Search results

Search for "transport properties" in Full Text gives 160 result(s) in Beilstein Journal of Nanotechnology.

Kondo effects in small-bandgap carbon nanotube quantum dots

  • Patryk Florków,
  • Damian Krychowski and
  • Stanisław Lipiński

Beilstein J. Nanotechnol. 2020, 11, 1873–1890, doi:10.3762/bjnano.11.169

Graphical Abstract
  • ][10][11]. CNTs are also interesting for fundamental science. Their study allows for the examination of many basic properties in ranges often not reachable in other systems. Many of the fundamental transport properties were observed in nanotubes, including Coulomb blockade [12][13], Fabry–Perot
  • nanoscopic system. The storage capacity of three-state or four-state qudits is obviously higher than the capacity of a qubit. In the present paper, we are interested in transport properties. The regime of charge transport depends on the ratio between tunnel-induced broadening of dot energy levels and
  • transport properties in the strong-correlation regime. Figure 1c,d presents partial-conductance values of a dot formed in a nanotube C(24,21), CNTQD(24,21), for the case that the dot is strongly coupled to the leads and Kondo effects occur at degeneracy points or lines. Figure 1c presents gate-dependencies
PDF
Album
Full Research Paper
Published 23 Dec 2020

Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

  • Shaimaa Elyamny,
  • Elisabetta Dimaggio and
  • Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

Graphical Abstract
  • of integrated electronic devices and circuits [24]. The diameter of the nanowires fabricated by MACE is not uniform, but it is distributed around an average value of 80 nm, which depends on the etching parameters. The transport properties (thermal conductivity and Seebeck coefficient) have been
PDF
Album
Full Research Paper
Published 11 Nov 2020

Superconductor–insulator transition in capacitively coupled superconducting nanowires

  • Alex Latyshev,
  • Andrew G. Semenov and
  • Andrei D. Zaikin

Beilstein J. Nanotechnol. 2020, 11, 1402–1408, doi:10.3762/bjnano.11.124

Graphical Abstract
  • less than 2. As a result, two superconducting wires become insulating as soon as they are brought sufficiently close to each other. This remarkable physical phenomenon is illustrated by the phase diagram in Figure 2b. In order to complete this part of our analysis, we point out that transport
  • properties can be investigated in exactly the same manner as was done in [5] in the case of a single nanowire. Generalization of the technique [5] to the case of two capacitively coupled superconducting nanowires is straightforward. For a linear resistance of the ith wire Ri(T) and for λii > 2 (or for any
PDF
Album
Full Research Paper
Published 14 Sep 2020

Controlling the proximity effect in a Co/Nb multilayer: the properties of electronic transport

  • Sergey Bakurskiy,
  • Mikhail Kupriyanov,
  • Nikolay V. Klenov,
  • Igor Soloviev,
  • Andrey Schegolev,
  • Roman Morari,
  • Yury Khaydukov and
  • Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1336–1345, doi:10.3762/bjnano.11.118

Graphical Abstract
  • the conditions at which switching from the parallel to the antiparallel alignment of the neighboring F-layers leads to a significant change of the superconducting order parameter in superconductive thin films. We experimentally study the transport properties of a lithographically patterned Nb/Co
  • multilayer structure is possible. In addition, the temperature of this transition depends on the magnetic environment. Given the aforementioned results, one can conclude that the electronic transport properties in the multilayer structure S/[F1/s/F2/s]n can be used to create different switching electronic
PDF
Album
Full Research Paper
Published 07 Sep 2020

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS2 field-effect transistors

  • Jakub Jadwiszczak,
  • Pierce Maguire,
  • Conor P. Cullen,
  • Georg S. Duesberg and
  • Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

Graphical Abstract
  • of well-performing monolayer TMD films [3][4][5], leading to viable large-scale integration of on-chip TMD FETs. With device miniaturization, it becomes key to understand the impact of defects such as chalcogen vacancies on the electrical transport properties of FETs based on 2D semiconductors. This
PDF
Album
Full Research Paper
Published 04 Sep 2020

Proximity effect in [Nb(1.5 nm)/Fe(x)]10/Nb(50 nm) superconductor/ferromagnet heterostructures

  • Yury Khaydukov,
  • Sabine Pütter,
  • Laura Guasco,
  • Roman Morari,
  • Gideok Kim,
  • Thomas Keller,
  • Anatolie Sidorenko and
  • Bernhard Keimer

Beilstein J. Nanotechnol. 2020, 11, 1254–1263, doi:10.3762/bjnano.11.109

Graphical Abstract
  • , and re-entrant superconductivity as evidence of nonuniform LOFF-states [17][18][19][20]. Apart from the interest in basic science, the proximity effect in S/F structures has great technological importance for the creation of spintronics devices, where the transport properties of the structure are
  • phase. Secondly, we draw attention to the difference between the transport properties of samples s5 and s6. Lowering of the deposition temperature of thick niobium TNb led to polycrystalline growth of the thick Nb layer of sample s6 and a strong decrease of its RRR (Table 1). Such a sensitivity of the
PDF
Album
Full Research Paper
Published 21 Aug 2020

Monolayers of MoS2 on Ag(111) as decoupling layers for organic molecules: resolution of electronic and vibronic states of TCNQ

  • Asieh Yousofnejad,
  • Gaël Reecht,
  • Nils Krane,
  • Christian Lotze and
  • Katharina J. Franke

Beilstein J. Nanotechnol. 2020, 11, 1062–1071, doi:10.3762/bjnano.11.91

Graphical Abstract
  • molecule is freely hanging between the electrodes [7][8][9][10]. While these configurations give access to important transport properties [11][12][13], they do not allow for imaging molecular properties with intramolecular resolution [14]. The latter requires the molecules to be flat lying on a surface. To
PDF
Album
Full Research Paper
Published 20 Jul 2020
Graphical Abstract
  • substitutional defects at the interface of AGNR/ABNNR heterojunctions on the electronic behavior of the proposed RTD is investigated. The effect of substitutional defects on the electronic transport properties of zigzag graphene nanoribbons symmetrically decorated with BN is described in [34]. However, it
PDF
Album
Full Research Paper
Published 24 Apr 2020

High dynamic resistance elements based on a Josephson junction array

  • Konstantin Yu. Arutyunov and
  • Janne S. Lehtinen

Beilstein J. Nanotechnol. 2020, 11, 417–420, doi:10.3762/bjnano.11.32

Graphical Abstract
  • ]. Hence, to enable the phase fluctuation regime, the electric current, I, through a QPSJ, which is just the time derivative of charge, I = dq/dt, should be stabilized. The focus of this manuscript is to study the transport properties of JJ chains to be used as current-biasing elements of a QPSJ. Note that
PDF
Album
Full Research Paper
Published 03 Mar 2020

Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field

  • Levente Máthé and
  • Ioan Grosu

Beilstein J. Nanotechnol. 2020, 11, 225–239, doi:10.3762/bjnano.11.17

Graphical Abstract
  • value even at the Dirac point. The influence of the on-site Coulomb interaction and the magnetic field on the transport properties of the system shows a tendency similar to the previous results obtained for quantum dots connected to metallic electrodes. Most remarkably, we find that the Kondo resonance
  • ][39][40]. The choice of electrodes can have a significant effect on the transport properties of the QD system. In the present work, we study the nonequilibrium Kondo effect and the transport properties in a QD coupled to graphene-based leads by solving the pseudogap Anderson model [36][37][38][39][40
  • interaction [27], respectively. The NCA was also used to study the nonequilibrium Kondo effect in QDs without magnetic fields [13]. In addition, the transport properties of QDs were studied within the framework of modified perturbation theory [20][28][29]. Moreover, the DOS of a single QD was calculated via
PDF
Album
Supp Info
Full Research Paper
Published 20 Jan 2020

Rational design of block copolymer self-assemblies in photodynamic therapy

  • Maxime Demazeau,
  • Laure Gibot,
  • Anne-Françoise Mingotaud,
  • Patricia Vicendo,
  • Clément Roux and
  • Barbara Lonetti

Beilstein J. Nanotechnol. 2020, 11, 180–212, doi:10.3762/bjnano.11.15

Graphical Abstract
  • polymers has been recently published and indicated differences in aggregation among all systems [32]. Going further, the PS might be specifically modified to optimize its affinity towards the desired vector. This has been performed on indocyanine in order to have good transport properties by HAS [131
PDF
Album
Review
Published 15 Jan 2020

Molecular architectonics of DNA for functional nanoarchitectures

  • Debasis Ghosh,
  • Lakshmi P. Datta and
  • Thimmaiah Govindaraju

Beilstein J. Nanotechnol. 2020, 11, 124–140, doi:10.3762/bjnano.11.11

Graphical Abstract
  • excellent transport properties of individual BNAn–dTn nanoarchitectures (nanosheets), which also provided highly sensitive detection of mercury. The displacement of BNA in BNAn–dTn by Hg(II) resulted in a change of morphology of the nanoarchitectures from nanosheets to 1D tapes. This unique strategy
PDF
Album
Review
Published 09 Jan 2020

Recent progress in perovskite solar cells: the perovskite layer

  • Xianfeng Dai,
  • Ke Xu and
  • Fanan Wei

Beilstein J. Nanotechnol. 2020, 11, 51–60, doi:10.3762/bjnano.11.5

Graphical Abstract
  • resulting films benefit from a higher conductivity, better carrier transport properties and a smaller exciton binding energy compared to traditional 2DRP perovskites based on bulky BA. Ultrastable 2DRP PSCs with a certified PCE of 16.6% were obtained. Their initially determined properties were degraded by
PDF
Album
Review
Published 06 Jan 2020

Green and scalable synthesis of nanocrystalline kuramite

  • Andrea Giaccherini,
  • Giuseppe Cucinotta,
  • Stefano Martinuzzi,
  • Enrico Berretti,
  • Werner Oberhauser,
  • Alessandro Lavacchi,
  • Giovanni Orazio Lepore,
  • Giordano Montegrossi,
  • Maurizio Romanelli,
  • Antonio De Luca,
  • Massimo Innocenti,
  • Vanni Moggi Cecchi,
  • Matteo Mannini,
  • Antonella Buccianti and
  • Francesco Di Benedetto

Beilstein J. Nanotechnol. 2019, 10, 2073–2083, doi:10.3762/bjnano.10.202

Graphical Abstract
  • the available tetrahedral sites, which are suggested to play a decisive role in the semiconducting and transport properties of the compound [2][33][82]. It should be noted that for both kuramite and mohite the cubic polymorphs have been reported but only at high temperatures of 680 °C and 780 °C
PDF
Album
Supp Info
Full Research Paper
Published 29 Oct 2019

Improvement of the thermoelectric properties of a MoO3 monolayer through oxygen vacancies

  • Wenwen Zheng,
  • Wei Cao,
  • Ziyu Wang,
  • Huixiong Deng,
  • Jing Shi and
  • Rui Xiong

Beilstein J. Nanotechnol. 2019, 10, 2031–2038, doi:10.3762/bjnano.10.199

Graphical Abstract
  • the electronic structure, the electrical transport properties can be obtained using the Boltzmann transport theory and the constant scattering time approximation as implemented in the BoltzTraP code [23]. To get reliable electrical transport coefficients, a denser k-point mesh of 40 × 40 × 1 is used
  • modulus. All parameters corresponding to the carrier mobility and the effective mass are taken from [17] and summarized in Table 1. As for phononic transport properties, we calculate the thermal conductivity of the lattice using the Boltzmann transport theory as implemented in the Quantum ESPRESSO (QE
  • the HSE06 hybrid functional potential, we use the PBE potential to get the electrical transport properties of the MoO3 monolayer in the following work. The phonon dispersion in the high-symmetry directions of the first Brillouin zone of the MoO3 monolayer is plotted in Figure 1c. There is no imaginary
PDF
Album
Supp Info
Full Research Paper
Published 25 Oct 2019

First principles modeling of pure black phosphorus devices under pressure

  • Ximing Rong,
  • Zhizhou Yu,
  • Zewen Wu,
  • Junjun Li,
  • Bin Wang and
  • Yin Wang

Beilstein J. Nanotechnol. 2019, 10, 1943–1951, doi:10.3762/bjnano.10.190

Graphical Abstract
  • pressure influence the transport properties of the pure BP devices? 3) How does their length influence the conductance of pure BP devices? 4) Can the conclusions from the system of finite size be transferred to larger scales? To answer these questions, first principles calculations were carried out to
  • direction, and 2.102 Å in the vertical direction between two non-equivalent P atomic layers, which is in good agreement with the recognized DFT results [32]. The quantum transport properties of BP devices were implemented by the transport package NanoDCal, which is based on the standard NEGF-DFT method [33
  • conductance versus length of structure is reasonable because the resistance is mainly dominated by the semi-conducting BP section in the scattering region of the pure BP devices. Conclusion We investigated the pressure-dependent quantum transport properties of pure zigzag and armchair BP devices using first
PDF
Album
Full Research Paper
Published 24 Sep 2019

Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study

  • Muhammad Taha Sultan,
  • Adrian Valentin Maraloiu,
  • Ionel Stavarache,
  • Jón Tómas Gudmundsson,
  • Andrei Manolescu,
  • Valentin Serban Teodorescu,
  • Magdalena Lidia Ciurea and
  • Halldór Gudfinnur Svavarsson

Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182

Graphical Abstract
  • interface traps (known as Pb-type defects). These interface traps produce scattering centers that can affect the mobility of charge carriers, thus altering the transport properties [11]. Moreover, sharp interfaces with an abrupt change in the dielectric constant or thermal expansion coefficients give rise
PDF
Album
Full Research Paper
Published 17 Sep 2019

Giant magnetoresistance ratio in a current-perpendicular-to-plane spin valve based on an inverse Heusler alloy Ti2NiAl

  • Yu Feng,
  • Zhou Cui,
  • Bo Wu,
  • Jianwei Li,
  • Hongkuan Yuan and
  • Hong Chen

Beilstein J. Nanotechnol. 2019, 10, 1658–1665, doi:10.3762/bjnano.10.161

Graphical Abstract
  • largest interface spin polarization of ≈55%. Our study on spin-transport properties indicates that the total transmission coefficient at the Fermi level mainly comes from the contribution from the spin up electrons, which are regarded as the majority of the spin electrons. When the two electrodes of the
  • is also an effective way to study the transport properties of a device. A high MR ratio of 174% was reported in a recent work on Fe4N-based CPP-SV, and its spin-polarized quantum transport properties were investigated [12]. The CoFeMnSi-based heterostructure exhibited an ultrahigh tunnel
  • Nanodcal package [33][34], was employed to investigate the spin-transport properties of the Ti2NiAl/Ag/Ti2NiAl device. In our calculations of transport properties, the number of Monkhorst–Pack k-space grids of the left and right electrode is 10 × 10 × 100, and that of the central scattering region is 10
PDF
Album
Full Research Paper
Published 08 Aug 2019

A biomimetic nanofluidic diode based on surface-modified polymeric carbon nitride nanotubes

  • Kai Xiao,
  • Baris Kumru,
  • Lu Chen,
  • Lei Jiang,
  • Bernhard V. K. J. Schmidt and
  • Markus Antonietti

Beilstein J. Nanotechnol. 2019, 10, 1316–1323, doi:10.3762/bjnano.10.130

Graphical Abstract
  • -transport properties, namely, ion selectivity, ion rectification and ion pumping of biological ion channels have been successfully achieved in solid-state materials [14][15][16]. All these controllable active and passive ion transport mechanisms are based on the electrical double layer (EDL) effect [17][18
  • with electron-rich –NH terminal groups. The negative surface charge is a crucial factor in ion transport. To confirm that confinement effects as well as the surface charge control the ion-transport properties [36][37][38], we measured the conductance of KCl electrolyte both in bulk solution and across
  • and the choice of grafted molecules. Conclusion We fabricated a carbon nitride nanotube membrane by simple vapor deposition–polymerization and modified it via a photo-induced functionalization process to alter the ion transport properties. The carbon nitride nanotube membrane showed ion transport that
PDF
Album
Supp Info
Full Research Paper
Published 27 Jun 2019

Alloyed Pt3M (M = Co, Ni) nanoparticles supported on S- and N-doped carbon nanotubes for the oxygen reduction reaction

  • Stéphane Louisia,
  • Yohann R. J. Thomas,
  • Pierre Lecante,
  • Marie Heitzmann,
  • M. Rosa Axet,
  • Pierre-André Jacques and
  • Philippe Serp

Beilstein J. Nanotechnol. 2019, 10, 1251–1269, doi:10.3762/bjnano.10.125

Graphical Abstract
  • ]. This carbon corrosion modifies the mass transport properties of the active layer, especially for the water management, and accelerates the degradation of the Pt NPs [10][11]. One way to reduce the Pt content is to use more active, tailored NPs [12][13], for example, bimetallic NPs with a core–shell
PDF
Album
Supp Info
Full Research Paper
Published 21 Jun 2019

Molecular attachment to a microscope tip: inelastic tunneling, Kondo screening, and thermopower

  • Rouzhaji Tuerhong,
  • Mauro Boero and
  • Jean-Pierre Bucher

Beilstein J. Nanotechnol. 2019, 10, 1243–1250, doi:10.3762/bjnano.10.124

Graphical Abstract
  • Rouzhaji Tuerhong Mauro Boero Jean-Pierre Bucher Université de Strasbourg, IPCMS UMR 70504, 67034 Strasbourg, France 10.3762/bjnano.10.124 Abstract The vibrational excitation related transport properties of a manganese phthalocyanine molecule suspended between the tip of a scanning tunneling
PDF
Album
Full Research Paper
Published 19 Jun 2019

Review of time-resolved non-contact electrostatic force microscopy techniques with applications to ionic transport measurements

  • Aaron Mascaro,
  • Yoichi Miyahara,
  • Tyler Enright,
  • Omur E. Dagdeviren and
  • Peter Grütter

Beilstein J. Nanotechnol. 2019, 10, 617–633, doi:10.3762/bjnano.10.62

Graphical Abstract
  • understanding transport properties of real-world, often heterogeneous materials relevant for energy generation and storage. A number of AFM techniques have been developed to study relevant materials including time-resolved EFM to measure photoexcited charge accumulation and charge transfer [6][9][10][11], time
  • ionic relaxation. This makes any quantification of the transport properties challenging. To investigate the effect of τPLL on the ability to extract parameters from measured signals, a digitially synthesized voltage waveform varying in time as a stretched exponential (Equation 1, β = 0.7) was applied
PDF
Album
Supp Info
Review
Published 01 Mar 2019

Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices

  • Eduardo Nery Duarte de Araujo,
  • Thiago Alonso Stephan Lacerda de Sousa,
  • Luciano de Moura Guimarães and
  • Flavio Plentz

Beilstein J. Nanotechnol. 2019, 10, 349–355, doi:10.3762/bjnano.10.34

Graphical Abstract
  • transport properties of the graphene devices, we performed conductivity measurements as a function of gate voltage (Vg) for several devices produced by different lift-off procedures and cleaning methods. Since the neutrality point was beyond 100 V for several devices, we only consider here the transport by
PDF
Album
Full Research Paper
Published 05 Feb 2019

Relation between thickness, crystallite size and magnetoresistance of nanostructured La1−xSrxMnyO3±δ films for magnetic field sensors

  • Rasuole Lukose,
  • Valentina Plausinaitiene,
  • Milita Vagner,
  • Nerija Zurauskiene,
  • Skirmantas Kersulis,
  • Virgaudas Kubilius,
  • Karolis Motiejuitis,
  • Birute Knasiene,
  • Voitech Stankevic,
  • Zita Saltyte,
  • Martynas Skapas,
  • Algirdas Selskis and
  • Evaldas Naujalis

Beilstein J. Nanotechnol. 2019, 10, 256–261, doi:10.3762/bjnano.10.24

Graphical Abstract
  • growth rate (I series – 28 nm/min; II series – 18 nm/min) enabled an increase of the crystallite size at the same deposition temperature. In relation to the dimensions of the crystallites and transport properties, the increase of the MR (where MR = (ρB − ρ0)/ρ0 and ρB and ρ0 are the field and zero field
PDF
Album
Letter
Published 23 Jan 2019

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)1−x(MnSb)x alloy

  • Leonid N. Oveshnikov,
  • Elena I. Nekhaeva,
  • Alexey V. Kochura,
  • Alexander B. Davydov,
  • Mikhail A. Shakhov,
  • Sergey F. Marenkin,
  • Oleg A. Novodvorskii,
  • Alexander P. Kuzmenko,
  • Alexander L. Vasiliev,
  • Boris A. Aronzon and
  • Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

Graphical Abstract
  • magnetic clusters and spin-polarized carriers. However, to verify this assumption and to reveal the origin of the high-temperature ferromagnetism in GaSb–MnSb alloys, one needs a detailed knowledge of the sample structure. Thus, in this paper we investigate magnetic and transport properties of the GaSb
  • (electron transport) properties. Therefore, these samples are more suitable to reveal the nature of magnetic properties and hole spin-polarization in this material, which is the aim of this paper. Main parameters of the studied samples are presented in Table 1. Figure 1a shows typical curves of the
PDF
Album
Full Research Paper
Published 14 Sep 2018
Other Beilstein-Institut Open Science Activities