Solvent-induced assembly of mono- and divalent silica nanoparticles

• Bin Liu,
• Etienne Duguet and
• Serge Ravaine

Beilstein J. Nanotechnol. 2023, 14, 52–60, doi:10.3762/bjnano.14.6

• ), and sodium hydroxide (≥98%, pellets, Sigma-Aldrich) were used as received. Ultrapure water with a resistivity of 18.2 MΩ·cm at 25 °C obtained from a Milli-Q system (Millipore) was also systematically used. Absolute ethanol and tetrahydrofuran (>99%) were purchased from VWR Chemicals. Synthesis of

Upper critical magnetic field in NbRe and NbReN micrometric strips

• Zahra Makhdoumi Kakhaki,
• Antonio Leo,
• Federico Chianese,
• Loredana Parlato,
• Giovanni Piero Pepe,
• Angela Nigro,
• Carla Cirillo and
• Carmine Attanasio

Beilstein J. Nanotechnol. 2023, 14, 45–51, doi:10.3762/bjnano.14.5

• the electrical resistivity [6]. This feature is related to the polycrystalline or amorphous nature of these materials when deposited in a thin-film form [4][7][8]. In addition to the applicative interest, the study of these materials is relevant from a fundamental point of view. NbxRe1−x (NbRe) for

• is still lacking. Finally, while the morphological properties are similar to those of NbRe films [18], the values of the electrical resistivity stand slightly higher with respect to NbRe films [4][7][18]. The value of the upper critical magnetic field is a fundamental quantity that gives a measure of

• resistance at 10 K. Results and Discussion Figure 1 displays the normalized resistive transitions in zero magnetic field of the NbRe and NbReN microstrips. The critical temperature, the low-temperature resistivity, and the residual resistivity ratio (RRR) are reported for both microstrips in Table 1. The RRR

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• transmittance of 94% and increased the bandgap energy from 2.76 to 2.88 eV at 120 mJ. The annealing treatment decreased the resistivity from 15.63 × 10−4 to 1.73 × 10−4 Ω/cm−1. Additionally, the figure of merit of the ITO/Mo structure improved significantly from 6.63 × 10−4 Ω−1 of the as-deposited sample to

• to improve the performance of optoelectronic devices. One of these materials is indium tin oxide (ITO), which combines high transparency with high conductivity [7][8]. However, a single layer of as-deposited ITO shows a high resistivity. Consequently, inserting a very thin metal film layer can

• adherence to the substrate, very high thermal stability (up to 600 °C), and high electrical conductivity [14]. Over the last decades, the development of solar cells has grown dramatically. The cells have become larger, thinner, and lighter. This increases the electrical resistivity, which is undesirable

Enhanced electronic transport properties of Te roll-like nanostructures

• E. R. Viana,
• N. Cifuentes and
• J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

• nanostructures [11][12][13][14]. Te NTs have shown metallic character and decreasing electrical resistivity with temperature [11]. Te NWs encapsulated in boron nitride nanotubes have shown a large current-carrying capacity and p-type semiconducting characteristics, which can be reversed to n-type behavior after

• -nanostructure back-gate FETs, as well as the electrical resistivity of the nanostructures as a function of temperature from 5 to 400 K. The transport measurements were carried out in a low-noise custom-made system for electrical characterization of FET devices [16][17][18]. FET devices were built by laser

• = dIds/dVg is the transconductance, ρ is the resistivity, Cox is the gate capacitance, and e is the electron charge. For a flat nanostructure, the gate capacitance can be obtained by a simple parallel-plate approximation, given by Cox = ε0(εav)wL/dSiO2 and ρ = (R·w·t/L). Here, ε0 is the permittivity of

Hierarchical Bi₂WO₆/TiO₂-nanotube composites derived from natural cellulose for visible-light photocatalytic treatment of pollutants

• Zehao Lin,
• Zhan Yang and
• Jianguo Huang

Beilstein J. Nanotechnol. 2022, 13, 745–762, doi:10.3762/bjnano.13.66

• obtained from the Milli-Q Advantage A 10 system (Millipore, Bedford, MA, USA), displaying a resistivity of 18.2 MΩ·cm. Preparation of Bi2WO6/TiO2-NT nanocomposites The fabrication process of cellulose-derived Bi2WO6/TiO2-NT nanocomposites is exhibited in Figure 1. Ten layers of ultrathin titania film were

Nanoarchitectonics of the cathode to improve the reversibility of Li–O₂ batteries

• Hien Thi Thu Pham,
• Jonghyeok Yun,
• So Yeun Kim,
• Sang A Han,
• Jung Ho Kim,
• Jong-Won Lee and
• Min-Sik Park

Beilstein J. Nanotechnol. 2022, 13, 689–698, doi:10.3762/bjnano.13.61

• determined by a porosity analyzer (Micromeritics, Tristar II 3020). The electrical conductivity measurements were conducted by the four-point probe method using a power resistivity measurement system (MCP-PD51) at different applied pressures ranging from 5 to 20 kN. The thermal stability was examined by TGA

Tunable superconducting neurons for networks based on radial basis functions

• Andrey E. Schegolev,
• Nikolay V. Klenov,
• Sergey V. Bakurskiy,
• Igor I. Soloviev,
• Mikhail Yu. Kupriyanov,
• Maxim V. Tereshonok and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2022, 13, 444–454, doi:10.3762/bjnano.13.37

• number, T is the temperature, kB is Boltzmann’s constant, where H is the exchange energy (H = 0 in S and N layers). The indexes “l” and “r” denote the materials at, respectively, the left and right side of an interface, ξ is the coherence length, ρ is the resistivity of the material (in the following, ξ

• [61][62]: where ρS is the resistivity of the superconducting material, μ0 is the vacuum permeability and ℏ is Planck’s constant. For instance, for a homogeneous niobium film, the estimate for the constant λ0 is around 100 nm, while experimentally measured values of the screening length λ at T = 4.2 K

• , and the structure thickness is much smaller than the screening length. We propose a hybrid structure (see Figure 5) consisting of three parts, namely a pairing source, a spin valve, and a current-carrying layer of normal metal with low-resistivity. The general principle of operation is the following

A chemiresistive sensor array based on polyaniline nanocomposites and machine learning classification

• Jiri Kroutil,
• Alexandr Laposa,
• Ali Ahmad,
• Jan Voves,
• Vojtech Povolny,
• Ladislav Klimsa,
• Marina Davydova and
• Miroslav Husak

Beilstein J. Nanotechnol. 2022, 13, 411–423, doi:10.3762/bjnano.13.34

• coefficient. The resistivity of these nanocomposites depends on the p–n depletion layer width on the interface between the n-type nanoparticles and the surrounding p-type PANi molecules. Gas sensing analysis The gas sensing characterizations of sensitive layers were performed using a custom-built apparatus

• deformation of the polyaniline conjugation chains. The summary of the gas sensor responses for all active layers is shown in Figure 9. All layers show an increasing resistivity as a clear response to CO, CO2, NH3, and NO2. Additionally, to exclude the influence of humidity on the sensor signal, the sensor

• concentration due to PANI doping and the formation of charge transfer complexes [20]. The decrease of electrical resistance is caused by the greater mobility of the dopant ions, related to the development of PANI chains. Furthermore, the swelling effect contributes to the change in resistivity [21]. Statistical

Selected properties of Al_xZn_yO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target

• Witold Posadowski,
• Artur Wiatrowski,
• Jarosław Domaradzki and
• Michał Mazur

Beilstein J. Nanotechnol. 2022, 13, 344–354, doi:10.3762/bjnano.13.29

• a function of the distance from the target axis on both sides (front and back) of the substrate. The lowest measured resistivity was about 4 × 10−3 Ω·cm. Additionally, optical properties, surface topography, and elemental composition were determined in selected areas of the substrate. Keywords

• manufacturing transparent electrodes, the TCO films should have relatively low resistivity, ρTCO ≤ 10−3 Ω·cm, and optical transmittance, preferably over 80%, for films with thicknesses not exceeding 200 nm. In addition, parameters such as high resistance to mechanical exposure and good adhesion to the substrate

• of aluminum oxide in such targets is approximately 2% [6][7][8][9][10][11][12][13][14][15][16][17][18]. However, in research in which the objective was to obtain films with minimum resistivity, the alumina content was typically varied in the range of 1–6% [8][9][12]. AZO films have also been obtained

Controllable two- and three-state magnetization switching in single-layer epitaxial Pd_1−xFe_x films and an epitaxial Pd_0.92Fe_0.08/Ag/Pd_0.96Fe_0.04 heterostructure

• Igor V. Yanilkin,
• Amir I. Gumarov,
• Gulnaz F. Gizzatullina,
• Roman V. Yusupov and
• Lenar R. Tagirov

Beilstein J. Nanotechnol. 2022, 13, 334–343, doi:10.3762/bjnano.13.28

• resistivity returns to a common value of approx. 15.8 μΩ·cm, corresponding to the magnetic moment along the easy axes (see more details below). The resistivities hierarchy for the magnetic moment oriented along the X-, Y-, and Z-axes, ρx > ρy > ρz, is typical for ferromagnetic films of comparable thickness

• lying in the plane of the film and close to [110] (⟨110⟩) (approx. 38° relative to [100], see Figure 3b). In the following, we denote the measured resistivity by ρxy, ρxz, and ρyz, with the magnetic field applied in the XY-, XZ-, and YZ-planes, respectively. The angles are defined in the top insets in

• heterostructure can switch between P, OG, and AP steady magnetic configurations in the film plane by rotating the magnetic moment of the soft magnetic layer with respect to the magnetically harder layer. Dependence of the resistivity on the magnetic field at its different orientations, T = 5 K. The field is

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• used. All electrical measurements were made at controlled room temperature (23 °C) and humidity (30% RH) in ambient air. Results Electrical properties The resistivity of the thin film was determined to be 1 × 103 Ω·cm. The type of electrical conductivity was determined on the basis of the sign of the

Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

• Hiroya Tanaka,
• Shinya Ohno,
• Kazushi Miki and
• Masatoshi Tanaka

Beilstein J. Nanotechnol. 2022, 13, 172–181, doi:10.3762/bjnano.13.12

• oxidation on Si(113) using our VT-STM. Experimental The Si(113) sample used was a p-type (B-doped) wafer with a resistivity of 1–10 Ω·cm. Sacrificed oxidation was performed to produce the oxide with a thickness of 200 nm using an oxidation furnace. The sample was cut to 6.5 × 1.5 mm2, rinsed with acetone to

Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• . Keywords: chemical vapor deposition; chromium germanide; nanostructured materials; nanowire; resistivity; Introduction Metal silicides and germanides belong to an extensively studied group of materials offering a wide variety of properties to meet various requirements in battery, optical, and electronic

• effort to prepare a Cr/Ge deposit in a nanostructured form. Using chemical vapor deposition (CVD), we succeeded to synthesize deposits containing CrGex NWs. Their structure was elucidated and measurements of individual NWs were carried out to determine their electrical resistivity. Results and Discussion

• carbon–platinum composite using focused electron beam-induced deposition (FEBID) (Supporting Information File 1, Figure S10). The resistivity of the nanowire–deposit system was estimated to be 2.7 kΩ·cm (Figure 5). This value is significantly higher than the previously reported resistivity for nominally

In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures

• Olena M. Kapran,
• Roman Morari,
• Taras Golod,
• Evgenii A. Borodianskyi,
• Vladimir Boian,
• Andrei Prepelita,
• Nikolay Klenov,
• Anatoli S. Sidorenko and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 913–923, doi:10.3762/bjnano.12.68

• thinner S′ (6 nm) is smaller than that of the S1 ML with S′ (8 nm). Figure 1e shows Rxx(T) curves for a horizontal bridge at the S1 sample at four sequentially increasing magnetic field strengths (hard axis orientation) and Iac = 1 mA. It is seen that the onset of resistivity at T ≈ 7.3 K is affected by

• -linear flux-flow Hall effect Resistivity in type-II superconductors with sizes larger than the London penetration depth, λ, is caused by motion of Abrikosov vortices, that is, it has a flux-flow (FF) nature [50][51][52][53]. Since our micrometer-size bridges are significantly larger than λ ≈ 100 nm of Nb

• resistivity in our bridges, the observed unusual maximum in MR is likely caused by triggering of the FF phenomenon by domain stray fields, which change upon remagnetization of F-layers. The remarkable temperature variation of MR in Figure 2a–c is then primarily caused by the temperature variation of the

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• was used as absorber of the solar spectrum. Carrier concentration, mobility, and resistivity were 4.3 × 1015 cm−3, 270 cm2·V−1·s−1, and 5.3 Ω·cm, respectively. The silicon wafer was cut into small square pieces, ca. 1.5 × 1.5 cm2 in size. Samples were cleaned in acetone, iso-propanol, and twice in

• deposited as a low-resistivity ohmic contact via sputtering. To improve the contact parameters, the samples were annealed at 500 °C for 5 min in argon atmosphere via rapid thermal processing. Si/Al substrates were prepared in two different ways, A and B. On the surface of sample A, zinc oxide nanorods

Prediction of Co and Ru nanocluster morphology on 2D MoS₂ from interaction energies

• Cara-Lena Nies and
• Michael Nolan

Beilstein J. Nanotechnol. 2021, 12, 704–724, doi:10.3762/bjnano.12.56

• -quality, conformal thin films with low resistivity, to avoid many of the typical failure mechanisms such as electromigration [42][43]. This means that 3D migration of atoms (agglomeration) should be inhibited, while 2D growth (wetting) should be promoted. In contrast, in catalysis applications the ratio

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• flake from semiconducting to insulating at a dose of ca. 1 × 1015 ions/cm2 [25]. The dose-versus-resistivity plot from this work is shown in Figure 2a. Upon increasing the dose to ca. 1 × 1017 ions/cm2, the material became amorphous, and the conductivity behavior changed to metallic. This was attributed

High-yield synthesis of silver nanowires for transparent conducting PET films

• Gul Naz,
• Hafsa Asghar,
• Muhammad Ramzan,
• Muhammad Arshad,
• Rashid Ahmed,
• Muhammad Bilal Tahir,
• Bakhtiar Ul Haq,
• Nadeem Baig and
• Junaid Jalil

Beilstein J. Nanotechnol. 2021, 12, 624–632, doi:10.3762/bjnano.12.51

• represents the unit area of the film of 5 × 5 cm2. We measured the transmittance (T) at 576 nm and the sheet resistance (Rs) for all film samples prepared in this work. The sheet resistance (Rs) is commonly defined as the resistivity (ρ) of a sheet of material divided by its thickness (t): where V is the

Nanomechanics of few-layer materials: do individual layers slide upon folding?

• Ronaldo J. C. Batista,
• Rafael F. Dias,
• Ana P. M. Barboza,
• Alan B. de Oliveira,
• Taise M. Manhabosco,
• Thiago R. Gomes-Silva,
• Matheus J. S. Matos,
• Andreij C. Gadelha,
• Cassiano Rabelo,
• Luiz G. L. Cançado,
• Ado Jorio,
• Hélio Chacham and
• Bernardo R. A. Neves

Beilstein J. Nanotechnol. 2020, 11, 1801–1808, doi:10.3762/bjnano.11.162

• , we mention the recent development of an electromechanical device based on a water-induced electromechanical response in suspended graphene atop a microfluidic channel. The resistivity of the graphene membrane rapidly decreases by approx. 25% upon water injection into the channel due to the reduction

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• lightly doped n-type epitaxial silicon layer is, then, grown on top of the buried layer using chemical vapour deposition. The targeted epitaxial layer thickness is 7.5 µm with a resistivity of 12 Ω·cm. The anode of the diode is formed by a 30 µm diameter p+ layer, also made by the implantation and

Direct observation of the Si(110)-(16×2) surface reconstruction by atomic force microscopy

• Tatsuya Yamamoto,
• Ryo Izumi,
• Kazushi Miki,
• Takahiro Yamasaki,
• Yasuhiro Sugawara and
• Yan Jun Li

Beilstein J. Nanotechnol. 2020, 11, 1750–1756, doi:10.3762/bjnano.11.157

• keep the frequency shift constant. When the imaging became unstable, a bias voltage was applied between the tip and sample to eliminate the electrostatic force between the tip and sample. As a sample, p-doped Si(110) with a resistivity of 1–5 Ω·cm was used, which was cleaned by cycles of flushing at

Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

• Shaimaa Elyamny,
• Elisabetta Dimaggio and
• Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

• on one-pot metal-assisted chemical etching (MACE) [22] (Figure 1). Silicon chips of roughly 1 × 1 cm2 have been cut from n-doped (phosphorous) commercial silicon ⟨100⟩ wafers with a nominal resistivity of 10 Ω·cm (nominal doping concentration 1015 cm−3). The chips, mounted on a custom-made apparatus

• the substrate remains slightly doped, with a nominal resistivity of 10 Ω·cm. The result is a leg of a silicon-based thermoelectric generator, as shown in Figure 1. Measurement of the thermal conductivity and of the Seebeck coefficient Single-leg thermoelectric generators have been characterized with a

• different values of the doping process parameters (doping temperature and time). The results are S = −0.88 mV/K for the undoped sample (nominal resistivity 10 Ω·cm, estimated doping concentration 1015 cm−3), S = −0.41 mV/K for the sample doped at 700 °C for 10 min, and S = −0.20 mV/K for the sample doped at

Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• unpredictable programming feature in phase-change memory devices can be utilized in hardware security applications. Keywords: amorphous materials; drift; electrical breakdown; electrical resistivity; phase-change memory; pulse measurement; stochastic processes; threshold switching; Introduction Phase-change

• memory (PCM) is an emerging non-volatile memory technology with high endurance, high speed, and good scalability. PCM relies on the change in phase of a nanoscale volume of a chalcogenide material sandwiched between two electrodes. The phase of the material can be switched between the high-resistivity

• state (amorphous or reset) and the low-resistivity (crystalline or set) state by appropriate electrical pulses. The amorphization (or reset) process in PCM is achieved with a short and abrupt electrical pulse, which melt-quenches the active region [1]. PCM nanodevices exhibit significant cell-to-cell

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• Optics, Germany). An Ag2S/Si photodetector was prepared by depositing a Ag2S layer on the front side of a silicon substrate through a mask by drop-casting. A single-crystal p-type silicon (111) substrate with an electrical resistivity of 3–5 Ω·cm and a thickness of 300 μm was used. As shown in Figure 2

• decrease in the electrical resistivity of Ag2S. Figure 12 illustrates the I–V characteristics under illumination of the heterojunctions at reverse bias. The photocurrent of the heterojunction increased from 460 to 1500 μA at 7.5 V after CTAB was added to the Tu solution. This result can be ascribed to the