Transport characteristics of a silicene nanoribbon on Ag(110)

• Ryoichi Hiraoka,
• Chun-Liang Lin,
• Kotaro Nakamura,
• Ryo Nagao,
• Maki Kawai,
• Ryuichi Arafune and
• Noriaki Takagi

Beilstein J. Nanotechnol. 2017, 8, 1699–1704, doi:10.3762/bjnano.8.170

• broken, indicating the conductance of the SiNR is almost comparable to a metallic nanowire. The resistance of a silicene field effect transistor (FET) is estimated to be about 40 kΩ from the drain current measured as a function of the drain voltage [24]. The sheet resistance of multilayer silicene sheets

Process-specific mechanisms of vertically oriented graphene growth in plasmas

• Subrata Ghosh,
• Shyamal R. Polaki,
• Niranjan Kumar,
• Sankarakumar Amirthapandian,
• Mohamed Kamruddin and
• Kostya (Ken) Ostrikov

Beilstein J. Nanotechnol. 2017, 8, 1658–1670, doi:10.3762/bjnano.8.166

• and the substrate, and (c) increasing the discharge power. The correlation between the wetting characteristics, morphology and structural quality is established. It is also demonstrated that morphology, crystallinity, wettability and sheet resistance of the VGNs can be varied while maintaining the

• increased intersheet spacing between VGNs. The contact angle is found to vary from 127° to 134° for the other studied samples. The improvement in hydrophobicity is significant and can be considered for many useful applications. Electrical properties The sheet resistance of VGNs was measured to study their

• electrical properties. The linear current–voltage relationship from the four-probe resistance measurement confirms the ohmic behavior of all the studied samples (Figure 10). The NG film, grown at 600 °C, is also found to be electrically conducting with a sheet resistance of 5.6 kΩ/sq. The sheet resistance of

Group-13 and group-15 doping of germanane

• Nicholas D. Cultrara,
• Maxx Q. Arguilla,
• Shishi Jiang,
• Chuanchuan Sun,
• Michael R. Scudder,
• R. Dominic Ross and
• Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

• of water-activation of dopants on the surface. Only Ga-doped germanane remains activated under vacuum, and also exhibits minimal hysteretic behavior while the sheet resistance is reduced by more than four orders of magnitude. These Ga- and As-doped germanane materials start to oxidize after one to

• and As are likely to act as p-type and n-type dopants, respectively. I–V measurements were carried out with a direct probe contact to each metal pad, and measured in a range of −5 to 5 V. 20–30 devices were fabricated for each doping concentration. Each measurement was normalized to a sheet resistance

• for the device measured under vacuum in Figure 5c shows ohmic contact behavior, with a typical sheet resistance of 9.5 × 1010 Ω/sq. The I–V behavior when measured in H2O-containing atmosphere such as air, is highly hysteretic, non-ohmic, and with much higher current. Previously, we had shown that for

Growth, structure and stability of sputter-deposited MoS₂ thin films

• Reinhard Kaindl,
• Bernhard C. Bayer,
• Roland Resel,
• Thomas Müller,
• Viera Skakalova,
• Gerlinde Habler,
• Rainer Abart,
• Alexey S. Cherevan,
• Dominik Eder,
• Maxime Blatter,
• Fabian Fischer,
• Jannik C. Meyer,
• Dmitry K. Polyushkin and
• Wolfgang Waldhauser

Beilstein J. Nanotechnol. 2017, 8, 1115–1126, doi:10.3762/bjnano.8.113

• gate voltage for all measured films, when sweeping from −20 V to +20 V. The lack of any response to the gate voltage is inconsistent with the expected semiconducting behaviour of MoS2. The relatively low sheet resistance values measured here are inconsistent with the expected off-state of

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

• Massimiliano Lucci,
• Ivano Ottaviani,
• Matteo Cirillo,
• Fabio De Matteis,
• Roberto Francini,
• Vittorio Merlo and
• Ivan Davoli

Beilstein J. Nanotechnol. 2017, 8, 539–546, doi:10.3762/bjnano.8.58

• during the sputtering process. Under these conditions, we obtained films with different superconducting transition temperatures (Tc) ranging from 9.0 to 15.5 K. The room-temperature sheet resistance (resistivity per unit thickness) of the AlN films was also measured by using the four-probe technique

• film. In Figure 6 we plot the sheet resistance of the deposited AlN films as a function of the composition of the N2/Ar mixture and of the N2/Ar peak ratio. We choose from Figure 5 the peaks with high intensity that were also very responsive to the gas variations of the gas flux (Ar and N2 peaks at 750

• nm and 660 nm, respectively). The spectral lines of Ar and N2 should be close enough to be simultaneously visualized on the spectrometer display. It is impossible to measure the sheet resistance of a highly insulating film. However, we estimated that when the peak ratio of N2/Ar is close to 2.63 the

In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS₂ in O₂-controlled atmosphere

• Aurora Piazza,
• Filippo Giannazzo,
• Gianpiero Buscarino,
• Gabriele Fisichella,
• Antonino La Magna,
• Fabrizio Roccaforte,
• Marco Cannas,
• Franco Mario Gelardi and
• Simonpietro Agnello

Beilstein J. Nanotechnol. 2017, 8, 418–424, doi:10.3762/bjnano.8.44

• and the energy of the Fermi level evidenced that doping of graphene is an important aspect for electronic devices. The possibility to obtain stable p- or n-type doping in order to modulate the Gr sheet resistance for specific electronic and optoelectronic applications is mandatory for technical

Performance of natural-dye-sensitized solar cells by ZnO nanorod and nanowall enhanced photoelectrodes

• Saif Saadaoui,
• Mohamed Aziz Ben Youssef,
• Moufida Ben Karoui,
• Rached Gharbi,
• Emanuele Smecca,
• Vincenzina Strano,
• Salvo Mirabella,
• Alessandra Alberti and
• Rosaria A. Puglisi

Beilstein J. Nanotechnol. 2017, 8, 287–295, doi:10.3762/bjnano.8.31

• the ZnO NR layers on FTO, they were annealed in O2, FG and N2 gas at 300 °C. As shown in Table 1, the sheet resistance of the ZnO NRs depends on the used annealing gas. By using O2, we obtained the highest sheet resistance with a ratio of 103 compared to those prepared under N2 or FG. The best sheet

• . [26]. We also noticed that the increase of the temperature treatment from 200 °C to 300 °C in FG maintains the same sheet resistance of the NW layer at 5.3 Ω/sq. However, the short circuit current density of the cell decreases from 1.70 × 10−2 mA/cm2 to 8.02 × 10−3 mA/cm2. This decrease can be

• smaller variation of 5% in the FF as compared to the cell annealed at 300 °C using a TiO2 blocking layer as shown in Figure 11. This increase can be explained by the high variation in the sheet resistance of the ZnO NWs in the photoanode side [28]. For the NR-based photoanode cells, we annealed using

Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

• Filippo Giannazzo,
• Gabriele Fisichella,
• Aurora Piazza,
• Salvatore Di Franco,
• Giuseppe Greco,
• Simonpietro Agnello and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28

• -resistance Ron, which can be expressed as: where RC is the source and drain contact resistance and Rch the channel sheet resistance, which depends inversely on (VG−Vth), according to Equation 2. Figure 7a reports the plots of Ron vs 1/(VG−Vth,lin) extracted from the ID−VDS characteristics in Figure 6 at the

Sb₂S₃ grown by ultrasonic spray pyrolysis and its application in a hybrid solar cell

• Erki Kärber,
• Atanas Katerski,
• Ilona Oja Acik,
• Arvo Mere,
• Valdek Mikli and
• Malle Krunks

Beilstein J. Nanotechnol. 2016, 7, 1662–1673, doi:10.3762/bjnano.7.158

• to grow the Sb2S3 layer onto a structured substrate such as a ZnO nanorod layer. Experimental Technology of layers and solar cells We used a commercial 300 nm indium tin oxide (ITO) coated 1.1 mm glass with a sheet resistance of 10 Ω·sq.−1 from Zentrum für Sonnenenergie- und Wasserstoff-Forschung

The effect of dry shear aligning of nanotube thin films on the photovoltaic performance of carbon nanotube–silicon solar cells

• Benedikt W. Stolz,
• Daniel D. Tune and
• Benjamin S. Flavel

Beilstein J. Nanotechnol. 2016, 7, 1486–1491, doi:10.3762/bjnano.7.141

• increases and the surface nanotubes thus contribute more to the overall absorbance of the film. The sheet resistance of the films varies with thickness as shown in Figure 2c. Taking into account the log resistance scale, there are two main regions below and above T550 = 85–90%, corresponding to the

• resistance, Rsheet, of the films was marginally increased after DSA, which is made clearer when considering the DC electrical to optical conductivity ratio, σOP/σDC (Figure 2d), calculated as per Equation 2 [45], which takes into account the sheet resistance and the (isotropic) transmittance and where μ0 and

• counterparts. The reasons for the poorer performance are not immediately obvious. Although there is a clear difference in the sheet resistance, and thus DC electrical to optical conductivity ratio, it does not appear to be large enough to account for the observed difference in performance. Indeed, the two

Synthesis and applications of carbon nanomaterials for energy generation and storage

• Marco Notarianni,
• Jinzhang Liu,
• Kristy Vernon and
• Nunzio Motta

Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17

• transparent (from 80% to 90%) with high sheet resistance (from 8 to 5 kΩ) [88][90]. The increased sheet resistance is due to damage caused by the sonication during exfoliation. For these reasons, electrochemical exfoliation methods have recently been employed to produce better quality graphene with a faster

• min with voltages varying from 4–10 V. The final graphene flakes produced are usually employed to make a thin film transparent electrode with a sheet resistance of 210 Ω/sq with 96% transparency [96] or to make thin film supercapacitors with capacitance values of over 1 mF/cm2 [97]. Chemical or

• functional groups. From an electronic point of view, the GO, as synthesized, is typically insulating and has a high sheet resistance around 1012 Ω/sq [103]. This intrinsic insulating nature is strongly related to the amount of C–O–C and C=O groups in this material. However, chemical and thermal treatments

Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

• Kuang-Yang Kou,
• Yu-En Huang,
• Chien-Hsun Chen and
• Shih-Wei Feng

Beilstein J. Nanotechnol. 2016, 7, 75–80, doi:10.3762/bjnano.7.9

• Research Labs, Industrial Technology Research Institute, Hsinchu, Taiwan 10.3762/bjnano.7.9 Abstract The interplay of surface texture, strain relaxation, absorbance, grain size, and sheet resistance in textured, boron-doped ZnO (ZnO@B), transparent conductive oxide (TCO) materials of different thicknesses

• textured, ZnO@B TCO grown by LPCVD for thin-film solar cell applications is yet to be explored. This study reports the lattice strain relaxation, absorbance, and sheet resistance of textured ZnO TCO@B for solar cell applications. A thicker ZnO@B film enhances the strain relaxation, resulting in an

• increased surface texture, stronger absorbance, larger grain size, and lower sheet resistance. The optimization of the TCO layer could be useful for enhancing the performance of solar cells. Results and Discussion Structural characterization Four ZnO@B samples with 20-, 40-, 60-, and 70-minute growth times

Charge injection and transport properties of an organic light-emitting diode

• Peter Juhasz,
• Juraj Nevrela,
• Michal Micjan,
• Miroslav Novota,
• Jan Uhrik,
• Lubica Stuchlikova,
• Jan Jakabovic,
• Ladislav Harmatha and
• Martin Weis

Beilstein J. Nanotechnol. 2016, 7, 47–52, doi:10.3762/bjnano.7.5

• transport properties of OLED devices has been done on the organic double-layer sandwiched between two electrodes ITO/α-NPD/Alq3/Al. The devices were grown on glass slides precoated with ITO with sheet resistance lower than 10 Ω/sq. The substrates were cleaned sequentially in ultrasonic bath by isopropanol

Nitrogen-doped graphene films from chemical vapor deposition of pyridine: influence of process parameters on the electrical and optical properties

• Andrea Capasso,
• Theodoros Dikonimos,
• Francesca Sarto,
• Alessio Tamburrano,
• Giovanni De Bellis,
• Maria Sabrina Sarto,
• Giuliana Faggio,
• Angela Malara,
• Giacomo Messina and
• Nicola Lisi

Beilstein J. Nanotechnol. 2015, 6, 2028–2038, doi:10.3762/bjnano.6.206

• production of high-quality graphene for electronics is probably chemical vapor deposition (CVD). By this technique it is possible to produce graphene with large grain sizes and high crystalline quality over large areas [14]. Nonetheless, the sheet resistance of most CVD-graphene films (even in single-crystal

• transparent conductive electrodes Sheet resistance and optical transmittance The graphene films were analyzed by atomic force microscopy (AFM) to investigate their morphology and evaluate their thickness (Figure 4). The films were found to uniformly adhere on the Si/SiO2 surface. Occasionally, some folded

• is the main parameter dictating the characteristics of the pyridine-CVD graphene films, as also observed for the optical properties and the thickness of the films. At each temperature, the sheet resistance is observed to sweep over a narrow range of values when adding the two different hydrogen flows

Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte

• Sanghoon Ji,
• Waqas Hassan Tanveer,
• Wonjong Yu,
• Sungmin Kang,
• Gu Young Cho,
• Sung Han Kim,
• Jihwan An and
• Suk Won Cha

Beilstein J. Nanotechnol. 2015, 6, 1805–1810, doi:10.3762/bjnano.6.184

• compared with that of Cell-B seems to be due to the overlap of the cathode loop and the Warburg element. The high frequency intercept that corresponds to ohmic resistance is 0.5 and 0.45 Ω·cm2 for the Cell-A and Cell-B, respectively. Considering both cells have similar cathode sheet resistance of 540–560

• Ω·cm and the electrolyte thickness is about the same, such a difference in ohmic resistance may be attributed to a difference in anode sheet resistance stemming from the different thicknesses. Nevertheless, this slight difference in ohmic resistance is immaterial to the peak power density of two cells

Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

• Florian Waltz,
• Hans-Christoph Schwarz,
• Andreas M. Schneider,
• Stefanie Eiden and
• Peter Behrens

Beilstein J. Nanotechnol. 2015, 6, 799–808, doi:10.3762/bjnano.6.83

• crystallites do not overlap very well after the first CBD growth step, the electrical conductivity is only moderate. The sheet resistance of the films after the first CBD is typically in the range of MΩ/sq. Therefore, an additional step is necessary to grow a dense, ZnO film in order to yield low electrical

• properties were determined under UV irradiation corresponding to the bandgap energy (370 nm). The values of the sheet resistance as well as the specific resistance of completely processed ZnO films after the second CBD are listed in Table 2. The sheet resistance of our films was above 1 kΩ/sq and the sheet

• resistance of the samples which were only seeded was larger than 100 MΩ/sq. The film prepared without addition of HYA yielded a sheet resistance of 11.5 kΩ/sq, or normalized to its thickness of ≈750 nm, a specific resistance of 0.86 Ω∙cm results. All films prepared with HYA showed lower sheet resistances

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• -terminal measurement: The four-terminal measurement is often used to determine the sheet resistance of thin films. The contact resistance can be extracted indirectly by subtracting the thin film resistance from the overall resistance. Two pairs of terminals are contacted to the target material and a

Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties

• Priscilla Vasthi Quintana-Ramirez,
• Ma. Concepción Arenas-Arrocena,
• José Santos-Cruz,
• Marina Vega-González,
• Omar Martínez-Alvarez,
• Víctor Manuel Castaño-Meneses,
• Laura Susana Acosta-Torres and
• Javier de la Fuente-Hernández

Beilstein J. Nanotechnol. 2014, 5, 1542–1552, doi:10.3762/bjnano.5.166

• tailoring of the Cu/S stoichiometric ratio and the phase transformation had been reached at temperatures between 230 to 700 °C [21]. Grozdanov and Najdoski found that the electrical sheet resistance decreases as the copper content decreased [25]. This is consistent with our results. Conclusion Copper

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

• Pia Sundberg and
• Maarit Karppinen

Beilstein J. Nanotechnol. 2014, 5, 1104–1136, doi:10.3762/bjnano.5.123

Integration of ZnO and CuO nanowires into a thermoelectric module

• Dario Zappa,
• Simone Dalola,
• Guido Faglia,
• Elisabetta Comini,
• Matteo Ferroni,
• Caterina Soldano,
• Vittorio Ferrari and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2014, 5, 927–936, doi:10.3762/bjnano.5.106

• nanowire samples are summarized in Table 1. The experimental results are in agreement with recently reported values of Seebeck coefficient for ZnO thin-films [25] and nanostructures [26][27] and CuO thin-film [28][29]. The sheet resistance Rs of the elements has been measured by a four-probe technique

• (Table 1). Thermoelectric power factor (TPF) was estimated for both CuO and ZnO nanowires, based on sheet resistance Rs. The electrical conductivity was calculated as σ = 1/(Rs·h), where h is the thickness of each strip. We found values of σ of 2.0 S/m for copper oxide and 0.7 S/m for zinc oxide. While

Kelvin probe force microscopy of nanocrystalline TiO₂ photoelectrodes

• Alex Henning,
• Gino Günzburger,
• Res Jöhr,
• Yossi Rosenwaks,
• Biljana Bozic-Weber,
• Catherine E. Housecroft,
• Edwin C. Constable,
• Ernst Meyer and
• Thilo Glatzel

Beilstein J. Nanotechnol. 2013, 4, 418–428, doi:10.3762/bjnano.4.49

• space-charge region decreasing the sheet resistance at the interface. For the sensitized TiO2, the SPV also shows a logarithmic dependence on the light intensity (Figure 6b). We conclude that the measured SPV of the sensitized TiO2 is created by two different effects: a change of the surface dipole

Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

• Gabriele Fisichella,
• Salvatore Di Franco,
• Patrick Fiorenza,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Cristina Tudisco,
• Guido G. Condorelli,
• Nicolò Piluso,
• Noemi Spartà,
• Stella Lo Verso,
• Corrado Accardi,
• Cristina Tringali,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2013, 4, 234–242, doi:10.3762/bjnano.4.24

• , respectively. The electrical properties (sheet resistance, mobility, carrier density) of the transferred graphene as well as the specific contact resistance of metal contacts onto graphene were investigated by using properly designed test patterns. While a sheet resistance Rsh ≈ 1.7 kΩ/sq and a specific

• nanoscale mechanisms responsible for the very high ρc in the case of graphene on PEN, showing a ca. 10× smaller “effective” area for current injection than in the case of graphene on SiO2. Keywords: conductive AFM; contact resistance; graphene; mobility; PEN; sheet resistance; SiO2; Introduction Graphene

• distance. According to the TLM theory [24], R is related to the metal/graphene contact resistance Rc and to the graphene sheet resistance Rsh according to the relation By linear fitting of the data in Figure 4c by Equation 1, the sheet resistance (Rsh = 1.75 ± 0.04 kΩ/sq) and the contact resistance (Rc

Influence of the diameter of single-walled carbon nanotube bundles on the optoelectronic performance of dry-deposited thin films

• Kimmo Mustonen,
• Toma Susi,
• Antti Kaskela,
• Patrik Laiho,
• Ying Tian,
• Albert G. Nasibulin and
• Esko I. Kauppinen

Beilstein J. Nanotechnol. 2012, 3, 692–702, doi:10.3762/bjnano.3.79

• : bundle diameter; sheet resistance; SWCNT; thin film; transmittance; Introduction Single-walled carbon nanotubes (SWCNT) offer great application potential in future electronics, such as micro-electromechanical devices [1], sensors [2][3], transparent electrodes [4][5][6], thin-film field-effect

• ]. Since the network resistance scales linearly with the number of contacts, conductance thus scales linearly with the average bundle length. The absorbance (A) and conductance (σDC) can be linked by the so-called figure of merit K [6] where Rs is the sheet resistance and T(λ) (later simply T) the

• transmittance measured at the middle of the visible spectrum (λ = 550 nm, or 2.3 eV). The UV–vis–NIR absorption spectra and four-point sheet resistance values shown in Table 1 were used to calculate the corresponding K’s shown in Figure 6. The solid curves represent previously published data for SWCNTs

Low-temperature synthesis of carbon nanotubes on indium tin oxide electrodes for organic solar cells

• Andrea Capasso,
• Luigi Salamandra,
• Aldo Di Carlo,
• John M. Bell and
• Nunzio Motta

Beilstein J. Nanotechnol. 2012, 3, 524–532, doi:10.3762/bjnano.3.60

• density, the substrate looks almost black and is therefore no longer transparent. In addition, the sheet resistance of the ITO layer increased to 40 Ω/sq (almost three times higher than that for pristine ITO). When heated in air at 550 °C, the polycrystalline ITO layer is known to degrade, leading to the

• biggest hindrances that affected the PCE of polymer cells made from similarly treated electrodes, because in our case (i) the sheet resistance of the electrode undergoes a limited increase during the low temperature CVD; (ii) the light transmittance of the ITO–glass does not reduce much, thanks to the low

Highly efficient ZnO/Au Schottky barrier dye-sensitized solar cells: Role of gold nanoparticles on the charge-transfer process

• Tanujjal Bora,
• Htet H. Kyaw,
• Soumik Sarkar,
• Samir K. Pal and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2011, 2, 681–690, doi:10.3762/bjnano.2.73

• %). The lower PCE observed in the case of the large-area DSSCs compared to the small-area DSSCs is mainly attributed to the increase in the sheet resistance of the conducting FTO substrates resulting in an overall increase in the series resistance (Rs) of the large area DSSCs, which plays an important

• ZnO/Au-nanocomposite systems irrespective of the presence of the Schottky barrier. In the case of the large area ZnO/Au DSSCs, efficiency dropped to 3.27% and 1.16% for active areas equal to 0.25 cm2 and 1 cm2, respectively, which was mainly attributed to the increased sheet resistance of the FTO