Sodium doping in brookite TiO₂ enhances its photocatalytic activity

• Boxiang Zhuang,
• Honglong Shi,
• Honglei Zhang and
• Zeqian Zhang

Beilstein J. Nanotechnol. 2022, 13, 599–609, doi:10.3762/bjnano.13.52

• magnetically stirred for 30 min in the dark to equilibrate the adsorption and desorption of MB on the surface of the crystallites. After switching on the UV light, samples were periodically collected and centrifuged. The concentration of the MB solution was analyzed based on the characteristic absorption peak

Approaching microwave photon sensitivity with Al Josephson junctions

• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Leonid S. Revin,
• Dmitry A. Ladeynov,
• Anton A. Yablokov and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 582–589, doi:10.3762/bjnano.13.50

• photon counter in the microwave frequency range. We have measured the switching from the superconducting to the resistive state through the absorption of 10 GHz photons. The dependence of the switching probability on the signal power suggests that the switching is initiated by the simultaneous absorption

• power, whose presence can be observed only in the switching distributions and in the shorter lifetime of the superconducting state. The used experimental setup is the same as in [7], except for the measured sample. In [7], the critical current of the sample was very low, and the phase diffusion regime

• the experiment is done with a more general theory, which considers the absorption probabilities of different numbers of photons. The time traces of setting a current and an external microwave signal to measure the switching probability as a function of power are shown in Figure 1c. First, the current

Detection and imaging of Hg(II) in vivo using glutathione-functionalized gold nanoparticles

• Gufeng Li,
• Shaoqing Li,
• Rui Wang,
• Min Yang,
• Lizhu Zhang,
• Yanli Zhang,
• Wenrong Yang and
• Hongbin Wang

Beilstein J. Nanotechnol. 2022, 13, 549–559, doi:10.3762/bjnano.13.46

• molecular release system. After adding Cu(II), we observed a switching of the GNP–ʟ-Cys–Rh6G2 fluorescence from “OFF” to “ON” with high stability. Furthermore, it is worth noting that glutathione (GSH) contains a thiol and an amino group. It can not only conjugate to the nanoparticle surfaces through the

Tunable superconducting neurons for networks based on radial basis functions

• Andrey E. Schegolev,
• Nikolay V. Klenov,
• Sergey V. Bakurskiy,
• Igor I. Soloviev,
• Mikhail Yu. Kupriyanov,
• Maxim V. Tereshonok and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2022, 13, 444–454, doi:10.3762/bjnano.13.37

• For neural networks based on the considered G-neurons, tunable elements with linear current-to-flux transformation (linear inductors) and memory properties are extremely important [50][51]. Tunability of the inductance l in Figure 1b allows for an in situ switching between operating modes directly on

• valve), providing a propagation of Cooper pairs to the outlying layers of the hybrid structure. The switching between the open and closed states of the valve leads to a noticeable change in the spatial distribution of Cooper pairs. The implementation of a thin superconducting spacer (s) between the FM

• times during switching between states with parallel and antiparallel magnetization orientations. We also made some estimates for the quantitative value of the kinetic inductance of the structure shown in Figure 7 based on niobium technology. The inductance of the strip with width W = 100 nm, length X

A chemiresistive sensor array based on polyaniline nanocomposites and machine learning classification

• Jiri Kroutil,
• Alexandr Laposa,
• Ali Ahmad,
• Jan Voves,
• Vojtech Povolny,
• Ladislav Klimsa,
• Marina Davydova and
• Miroslav Husak

Beilstein J. Nanotechnol. 2022, 13, 411–423, doi:10.3762/bjnano.13.34

• multiplexor for switching four sensor elements, and a Labview-based data acquisition system. The sensing layers were tested towards carbon dioxide (250 ppm CO2), carbon monoxide (25 ppm), ammonia (25 ppm), nitrogen dioxide (25 ppm), acetone (6%), toluene (500 ppm) and humid air (RH) in synthetic air (SA) at

Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• cross section of 14 µm × 400 nm. The gap is 300 nm, and the pull-in voltage is 70 V. As the width is reduced to 200 nm and the gap is reduced to 100 nm, the pull-in voltage is reduced to 5 V. The switching current ratio is greater than 106, and the number of life cycles is greater than 105. Jasulaneca

• with a switching ratio of about 103. Qian et al. [37] produced a U-shaped NEM switch with two Si nanowires, which support a square capacitive plate to form a U-shaped removable electrode, as shown in Figure 5b. The length of the silicon nanowires is 5 µm, the cross section is 90 × 90 nm square, the

• a lateral spacing of 50 nm. The pull-in voltage was −1.8 V and the switching ratio was 105. However, the introduction of heavy doping will increase the risk of failure. In situ technique: In 2010, Andzane et al. [14] used the in situ technique to characterize Mo6S3I6 NW electrodes. The Mo6S3I6 beam

Controllable two- and three-state magnetization switching in single-layer epitaxial Pd_1−xFe_x films and an epitaxial Pd_0.92Fe_0.08/Ag/Pd_0.96Fe_0.04 heterostructure

• Igor V. Yanilkin,
• Amir I. Gumarov,
• Gulnaz F. Gizzatullina,
• Roman V. Yusupov and
• Lenar R. Tagirov

Beilstein J. Nanotechnol. 2022, 13, 334–343, doi:10.3762/bjnano.13.28

• . Its magnetic configuration diagram has been constructed and the conditions have been determined for a controllable switching between stable parallel, orthogonal, and antiparallel arrangements of magnetic moments of the layers. Keywords: anisotropic magnetoresistance; magnetization reversal; Pd–Fe

• degrees of freedom to control the critical current of MJJs [10] or SSVs [6], or current–phase relations in MJJs [11][12]. In particular, the spin-valve structure embedded into a MJJ can serve as an actuator for switching the MJJ between critical current modes or flipping its current–phase relation, thus

• makes it possible to achieve parallel, orthogonal, and antiparallel configurations of their magnetic moments. Such a heterostructure can serve as a magnetic actuator for switching the MJJ from the singlet conduction mode to the triplet conduction mode and vice versa. The experimental rotation of the

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• analysis of resistive switching properties observed in a Au/(Ti–Cu)Ox/TiAlV structure with a gradient distribution of Cu and Ti along the (Ti–Cu)Ox thin film thickness. Thin films were prepared via multisource reactive magnetron co-sputtering. The programmed profile of the pulse width modulation

• resistive switching behavior. Results of optical, X-ray, and ultraviolet photoelectron spectroscopy measurements allowed us to elaborate the scheme of the bandgap alignment of the prepared thin films with respect to the Au and TiAlV electrical contacts. Detailed structure and elemental profile

• investigations allowed us to conclude about the possible mechanism for the observed resistive switching mechanism. Keywords: gradient thin film; magnetron sputtering; memory effect; resistive switching; Introduction In recent years, significant development has been observed in design, simulation, manufacturing

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

• Max Mennicken,
• Sophia Katharina Peter,
• Corinna Kaulen,
• Ulrich Simon and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2022, 13, 219–229, doi:10.3762/bjnano.13.16

• mechanism, that is, thermally activated hopping conduction in the case of Ru-terpyridine wire devices or sequential tunneling in nanoparticle-based devices. Furthermore, the conductance switching of nanoparticle-based devices upon 530 nm irradiation was attributed to plasmon-induced metal-to-ligand charge

• transfer in the Ru-terpyridine complexes used as switching ligands. Finally, our results reveal a superior device performance of nanoparticle-based devices compared to molecular wire devices based on Ru-terpyridine complexes as functional units. Keywords: conductance switching; gold nanoparticles

• . Molecular engineering is required to design and assemble molecules or supramolecular systems with specific functions and to ensure the device performance. Favorable molecular systems are capable of performing electronic operations such as data storage, rectification, sensing or switching. In this regard

Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe film

• Rahil Hosseinifar,
• Evangelos Golias,
• Ivar Kumberg,
• Quentin Guillet,
• Karl Frischmuth,
• Sangeeta Thakur,
• Mario Fix,
• Manfred Albrecht,
• Florian Kronast and
• Wolfgang Kuch

Beilstein J. Nanotechnol. 2022, 13, 74–81, doi:10.3762/bjnano.13.5

• , Universitätsstraße 1, 86135 Augsburg, Germany Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Straße 15, 12489 Berlin, Germany 10.3762/bjnano.13.5 Abstract We present a microscopic magnetic domain imaging study of single-shot all-optical magnetic toggle switching of a ferrimagnetic Gd26Fe74

• magnetization direction, the so-called toggle switching. Local deviations from this deterministic behavior close to magnetic domain walls are studied in detail. Reasons for nondeterministic toggle switching are related to extrinsic effects, caused by pulse-to-pulse variations of the exciting laser system, and

• to intrinsic effects related to the magnetic domain structure of the sample. The latter are, on the one hand, caused by magnetic domain wall elasticity, which leads to a reduction of the domain-wall length at features with sharp tips. These features appear after the optical switching at positions

Design aspects of Bi₂Sr₂CaCu₂O_8+δ THz sources: optimization of thermal and radiative properties

• Mikhail M. Krasnov,
• Natalia D. Novikova,
• Roger Cattaneo,
• Alexey A. Kalenyuk and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 1392–1403, doi:10.3762/bjnano.12.103

• multiple branches due to one-by-one switching of IJJs from the superconducting to the resistive state. The are N ≈ 200 and ≈300 IJJs in whisker and crystal mesas, respectively. Both the whisker and the crystal have a similar suppressed Tc ≈ 65–70 K and low critical current densities of IJJs, Jc ≈ 100 A/cm2

• results of in situ THz generation-detection experiment on a whisker-based device. We follow the procedure developed in [14], where details of the technique can be found. We use one mesa with the I–V like in Figure 2a as a generator, and another mesa on the same device as a switching current detector. The

Enhancement of the piezoelectric coefficient in PVDF-TrFe/CoFe₂O₄ nanocomposites through DC magnetic poling

• Marco Fortunato,
• Alessio Tamburrano,
• Maria Paola Bracciale,
• Maria Laura Santarelli and
• Maria Sabrina Sarto

Beilstein J. Nanotechnol. 2021, 12, 1262–1270, doi:10.3762/bjnano.12.93

• piezoelectric and ferroelectric properties, high chemical resistance, high thermal stability, large polarization, short switching time, and mechanical flexibility. All these combined characteristics make it suitable for a wide range of advanced applications, from sensing to energy harvesting [8][9][10][11]. It

Electrical, electrochemical and structural studies of a chlorine-derived ionic liquid-based polymer gel electrolyte

• Ashish Gupta,
• Amrita Jain,
• Manju Kumari and
• Santosh K. Tripathi

Beilstein J. Nanotechnol. 2021, 12, 1252–1261, doi:10.3762/bjnano.12.92

• the involvement of π-electrons responsible for the generation of charge carriers and their switching, which results in a reduction of the electron density of the overall system and an increase in the activation energy [10]. Simultaneously, there is also a decrease in the activation energy produced by

Two dynamic modes to streamline challenging atomic force microscopy measurements

• Alexei G. Temiryazev,
• Andrey V. Krayev and
• Marina P. Temiryazeva

Beilstein J. Nanotechnol. 2021, 12, 1226–1236, doi:10.3762/bjnano.12.90

• amplitude [15]. The two possible resonant frequencies correspond to different distances between the probe and the sample. The condition under which the frequency shift is negative is called the net-attractive regime, and correspondingly, positive frequency shift is called net-repulsive regime. Switching

• from one regime to another is experimentally observed in the form of a sharp change in the phase of forced oscillations (Figure 1d). Hysteresis is often observed on the approach–retraction curve; switching of regimes occurs at different amplitudes depending on whether the probe approaches or retracts

• . There is a certain range of amplitudes within which the probe can be both in net-attraction and in net-repulsion (Figure 1c). Thus, under certain conditions, the unambiguous dependence between A and z is broken. If Asp falls within this range, then due to the random switching of the interaction regime

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• light-emitting diodes (OLED) possess several interesting properties and are therefore gaining popularity [14]. Their low-cost and facile fabrication routes, wider viewer angle, higher resolution, lower-power consumption, lightweight, higher contrast, and faster switching characteristics give them

An overview of microneedle applications, materials, and fabrication methods

• Zahra Faraji Rad,
• Philip D. Prewett and
• Graham J. Davies

Beilstein J. Nanotechnol. 2021, 12, 1034–1046, doi:10.3762/bjnano.12.77

• ratio etches are achieved by multiplex switching of gas feed between SF6 + O2 (etch) and C4F8 (sidewall passivation) in the Bosch process [86][87]. Dry etching allows better control over microneedle density and geometry and the absence of crystal plane effects allows microneedles with cylindrical

• consecutive switching between isotropic and anisotropic etching from the front side of the wafer. Microneedles with heights between 310 and 400 μm with sharp tips were obtained [91]. Silicon microneedles are brittle and may break during insertion into the skin, which could result in foreign body reactions

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

• Adem Koçyiğit,
• Adem Sarılmaz,
• Teoman Öztürk,
• Faruk Ozel and
• Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

• photocapacitance behavior of the Au/CuNiCoS4/p-Si photodiode have been tested by transient measurements while switching the light on and off for different illumination power densities. The photocurrent transient results are given in Figure 13a, the photocapacitance transient graphs are indicated in Figure 13b. The

Molecular assemblies on surfaces: towards physical and electronic decoupling of organic molecules

• Sabine Maier and
• Meike Stöhr

Beilstein J. Nanotechnol. 2021, 12, 950–956, doi:10.3762/bjnano.12.71

• tip of a scanning probe microscope and mechanically lifted from the metallic surface such that they hang freely between metal contacts. This manipulation technique allows for measuring, amongst others, the electronic conductance, magnetic properties, reversible switching, and electroluminescence of

• . Among others, ultrathin dielectric layers of either alkali halides (e.g., NaCl [17]) or metal oxides (e.g., MgO [18], Al2O3 [19], and CuO [20]), or nitrides (CuN [21]) have been shown to be beneficial for successfully reducing or even completely switching off the unwanted interaction between the metal

• particular for preserving reversible switching capabilities [68][69], but also conformational [9][10][70], tautomeric [71], and charge state switching could be shown [56]. This Thematic Issue highlights recent experimental and theoretical developments in realizing and understanding physically and

In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures

• Olena M. Kapran,
• Roman Morari,
• Taras Golod,
• Evgenii A. Borodianskyi,
• Vladimir Boian,
• Andrei Prepelita,
• Nikolay Klenov,
• Anatoli S. Sidorenko and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 913–923, doi:10.3762/bjnano.12.68

• min upon switching between targets. The deposition is performed at room temperature with a water-cooled sample stage. Thicknesses are defined using calibrated growth rates: 3.5 nm/s for Nb and 0.1 nm/s for Co. For every set of F-layers, three identical samples were prepared simultaneously, and some

• response, which indicates switching into some specific metastable magnetic states. There are two mechanisms for the appearance of hysteresis in the MLs [34][37]. The major hysteresis is associated with switching in and out from the magnetostatically stable AP state. Multiple smaller ones are associated

• with switching between different domain states, which are also metastable. Figure 3a shows longitudinal MR for the same horizontal bridge (hard axis orientation) at the S1 sample as in Figure 1e. The overall shape of Rxx(H) with a minimum at low fields and an additional maximum nearby is similar to

The role of convolutional neural networks in scanning probe microscopy: a review

• Ido Azuri,
• Irit Rosenhek-Goldian,
• Neta Regev-Rudzki,
• Georg Fantner and
• Sidney R. Cohen

Beilstein J. Nanotechnol. 2021, 12, 878–901, doi:10.3762/bjnano.12.66

• -topographical SPM technique is the study of ferroelectric switching [135]. This switching is a function of both reading and writing voltages, and can vary with experimental conditions such as time and temperature, and is further complicated by competing processes. The measurement technique was contact KPFM

• standard image analysis techniques such as interpolation in order to tweak out more information. Different types of switching were clearly grouped by principle components to capture changes in switching behavior at different temperatures and different curve types. A neural network was applied to these

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• has been used to modulate the local magnetic anisotropy, with multilevel switching achieved [54]. The neon ion beam of the HIM has also been used to tailor magnetic properties. The heavier ions were used to introduce chemical disorder into the target lattice through the local displacement of atoms in

• PbZr0.2Ti0.8O3 thin films at doses of 0.22 × 1015 to 1 × 1015 ions/cm2 has been demonstrated, and through site-selective direct-write patterning with variable dose, various nanostructures with novel ferroelectric-switching functionalities have been fabricated [33] (Figure 2f). Using similar doses, out-of-plane

Extended iron phthalocyanine islands self-assembled on a Ge(001):H surface

• Rafal Zuzak,
• Marek Szymonski and
• Szymon Godlewski

Beilstein J. Nanotechnol. 2021, 12, 232–241, doi:10.3762/bjnano.12.19

• ) indicate the area visualized in (b). Imaging conditions: bias voltage −2.0 V; tunneling current 30 pA. Supporting Information Supporting Information File 60: Additional information on single DB charge state switching on Ge(001):H. Funding We acknowledge financial support from the National Science Center

TiO_x/Pt₃Ti(111) surface-directed formation of electronically responsive supramolecular assemblies of tungsten oxide clusters

• Marco Moors,
• Yun An,
• Agnieszka Kuc and
• Kirill Yu. Monakhov

Beilstein J. Nanotechnol. 2021, 12, 203–212, doi:10.3762/bjnano.12.16

• applied potential [3], have shown great potential for next-generation information technologies. This change of the electrical resistance often faces local redox reactions inside the oxide layer [4]. From the chemical point of view, the active switching layer can be downsized to individual molecular units

• controlled manipulation of single W3O9 clusters. The power of the STM approach for molecular switches has been demonstrated several times. For example, Cui et al. recently showed the reversible switching of a large discoid polyaromatic salt as a function of the applied bias voltage [27]. By that, we were

Kondo effects in small-bandgap carbon nanotube quantum dots

• Patryk Florków,
• Damian Krychowski and
• Stanisław Lipiński

Beilstein J. Nanotechnol. 2020, 11, 1873–1890, doi:10.3762/bjnano.11.169

• degeneracy points and the gate dependence of degeneracy lines are interesting for quantum computing because they open the possibility of electric switching between different types of qubits (spin, valley, or valley–spin) and their higher-dimensional equivalents (qutrits [51][52], qudits [53][54]) in the same

• switching of physical quantities such as magnetic or orbital moments of the dots (examples of the maps of magnetic and orbital moments are given below in Figure 3c,d). The occurrence of points of different degeneracy and the ability to move between them by change of the gate voltage may have significance

• for quantum computing by providing a method for electrically switching, in the same nanoscopic system, between spin, valley, or spin–valley qubits, as well as between qubits and qutrites (threefold degeneracy) or qudits (fourfold degeneracy) of various types. For the analyzed nanotube C(24,21

Molecular dynamics modeling of the influence forming process parameters on the structure and morphology of a superconducting spin valve

• Alexander Vakhrushev,
• Aleksey Fedotov,
• Vladimir Boian,
• Roman Morari and
• Anatolie Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1776–1788, doi:10.3762/bjnano.11.160

• structures are highly sensitivity to magnetic field switching and energy consumption is significantly reduced due to the absence of dissipation in such a valve in the ground (superconducting) state. Practice shows that the creation of multilayer S/F nanostructures with the required properties is an