One-step synthesis of carbon-supported electrocatalysts

• Sebastian Tigges,
• Nicolas Wöhrl,
• Ivan Radev,
• Ulrich Hagemann,
• Markus Heidelmann,
• Thai Binh Nguyen,
• Stanislav Gorelkov,
• Stephan Schulz and
• Axel Lorke

Beilstein J. Nanotechnol. 2020, 11, 1419–1431, doi:10.3762/bjnano.11.126

• process at a substrate temperature as low as 350 °C using platinum acetylacetonate as a single-source precursor was established for the deposition of a Pt/C electrocatalyst. Platinum in the form of NPs is homogeneously distributed in a carbon support structure due to the simultaneous deposition of both

• illustrated in Figure 1. For details on the experimental procedures, see the Experimental section. A typical CNW sheet of a sample processed at 8 Pa chamber pressure, 60 sccm argon carrier gas flow rate, and 350 °C substrate temperature is shown in a bright-field transmission electron microscope (TEM

• properties of the support Figure 4 shows the influence of the carrier gas flow rate (a), pressure (b), and substrate temperature (c) on the CNW morphology. The wall density, as well as the growth rate, was found to increase with increasing gas flow rate, decreasing pressure and increasing substrate

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• number of gold droplets per area on the substrate temperature is shown. The size distribution at 550 °C is also depicted (Figure 2, insets), which is representative of all distributions within the temperature range considered. The diameter of the gold droplets remains constant throughout, while the size

• to the eye: dashed red line) and mean droplet diameter values (black dots, guide to the eye: dashed black line) as a function of the substrate temperature. The insets show histograms with the size distribution of droplet diameter values at 550 °C. For Au on SiOx the distribution is approximated by a

Structural and electronic properties of SnO₂ doped with non-metal elements

• Jianyuan Yu,
• Yingeng Wang,
• Yan Huang,
• Xiuwen Wang,
• Jing Guo,
• Jingkai Yang and
• Hongli Zhao

Beilstein J. Nanotechnol. 2020, 11, 1321–1328, doi:10.3762/bjnano.11.116

• . When the concentration of the precursor solution was adjusted to 0.15 M and the substrate temperature was 773 K, a film with a resistivity of 1.2 × 10−4 Ω·cm was obtained [10]. Theoretical calculations, based on first principles, show that the doping of N into the SnO2 crystal structure can introduce

Proximity effect in [Nb(1.5 nm)/Fe(x)]₁₀/Nb(50 nm) superconductor/ferromagnet heterostructures

• Yury Khaydukov,
• Sabine Pütter,
• Laura Guasco,
• Roman Morari,
• Gideok Kim,
• Thomas Keller,
• Anatolie Sidorenko and
• Bernhard Keimer

Beilstein J. Nanotechnol. 2020, 11, 1254–1263, doi:10.3762/bjnano.11.109

• 1000 °C in ultra high vacuum for 2–3 h. A 50 nm thick Nb layer was deposited at a typical rate of 0.6 Å/s and a substrate temperature of TNb = 800 °C for samples s1 to s5 and at TNb = 33 °C for sample s6. Subsequently, the substrate temperature was decreased to TSL = 30–100 °C (see below Table 1) and a

• superconduction properties of [Fe(x)/Nb(1.5 nm)]10 superlattices on top of a thick Nb(50 nm) layer. The main characteristics are summarized in Table 1. Our investigation has shown that the Nb layer grows epitaxially on the Al2O3() substrate in the (100) direction at a substrate temperature during deposition of

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111)

• Maximilian Schaal,
• Takumi Aihara,
• Marco Gruenewald,
• Felix Otto,
• Jari Domke,
• Roman Forker,
• Hiroyuki Yoshida and
• Torsten Fritz

Beilstein J. Nanotechnol. 2020, 11, 1168–1177, doi:10.3762/bjnano.11.101

• the DBP molecules are well decoupled from the Ni(111) surface. Furthermore, a highly ordered DBP monolayer is obtained on h-BN/Ni(111) by depositing the molecules at a substrate temperature of 170 °C. The structural results are obtained by quantitative low-energy electron diffraction and low

• ). Furthermore, it was possible to obtain large domains of highly ordered molecules by depositing at an elevated substrate temperature of 170 °C. Results and Discussion Optical spectroscopy Figure 1 shows the comparison of the differential reflectance (DR) spectra (definition see Experimental section) of DBP on

• bare Ni(111) as well as of DBP on h-BN/Ni(111) grown at substrate temperatures Tsub of 25 °C and 170 °C, respectively. For DBP on Ni(111) deposited at a substrate temperature of 25 °C we observe rather broad and featureless DR spectra at the beginning of the deposition. Such broad spectra are

A Josephson junction based on a highly disordered superconductor/low-resistivity normal metal bilayer

• Pavel M. Marychev and
• Denis Yu. Vodolazov

Beilstein J. Nanotechnol. 2020, 11, 858–865, doi:10.3762/bjnano.11.71

• ) model [24][25] for the SN-S-SN junction. We suppose that electron temperature Te = T + δTe and phonon temperature Tp = T + δTp are close to the substrate temperature, δTe, δTp ≪ T and do not vary along the thickness. In the N layer the proximity-induced gap (minigap) is small, and, due to the inverse

• should not be too small (a small dN leads to large overheating) and not too large (a larger dN leads to lower Tc and smaller Ic at a fixed substrate temperature). Our results show that the SN-S-SN Josephson junction in many respects resembles Dayem bridge, variable-thickness, S’-S-S’ or S-N-S junctions

Transition from freestanding SnO₂ nanowires to laterally aligned nanowires with a simulation-based experimental design

• Jasmin-Clara Bürger,
• Sebastian Gutsch and
• Margit Zacharias

Beilstein J. Nanotechnol. 2020, 11, 843–853, doi:10.3762/bjnano.11.69

• furnace was heated up to the required process temperature (substrate temperature Tsubstrate = 850 °C, powder temperature Tpowder = 950 °C). These temperatures are required to allow for NW growth and to supply sufficient Sn vapor from the carbothermal reduction, respectively. After reaching the process

• carbothermal reduction and of the NW synthesis: Not only the transport mechanisms, but also the chemical equilibria of all reactions are influenced by the process pressure and the substrate temperature. Le Chatelier’s principle describes the probability regarding in which direction a reaction occurs [31

Light–matter interactions in two-dimensional layered WSe₂ for gauging evolution of phonon dynamics

• Avra S. Bandyopadhyay,
• Chandan Biswas and
• Anupama B. Kaul

Beilstein J. Nanotechnol. 2020, 11, 782–797, doi:10.3762/bjnano.11.63

• . From this analysis, phonon lifetime in the Raman active modes and phonon concentration, as correlated to the energy parameter E0, were calculated as a function of the laser power, P, and substrate temperature, T. For monolayer WSe2, from the power dependence it was determined that the phonon lifetime

• stimuli, specifically the Raman laser power P and substrate temperature T and comment on the light–matter interactions that evolve here in the context of phonon dynamics. Power-dependent Raman shifts in WSe2 Starting with the discussion on the laser power, the dependence of the and A1g mode in WSe2 was

• substrate is shown in (c)-left, and the application of external stimuli such as laser power P and substrate temperature T. The interlayer gap g is shown as ≈3.36 Å. (e) The variation of the Raman spectra for the and A1g modes for mechanically exfoliated WSe2 for 1L, ML, and bulk. The mode exhibits a red

Observation of unexpected uniaxial magnetic anisotropy in La_2/3Sr_1/3MnO₃ films by a BaTiO₃ overlayer in an artificial multiferroic bilayer

• John E. Ordóñez,
• Lorena Marín,
• Luis A. Rodríguez,
• Pedro A. Algarabel,
• José A. Pardo,
• Roger Guzmán,
• Luis Morellón,
• César Magén,
• Etienne Snoeck,
• María E. Gómez and
• Manuel R. Ibarra

Beilstein J. Nanotechnol. 2020, 11, 651–661, doi:10.3762/bjnano.11.51

• wavelength and 20 ns pulse duration. The films were grown on 5 × 5 × 0.5 mm3 commercial (001)-oriented STO, LSAT, and LAO single-crystal-polished substrates, with a miscut angle lower than 0.3°. The deposition of single LSMO films was performed at a substrate temperature of 830 °C and oxygen pressure of 400

Atomic-resolution imaging of rutile TiO₂(110)-(1 × 2) reconstructed surface by non-contact atomic force microscopy

• Daiki Katsube,
• Shoki Ojima,
• Eiichi Inami and
• Masayuki Abe

Beilstein J. Nanotechnol. 2020, 11, 443–449, doi:10.3762/bjnano.11.35

• .) were used. A rutile TiO2(110)-(1 × 2) reconstructed surface was prepared by iterating a surface cleaning process of Ar+ sputtering (2 keV, Ar partial pressure of 3.0 × 10−4 Pa, ion current of ca. 1.1 µA, 10 min) and annealing (substrate temperature of ca. 1000 °C, 30 min). STM and NC-AFM imaging was

Recent progress in perovskite solar cells: the perovskite layer

• Xianfeng Dai,
• Ke Xu and
• Fanan Wei

Beilstein J. Nanotechnol. 2020, 11, 51–60, doi:10.3762/bjnano.11.5

• containing MAI and PbCl2 over the solar cell substrate. Here, the champion devices exhibit a PCE of 11.1%. This report demonstrates the possibility of spray coating for large-area deposition of perovskite films. Sanjib et al. [44] proved that controlling the solar cell substrate temperature could enhance the

• perovskite precursor solution is usually swiped over a preheated substrate by a blade to obtain perovskite films after solvent evaporation. Many studies have demonstrated that the quality of the resulting perovskite films can be improved by controlling the substrate temperature [46][47]. In recent years

• remarkable milestones have been achieved concerning the preparation of the precursor solution. Ding et al. [37] incorporated an NH4Cl additive into the precursor solution accompanied by a mild substrate temperature and an air-blowing system to improve the crystallinity and the morphology of the perovskite

Oblique angle deposition of nickel thin films by high-power impulse magnetron sputtering

• Hamidreza Hajihoseini,
• Movaffaq Kateb,
• Snorri Þorgeir Ingvarsson and
• Jon Tomas Gudmundsson

Beilstein J. Nanotechnol. 2019, 10, 1914–1921, doi:10.3762/bjnano.10.186

• ][21] and substrate temperature [19], as well as while stacking into superlattices [23][24]. High-power impulse magnetron sputtering (HiPIMS), sometimes referred to as high-power pulsed magnetron sputtering (HPPMS), is a physical vapor deposition (PVD) technique based on pulsed power technology where

Superconducting switching due to a triplet component in the Pb/Cu/Ni/Cu/Co₂Cr_1−xFe_xAl_y spin-valve structure

• Andrey Andreevich Kamashev,
• Nadir Nurgayazovich Garif’yanov,
• Aidar Azatovich Validov,
• Joachim Schumann,
• Vladislav Kataev,
• Bernd Büchner,
• Yakov Victorovich Fominov and
• Ilgiz Abdulsamatovich Garifullin

Beilstein J. Nanotechnol. 2019, 10, 1458–1463, doi:10.3762/bjnano.10.144

• . The Ni, Cu and Pb layers were prepared using e-beam techniques. For the fabrication of the HA and the Si3N4 layers dc sputtering was used. We used deposition rates of 0.4 Å/s for HA and Si3N4, 0.5 Å/s for Cu and Ni, and 10 Å/s for Pb. At first, when evaporating HA, the substrate temperature was kept

• compound in comparison with the ideal Heusler composition Co2Cr1−xFexAly. In fact, this “not ideal” composition demonstrates a high DSP of the order of 70% [17]. The study by S. Husain et al. [18] shows that the DSP increases with increasing the substrate temperature Tsub. Therefore, we expect the DSP in

• our samples to be of the order of 80%. According to our previous study [19], in order to improve the smoothness of the Pb layer the substrate temperature should be reduced down to Tsub≈ 150 K. Therefore, the top Cu(4 nm)/Ni(dNi)/Cu(1.5 nm)/Pb fragment was grown at this reduced Tsub. Finally, all

CuInSe₂ quantum dots grown by molecular beam epitaxy on amorphous SiO₂ surfaces

• Henrique Limborço,
• Pedro M.P. Salomé,
• Rodrigo Ribeiro-Andrade,
• Jennifer P. Teixeira,
• Nicoleta Nicoara,
• Kamal Abderrafi,
• Joaquim P. Leitão,
• Juan C. Gonzalez and
• Sascha Sadewasser

Beilstein J. Nanotechnol. 2019, 10, 1103–1111, doi:10.3762/bjnano.10.110

• nanodots presented in Figure 1. With increasing substrate temperature, the mean size of the nanodots increases, leading to reduced quantum confinement effect and a red-shift of the PL emission to values closer to the CIS bandgap. To analyse the CIS emission in more detail and independently of the

Fabrication of silver nanoisland films by pulsed laser deposition for surface-enhanced Raman spectroscopy

• Bogusław Budner,
• Mariusz Kuźma,
• Barbara Nasiłowska,
• Bartosz Bartosewicz,
• Malwina Liszewska and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2019, 10, 882–893, doi:10.3762/bjnano.10.89

• different conditions on silicon substrates. Size and morphology of the fabricated silver nanoislands mainly depend on the substrate temperature, and number and energy of the laser pulses. SERS properties of the fabricated films were evaluated by measuring SERS spectra of para-mercaptoaniline (pMA) molecules

• sections of this article suggest that the distances between the silver nanoislands are increasing as the temperature of the substrate increases. This conclusion is consistent with the observed reduction of the enhancement factor (EF) achieved for the Raman signal when the substrate temperature rises

• silver nanoislands obtained. In the case of samples deposited with a laser fluence of 5.56 ± 0.37 J/cm2 and a substrate temperature of 190 ± 3 °C, with an excitation wavelength of 532 nm the average intensity of the peak increases from 996 for sample A to 2086 for sample D and then slightly decreases to

On the transformation of “zincone”-like into porous ZnO thin films from sub-saturated plasma enhanced atomic layer deposition

• Alberto Perrotta,
• Julian Pilz,
• Stefan Pachmajer,
• Antonella Milella and
• Anna Maria Coclite

Beilstein J. Nanotechnol. 2019, 10, 746–759, doi:10.3762/bjnano.10.74

• controllers (MKS MF1-C) were used to control the flow rates of the gases. An ALD-valve (Swagelok ALD3) was used to pulse DEZ into the reactor. Due to the high vapor pressure of DEZ, no further heating or bubbling system were adopted. All depositions were carried out at floating substrate temperature [40

Direct observation of the CVD growth of monolayer MoS₂ using in situ optical spectroscopy

• Claudia Beatriz López-Posadas,
• Yaxu Wei,
• Wanfu Shen,
• Daniel Kahr,
• Michael Hohage and
• Lidong Sun

Beilstein J. Nanotechnol. 2019, 10, 557–564, doi:10.3762/bjnano.10.57

• features A and B observed at room temperature are hardly visible. We attribute this deviation from the optical spectrum measured at room temperature to the high substrate temperature (≈700 °C) during growth. Indeed, the study of the temperature dependence of the absorption of the MoS2 monolayer shows the

• influence of the substrate temperature. In addition, the absorption of the MoO3 thin films deposited on the quartz window is also clearly visible at 3.2 eV. Finally, during the section III (Figure 2b), the incremental change of the DTS is dominated by the increase in the energy range above 3.2 eV. In

• until this moment. (2) The growth of the MoS2 monolayer at a substrate temperature as low as 530 °C has been reported [11]. We thus attribute the observed onset of the MoS2 growth to the evaporation of the MoO3 reaching a recognizable rate. Afterwards, the DT signal at 2.7 eV increases monotonically

Biocompatible organic–inorganic hybrid materials based on nucleobases and titanium developed by molecular layer deposition

• Leva Momtazi,
• Henrik H. Sønsteby and
• Ola Nilsen

Beilstein J. Nanotechnol. 2019, 10, 399–411, doi:10.3762/bjnano.10.39

• ) film density as measured by X-ray reflectivity (XRR) as a function of substrate temperature for TTIP and adenine (red circles), thymine (black square) and uracil (blue triangle). Contact angle between water and films made of TTIP and (a) thymine (b) uracil and (c) adenine. Evaluation of the mass

Femtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaics

• Franziska Ringleb,
• Stefan Andree,
• Berit Heidmann,
• Jörn Bonse,
• Katharina Eylers,
• Owen Ernst,
• Torsten Boeck,
• Martina Schmid and
• Jörg Krüger

Beilstein J. Nanotechnol. 2018, 9, 3025–3038, doi:10.3762/bjnano.9.281

• rate and substrate temperature of the indium PVD process. In order to grow indium islands of well-defined size and aspect ratios and also for realizing arrays of specific spacings without undesired interstitial island formation, the island density and morphology had to be optimized through systematic

• examination of varying growth conditions. For the PVD process, the variation of temperature and deposition rate provided the insight that island distance and size increase with increasing substrate temperature. This can be intuitively understood by the higher mobility of the indium atoms diffusing on the

• substrate. At the same substrate temperature, a higher island density was observed by increasing the indium deposition rate. This is in line with the classical nucleation theory according to which the formation of stable nuclei depends on a critical (material specific) nucleus size. The shape of indium

Fabrication of photothermally active poly(vinyl alcohol) films with gold nanostars for antibacterial applications

• Mykola Borzenkov,
• Maria Moros,
• Claudia Tortiglione,
• Serena Bertoldi,
• Nicola Contessi,
• Silvia Faré,
• Angelo Taglietti,
• Agnese D’Agostino,
• Piersandro Pallavicini,
• Maddalena Collini and
• Giuseppe Chirico

Beilstein J. Nanotechnol. 2018, 9, 2040–2048, doi:10.3762/bjnano.9.193

• ). The substrate temperature change was monitored by means of a thermocamera (FLIR, E40, USA) and the supporting analysis software. The temperature was monitored with respect to time on a region of interest (ROI) comprising the irradiated area and the maximum temperature within the ROI was taken as a

Synthesis of carbon nanowalls from a single-source metal-organic precursor

• André Giese,
• Sebastian Schipporeit,
• Volker Buck and
• Nicolas Wöhrl

Beilstein J. Nanotechnol. 2018, 9, 1895–1905, doi:10.3762/bjnano.9.181

• substrate bias and the substrate temperature on the deposition process and on the structure of the synthesized CNWs. Four different kinds of substrates were chosen: stainless steel, aluminium, nickel and silicon. These materials were chosen because they differ significantly in essential properties such as

• specific structures can be controlled through the bias voltage and substrate temperature, both parameters that influence the particle energy of the growth precursors. The dependence is indicated schematically in Figure 5. By increasing bias voltage and substrate temperature the growth zones are changed

• . First, a higher particle energy leads to a higher surface diffusion and thus less nucleation sites for the CNWs. However, if we increase the energy of the growth species even higher by increasing substrate temperature and the bias more defects are induced in the initial carbon growth layer. It was

Increasing the performance of a superconducting spin valve using a Heusler alloy

• Andrey A. Kamashev,
• Aidar A. Validov,
• Joachim Schumann,
• Vladislav Kataev,
• Bernd Büchner,
• Yakov V. Fominov and
• Ilgiz A. Garifullin

Beilstein J. Nanotechnol. 2018, 9, 1764–1769, doi:10.3762/bjnano.9.167

• /Pb has been investigated in detail with the focus on the S/F proximity effect very recently. It was shown [25] that the degree of the spin polarization of the conduction band of the HA film amounts to 30% for the films prepared at a particular substrate temperature of Tsub = 300 K during the growth

• growth of the F2 layer is very beneficial. It greatly relaxes the stringent condition on the minimum thickness of the F2 layer. Indeed, according to the previous analysis of the Pb/Cu/Co2Cr1−xFexAl trilayers, the HA film grown at the substrate temperature of Tsub = 300 K can be classified as a weak

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate

• Aiden A. Martin and
• Philip J. Depond

Beilstein J. Nanotechnol. 2018, 9, 1282–1287, doi:10.3762/bjnano.9.120

• at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the

• a function of the substrate temperature. The results reveal that high-purity boron oxide material is obtained at a substrate temperature of approximately 270 °C, and that the ligand type of the precursor molecule does not precisely predict the reaction pathway of the EBID process when compared to

• temperature using TMB precursor are shown in Figure 2a. The material is rapidly deposited at room temperature and the rate sharply decreases with increasing substrate temperature. The sharp decrease in the rate of material deposition is caused by surface-coverage depletion of the precursor on the substrate at

Semi-automatic spray pyrolysis deposition of thin, transparent, titania films as blocking layers for dye-sensitized and perovskite solar cells

• Hana Krýsová,
• Josef Krýsa and
• Ladislav Kavan

Beilstein J. Nanotechnol. 2018, 9, 1135–1145, doi:10.3762/bjnano.9.105

• intervals (30 s) which were necessary for complete layer formation and restoration of the original substrate temperature. This technique allows for the fabrication of films using various numbers of spray cycles (SCs). During the coating procedure, a narrow area at the edge of the FTO glass substrate was

Room-temperature single-photon emitters in titanium dioxide optical defects

• Kelvin Chung,
• Yu H. Leung,
• Chap H. To,
• Aleksandra B. Djurišić and
• Snjezana Tomljenovic-Hanic

Beilstein J. Nanotechnol. 2018, 9, 1085–1094, doi:10.3762/bjnano.9.100

• characterisation measurements of fluorescence microscopy, correlation measurements, PL spectra and photodynamics are presented. Experimental Electron-beam deposition of TiO2 thin films The films were fabricated via e-beam deposition in high vacuum with the substrate temperature set to 200 °C during deposition

• manner except that the substrate temperature was set to 160 °C and annealed at 450 °C in the same manner as a-450 °C-TiO2. This sample is labelled b-450 °C-TiO2. Preparation of TiO2 nanopowder samples Two nanopowder phases, anatase and rutile (MTI Corporation) were used. The anatase (rutile) has a purity