Fragmentation of metal(II) bis(acetylacetonate) complexes induced by slow electrons

• Janina Kopyra and
• Hassan Abdoul-Carime

Beilstein J. Nanotechnol. 2023, 14, 980–987, doi:10.3762/bjnano.14.81

• . Metal bis(acetylacetonate) complexes are of interest for many thin film fabrication techniques (e.g., chemical vapor deposition [9], atomic layer epitaxy [10], or atomic layer etching [11]) and as precursors for carbon materials, such as carbon nanotubes and carbon onion particles [12], or metal oxide

Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• FTIR spectroscopy of the etching product are shown in Figure 1). The bands with the wavenumbers of 2105 and 2900 cm−1, and the broad signal at 3400 cm−1 were attributed to vibrations of Si–H, C–H, and O–H bonds, respectively [25]. The IR spectra of the unetched Si NPs display bands in a wavenumber

• of vacuum annealing of the Si NPs at 900 °C and subsequent HF etching followed by annealing with red phosphorus at 670 °C was carried out. The successful synthesis of cubic Si3P4 under these conditions confirmed that the external amorphous silicon was not the defining factor in the formation of the

• through diffusion doping of wafers. Incorporating a gaseous etching step into the annealing process widens the applicable use to syntheses of novel nanosized silicon selenides, arsenides, and sulfides. Methods Distilled water, acetonitrile (reagent grade), 1-dodecanol (analytical grade), and hexane

N-Heterocyclic carbene-based gold etchants

• Robert B. Chevalier,
• Justin Pantano,
• Matthew K. Kiesewetter and
• Jason R. Dwyer

Beilstein J. Nanotechnol. 2023, 14, 865–871, doi:10.3762/bjnano.14.71

• dissolution of gold. We present scanning electron micrographs and elemental imaging analyses by energy dispersive X-ray spectroscopy to examine the effect of solutions of each species on the gold film. This work highlights the risk of unwanted etching during some routes to NHC-based surface functionalization

• but also the potential for deliberate etching, with the outcome determined by choice of chemically synthesized organic species and solvent. Keywords: gold etchant; microfabrication; N-heterocyclic carbenes; self-assembled monolayer (SAM); thin films; Introduction Self-assembled monolayers (SAMs) are

• observation contrasts with the localized depletion of gold during etching by solutions of 1 in DCM and THF, as shown in the electron micrographs in Figure 3b,c. The formation of voids in the gold film allowed for comparison of this material loss between different samples without the need to standardize

Silver-based SERS substrates fabricated using a 3D printed microfluidic device

• Phommachith Sonexai,
• Minh Van Nguyen,
• Bui The Huy and
• Yong-Ill Lee

Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65

• assembled into a monolayer on a liquid/air interface and deposited onto a porous silicon array prepared through a metal-assisted chemical etching approach. By using the developed microfluidic device, enhancement factors of the Raman signal for rhodamine B (at 10−9 M) and melamine (at 10−7 M) of 8.59 × 106

• chemical etching (MACE), the wafer pieces were placed in a beaker containing an etchant solution made up of 5 mL of 4.6 M HF and 5 mL of 0.02 M AgNO3. The etching timings were 0, 5, 10, 20, 40, and 80 min. After the etching process, to remove the as-generated Ag dendrites, the substrates were immediately

• . Optimization of the PS@Ag SERS substrate fabrication To optimize the etching time of PS on the wafers, a RhB solution (10−5 M) was chosen for estimating the SERS signal. The wafer pieces were etched for 0, 5, 10, 20, 40, and 80 min. The corresponding substrates were denoted PS0min@Ag, PS5min@Ag, PS10min@Ag

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• plasmonic metals or their alloys [23][24][25][26][27][28][29][30][31][32]. The chemical and electrochemical etching of GaN heteroepitaxial layers leads to various nanostructures formed on line defects (dislocations), such as straight nanopillars, bunches of nanopillars, and pits [31][32]. The nanostructured

Observation of multiple bulk bound states in the continuum modes in a photonic crystal cavity

• Rui Chen,
• Yi Zheng,
• Xingyu Huang,
• Qiaoling Lin,
• Chaochao Ye,
• Meng Xiong,
• Martijn Wubs,
• Yungui Ma,
• Minhao Pu and
• Sanshui Xiao

Beilstein J. Nanotechnol. 2023, 14, 544–551, doi:10.3762/bjnano.14.45

• To verify the multiple modes in the bandgap mirror-assisted BIC cavity, several samples with different sidelengths (w) were fabricated by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching on 500 nm thick AlGaAs on a sapphire wafer. The parameter sweep of w around 400 nm was

• nonradiative part of the Q factor mentioned above. Qnr is caused by structural imperfections and disorders, including roughness on the surface, tilted sidewalls, and incomplete etching of the AlGaAs layer, as shown in Figure 3a. Theoretically, resonances of high-order modes have lower Q factors and longer

A mid-infrared focusing grating coupler with a single circular arc element based on germanium on silicon

• Xiaojun Zhu,
• Shuai Li,
• Ang Sun,
• Yongquan Pan,
• Wen Liu,
• Yue Wu,
• Guoan Zhang and
• Yuechun Shi

Beilstein J. Nanotechnol. 2023, 14, 478–484, doi:10.3762/bjnano.14.38

• couplers requiring secondary etching, the proposed full-etch grating coupler structure can reduce the complexity of fabrication and can provide a prospective platform for MIR photonic integration and photonic biosensor detection. Keywords: circular arc element; focusing grating coupler; germanium-on

• MIR FGC consists of a section of tapered linear gratings and a single CAE. Figure 1b shows the cross-sectional view of the proposed MIR FGC. The grating period is Λ, the width of the trenches is w, and the duty cycle is defined as f = w/Λ. The Ge waveguide thickness is hetch, which is also the etching

• plasma etching (ICP). EBL is used to produce lithographically the grating pattern into the resist, which can be further transferred onto the Ge layer by ICP. This is a simple manufacturing process that requires only one single etch step. Then, we can use a continuous-wave single-frequency tunable MIR

Combining physical vapor deposition structuration with dealloying for the creation of a highly efficient SERS platform

• Adrien Chauvin,
• Walter Puglisi,
• Damien Thiry,
• Cristina Satriano,
• Rony Snyders and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2023, 14, 83–94, doi:10.3762/bjnano.14.10

• of the less noble component of an alloy creating a skeleton made of the noble element [23]. Dealloying is usually accomplished through a chemical step in which the alloy is dipped into an etching solution to remove the less noble metal [24]. This process leads to highly homogenous, porous structure

• to the creation of a AgCl layer [41][42], more pronounced for a lower amount of Ag, which delays the dealloying [39][43]. This behavior can be seen for the sample AlAg30. The aluminum residue is stable after 10 min in an HCl solution and then drops to 25 atom % after 60 min in the etching solution

• by the confinement effect which slows down the dealloying process in smaller pores since etching byproducts stay trapped and limit further dealloying of the structure. In other words, the extraction of AlCl3 formed during dealloying and confined in small pores is difficult since no solution agitation

Upper critical magnetic field in NbRe and NbReN micrometric strips

• Zahra Makhdoumi Kakhaki,
• Antonio Leo,
• Federico Chianese,
• Loredana Parlato,
• Giovanni Piero Pepe,
• Angela Nigro,
• Carla Cirillo and
• Carmine Attanasio

Beilstein J. Nanotechnol. 2023, 14, 45–51, doi:10.3762/bjnano.14.5

• voltage contacts of L = 90 μm. The NbReN films were structured by using direct laser writer exposure followed by argon ion etching into constriction-type bridges with w = 2 μm and L = 700 μm. Further details on the fabrication procedure of the films are reported elsewhere [4][8]. The superconducting

Gap-directed chemical lift-off lithographic nanoarchitectonics for arbitrary sub-micrometer patterning

• Chang-Ming Wang,
• Hong-Sheng Chan,
• Chia-Li Liao,
• Che-Wei Chang and
• Wei-Ssu Liao

Beilstein J. Nanotechnol. 2023, 14, 34–44, doi:10.3762/bjnano.14.4

• the rectangle function in ZEN 2012 Service Pack 2 software (Carl Zeiss Microscopy, Jena, Germany). XPS spectra after each surface modification step were collected with ULVAC-PHI X-ray photoelectron spectrometer (PHI QuanteraII, Kanagawa, Japan). Selective wet chemical etching processes and metal

• structure characterization To transfer chemical patterns created by CLL to the underneath metal layer, a wet chemical etching process was adopted. After lifting the PDMS stamp from a SAM-modified Au substrate, the Au surface was immersed in an aqueous mixture containing 40 mM iron nitrate and 60 mM thiourea

• to etch the exposed underlying Au film. After 30 min of etching, the substrate was rinsed with deionized water and blown dry with nitrogen gas. The transferred metal structures were then characterized by optical microscopy, scanning election microscopy (SEM, JEOL JSM-7600F, Tokyo, Japan) and atomic

Observation of collective excitation of surface plasmon resonances in large Josephson junction arrays

• Roger Cattaneo,
• Mikhail A. Galin and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2022, 13, 1578–1588, doi:10.3762/bjnano.13.132

• using photolithography and reactive ion etching. The JJ sensor with variable thickness and a width of ≈100 nm is made by Ga+ focused ion beam etching. The JJ is made small in order to increase its resistance Rn to approx. 50 Ω, which is needed for a good impedance matching with the antenna. In order to

Coherent amplification of radiation from two phase-locked Josephson junction arrays

• Mikhail A. Galin,
• Vladimir M. Krasnov,
• Ilya A. Shereshevsky,
• Nadezhda K. Vdovicheva and
• Vladislav V. Kurin

Beilstein J. Nanotechnol. 2022, 13, 1445–1457, doi:10.3762/bjnano.13.119

• self-aligning process using e-beam lithography and reactive ion etching [16][17]. Similar arrays were studied earlier in [9][12][13], where additional information about sample characterization can be found. Figure 1a,b shows the layout of “sample-1”. It has been fabricated on a 1 × 1 cm2 silicon

Double-layer symmetric gratings with bound states in the continuum for dual-band high-Q optical sensing

• Chaoying Shi,
• Jinhua Hu,
• Xiuhong Liu,
• Junfang Liang,
• Jijun Zhao,
• Haiyan Han and
• Qiaofen Zhu

Beilstein J. Nanotechnol. 2022, 13, 1408–1417, doi:10.3762/bjnano.13.116

• structure can be fabricated as follows [56]. At first, the gratings of the bottom layer are fabricated using electron beam lithography (EBL) and reactive ion etching (RIE) on a SOI chip with a single crystalline silicon device layer and a buried oxide (BOX), where this SOI chip serves as the receiving

• polishing and deep RIE, followed by removal of the BOX layer of the donor substrate by wet etching using hydrofluoric acid. Finally, the gratings are fabricated on the top layer with EBL and RIE, while the silicon handle and BOX layer on top are removed in the same way. It should be pointed out that the

Studies of probe tip materials by atomic force microscopy: a review

• Ke Xu and
• Yuzhe Liu

Beilstein J. Nanotechnol. 2022, 13, 1256–1267, doi:10.3762/bjnano.13.104

• , followed by imaging with commercially available silicon tips. Individual SWNTs are extracted from the substrates to produce superior SWNT probes in this process. This type of tip can be applied for etching by adjusting the length of the nanotubes under 2 nm control. In fluid and air, this type of

Roll-to-roll fabrication of superhydrophobic pads covered with nanofur for the efficient clean-up of oil spills

• Patrick Weiser,
• Robin Kietz,
• Marc Schneider,
• Matthias Worgull and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2022, 13, 1228–1239, doi:10.3762/bjnano.13.102

• using various dry/wet etching techniques including electrochemical HF etching, stain etching, metal-assisted etching, and reactive ion etching [9][11]. So-called “nanograss” or “black silicon” is a surface modification of silicon where the surface is covered with millions of tiny needle-like structures

• with high aspect ratio. These needles render superhydrophobic properties to the surface. Such surfaces can either be prepared using a RIE process [12] or a laser-assisted etching process described by Mazur et al. [13], which requires expensive silicon wafers as substrate as well as a femtosecond laser

Design of surface nanostructures for chirality sensing based on quartz crystal microbalance

• Yinglin Ma,
• Xiangyun Xiao and
• Qingmin Ji

Beilstein J. Nanotechnol. 2022, 13, 1201–1219, doi:10.3762/bjnano.13.100

• prefer the ʟ-(+)-tartrate oxidation, whereas the etched films in ᴅ-(−)-tartaric acid tend to oxidize ᴅ-(−)-tartrate. This indicated that the produced chiral surfaces of the CuO films from the etching process may regulate the chiral selective reactions on the surface. Jie et al. synthesized chiral R/L

Microneedle-based ocular drug delivery systems – recent advances and challenges

• Piotr Gadziński,
• Anna Froelich,
• Monika Wojtyłko,
• Antoni Białek,
• Julia Krysztofiak and
• Tomasz Osmałek

Beilstein J. Nanotechnol. 2022, 13, 1167–1184, doi:10.3762/bjnano.13.98

• photoresistant layer. The wafer is then etched. A distinction can be made between wet and dry etching. The wet etching process uses a potassium hydroxide solution, while dry etching includes the physical methods ion milling and sputtering and the chemical method high-pressure plasma [156]. Lithographic

Electrocatalytic oxygen reduction activity of AgCoCu oxides on reduced graphene oxide in alkaline media

• Iyyappan Madakannu,
• Indrajit Patil,
• Bhalchandra Kakade and
• Kasibhatta Kumara Ramanatha Datta

Beilstein J. Nanotechnol. 2022, 13, 1020–1029, doi:10.3762/bjnano.13.89

• et al. prepared supportless Ag nanowires and 1D mesoporous hollow AgPdPt nanotubes by micelle-assisted galvanic replacement followed by acid etching. They found that hollow AgPdPt structures exhibited a better ORR activity with onset and half-wave potential of 0.99 V and 0.90 V vs RHE, respectively

Effects of focused electron beam irradiation parameters on direct nanostructure formation on Ag surfaces

• Jānis Sniķeris,
• Vjačeslavs Gerbreders,
• Andrejs Bulanovs and
• Ēriks Sļedevskis

Beilstein J. Nanotechnol. 2022, 13, 1004–1010, doi:10.3762/bjnano.13.87

• distribution there. Under the assumption that carbon and carbon-containing silver areas are more susceptible to N plasma etching, we could theorize that carbon atoms in this particular case have reached up to 140 nm deep within the Ag layer. The carbon diffusion could have been caused by a number of reasons

• , radiolysis by collisions with electrons seeming like the most obvious one. It should be noted that N plasma treatment in this case also affected the clean Ag surface, turning it into an interfering thin film. We believe that controlled etching with plasma has the potential to explore the structure of metal

DNA aptamer selection and construction of an aptasensor based on graphene FETs for Zika virus NS1 protein detection

• Nathalie B. F. Almeida,
• Thiago A. S. L. Sousa,
• Viviane C. F. Santos,
• Camila M. S. Lacerda,
• Thais G. Silva,
• Rafaella F. Q. Grenfell,
• Flavio Plentz and
• Antero S. R. Andrade

Beilstein J. Nanotechnol. 2022, 13, 873–881, doi:10.3762/bjnano.13.78

• previously described by our group elsewhere [24]. The dimensions of the sensing region (100 μm × 100 μm) were defined by O2 plasma etching. The source and drain electrodes were fabricated by electron-beam evaporation of 2 nm/100 nm of Ti/Au, and we covered the metal contacts with a 10 μm thick passivation

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• as a supporting layer to (i) retain the integrity of graphene during the wet-etching bath required to dissolve the metallic substrate and (ii) provide mechanical stability when transferring graphene to the target substrates. During this process, two primary external sources of contamination need to

• be considered: (i) metallic particles from the Cu or Ni etching process and (ii) PMMA residues after the removal and rinsing processes. Both contaminations are leading causes of undesired p-type doping in CVD graphene, accompanied by a deterioration of its electrical properties [19][20][21][22]. The

• single crystals using PMMA with different weight percentages and AMWs (Figure 1a–g). As detailed in the description of the graphene transfer process, after the Cu etching process (Supporting Information File 1, Figure S1b, step II), the PMMA-coated graphene is rinsed in a DI water bath at least three

Recent advances in nanoarchitectures of monocrystalline coordination polymers through confined assembly

• Lingling Xia,
• Qinyue Wang and
• Ming Hu

Beilstein J. Nanotechnol. 2022, 13, 763–777, doi:10.3762/bjnano.13.67

• fronts may be encapsulated in the single crystals [29][30][31][32][33][34][35][36][37][38]. When the encapsulated networks are removed by etching or dissolving, the previously occupied spaces can be freed, leaving periodic or random mesospace inside the single crystals [29][30][31][32][33][34][35][36][37

Nanoarchitectonics of the cathode to improve the reversibility of Li–O₂ batteries

• Hien Thi Thu Pham,
• Jonghyeok Yun,
• So Yeun Kim,
• Sang A Han,
• Jung Ho Kim,
• Jong-Won Lee and
• Min-Sik Park

Beilstein J. Nanotechnol. 2022, 13, 689–698, doi:10.3762/bjnano.13.61

• ratio of Zn/Co (x/y = 1/4, 1/1, and 4/1) in the starting materials. After carbonization at 900 °C and chemical etching with 1 M H2SO4, bimetallic ZnxCoy–C/CNT composites were successfully obtained to be used as cathode materials for LOBs. Figure 1b–d shows the morphologies of bimetallic Zn4Co1, Zn1Co1

• -step growth mechanism (i.e., nucleation and growth) [39]. The different formation mechanisms are mainly responsible for determining the particle sizes of ZIF-8 and ZIF-67. After carbonization and chemical etching processes, we obtained a series of ZnxCoy–C/CNT composites, as shown in Figure 1e–1g, in

• the carbonization process. After the carbonization and chemical etching processes, the sizes of the ZnxCoy particles were slightly decreased due to the thermal evaporation of organic linkers and metal ions, maintaining free spaces in the particles. According to the X-ray diffraction (XRD) patterns of

Fabrication and testing of polymer microneedles for transdermal drug delivery

• Vahid Ebrahiminejad,
• Zahra Faraji Rad,
• Philip D. Prewett and
• Graham J. Davies

Beilstein J. Nanotechnol. 2022, 13, 629–640, doi:10.3762/bjnano.13.55

• to grow to $50.6 billion by 2025 [6]. To enable mass manufacturing of MNs, factors such as reproducibility, fabrication precision, lower production cost, and time should be addressed. For instance, manufacturing techniques such as reactive ion etching and deep reactive ion etching incorporate

Investigation of electron-induced cross-linking of self-assembled monolayers by scanning tunneling microscopy

• Patrick Stohmann,
• Sascha Koch,
• Yang Yang,
• Christopher David Kaiser,
• Julian Ehrens,
• Jürgen Schnack,
• Niklas Biere,
• Dario Anselmetti,
• Armin Gölzhäuser and
• Xianghui Zhang

Beilstein J. Nanotechnol. 2022, 13, 462–471, doi:10.3762/bjnano.13.39

• V and +0.4 to +1.2 V. A z-resolution higher than 0.01 nm could be achieved. The STM tips were prepared from 0.375 mm polycrystalline tungsten wire (Alfa Aesar) by electrochemical etching in a 3 M NaOH solution. The instrument was calibrated by imaging HOPG with atomic resolution. The data was post