Bismuth-based nanostructured photocatalysts for the remediation of antibiotics and organic dyes

• Akeem Adeyemi Oladipo and
• Faisal Suleiman Mustafa

Beilstein J. Nanotechnol. 2023, 14, 291–321, doi:10.3762/bjnano.14.26

• susceptibility, ferroelectricity, photostability and useful electrical properties [102][103][104][105]. The highest visible-light photocatalytic activity among bismuth-based oxides with a similar structure has been observed for Bi2WO6, which can be attributed to its distinctive structure [103][104]. It is

High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• force spectroscopy; Introduction With the recent miniaturization of semiconductor devices, understanding the physical and electrical properties of semiconductor devices, such as the dopant concentration, dopant distribution, and defect level distribution, at the nanoscale has become important. Among

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• significantly improve the electrical properties without affecting the optical transmission [9]. Several metals have been used for such thin layers, including silver [10], aluminium [11], copper [12], and gold [13]. Molybdenum thin films are another choice for the application in solar cells because of good

• roughness. In this work, we investigate the effect of laser annealing treatment on ITO/Mo (IM) bilayer thin films as transparent conducting material for solar cell applications. The structural, optical, and electrical properties of the IM structure were examined as functions of the laser energy

• roughness of the bilayer structure were studied utilizing an atomic force microscope (AFM, Bruker Dimension Edge) and the Gwyddion software. The optical transmission was measured using an UV–vis spectrophotometer (UV-3600i Plus, SHIMADZU) in the range of λ = 300–800 nm. Finally, the electrical properties

From a free electron gas to confined states: A mixed island of PTCDA and copper phthalocyanine on Ag(111)

• Alfred J. Weymouth,
• Emily Roche and
• Franz J. Giessibl

Beilstein J. Nanotechnol. 2022, 13, 1572–1577, doi:10.3762/bjnano.13.131

• mixed phase with a phthalocyanine molecule that exhibits different electrical properties, such as has been reported for a mixed phase of tin phthalocyanine (SnPc) with PTCDA [28]. SnPc acts very similarly to CuPc, except the aforementioned F-LUMO is not completely depleted but remains partially filled

Structural studies and selected physical investigations of LiCoO₂ obtained by combustion synthesis

• Monika Michalska,
• Paweł Ławniczak,
• Tomasz Strachowski,
• Adam Ostrowski and
• Waldemar Bednarski

Beilstein J. Nanotechnol. 2022, 13, 1473–1482, doi:10.3762/bjnano.13.121

• decreases, and, hence, the size of the crystallites increases. XRD analysis showed that phase-pure LiCoO2 material was maintained without additional phases. EPR studies revealed the presence of two Ni3+ complexes resulting from Ni impurities. The electrical properties of the studied LiCoO2 samples were

• conductivity and comparison of electrical properties of LCO powders) by using impedance spectroscopy (IS). Our studies provide important information on the mechanism of formation, particle growth, size, shape, and the control of these parameters during synthesis. Materials and Methods Synthesis of LiCoO2

• (Oxford Instruments, England). The concentration of paramagnetic ions was obtained using the procedure described elsewhere [61]. Spectral simulations were performed by applying the EasySpin software (version 5.2.27) [62]. Electrical properties The electrical properties of the investigated LiCoO2 doped

Recent trends in Bi-based nanomaterials: challenges, fabrication, enhancement techniques, and environmental applications

• Vishal Dutta,
• Ankush Chauhan,
• Ritesh Verma,
• C. Gopalkrishnan and
• Van-Huy Nguyen

Beilstein J. Nanotechnol. 2022, 13, 1316–1336, doi:10.3762/bjnano.13.109

• , heterostructure formation, interface modification, and Bi-content enhancement, have been employed. Defect formation Vacancies and defects affect the electrical properties of Bi-based semiconductor photocatalysts and, hence, govern the photocatalytic efficacy. Rao et al. reported an N2-assisted heat treatment

Enhanced electronic transport properties of Te roll-like nanostructures

• E. R. Viana,
• N. Cifuentes and
• J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

• electrical properties of these nanostructures, with a small disorder, and superior quality for nanodevice applications. Keywords: electrical characterization; field-effect transistors; hopping conduction; nanobelts; tellurium; Introduction The chalcogen tellurium (Te) is a rare element (0.002 ppm) in the

• these electrical properties with the facile synthesis of one-dimensional nanostructures may bring potential applications of this material in nanoscale optoelectronic integrated devices. However, only a few works have been dedicated to studying the electrical transport in Te-based one-dimensional

• ionization energy of the defects found on these nanostructures also favors the control of doping and, consequently, the electrical properties of the nanowires. These superior quality transport properties demonstrate the potential use of t-Te roll-like nanostructures for electronic device applications. (a–c

Studies of probe tip materials by atomic force microscopy: a review

• Ke Xu and
• Yuzhe Liu

Beilstein J. Nanotechnol. 2022, 13, 1256–1267, doi:10.3762/bjnano.13.104

• future, such probes will enable previously unexplored conductivity measurements, such as measurements of semiconductor nanostructures or electrical conductivity on insulating substrates. Conductive atomic force microscopy (C-AFM) can be used to characterize the electrical properties of semi-conductive

Comparing the performance of single and multifrequency Kelvin probe force microscopy techniques in air and water

• Jason I. Kilpatrick,
• Emrullah Kargin and
• Brian J. Rodriguez

Beilstein J. Nanotechnol. 2022, 13, 922–943, doi:10.3762/bjnano.13.82

• of topography and surface properties of interfaces in a wide range of environments [1]. Kelvin probe force microscopy (KPFM) utilizes the application of a bias and a conductive probe to map the local electrical properties of an interface at the nanoscale [2], allowing for the determination of the

• local contact potential difference (CPD) between the probe and the sample. This, in turn, allows the work function of the sample to be measured if the work function of the probe is known and vice versa. The mapping of local electrical properties of the interface is essential to further our understanding

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• be considered: (i) metallic particles from the Cu or Ni etching process and (ii) PMMA residues after the removal and rinsing processes. Both contaminations are leading causes of undesired p-type doping in CVD graphene, accompanied by a deterioration of its electrical properties [19][20][21][22]. The

Reliable fabrication of transparent conducting films by cascade centrifugation and Langmuir–Blodgett deposition of electrochemically exfoliated graphene

• Teodora Vićentić,
• Stevan Andrić,
• Vladimir Rajić and
• Marko Spasenović

Beilstein J. Nanotechnol. 2022, 13, 666–674, doi:10.3762/bjnano.13.58

• the substrate completely. To analyze the electrical properties of the synthesized graphene films, resistance values of each film were measured. Resistance values, optical transparency values, and the average number of layers in each graphene film are shown in Table 2. A larger number of graphene

Selected properties of Al_xZn_yO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target

• Witold Posadowski,
• Artur Wiatrowski,
• Jarosław Domaradzki and
• Michał Mazur

Beilstein J. Nanotechnol. 2022, 13, 344–354, doi:10.3762/bjnano.13.29

• and are then repulsed by the field near the target toward the substrate placed above it. For the case presented here, an analysis of the XRD results may be used to clarify the sudden change in the electrical properties of the deposited thin films depending on X. Measurements of structural properties

The effect of metal surface nanomorphology on the output performance of a TENG

• Yiru Wang,
• Xin Zhao,
• Yang Liu and
• Wenjun Zhou

Beilstein J. Nanotechnol. 2022, 13, 298–312, doi:10.3762/bjnano.13.25

• –semiconductor and semiconductor–metal contact pairs [14][15]. A semiconductor–metal contact can be described by the band diagram shown in Figure 1. The frictional electrical properties of materials depend on their work functions and Fermi levels [16][17]. The intermediate state in the bandgap can reduce the

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• used. All electrical measurements were made at controlled room temperature (23 °C) and humidity (30% RH) in ambient air. Results Electrical properties The resistivity of the thin film was determined to be 1 × 103 Ω·cm. The type of electrical conductivity was determined on the basis of the sign of the

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

• Max Mennicken,
• Sophia Katharina Peter,
• Corinna Kaulen,
• Ulrich Simon and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2022, 13, 219–229, doi:10.3762/bjnano.13.16

• has been successfully conducted and reveal the oxidation state of Ru during complex wire growth [19]. Electrical properties of Ru(TP)2-complex devices Here, we study the relation between device design and device performance and compare the transport and optical switching properties of functional Ru(TP

Engineered titania nanomaterials in advanced clinical applications

• Padmavati Sahare,
• Paulina Govea Alvarez,
• Juan Manual Sanchez Yanez,
• Gabriel Luna-Bárcenas,
• Samik Chakraborty,
• Sujay Paul and
• Miriam Estevez

Beilstein J. Nanotechnol. 2022, 13, 201–218, doi:10.3762/bjnano.13.15

• , inorganic, or organometallic material whose chemical, physical, and/or electrical properties change as a function of the size and shape of the material. Nanomaterials are designed at the atomic or molecular level, and most of the therapeutic nanoparticles (nps) are usually between 10 and 100 nm in size so

Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

Cantilever signature of tip detachment during contact resonance AFM

• Devin Kalafut,
• Ryan Wagner,
• Maria Jose Cadena,
• Anil Bajaj and
• Arvind Raman

Beilstein J. Nanotechnol. 2021, 12, 1286–1296, doi:10.3762/bjnano.12.96

• methods provide information on important mechanical and electrical properties across a wide variety of samples. CR-AFM, PFM, and ESM are built upon the fundamental assumption that as the cantilever is excited, the probe tip remains in contact with the sample. Signal-to-noise ratios in these measurements

Plasmon-enhanced photoluminescence from TiO₂ and TeO₂ thin films doped by Eu³⁺ for optoelectronic applications

• Marcin Łapiński,
• Jakub Czubek,
• Katarzyna Drozdowska,
• Anna Synak,
• Wojciech Sadowski and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2021, 12, 1271–1278, doi:10.3762/bjnano.12.94

• film. However, a blueshift occurs here due to the electrical properties of aluminum oxide. Additionally, it can be seen, that the position of the minimum of transmission as function of the Al2O3 film thickness. This may be explained by the different permittivity of the layers [34][35][36]. Emission and

Two dynamic modes to streamline challenging atomic force microscopy measurements

• Alexei G. Temiryazev,
• Andrey V. Krayev and
• Marina P. Temiryazeva

Beilstein J. Nanotechnol. 2021, 12, 1226–1236, doi:10.3762/bjnano.12.90

• science The relative ease of use of AFM and a large number of operating modes allowed for the study of mechanical, magnetic, and electrical properties of various objects. At the same time, surface profile measurements remain both the main application of the method and the basis of two-pass technics of

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• (CNT), and graphene (GR) towards producing cost-effective and efficient LED. A second strategy consisting of enhancing the optical and electrical properties of LED via SPR of MNP is also surveyed. The LED covered in this review include inorganic LED, OLED, inorganic/organic LED, and HyLED. The

• -based ones. However, CNT and graphene tend to provide better thermal management and electrical properties; therefore, their integration into LED is of growing importance. Out of the three OLED-incorporating carbon-based nanostructures, OLED + GR possessed the lowest turn-on voltage; however, the

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

• Adem Koçyiğit,
• Adem Sarılmaz,
• Teoman Öztürk,
• Faruk Ozel and
• Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

• have revealed that the bandgap value is suitable for optoelectronic devices. To the best of our knowledge, there is no study on the electrical properties of CuNiCoS4-based photodiodes. The usage of different materials as interfacial layers in metal–semiconductor devices is a hot research topic

• nanocrystals can be inserted between metal and semiconductor as interfacial layer to increase the effect of the illumination and to control electrical properties of the metal–semiconductor device. In this work, CuNiCoS4 nanocrystals were successfully obtained as interlayer of Schottky diodes. The electrical

• transition [8]. The bandgap was determined as 1.66 eV by extrapolating the linear portion of the band energy graph given in Figure 3b. Electrical properties In order to determine the electrical performance of the Au/CuNiCoS4/p-Si device, I–V measurements were performed on the photodiode in the dark and under

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• improves optical and electrical properties of gallium arsenide-based devices [31][32][33]. In this work we examine the influence of the surface treatment of GaAs (cleaning, etching, and passivation) on the external quantum efficiency (EQE) results of the AZO/Al2O3/p-GaAs PV structures (in which AZO stands

Boosting of photocatalytic hydrogen evolution via chlorine doping of polymeric carbon nitride

• Malgorzata Aleksandrzak,
• Michalina Kijaczko,
• Wojciech Kukulka,
• Daria Baranowska,
• Martyna Baca,
• Beata Zielinska and
• Ewa Mijowska

Beilstein J. Nanotechnol. 2021, 12, 473–484, doi:10.3762/bjnano.12.38

• with hydrogen evolution under simulated solar light. A series of microscopic and spectroscopic techniques have been used to characterize the morphology, chemical structure, optical, photophysical, and electrical properties of the obtained carbon nitrides. Results and Discussion The detailed analysis of

Exploring the fabrication and transfer mechanism of metallic nanostructures on carbon nanomembranes via focused electron beam induced processing

• Christian Preischl,
• Linh Hoang Le,
• Elif Bilgilisoy,
• Armin Gölzhäuser and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2021, 12, 319–329, doi:10.3762/bjnano.12.26

• arbitrary substrates or grids to obtain free-standing 2D membranes [25]. The specific choice of the self-assembling molecules determines the thickness, porosity, stiffness, and the mechanical/electrical properties of the resulting CNM [26][27]. The SAMs that are used for the fabrication of CNMs consist of