An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• used, in situ, in between exposures to assess the shrinkage, stiffness change or sputtering of the resist. More applications such as conductive AFM, piezo-force microscopy or magnetic force microscopy are within reach of the presented technology and would make AFM–HIM appealing to the microelectronics

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• standing topics of various investigations because silicon is still the most widely used semiconductor material for a broad range of micro- and nano-electromechanical systems, microelectronics, and photovoltaics [1][2]. Silicon nanostructures, such as bottom-up-grown nanowires [3], were also synthesized

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

• Marwa Mokni,
• Gianluigi Maggioni,
• Abdelkader Kahouli,
• Sara M. Carturan,
• Walter Raniero and
• Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

• dielectric, S the surface of electrodes and ε’ (often named k in the industry of microelectronics) is the dielectric constant (more rigorously called relative permittivity). As seen by this equation, the insulating gate capacitance Ci is directly proportional to ε’. Typically, for parylene C ε’ = 3.15 (at 1

Sub-wavelength waveguide properties of 1D and surface-functionalized SnO₂ nanostructures of various morphologies

• Venkataramana Bonu,
• Binaya Kumar Sahu,
• Arindam Das,
• Sankarakumar Amirthapandian,
• Sandip Dhara and
• Harish C. Barshilia

Beilstein J. Nanotechnol. 2019, 10, 379–388, doi:10.3762/bjnano.10.37

• commercial application as a gas sensor, transparent conducting electrodes, and catalyst [13][14][15]. SnO2 NSs have been used in several other areas such as sub-wavelength waveguide sensors [4], microelectronics [6], Li-ion batteries [16], and lubricants [17]. Oxygen vacancy related defects in SnO2

Raman study of flash-lamp annealed aqueous Cu₂ZnSnS₄ nanocrystals

• Yevhenii Havryliuk,
• Oleksandr Selyshchev,
• Mykhailo Valakh,
• Alexandra Raevskaya,
• Oleksandr Stroyuk,
• Constance Schmidt,
• Volodymyr Dzhagan and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2019, 10, 222–227, doi:10.3762/bjnano.10.20

• serves for decades in Si microelectronics [31] and CIGS solar cell technology [32][33]. Results and Discussion Characterization of original CZTS NC films The first observation made on the difference between the samples ink0 and ink1 was an unequal morphology of the films formed. Those formed from ink0

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• exception of optical applications. The latter is due to its indirect band gap in the bulk state. Benefiting from their reduced size, Si NCs show optical activity [1][2] and quantum confinement behavior [3] and have inspired novel applications in microelectronics [4], optics [1] and photovoltaics [5][6]. In

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• suppressed the adoption of the original Ga+ SIBL technology for silicon microelectronics and other applications. There has, however, been a paradigm shift in ion beam microscopy and lithography with the development in 2006 of the atomic level ion source (ALIS) [23]. This can be used to provide a focused beam

Controlling surface morphology and sensitivity of granular and porous silver films for surface-enhanced Raman scattering, SERS

• Sherif Okeil and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2018, 9, 2813–2831, doi:10.3762/bjnano.9.263

• ][60]. Recently, other methods emerged with the aim of producing SERS substrates at low cost, enabling their large-scale production. These methods include inkjet-printing and pen-on-paper approaches [61][62]. Plasma treatment has been widely used for the last decades for microelectronics and surface

Electromigrated electrical optical antennas for transducing electrons and photons at the nanoscale

• Arindam Dasgupta,
• Mickaël Buret,
• Nicolas Cazier,
• Marie-Maxime Mennemanteuil,
• Reinaldo Chacon,
• Kamal Hammani,
• Jean-Claude Weeber,
• Juan Arocas,
• Laurent Markey,
• Gérard Colas des Francs,
• Alexander Uskov,
• Igor Smetanin and
• Alexandre Bouhelier

Beilstein J. Nanotechnol. 2018, 9, 1964–1976, doi:10.3762/bjnano.9.187

• requirements. Silicon-based photonics for instance is offering a cost-effective strategy to merge microelectronics and photonics [1][2] and address the next generation of interchip and intrachip optical interconnects. Optical and electrical cross talk between vertical interconnect accesses, thermal envelope

Synthesis of hafnium nanoparticles and hafnium nanoparticle films by gas condensation and energetic deposition

• Irini Michelakaki,
• Nikos Boukos,
• Dimitrios A. Dragatogiannis,
• Spyros Stathopoulos,
• Costas A. Charitidis and
• Dimitris Tsoukalas

Beilstein J. Nanotechnol. 2018, 9, 1868–1880, doi:10.3762/bjnano.9.179

• constant HfO2 and its compounds are used in the field of microelectronics for the manufacturing of integrated circuits and more particularly as gate dielectrics of metal-oxide semiconductor transistors having replaced the traditional thermally grown SiO2 dielectric [34]. More recently, HfO2 was also

Toward the use of CVD-grown MoS₂ nanosheets as field-emission source

• Geetanjali Deokar,
• Nitul S. Rajput,
• Junjie Li,
• Francis Leonard Deepak,
• Wei Ou-Yang,
• Nicolas Reckinger,
• Carla Bittencourt,
• Jean-Francois Colomer and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2018, 9, 1686–1694, doi:10.3762/bjnano.9.160

• the fabricated MoS2 NSs could have a great potential as robust high-performance electron-emitter material for various applications such as microelectronics and nanoelectronics, flat-panel displays and electron-microscopy emitter tips. Keywords: chemical vapor deposition (CVD); field emission

Interaction-tailored organization of large-area colloidal assemblies

• Silvia Rizzato,
• Elisabetta Primiceri,
• Anna Grazia Monteduro,
• Adriano Colombelli,
• Angelo Leo,
• Maria Grazia Manera,
• Roberto Rella and
• Giuseppe Maruccio

Beilstein J. Nanotechnol. 2018, 9, 1582–1593, doi:10.3762/bjnano.9.150

• , Campus Ecotekne, Via Monteroni, Lecce, Italy National Institute of Gastroenterology “S. De Bellis” Research Hospital, via Turi 27, 70013, Castellana Grotte (Bari), Italy Institute for Microelectronics and Microsystems, IMM-CNR, Lecce, Italy 10.3762/bjnano.9.150 Abstract Colloidal lithography is an

Evaluation of replicas manufactured in a 3D-printed nanoimprint unit

• Manuel Caño-García,
• Morten A. Geday,
• Manuel Gil-Valverde,
• Xabier Quintana and
• José M. Otón

Beilstein J. Nanotechnol. 2018, 9, 1573–1581, doi:10.3762/bjnano.9.149

• microelectronics, optics, photonic integrated circuits, plasmonics or microfluidics [3]. NIL is customarily split into three categories, “hard”, “soft” and “hybrid” NIL [4], depending on the kind of mold employed in the transfer. Hard NIL uses molds made of quartz or silicon, and allows for the transfer of

Electrodeposition of reduced graphene oxide with chitosan based on the coordination deposition method

• Mingyang Liu,
• Yanjun Chen,
• Chaoran Qin,
• Zheng Zhang,
• Shuai Ma,
• Xiuru Cai,
• Xueqian Li and
• Yifeng Wang

Beilstein J. Nanotechnol. 2018, 9, 1200–1210, doi:10.3762/bjnano.9.111

• ) nanocomposites have also gained growing interest in the development of advanced materials [6][7][8]. The electrodeposition technique has drawn extensive attention lately since it offers an effective convergent method to integrate biology with microelectronics to build the bio-device interface, which enables

An implementation of spin–orbit coupling for band structure calculations with Gaussian basis sets: Two-dimensional topological crystals of Sb and Bi

• Sahar Pakdel,
• Mahdi Pourfath and
• J. J. Palacios

Beilstein J. Nanotechnol. 2018, 9, 1015–1023, doi:10.3762/bjnano.9.94

• , Institute for Research in Fundamental Sciences (IPM), Tehran 19395-5531, Iran Institute for Microelectronics, TU Wien, Gusshausstrasse 27–29/E360, 1040 Vienna, Austria Instituto Nicolás Cabrera (INC), and Condensed Matter Physics Institute (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• applications, this material is useful when synthesized as nanoparticles [3]. However, for specific fields, such as microelectronics and optics, its deposition as thin film highlighted some interesting physical properties, such as the lattice constant close to the value of Si (a = 0.541 nm) [4] and the

• when annealed at different temperatures and in reactive or inert gas atmospheres. A set of samples has been annealed at a temperature slightly above the growth temperature (300 °C), a value compatible with a back-end process flow typically used in microelectronics CMOS integration process, and in O2

The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene

• Egor A. Kolesov,
• Mikhail S. Tivanov,
• Olga V. Korolik,
• Olesya O. Kapitanova,
• Xiao Fu,
• Hak Dong Cho,
• Tae Won Kang and
• Gennady N Panin

Beilstein J. Nanotechnol. 2018, 9, 704–710, doi:10.3762/bjnano.9.65

• Department of Physics, Quantum-Functional Semiconductor Research Center, Nano Information Technology Academy, Dongguk University, 3-26 Pildong, Junggu, 100-715, Seoul, Korea Institute for Microelectronics Technology & High Purity Materials, RAS, 142432 Chernogolovka, Moscow district, Russia 10.3762/bjnano

• Program for Research "Photonics, opto- and microelectronics" and Russian Foundation of Basic Researches (individual project 16-33-60229), as well as partially supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (ME) (No

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

• Kristjan Kalam,
• Helina Seemen,
• Peeter Ritslaid,
• Mihkel Rähn,
• Aile Tamm,
• Kaupo Kukli,
• Aarne Kasikov,
• Joosep Link,
• Raivo Stern,
• Salvador Dueñas,
• Helena Castán and
• Héctor García

Beilstein J. Nanotechnol. 2018, 9, 119–128, doi:10.3762/bjnano.9.14

• with a Zr/Fe atomic ratio of 2.0. Keywords: atomic layer deposition; metal oxides; thin films; Introduction Doped ZrO2 has been a subject of interest because of several potential applications, for example, in microelectronics as a memory material [1]. Also, doping a dielectric film with a magnetic

Comparative study of post-growth annealing of Cu(hfac)₂, Co₂(CO)₈ and Me₂Au(acac) metal precursors deposited by FEBID

• Marcos V. Puydinger dos Santos,
• Aleksandra Szkudlarek,
• Artur Rydosz,
• Carlos Guerra-Nuñez,
• Fanny Béron,
• Kleber R. Pirota,
• Stanislav Moshkalev,
• José Alexandre Diniz and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 91–101, doi:10.3762/bjnano.9.11

• storage, ferroelectric tunnel junction memristors, metal interconnects for high performance integrated circuits in microelectronics and nano-optics applications, especially in the areas of plasmonics and metamaterials. Focused-electron-beam-induced deposition (FEBID) is a maskless direct-write tool

Gas-sensing behaviour of ZnO/diamond nanostructures

• Marina Davydova,
• Alexandr Laposa,
• Jiri Smarhak,
• Alexander Kromka,
• Neda Neykova,
• Josef Nahlik,
• Jiri Kroutil,
• Jan Drahokoupil and
• Jan Voves

Beilstein J. Nanotechnol. 2018, 9, 22–29, doi:10.3762/bjnano.9.4

• Marina Davydova Alexandr Laposa Jiri Smarhak Alexander Kromka Neda Neykova Josef Nahlik Jiri Kroutil Jan Drahokoupil Jan Voves Institute of Physics v.v.i., Academy of Sciences of the Czech Republic, Na Slovance 2, 18221 Prague, Czech Republic Department of Microelectronics, Faculty of Electrical

Strategy to discover full-length amyloid-beta peptide ligands using high-efficiency microarray technology

• Clelia Galati,
• Natalia Spinella,
• Lucio Renna,
• Danilo Milardi,
• Francesco Attanasio,
• Michele Francesco Maria Sciacca and
• Corrado Bongiorno

Beilstein J. Nanotechnol. 2017, 8, 2446–2453, doi:10.3762/bjnano.8.243

• of 10 µM. Fabrication of HESs HESs were prepared by exploiting the highly controlled materials and technologies conventionally used for the construction of microelectronics devices. The detection sensitivity is essentially determined by the signal-to-noise (S/N) ratio. A simple approach to increasing

Changes of the absorption cross section of Si nanocrystals with temperature and distance

• Michael Greben,
• Petro Khoroshyy,
• Sebastian Gutsch,
• Daniel Hiller,
• Margit Zacharias and
• Jan Valenta

Beilstein J. Nanotechnol. 2017, 8, 2315–2323, doi:10.3762/bjnano.8.231

• attainable purity – has been a dominant material for microelectronics and photovoltaics. However, the constantly increasing energy consumption and environmental issues challenge researchers to develop fundamentally new concepts to overcome the limitations of current technologies. The nanocrystalline form of

Advances and challenges in the field of plasma polymer nanoparticles

• Andrei Choukourov,
• Pavel Pleskunov,
• Daniil Nikitin,
• Valerii Titov,
• Artem Shelemin,
• Mykhailo Vaidulych,
• Anna Kuzminova,
• Pavel Solař,
• Jan Hanuš,
• Jaroslav Kousal,
• Ondřej Kylián,
• Danka Slavínská and
• Hynek Biederman

Beilstein J. Nanotechnol. 2017, 8, 2002–2014, doi:10.3762/bjnano.8.200

• predictable structure hampered the extensive use of plasma polymers in real world applications, although a multitude of potential utilizations have been suggested. In the mid-twentieth century, such deposits were studied as possible candidates for the production of thin dielectric films for microelectronics

Imidazolium-based ionic liquids used as additives in the nanolubrication of silicon surfaces

• Patrícia M. Amorim,
• Ana M. Ferraria,
• Rogério Colaço,
• Luís C. Branco and
• Benilde Saramago

Beilstein J. Nanotechnol. 2017, 8, 1961–1971, doi:10.3762/bjnano.8.197

• worst tribological behavior in what concerns CoF, confirmed the stronger interaction with [EtSO4]. The excellent results obtained with [EMIM][EtSO4] and [EVIM][EtSO4] encourage a deeper research on this type of additives with the objective of substituting the traditional oils in microelectronics

Oxidative chemical vapor deposition of polyaniline thin films

• Yuriy Y. Smolin,
• Masoud Soroush and
• Kenneth K. S. Lau

Beilstein J. Nanotechnol. 2017, 8, 1266–1276, doi:10.3762/bjnano.8.128

• in recent years for their use in solar cells [1][2][3][4][5][6], batteries [7], supercapacitors [8][9][10][11][12], sensors [13], biosensors [14], and microelectronics [15][16]. As devices continue to decrease in size, the integration of conducting polymers within nanomaterials using conventional