. 2018, 9, 1906–1916, doi:10.3762/bjnano.9.182

• was maintained at 300 K using velocity rescaling with a stochastic term [19] and a time constant of 0.1 ps. In order to enable possible deformations, the graphene sheets were flexible; to avoid vertical dislocation due to collisions with separated gases, the carbon atoms in each graphene corner were

Toward the use of CVD-grown MoS₂ nanosheets as field-emission source

• Geetanjali Deokar,
• Nitul S. Rajput,
• Junjie Li,
• Francis Leonard Deepak,
• Wei Ou-Yang,
• Nicolas Reckinger,
• Carla Bittencourt,
• Jean-Francois Colomer and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2018, 9, 1686–1694, doi:10.3762/bjnano.9.160

• nm Mo film at 850 °C on SiO2/Si substrates: (a) HAADF-STEM image at low magnification with different observed materials layers marked; (b) TEM image at the interface between the MoS2 NSs and the Pt layer; (c) higher magnification of layer A showing edge dislocation (marked with “T”) in the MoS2

Friction force microscopy of tribochemistry and interfacial ageing for the SiO_x/Si/Au system

• Christiane Petzold,
• Marcus Koch and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2018, 9, 1647–1658, doi:10.3762/bjnano.9.157

• ageing have been identified, e.g., material creep [5], structural changes in the interfacial contact [6][7] or an increase in number of chemical bonds [8][9]. The frictional strength may also grow in time by rotation of the contacting surfaces into a preferred misorientation defined by dislocation

Fatigue crack growth characteristics of Fe and Ni under cyclic loading using a quasi-continuum method

• Ren-Zheng Qiu,
• Yi-Chen Lin and
• Te-Hua Fang

Beilstein J. Nanotechnol. 2018, 9, 1000–1014, doi:10.3762/bjnano.9.93

• at any orientation, the slip dislocation observed in the materials considerably affects the release of stress. Keywords: dislocations; fatigue crack growth; materials treatment effects; mechanics; shear stress; Introduction When materials undergo cyclic loading, the growth of cracks in the material

• . Zhang et al. have examined the effect of the phase boundary on the fatigue crack propagation in an α/β-iron biphasic system under cyclic tensile loading [13]. They found that the nucleation of new cracks typically appears at the phase boundary because of dislocation pile-ups. However, most of these

• crack tip was observed, which released the internal stress. Moreover, with increasing shear distance to the point b shown in Figure 14b, another slip was generated along the [110] orientation. The length of the second slip dislocation extended to the same length as the first one. When the first shear

Cyclodextrin inhibits zinc corrosion by destabilizing point defect formation in the oxide layer

• Abdulrahman Altin,
• Maciej Krzywiecki,
• Adnan Sarfraz,
• Cigdem Toparli,
• Claudius Laska,
• Philipp Kerger,
• Aleksandar Zeradjanin,
• Karl J. J. Mayrhofer,
• Michael Rohwerder and
• Andreas Erbe

Beilstein J. Nanotechnol. 2018, 9, 936–944, doi:10.3762/bjnano.9.86

• observed in the O 1s region for both components. The ZnO related components shift by ≈0.90 eV, almost twice as much as those of the Zn 2p and 3d levels. The β-CD related C 1s level shift is only 0.20 eV. Energy level shift is a sign of charge dislocation across the β-CD/ZnO interface. (As explained above

• , defect levels affect the VBonset and VBmax energy positions differently, consequently altering the density of states in the VB region. Altered density of states leads to different charge carrier densities at the interface and a decrease in potential barrier for charge dislocation.) From the magnitude of

• the energy level shift, oxygen must be the main center for the charge dislocation. It is highly probable that charge is drained from the n-type ZnO layer towards the β-CD layer, which consequently behaves like a p-type system in this situation. This conclusion is supported by He II UPS, showing EF

Blister formation during graphite surface oxidation by Hummers’ method

• Olga V. Sinitsyna,
• Georgy B. Meshkov,
• Anastasija V. Grigorieva,
• Alexander A. Antonov,
• Inna G. Grigorieva and
• Igor V. Yaminsky

Beilstein J. Nanotechnol. 2018, 9, 407–414, doi:10.3762/bjnano.9.40

• dislocations with Burgers vector perpendicular to the basal plane. In the second case, atomic steps are located mainly below the surface. The deeper an atomic step lies, the smoother the relief on the surface. In our AFM experiments, we observed surface height changes for the dislocation lines located at a

• HAPG surface after cleavage contains significantly less defects in the ordered areas than HOPG with mosaic spread of 0.8° (Figure 3a,b). Thus, the length of the cleavage steps per square micrometer in HAPG is 0.2–0.3 μm−1, and the length of the dislocation lines per square micrometer is about 0.2 μm−1

• . The lengths of the cleavage steps and the dislocation lines for HOPG are 1–3 μm−1 and about 1 μm−1, respectively. The height of the cleavage steps is usually less than 1 nm (1–3 carbon layers) for both types of graphite. Sometimes a cleavage step ends in the center of an atomic terrace, indicating the

Liquid-crystalline nanoarchitectures for tissue engineering

• Baeckkyoung Sung and
• Min-Ho Kim

Beilstein J. Nanotechnol. 2018, 9, 205–215, doi:10.3762/bjnano.9.22

• -compatible subcutaneous implant [108]. Synthetic substrates, membranes, and dispersions in other LC geometries Smectic-like and columnar-like architectures can be also adopted as nanostructures for tissue engineering and regenerative medicine. Lamellar templates in the smectic phase with spiral dislocation

• -layer erosion can be utilized as a repeated delivery mechanism of drug molecules to the adhered cells on the interface. However, the biophysical interaction between the adhered cells and the nanotopography of the spiral dislocation structure remains to be revealed. Viscoelastic strings of lamellar

Molecular dynamics simulations of nanoindentation and scratch in Cu grain boundaries

• Shih-Wei Liang,
• Ren-Zheng Qiu and
• Te-Hua Fang

Beilstein J. Nanotechnol. 2017, 8, 2283–2295, doi:10.3762/bjnano.8.228

• ] techniques have been used to measure the mechanical properties and wear resistance of materials with the aim to design nanoscale devices. On a microscopic level, the dislocation phenomenon of the internal material affects its structure. However, the observation of this slight change in the internal structure

• of the material along with the complex dislocation phenomenon of the grain boundary is unclear at the macroscopic scale. In the past few years, many researchers have used numerical simulation analysis to discuss the mechanical properties of metals [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17

• and adhesion when a probe touches the substrate) between Ni (probe) and Au (thin film substrate) under nanoindentation conditions using MD simulations. Moreover, Mulliah et al. [18] analyzed the friction coefficient, the dislocation, and related parameters of the nanostructure under nanoscratch

Nanotribological behavior of deep cryogenically treated martensitic stainless steel

• Germán Prieto,
• Konstantinos D. Bakoglidis,
• Walter R. Tuckart and
• Esteban Broitman

Beilstein J. Nanotechnol. 2017, 8, 1760–1768, doi:10.3762/bjnano.8.177

• carbon in the martensitic matrix. In addition, cryogenic treatments also increase residual stresses in the martensitic matrix, as we were able to measure in our previous work using X-ray diffractometry [10]. These residual stresses can be associated to a higher dislocation density, which in turn has been

Investigation of growth dynamics of carbon nanotubes

• Marianna V. Kharlamova

Beilstein J. Nanotechnol. 2017, 8, 826–856, doi:10.3762/bjnano.8.85

• is favored. In [128], on the basis of the dislocation growth mechanism, it was shown that the abundance of near-armchair nanotubes in the synthesized samples is caused by their higher growth rates as compared to near-zigzag tubes. This trend was proven by several experimental studies [129][130

Diffusion and surface alloying of gradient nanostructured metals

• Zhenbo Wang and
• Ke Lu

Beilstein J. Nanotechnol. 2017, 8, 547–560, doi:10.3762/bjnano.8.59

• channels from conventional GBs, the term “nonequilibrium” GBs was used. In this case, GBs might gather a large number of irregular (extrinsic) dislocation structures, so that extra free energy might be introduced in the interfaces, while misorientations across them remain stable [22][23]. The existence of

• -angle GBs (HAGBs), low-angle GBs (LAGBs) and dislocation walls with an increasing depth. These microstructures characteristics provided unique opportunities to study the relationship between the diffusion property and microstructure into the nanometer scale. The diffusion studies in these materials will

• , the grain size increases and interface structure is sequentially dominated by TBs (or TB-like interfaces), HAGBs, LAGBs and dislocation walls with increasing depth in the GNS surface layer on a SMAT pure Cu sample [30][38]. Similar to the accelerated diffusion of Cr observed in GNS Fe and steels, a

Formation and shape-control of hierarchical cobalt nanostructures using quaternary ammonium salts in aqueous media

• Ruchi Deshmukh,
• Anurag Mehra and
• Rochish Thaokar

Beilstein J. Nanotechnol. 2017, 8, 494–505, doi:10.3762/bjnano.8.53

• mechanism, based on hydroxide ion-assisted nanocone formation, has been reported [26], wherein the growth of the nanocones is initiated by a screw dislocation present on the copper substrate. Also, chains composed of microplates [27] have been formed by using mixed solvents such as ethylene glycol and

Annealing-induced recovery of indents in thin Au(Fe) bilayer films

• Anna Kosinova,
• Ruth Schwaiger,
• Leonid Klinger and
• Eugen Rabkin

Beilstein J. Nanotechnol. 2016, 7, 2088–2099, doi:10.3762/bjnano.7.199

• dissipation and the formation of shallow depressions nearby after subsequent annealing treatments. This annealing-induced evolution of nanoindents was interpreted in terms of annihilation of dislocation loops generated during indentation, accompanied by the formation of nanopores at the grain boundaries and

• their subsequent dissolution. The application of the processes uncovered in this work show great potential for the patterning of thin films. Keywords: annealing; diffusion; dislocation loops; nanoindenation; thin films; Introduction The intentional introduction of defects into bulk metallic material

• defies the condition of mass conservation. In what follows, we will discuss the possible mechanisms of indent→hillock→depression transformations. This chain of relaxation processes is a result of a complex, synergetic interplay of different types of defects, including dislocation loops, grain boundaries

A new approach to grain boundary engineering for nanocrystalline materials

• Shigeaki Kobayashi,
• Sadahiro Tsurekawa and
• Tadao Watanabe

Beilstein J. Nanotechnol. 2016, 7, 1829–1849, doi:10.3762/bjnano.7.176

• than that of the Type B specimen (HV = 367), because the degree of grain boundary hardening at low-Σ CSL boundaries is lower than that at random boundaries, as discussed in the previous section. This suggests that there exists some plasticity during the dislocation-boundary interaction. It is worth

• high-cycle fatigue may result from a rapid migration of low-angle boundaries involving some dislocation mechanisms and enhanced by segregated P atoms at finally resultant random boundaries along shear bands. The operating mechanism will be explained later in some detail. Figure 7 shows the

• boundaries under the condition of similar GB density. It is natural that low-angle boundaries with a larger misorientation angle must have a higher value of the electrical resistivity owing to increase of the volume of dislocation core scattering at these grain boundaries. This is because the space of

In situ observation of deformation processes in nanocrystalline face-centered cubic metals

• Aaron Kobler,
• Christian Brandl,
• Horst Hahn and
• Christian Kübel

Beilstein J. Nanotechnol. 2016, 7, 572–580, doi:10.3762/bjnano.7.50

• grain rotation. Large-angle grain rotations with ≈39° and ≈60° occur and can be related to twin formation, twin migration and twin–twin interaction as a result of partial dislocation activity. Furthermore, plastic deformation in nanocrystalline thin films was found to be partially reversible upon

• ] have been discussed (Figure 1a). Dislocation-mediated plasticity in the grain interior is reported to be based on dislocation nucleation at GBs, propagation and eventual absorption in the surrounding GB network, as well as twin nucleation, migration and detwinning (Figure 1a). Such twin activity and

• dislocation-driven grain rotation can still be attributed to dislocation formation, propagation and adsorption [13][22]. The understanding of the active deformation mechanisms is essential to support the application of NC metals, for example, in microelectrical mechanical systems (MEMS) [23], hydrogen storage

Determination of the compositions of the DIGM zone in nanocrystalline Ag/Au and Ag/Pd thin films by secondary neutral mass spectrometry

• Gábor Y. Molnár,
• Shenouda S. Shenouda,
• Gábor L. Katona,
• Gábor A. Langer and
• Dezső L. Beke

Beilstein J. Nanotechnol. 2016, 7, 474–483, doi:10.3762/bjnano.7.41

• dislocation (GBD) belonging to this step, respectively. Since the ratio DA/(DA – DB) is slightly higher than unity the role of the multiplying factor, α, is important in determining the composition. The ratio q = bn/ξ was estimated to be of the order of 0.1 in [4] and thus the experimental values on the

Plasticity-mediated collapse and recrystallization in hollow copper nanowires: a molecular dynamics simulation

• Amlan Dutta,
• Arup Kumar Raychaudhuri and
• Tanusri Saha-Dasgupta

Beilstein J. Nanotechnol. 2016, 7, 228–235, doi:10.3762/bjnano.7.21

• site would create a [112]/6-type dislocation and, thus, would add to the free-energy of the system. That is why most of the remaining disordered atoms are found at the terminating sites of the stacking-faults (cf. Figure 2a). Stage 3 The third and final stage of the morphological evolution consists of

• involving the nucleation of dislocations. The order of the obtained value of activation energy agrees well with that reported for the nucleation energy of dislocation [26], thereby providing support to this hypothesis. Atomic volume Because the radius of gyration becomes constant at the end of stage 1, a

• highlighted, the partial dislocation at the boundary of an abruptly terminated stacking fault moves towards the outer surface and finally disappears during the recovery. Color-coded snapshots indicating the atomic shear strains are also given by the side. Snapshot of the nanostructure at 575 K temperature

Near-field visualization of plasmonic lenses: an overall analysis of characterization errors

• Jing Wang,
• Yongqi Fu,
• Zongwei Xu and
• Fengzhou Fang

Beilstein J. Nanotechnol. 2015, 6, 2069–2077, doi:10.3762/bjnano.6.211

• shapes represent the ion beam spot focused in ideal case and the case of stigmation, respectively. Then the deformed structure is probed at near-field using NSOM, as shown in Figure 8b. It can be seen that the deformed slits lead to dislocation of the near-field intensity distribution along the A–B line

Lower nanometer-scale size limit for the deformation of a metallic glass by shear transformations revealed by quantitative AFM indentation

• Arnaud Caron and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2015, 6, 1721–1732, doi:10.3762/bjnano.6.176

• plastic deformation mechanisms of crystalline Pt(111) are consistent with the discrete mechanisms established for larger scales: Plasticity is mediated by dislocation gliding and no rate dependence is observed. For the metallic glass we have discovered that plastic deformation at the nanometer scale is

• mechanisms are not activated by indentation. In the case of metallic glass, we conclude that the energy stored in the stressed volume during nanometer-scale indentation is insufficient to account for the interfacial energy of a shear band in the glassy matrix. Keywords: AFM indentation; dislocation

• the generation of shear bands in metallic glasses [4]. Dislocation nucleation and shear band generation are mechanisms that operate at the nanometer scale. In order to investigate the fundamental mechanisms contributing to the mechanical behavior of materials new advanced experimental techniques are

Magnetic properties of self-organized Co dimer nanolines on Si/Ag(110)

• Lisa Michez,
• Kai Chen,
• Fabien Cheynis,
• Frédéric Leroy,
• Alain Ranguis,
• Haik Jamgotchian,
• Margrit Hanbücken and
• Laurence Masson

Beilstein J. Nanotechnol. 2015, 6, 777–784, doi:10.3762/bjnano.6.80

• regular-spaced surface traps, which can exist as steps [1][2], atomic sites [3], or the combination of both [4][5], chemical species [6] or dislocation networks [7]. In contrast, when molecules are deposited onto surfaces, the growth is more driven by thermodynamics and molecular arrangements are the

Mapping of elasticity and damping in an α + β titanium alloy through atomic force acoustic microscopy

• M. Kalyan Phani,
• Anish Kumar,
• T. Jayakumar,
• Walter Arnold and
• Konrad Samwer

Beilstein J. Nanotechnol. 2015, 6, 767–776, doi:10.3762/bjnano.6.79

• for studying their deformation behavior, crack nucleation and propagation, dislocation activity and interaction with grain boundaries and also even helps in understanding the bulk elastic properties of multiphase materials [1][2]. Over the last two decades many contact-resonance-based atomic force

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• different nature in the material (vacancy, dislocation, amorphization, etc.). High-dose implantations in Ge (>1015 atoms/cm2) have been reported to induce the formation of nanoporous structures [16][17][18][19][20][21][22][23][24][25]. Thus, ion implantation may be a simple way to produce a nanoporous

Si/Ge intermixing during Ge Stranski–Krastanov growth

• Alain Portavoce,
• Khalid Hoummada,
• Antoine Ronda,
• Dominique Mangelinck and
• Isabelle Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2374–2382, doi:10.3762/bjnano.5.246

• Abstract The Stranski–Krastanov growth of Ge islands on Si(001) has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even