Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field

• Levente Máthé and
• Ioan Grosu

Beilstein J. Nanotechnol. 2020, 11, 225–239, doi:10.3762/bjnano.11.17

• interacting QD connected to electrodes of massless Dirac fermions in the zero-bias voltage limit [36][37]. The zero-bias conductance plots reveal an impurity quantum phase transition between the Kondo and local moment regimes. Furthermore, the thermopower changes its sign when the temperature approaches the

Review of advanced sensor devices employing nanoarchitectonics concepts

• Katsuhiko Ariga,
• Tatsuyuki Makita,
• Masato Ito,
• Taizo Mori,
• Shun Watanabe and
• Jun Takeya

Beilstein J. Nanotechnol. 2019, 10, 2014–2030, doi:10.3762/bjnano.10.198

• nanostructured materials with exotic properties [198] undoubtedly have important contributions. In addition, mass-sensitive sensors, quartz and crystal microbalance [199] are are useful for many substances because mass changes and alteration of viscoelasticity such as phase transition [200] are common over all

First principles modeling of pure black phosphorus devices under pressure

• Ximing Rong,
• Zhizhou Yu,
• Zewen Wu,
• Junjun Li,
• Bin Wang and
• Yin Wang

Beilstein J. Nanotechnol. 2019, 10, 1943–1951, doi:10.3762/bjnano.10.190

• transition under axial strain [5][32]. The sensitivity to and the resilience against strain make BP an ideal material for strain-sensing electronics and flexible electronic devices. Xiao et al. fabricated few-layer BP nanosheets by chemical vapor transport [25], and observed a phase transition from an

• relaxed BP show qualitatively consistent behaviors of bandgap variation and even the same phase transition points, although the bandgap energy of the fully relaxed BP decreases faster when RC increases from 10% to 25%. Conductance of pure BP devices under pressure In this subsection, we show the pressure

• explains the continuous decrease of conductance versus RC. While for the zigzag BP devices, the simultaneous decrease of ΔEC and ΔEC induces a roughly invariant conductance when RC is less than 15%. When RC is equal to 30%, ΔEV and ΔEC are zero because a semiconductor–metal phase transition occurs for the

Microfluidic manufacturing of different niosomes nanoparticles for curcumin encapsulation: Physical characteristics, encapsulation efficacy, and drug release

• Mohammad A. Obeid,
• Ibrahim Khadra,
• Abdullah Albaloushi,
• Margaret Mullin,
• Hanin Alyamani and
• Valerie A. Ferro

Beilstein J. Nanotechnol. 2019, 10, 1826–1832, doi:10.3762/bjnano.10.177

• hydrophilic–lipophilic balance (HLB), and the phase transition temperature (Tc) of the surfactant in the niosomes formulation would significantly affect the encapsulation efficiency for different drugs [22]. Here, two different types of non-ionic surfactants were used in the preparation of niosomes for

Magnetic segregation effect in liquid crystals doped with carbon nanotubes

• Danil A. Petrov,
• Pavel K. Skokov,
• Alexander N. Zakhlevnykh and
• Dmitriy V. Makarov

Beilstein J. Nanotechnol. 2019, 10, 1464–1474, doi:10.3762/bjnano.10.145

• -order phase transition, and with κ < κ* to the first-order phase transition. In the case of absolutely rigid anchoring of CNTs with the NLC molecules, Equation 19 takes the form Note that (Equation 15) allows us to determine only the fields of the second-order orientational transitions. Let us find the

• straight lines show the first-order phase transition. The calculations were carried out for σ = 5, γ = 0.2, k = 1.5 and various values of the segregation parameter κ. The orientation phase diagram for the selected parameters is shown in Figure 2. The value of the second-order transition field hc = 2.824

• , which corresponds to the first-order phase transition. In the case of weak segregation (curves 2 and 3 in Figure 7), distortions in the orientation structure of NLC–CNT mixture appear continuously and increase with increasing magnetic field. Conclusion We have studied the influence of magnetic

Photoactive nanoarchitectures based on clays incorporating TiO₂ and ZnO nanoparticles

• Eduardo Ruiz-Hitzky,
• Pilar Aranda,
• Marwa Akkari,
• Nithima Khaorapapong and
• Makoto Ogawa

Beilstein J. Nanotechnol. 2019, 10, 1140–1156, doi:10.3762/bjnano.10.114

• NPs grew from 6 to 18 nm during calcination at 500–700 °C with a phase transition from anatase to rutile taking place at ca. 650 °C [96]. Layered silicates, such as kaolinite and montmorillonite, also stabilize the formation of ZnO NPs (Figure 2A) from zinc cyclohexanebutyrate hydrolyzed in dimethyl

Trapping polysulfide on two-dimensional molybdenum disulfide for Li–S batteries through phase selection with optimized binding

• Sha Dong,
• Xiaoli Sun and
• Zhiguo Wang

Beilstein J. Nanotechnol. 2019, 10, 774–780, doi:10.3762/bjnano.10.77

• transformation of 2H→1T' has been widely studied [26][27][28]. The fundamental mechanisms of this structural transformation are governed by electron transfer [26], so the phase transition can be initiated by treatment with n-butyllithium (n-BuLi) [27], intercalation of alkali-metal ions [29][30], substitution of

Enhancement in thermoelectric properties due to Ag nanoparticles incorporated in Bi₂Te₃ matrix

• Srashti Gupta,
• Dinesh Chandra Agarwal,
• Bathula Sivaiah,
• Sankarakumar Amrithpandian,
• Kandasami Asokan,
• Ajay Dhar,
• Binaya Kumar Panigrahi,
• Devesh Kumar Avasthi and
• Vinay Gupta

Beilstein J. Nanotechnol. 2019, 10, 634–643, doi:10.3762/bjnano.10.63

• temperature which may be attributed to bipolar diffusion [25][26] and phase transitions [27][28]. In the chalcogenide AgBiSe2, there is an exchange of Ag and Bi atoms in the lattice during the phase transition from rhombohedral to cubic that results in the change from p-type to n-type behavior. The exchange

• of Ag and Bi atoms results in a quasi-metallic state that contributes more conduction electrons, and results in a change from p-type to n-type conduction [27]. A similar work has shown a change in the Seebeck coefficient of AgCuS along with a change in conduction during the phase transition from

• (n+, n−). On further increasing the temperature electrons become the majority carriers (n-type) [25]. Another reason for a p–n-type transition is Ge substituting Bi/Te in Bi2Te3 [26]. Our XRD does not show any phase transition. Hence, we suppose that only bipolar diffusion is the cause for the

Sub-wavelength waveguide properties of 1D and surface-functionalized SnO₂ nanostructures of various morphologies

• Venkataramana Bonu,
• Binaya Kumar Sahu,
• Arindam Das,
• Sankarakumar Amirthapandian,
• Sandip Dhara and
• Harish C. Barshilia

Beilstein J. Nanotechnol. 2019, 10, 379–388, doi:10.3762/bjnano.10.37

• thermodynamically by considering the Gibbs energy as a measure of structural phase transformation [8]. During VLS growth, the formation of nucleation from the saturated catalyst (Au) is the important step for the shape and structure. As reported earlier, the difference in the Gibbs energy promotes the phase

• transition between two competing phases at the nucleation stage itself and is found to control square and cylindrical shapes [8]. Considering a rectangular shape nucleus for square-shaped NWs (Figure 5a) and a circular-shaped nucleus for cylindrical NWs (Figure 5b), the difference in Gibbs free energy can be

Threshold voltage decrease in a thermotropic nematic liquid crystal doped with graphene oxide flakes

• Mateusz Mrukiewicz,
• Krystian Kowiorski,
• Paweł Perkowski,
• Rafał Mazur and
• Małgorzata Djas

Beilstein J. Nanotechnol. 2019, 10, 71–78, doi:10.3762/bjnano.10.7

• dielectric spectroscopy measurements. The effect is related to the disrupted planar alignment due to the strong π–π stacking between the 5CB’s benzene rings and the graphene oxide’s structure. Additionally, we present the GO concentration dependence on the isotropic–nematic phase transition temperature

• 4-cyano-4′-pentylbiphenyl (5CB) was doped with low concentrations (0.05–0.3 wt %) of GO flakes. We found that using the GO flakes we are able to reduce the threshold voltage in the Frédericksz effect. We report and discuss the isotropic–nematic phase transition temperature, splay elastic constant

• University of Technology, Warsaw, Poland. It is a room temperature nematic liquid crystal material of high chemical stability. The phase transition from the isotropic phase to the nematic phase and then to the crystalline phase is at 35 °C and 18 °C, respectively [34][35][36]. Pentylcyanobiphenyl (5CB) has a

Hydrogen-induced plasticity in nanoporous palladium

• Markus Gößler,
• Eva-Maria Steyskal,
• Markus Stütz,
• Norbert Enzinger and
• Roland Würschum

Beilstein J. Nanotechnol. 2018, 9, 3013–3024, doi:10.3762/bjnano.9.280

• hydrogen-induced phase transition from PdHβ to PdHα is found to enable internal-stress plasticity (or transformation-mismatch plasticity) in nanoporous palladium, which leads to exceptionally high strains without fracture as a result of external forces. The high surface stress in the nanoporous structure

• palladium-hydride phase transition, as the concept is of utmost importance for the mechanical behaviour of npPd. Current understanding of palladium-hydride phase transitions The nature of the phase transition in palladium hydride crucially depends on both sample dimensions and the rate of hydrogen uptake

• proceed incoherently, inducing dislocations to reduce internal stresses [34]. A coherent phase transition on the other hand involves the occurrence of internal stresses due to spatial variations of the lattice spacing, while no dislocations are induced. Therefore, particles must be sufficiently small in

Near-infrared light harvesting of upconverting NaYF₄:Yb³⁺/Er³⁺-based amorphous silicon solar cells investigated by an optical filter

• Daiming Liu,
• Qingkang Wang and
• Qing Wang

Beilstein J. Nanotechnol. 2018, 9, 2788–2793, doi:10.3762/bjnano.9.260

• XRD results revealed the morphology and a phase transition from cubic to hexagonal NaYF4. Photoluminescence spectra indicated that the hexagonal NaYF4:Yb3+/Er3+ nanorods convert near-infrared light of 980 nm to the visible light with wavelength peaks at 654, 541 and 522 nm. Hence, the upconverting

• phase transition is completed after 12 h. In Figure 1c, energy-dispersive X-ray (EDX) analysis confirms the doping with Yb and Er. The molar ratio of Y/Yb/Er in the hexagonal phase NaYF4:Yb3+/Er3+ was determined to be 79.8:18.2:2. It is extremely close to the stoichiometric ratio of 80:18:2 of the most

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• )1−x(MnSb)x films with x = 0.41 and thickness d = 120–135 nm. Electron microscopy data suggests that studied films have single-phase columnar structure in the volume. It was found that annealing process induces a phase transition of hexagonal GaSb matrix into a cubic matrix. AFM and MFM studies

• microanalysis showed a slight (2–3%) decrease of Mn content in the film volume after annealing. This can be related to the details of sample preparation (e.g., the presence of a thicker damaged layer on the surface) or to the diffusion of Mn atoms. Thus, we can conclude that film annealing causes a phase

• transition of the hexagonal GaSb matrix to a cubic matrix. The electron microscopy data unambiguously shows that the columnar microstructure of the film persists up to almost the surface layers. It should be noted, that no signs of second-phase precipitates in the film volume was observed. In particular

Pinning of a ferroelectric Bloch wall at a paraelectric layer

• Vilgelmina Stepkova and
• Jiří Hlinka

Beilstein J. Nanotechnol. 2018, 9, 2356–2360, doi:10.3762/bjnano.9.220

• layer could be easily switched with a 0.5 kV/mm electric field, as is apparent from the quasistatic hysteresis loop shown in Figure 8 (see below). In fact, the thickness of the SrTiO3 layer can be tuned in a way that the wall passing through there is effectively in the state just below the phase

• transition from the Bloch to the Ising state. Then, as the domain wall passes through such a paraelectric layer, it should easily acquire the Pt component favored by even quite a moderate Et electric bias. Thus, ferroelectric Bloch domain walls are shown to be ideal nanoscale objects with switchable

Nanotribology

• Enrico Gnecco,
• Susan Perkin,
• Andrea Vanossi and
• Ernst Meyer

Beilstein J. Nanotechnol. 2018, 9, 2330–2331, doi:10.3762/bjnano.9.217

• , different authors have modeled the influence of electrical double layers on hydrodynamic lubrication [6], the occurrence of a second-order phase transition in ultrathin lubricant films [7] and the velocity dependence of dry friction on crystal surfaces at the atomic scale [8]. While many experimental

Interaction-induced zero-energy pinning and quantum dot formation in Majorana nanowires

• Samuel D. Escribano,
• Alfredo Levy Yeyati and
• Elsa Prada

Beilstein J. Nanotechnol. 2018, 9, 2171–2180, doi:10.3762/bjnano.9.203

• presence of these states is a consequence of the renormalization of the topological phase transition due to the electrostatic potential (either or ): which is not constant along the wire because (or ) depend on x. For the shown values of VZ, only the central part of the wire is in the topological regime

Recent highlights in nanoscale and mesoscale friction

• Andrea Vanossi,
• Dirk Dietzel,
• Andre Schirmeisen,
• Ernst Meyer,
• Rémy Pawlak,
• Thilo Glatzel,
• Marcin Kisiel,
• Shigeki Kawai and
• Nicola Manini

Beilstein J. Nanotechnol. 2018, 9, 1995–2014, doi:10.3762/bjnano.9.190

• structural phase transition in frustrated systems [39], from a free-sliding arrangement of the chain to a pinned fractal-like atomic configuration [82][150]. Compared to standard experimental tribology techniques with inherent limitations of the dynamic range, time resolution, and control at the single-atom

• on the system parameters. For small substrate corrugation the network of solitons supports a free-sliding superlubric interface; with increasing corrugation the layer switches to a statically pinned configuration after crossing a well-defined, Aubry-like, dynamical and structural phase transition

A zero-dimensional topologically nontrivial state in a superconducting quantum dot

• Pasquale Marra,
• Alessandro Braggio and
• Roberta Citro

Beilstein J. Nanotechnol. 2018, 9, 1705–1714, doi:10.3762/bjnano.9.162

• discussion of the role of interactions on the 0D topological transition and on the ensuing π-phase will be addressed in a following research paper. Therefore, we will discuss hereafter only quantum phase transition in the regime of weak interactions in systems which can be described by Equation 7 or Equation

• specific values of the gauge-invariant phase φ = ±φ* where where |λ| < 1 if Bmin < |B| < Bmax. We will show that these gapless points define a topological phase transition in the system that corresponds to the appearance of discontinuous drops in the CPR of the junction. Figure 2 shows the single-particle

• quantum phase transition where the fermion parity of the ground state changes from trivial to nontrivial. Note that for |B| = Bmin and for |B| = Bmax (i.e., |λ| = 1) no topological transition occurs, and the system is, respectively, in the trivial or nontrivial gapped state with the exceptions of the

Josephson effect in junctions of conventional and topological superconductors

• Alex Zazunov,
• Albert Iks,
• Miguel Alvarado,
• Alfredo Levy Yeyati and
• Reinhold Egger

Beilstein J. Nanotechnol. 2018, 9, 1659–1676, doi:10.3762/bjnano.9.158

• field, which drives the TS wire across the topological phase transition, we find that the critical current exhibits a kink-like feature that is mainly caused by a suppression of the Andreev state contribution in the topological phase. (iii) Yet another possibility is offered by junctions containing a

• value in Equation 35 for the topological phase transition also changes with μ. The results in Figure 8 assume that the local magnetic field B acting on the QD coincides with the bulk Zeeman field Vx in the TS wire, i.e., B = (Vx,0,0). For the rather large values of ΓS,TS taken in Figure 8, the Ic vs Vx

• critical current can here reach values close to the unitary limit, Ic ~ eΔ/. We note that since Bz does not drive a phase transition, no kink-like features appear for the Ic(Bz) curves shown in Figure 9. Finally, the inset of Figure 9 shows that for B perpendicular to Vx, where Vx > for the parameters

Robust topological phase in proximitized core–shell nanowires coupled to multiple superconductors

• Tudor D. Stanescu,
• Anna Sitek and
• Andrei Manolescu

Beilstein J. Nanotechnol. 2018, 9, 1512–1526, doi:10.3762/bjnano.9.142

• the value of the critical field associated with the topological quantum phase transition. Keywords: core–shell nanowires; Majorana states; multiple 1D chains; prismatic geometry; topological superconducting phase; Introduction The intense ongoing search for Majorana zero modes (MZMs) in solid states

• wire, but no clear evidence of a phase transition to the topological phase, as revealed by the closing of the bulk quasiparticle gap [10][11][12][13], or evidence of correlated features at the opposite ends of the wire [25]. Ideally, the MZMs are hosted by a one-dimensional (1D) p-wave superconductor

• superconductors with non-vanishing relative phases enhances the stability of the topological phase and lowers the critical magnetic field associated with the (lowest field) topological quantum phase transition. In principle the phase difference between superconductors can be achieved either by applying an

Predicting the strain-mediated topological phase transition in 3D cubic ThTaN₃

• Chunmei Zhang and
• Aijun Du

Beilstein J. Nanotechnol. 2018, 9, 1399–1404, doi:10.3762/bjnano.9.132

• approximately 1 eV [1]. Pressure can induce a phase transition from c-PV to o-PV and PPV accompanied by the transition from a moderate band gap semiconductor (≈1 eV band gap in c-PV) to a small band gap semiconductor (PPV) in ThTaN3 [1]. c-PV ThTaN3 has also been proposed as a potential ground for studying

• limited and mainly focused on pressure-induced phase transition [3]. Therefore, a systematic study of the electron structure of ThTaN3 in a certain phase is highly desired. Topological insulators (TIs) have attracted much attention due to their distinct quantum mechanical properties, which makes them

• external strain. All these materials possess heavy elements and the strong SOC can induce a band inversion, which is a typical mechanism for TIs [26][27]. The experimentally observed pressure-induced phase transition in ThTaN3 indicates that the electronic structure of 3D ThTaN3 is likely very sensitive to

Electrostatically actuated encased cantilevers

• Benoit X. E. Desbiolles,
• Gabriela Furlan,
• Adam M. Schwartzberg,
• Paul D. Ashby and
• Dominik Ziegler

Beilstein J. Nanotechnol. 2018, 9, 1381–1389, doi:10.3762/bjnano.9.130

• , electrostatic excitation (Figure 2b) results in a clean Lorentzian resonance peak with a smooth 180° phase transition. The resonance matches the thermal peak shown in Figure 2c. By fitting a harmonic oscillator model to the thermal peak (fit shown in green), we find a resonance frequency of f0 = 347.530 kHz

• excitation gives a clean resonance peak at f0 = 347.530 kHz, with a phase transition from 0° to 180°, and no spurious peaks over the entire frequency range (0 to 500 kHz). c) By fitting a simple harmonic oscillator model to the thermal power spectral density, one calculates resonance frequency, Q-factor and

Interplay between pairing and correlations in spin-polarized bound states

• Szczepan Głodzik,
• Aksel Kobiałka,
• Anna Gorczyca-Goraj,
• Andrzej Ptok,
• Grzegorz Górski,
• Maciej M. Maśka and
• Tadeusz Domański

Beilstein J. Nanotechnol. 2018, 9, 1370–1380, doi:10.3762/bjnano.9.129

• near to the singlet–doublet phase transition. Keywords: bound states in superconductors; Majorana quasiparticles; subgap Kondo effect; Introduction Magnetism is usually detrimental to superconductivity because it breaks the Cooper pairs (at the critical field strength Hc2). There are, however, a few

• between the opposite spin electrons can bring additional important effects. In the proximitized quantum dots it can lead to a parity change (quantum phase transition) with further influence on the subgap Kondo effect (driven by effective spin-exchange coupling with mobile electrons). Furthermore, such

• Figure 1), signaling a first-order phase transition [28][29][30]. This quantum phase transition at Jc is an artifact of the classical spin approximation. When spin fluctuations are allowed, a Kondo-like crossover is obtained instead of a first-order phase transition [31][32]. In general, the

Disorder-induced suppression of the zero-bias conductance peak splitting in topological superconducting nanowires

• Jun-Tong Ren,
• Hai-Feng Lü,
• Sha-Sha Ke,
• Yong Guo and
• Huai-Wu Zhang

Beilstein J. Nanotechnol. 2018, 9, 1358–1369, doi:10.3762/bjnano.9.128

• the transport properties of a topological superconducting wire hosting a pair of MBSs. Although the disorder-modulated phase transition in this system has been widely discussed [43][62][63][64][65][66][67][68][69][70][71][72][73][74], we focus on the transport properties, especially the splitting of

• , when VZ is relatively small, the system stays in the topologically trivial phase, and the lowest energy is linearly suppressed as the magnetic field strength increases. Without disorder in the system, the nanowire is driven into a topological superconducting phase when we tune VZ to exceed the phase

• transition point and EM begins to oscillate near the zero value. This behavior, originating from the finite-size effects, is absent in a long enough wire, where the field-independent exact Majorana zero mode emerges with its energy pinned to zero. For disordered wires, we find that the exact Majorana zero

Andreev spectrum and supercurrents in nanowire-based SNS junctions containing Majorana bound states

• Jorge Cayao,
• Annica M. Black-Schaffer,
• Elsa Prada and
• Ramón Aguado

Beilstein J. Nanotechnol. 2018, 9, 1339–1357, doi:10.3762/bjnano.9.127

• disappear when μ acquires very large values, namely, in the Andreev approximation. At B = Bc, the energy spectrum exhibits the closing of the low-momentum gap Δ1, as indicated by red dash-dot line in Figure 4d. This indicates the topological phase transition, since two gapped topologically different phases