Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• quickly realize positioning and alignment of CNTs in 10–60 s. GR-NEM switches Based on the large-scale fabrication of graphene (GR) using CVD and oxygen plasma etching, GR-NEM switches have attracted the attention of researchers. Table 2 summarizes GR-NEM switch structures described in the literature. Two

• performance of the switches can also be affected by the surrounding environment. Capillary forces are occurring due to the humid environment during wet etching [24]. In addition, the design of NEM switches needs to consider the unique characteristics of the materials. For example, the shape of CNTs not only

Selected properties of Al_xZn_yO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target

• Witold Posadowski,
• Artur Wiatrowski,
• Jarosław Domaradzki and
• Michał Mazur

Beilstein J. Nanotechnol. 2022, 13, 344–354, doi:10.3762/bjnano.13.29

• the target (on-axis geometry) probably results from the destructive effect of the bombardment of the forming AlxZnyO films with negative oxygen ions, which was reported by many authors [11][13][14][15][17]. Negative oxygen ions (and also secondary electrons) directly form in the target etching zone

Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

• Hiroya Tanaka,
• Shinya Ohno,
• Kazushi Miki and
• Masatoshi Tanaka

Beilstein J. Nanotechnol. 2022, 13, 172–181, doi:10.3762/bjnano.13.12

• oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etching occur. A precise temperature–pressure growth mode diagram was obtained via careful measurements for Si(113), and the results were compared with those for Si(111) in the present work and Si(001) in

• series of STM images of the filled state for oxidation at an oxygen pressure of 1.3 × 10−5 Pa and a sample temperature of 820 K. Under these conditions, only oxidation occurs; etching does not. The circle (a) shows one of the initial oxidation sites, appearing as a dark depression on the terrace. It is

• oxidation may occur at the extended terrace formed by the decorated silicon atoms. In contrast, the step position indicated by the broken line remains almost constant at the lower-right corner. Later, we will report that the step position can be pinned by the oxide. Oxidation and etching regime Figure 3

A comprehensive review on electrospun nanohybrid membranes for wastewater treatment

• Senuri Kumarage,
• Imalka Munaweera and
• Nilwala Kottegoda

Beilstein J. Nanotechnol. 2022, 13, 137–159, doi:10.3762/bjnano.13.10

• the unique properties of matter at dimensions between 1 and 100 nm. Since the discovery of nanotechnology, it has evolved continuously and now has become a technology that is indispensable in diverse disciplines. Among many techniques such as sintering, stretching, track etching, template leaching

• purification and treatment. The electrospun membranes have shown potential to overcome the bottlenecks of conventional membranes used in water purification, fabricated by techniques such as phase inversion, sintering, stretching, and track-etching. For instance, sintering and stretching, which are commonly

• [19]. Track etching also produces membranes of weak mechanical strength, and the technique is applicable onlyl for a limited number polymers. The track-etched membranes have low porosity and the technique is more expensive than electrospinning [1]. Phase separation is also a versatile membrane

Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

Design aspects of Bi₂Sr₂CaCu₂O_8+δ THz sources: optimization of thermal and radiative properties

• Mikhail M. Krasnov,
• Natalia D. Novikova,
• Roger Cattaneo,
• Alexey A. Kalenyuk and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 1392–1403, doi:10.3762/bjnano.12.103

• on a flat portion of Bi-2212 surface, followed by argon-ion etching of the unprotected parts of Au and Bi-2212, the deposition of insulating SiO2 or CaF2 layers and a lift-off of the photoresist at the line. The depth of Bi-2212 etching at this stage (dm ≈ 200–400 nm) defines the height of mesas and

• photolithography and argon-ion etching. Mesa structures are formed at the overlap between the line and the electrodes, as indicated in Figure 1a. Figure 2a,b shows current–voltage (I–V) characteristics of mesas of whisker- and crystal-based devices, respectively. The I–V curves are fairly similar. They contain

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• structure of the prepared nanowires, unlike simple structures, enables further more extensive engineering of nanowire properties by specific technological steps (e.g., thermal annealing, etching, doping, and filling) in order to obtain, for example, catalytic nanowires with huge specific surface or hollow

Plasmon-enhanced photoluminescence from TiO₂ and TeO₂ thin films doped by Eu³⁺ for optoelectronic applications

• Marcin Łapiński,
• Jakub Czubek,
• Katarzyna Drozdowska,
• Anna Synak,
• Wojciech Sadowski and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2021, 12, 1271–1278, doi:10.3762/bjnano.12.94

• occur [39]. Additionally, a depth profile of concentration was measured. XPS results after etching of the TeO2:Eu film showed good chemical uniformity over the whole thickness of the layer, which is shown in Figure 8. After 8 min of etching the film was completely removed from the Corning glass

Morphology-driven gas sensing by fabricated fractals: A review

• Vishal Kamathe and
• Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

• -assisted chemical etching was used by Qin et al. [79] to prepare a dendritic array of Si/WO3 NW composites, which was tested for the detection of NO2 gas at room temperature. Figure 17a–e SEM and high-resolution transmission electron microscopy (HR-TEM) images of Si/WO3 NWs. Figure 17f shows the XRD

An overview of microneedle applications, materials, and fabrication methods

• Zahra Faraji Rad,
• Philip D. Prewett and
• Graham J. Davies

Beilstein J. Nanotechnol. 2021, 12, 1034–1046, doi:10.3762/bjnano.12.77

• biotherapeutics, drugs, and vaccines through the skin. A wide range of microneedle structure, design, geometry, and microneedle array densities is manufactured using different rapid prototyping and microfabrication technologies such as deep reactive ion etching (DRIE) [2], lithography [3], hot embossing [4], and

• microneedles in high-density two-dimensional arrays, although the resulting microneedles are restricted to lower aspect ratio and shorter height compared to in-plane microneedles if traditional microfabrication methods, such as wet and dry etching, are used. Hollow microneedles contain a lumen or internal

• injection moulding [61], wet chemical etching [75], reactive ion etching [2][76], hot embossing [4][5], laser drilling [77], lithography plus electroforming [78][79], drawing lithography [80][81], two-photon polymerization [5][82], and 3D printing [83][84]. To date, DRIE of silicon; micromoulding

Uniform arrays of gold nanoelectrodes with tuneable recess depth

• Elena O. Gordeeva,
• Ilya V. Roslyakov,
• Alexey P. Leontiev,
• Alexey A. Klimenko and
• Kirill S. Napolskii

Beilstein J. Nanotechnol. 2021, 12, 957–964, doi:10.3762/bjnano.12.72

• alternative approach includes bulk electrode structuring by deposition or etching techniques using self-assembled arrays of colloidal nanoparticles [15], liquid crystals [16], or track-etched membranes [17][18][19] as template or mask, respectively. Among porous templates, anodic aluminium oxide (AAO) allows

• mechanical polishing or ion etching and subsequent re-deposition of the current collector. It is worth noting that a great number of Au electrodes within the array is extremely important for a practical application of NEAs under the kinetic control of a target electrochemical process. In this case, the

• anodizing stage, the remaining Al was selectively dissolved in 10 vol % Br2 solution in CH3OH. Then, the barrier layer of the AAO template was removed by chemical etching in 3.5 M H3PO4 with electrochemical detection of the pore opening moment as described elsewhere [40]. The prepared AAO templates were

In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures

• Olena M. Kapran,
• Roman Morari,
• Taras Golod,
• Evgenii A. Borodianskyi,
• Vladimir Boian,
• Andrei Prepelita,
• Nikolay Klenov,
• Anatoli S. Sidorenko and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 913–923, doi:10.3762/bjnano.12.68

• the vacuum. We use a Nb target (99.95% purity) for deposition of S-layers, Co (99.95% purity) for F-layers, and Si (99.999%) for seeding bottom and protective top layers. MLs are grown on a Si(111) wafer. Prior to deposition, targets were precleaned by plasma-etching for 3 min and in addition for 1

• were used for the calibration of the etching rates of the films. MLs are patterned into micrometer-scale bridges with multiple contacts using photolithography and reactive ion etching. A scanning electron microscopy (SEM) image of one of the studied samples is shown in Figure 1a. Control of the

Comprehensive review on ultrasound-responsive theranostic nanomaterials: mechanisms, structures and medical applications

• Sepand Tehrani Fateh,
• Lida Moradi,
• Elmira Kohan,
• Michael R. Hamblin and
• Amin Shiralizadeh Dezfuli

Beilstein J. Nanotechnol. 2021, 12, 808–862, doi:10.3762/bjnano.12.64

Fate and transformation of silver nanoparticles in different biological conditions

• Barbara Pem,
• Marija Ćurlin,
• Darija Domazet Jurašin,
• Valerije Vrček,
• Rinea Barbir,
• Vedran Micek,
• Raluca M. Fratila,
• Jesus M. de la Fuente and
• Ivana Vinković Vrček

Beilstein J. Nanotechnol. 2021, 12, 665–679, doi:10.3762/bjnano.12.53

• found in PBS and BP incubated with different AgNPs (Figure 4) may, thus, be an indirect evidence of AgCl crystal formation in PBS and BP, which is possible only if the ionic Ag form is released form the AgNP surface by an oxidative etching process. Such release may be accelerated in the presence of

• etching process of AgNPs. The reformation of AgNPs from primary particles or released Ag+ was evidenced by the incubation of AgNO3 in liver and brain homogenates which led to the formation of small AgNPs. Moreover, NMR experiments demonstrated the crucial role of biothiols in this reformation process. Our

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• –1016 ions/cm2, the rate of subsequent wet-etching of the irradiated regions with hydrofluoric acid was found to increase by up to a factor of three (for Si3N4) and five (for SiO2). The change was attributed to ion-induced defects and demonstrates another potential form of HIM-enabled nanofabrication

• , namely site-specific ion-enhanced etching with high spatial resolution. Similarly, site-selective etching of MoS2 has been demonstrated using helium ion irradiation to create defective regions that become activated for oxygen adsorption and subsequent oxidative etching when heated in air [68]. Helium ion

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• /interface needs to be properly prepared. In the experiments described here we examined eight different paths of GaAs surface treatment (cleaning, etching, passivation) which resulted in different external quantum efficiency (EQE) values of the tested photovoltaic (PV) cells. Atomic force microscopy (AFM

• deposition method is ALD [14][15]. Removal of native oxide layer and protection of such an obtained surface can be done in many ways. In the case of wet-etching techniques, the most popular GaAs native oxide etchants are based on acidic and basic solutions. In order to etch the oxide, one can treat the

• surface with an acidic/base aqueous solution (e.g., HCl/H2O, NH4OH/H2O) [16]. If not only the oxide layer but also the suboxide layer of GaAs need to be etched, different methods can be utilized which combine both processes: semiconductor surface oxidation and etching. In this case, also acidic and basic

Exploring the fabrication and transfer mechanism of metallic nanostructures on carbon nanomembranes via focused electron beam induced processing

• Christian Preischl,
• Linh Hoang Le,
• Elif Bilgilisoy,
• Armin Gölzhäuser and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2021, 12, 319–329, doi:10.3762/bjnano.12.26

• without any changes, aside from oxidation. Here we demonstrate that iron as well as cobalt oxide structures on top of a cross-linked SAM on Ag/mica do change more significantly. The Fe(NO3)3 solution used for etching of the Ag layer also dissolves the cobalt oxide structures and causes dissolution and

• reduction of the iron structures. These results demonstrate that the fabrication of hybrids of metallic nanostructures onto organic 2D materials is an intrinsically complex procedure. The interactions among the metallic deposits, the substrate for the growth of the SAM, and the associated etching/dissolving

• nanostructures by investigating the fabrication and transfer on the example of a SAM of TPT on a silver substrate. Consequently, a different chemical etching process is needed for the lift-off process during the transfer. In the case of gold, an etching solution of KI/I2/H2O is used. Whereas in this approach

The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication

• Victor Deinhart,
• Lisa-Marie Kern,
• Jan N. Kirchhof,
• Sabrina Juergensen,
• Joris Sturm,
• Enno Krauss,
• Thorsten Feichtner,
• Sviatoslav Kovalchuk,
• Michael Schneider,
• Dieter Engel,
• Bastian Pfau,
• Bert Hecht,
• Kirill I. Bolotin,
• Stephanie Reich and
• Katja Höflich

Beilstein J. Nanotechnol. 2021, 12, 304–318, doi:10.3762/bjnano.12.25

• sheet was covered by a 500 nm thick PMMA layer. After etching the copper foil, the graphene sheet was transferred onto a SiN membrane with a regular grid of holes. The transfer process is described in detail elsewhere [52]. The SiN membrane was covered with a thin layer of gold, which allowed us to

Numerical analysis of vibration modes of a qPlus sensor with a long tip

• Kebei Chen,
• Zhenghui Liu,
• Yuchen Xie,
• Chunyu Zhang,
• Gengzhao Xu,
• Wentao Song and
• Ke Xu

Beilstein J. Nanotechnol. 2021, 12, 82–92, doi:10.3762/bjnano.12.7

• purity of 99.95%. The tip was obtained by AC electrochemical etching in NaOH solution at a concentration of 1 mol·L−1. A tungsten wire with a length of 942 μm was attached to the end of the tuning fork with Torr seal epoxy. The angle between the tungsten wire and the prong was 65°. The excitation signal

ZnO and MXenes as electrode materials for supercapacitor devices

• Ameen Uddin Ammar,
• Ipek Deniz Yildirim,
• Feray Bakan and
• Emre Erdem

Beilstein J. Nanotechnol. 2021, 12, 49–57, doi:10.3762/bjnano.12.4

• batteries [15][20][21][23]. Gogotsi et al. [24][25][26], who are the pioneers of MXene materials, have defined the relation to MAX phases in a very clear way: MXenes can be produced by etching the A layer from MAX phases. The suffix “ene” is added to emphasize the similarity to graphene. MAX phases are a

• carbon and/or nitrogen [15][18][19][21][23] with n = 1–3. In addition, MAX phases and MXenes are conducting ceramics [15][18][27]. Several etching processes have been developed to synthesize particular MXenes. With the results not meeting with expectations, the scientists understood that MAX phases are

• structure. After the etching process, MXenes have a great number of active groups, such as –OH and =O, which results in superior hydrophilicity, chemical reactivity, and large contact area. This implies a potential of MXenes for the use in supercapacitors [16][18][19][22][23][28]. Moreover, MXenes can be

Towards 3D self-assembled rolled multiwall carbon nanotube structures by spontaneous peel off

• Jonathan Quinson

Beilstein J. Nanotechnol. 2020, 11, 1865–1872, doi:10.3762/bjnano.11.168

• ]. However, support-free 3D structures typically require extra synthesis steps. “Sponges” or “cages” can be produced by freeze-drying preformed CNTs [10] or by etching template materials [11]. A way to tune CNT properties further is to introduce other elements in the carbon network (e.g., nitrogen [12][13

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• , AlGaN/AlN/GaN NWs with high electron mobility, carrier density, and mechanical flexibility have become good candidates for highly sensitive and flexible strain sensors. In this work, we use a top-down two-step process, including inductively coupled plasma (ICP) dry etching and selective electrochemical

• (EC) wet etching, to prepare AlGaN/AlN/GaN heterojunction NWs with a controllable size. After the lift-off, a single NW is transferred to a flexible poly(ethylene terephthalate) (PET) substrate and is fixed by indium tin oxide (ITO) electrodes to form an ohmic contact for the strain sensor. Under

• spreading of the current. Next, 500 nm of an unintentionally doped GaN layer was deposited to protect the lower layer during the selective EC etching. A heavily doped GaN (N+-GaN) sacrificial layer, sandwiched by two thin N++-GaN layers was inserted under the AlGaN/AlN/GaN layer to enhance the conductivity

Unravelling the interfacial interaction in mesoporous SiO₂@nickel phyllosilicate/TiO₂ core–shell nanostructures for photocatalytic activity

• Bridget K. Mutuma,
• Xiluva Mathebula,
• Isaac Nongwe,
• Bonakele P. Mtolo,
• Boitumelo J. Matsoso,
• Rudolph Erasmus,
• Zikhona Tetana and
• Neil J. Coville

Beilstein J. Nanotechnol. 2020, 11, 1834–1846, doi:10.3762/bjnano.11.165

• formation of the NiPS, the average pore size increased to 6.3 nm in the mSiO2@NiPS spheres (Table 1). This can be attributed to the formation of the sheet-like NiPS on the SiO2 surface and/or a possible partial etching of silica during the deposition-precipitation process by the alkaline solution (urea

Electron beam-induced deposition of platinum from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Aya Mahgoub,
• Hang Lu,
• Rachel M. Thorman,
• Konstantin Preradovic,
• Titel Jurca,
• Lisa McElwee-White,
• Howard Fairbrother and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2020, 11, 1789–1800, doi:10.3762/bjnano.11.161

• has very high design flexibility and does not require masks or resist and development. Moreover, it does not need to be performed in a clean room with multiple process stages, such as spin coating, deposition, development, and etching; it is a single step process [1]. The process starts by injecting a

• exceeding the maximum pressure allowed in the SEM chamber (approximately 10−4 mbar). A silicon substrate was used for all deposition experiments, patterned such that circular areas of pristine silicon are surrounded by black silicon (obtained by reactive ion etching). The black silicon area aids in focusing

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• second area of interest was the bottom of a deep trench (area 2 in Figure 2). Deep trenches were fabricated by dry etching pores with a high aspect ratio and a diameter of 1 µm. During the FEOL processing, trenches were filled with a dielectric layer, followed by an in situ highly phosphorus-doped