Irradiation-driven molecular dynamics simulation of the FEBID process for Pt(PF₃)₄

• Alexey Prosvetov,
• Alexey V. Verkhovtsev,
• Gennady Sushko and
• Andrey V. Solov’yov

Beilstein J. Nanotechnol. 2021, 12, 1151–1172, doi:10.3762/bjnano.12.86

• . The methodology can also be adjusted to simulate the nanostructure formation by other nanofabrication techniques using electron beams, such as direct electron beam lithography. In the present study, the methodology is applied to the IDMD simulation of the FEBID of Pt(PF3)4, a widely studied precursor

• , novel techniques exploiting the irradiation of nanosystems with collimated electron and ion beams have been developed [2][3]. One of these techniques is electron beam lithography (EBL), which is similar to conventional optical lithography but relies on the change of solubility after electron exposure of

An overview of microneedle applications, materials, and fabrication methods

• Zahra Faraji Rad,
• Philip D. Prewett and
• Graham J. Davies

Beilstein J. Nanotechnol. 2021, 12, 1034–1046, doi:10.3762/bjnano.12.77

• biotherapeutics, drugs, and vaccines through the skin. A wide range of microneedle structure, design, geometry, and microneedle array densities is manufactured using different rapid prototyping and microfabrication technologies such as deep reactive ion etching (DRIE) [2], lithography [3], hot embossing [4], and

• injection moulding [61], wet chemical etching [75], reactive ion etching [2][76], hot embossing [4][5], laser drilling [77], lithography plus electroforming [78][79], drawing lithography [80][81], two-photon polymerization [5][82], and 3D printing [83][84]. To date, DRIE of silicon; micromoulding

• ; photolithography; and Lithographie, Galvanoformung, Abformung or lithography, electroplating, moulding (LIGA), using deep X-ray lithography, are the most extensively used manufacturing technologies for microneedle fabrication, although fabrication of longer microneedles (>400 μm) is difficult with some of these

Uniform arrays of gold nanoelectrodes with tuneable recess depth

• Elena O. Gordeeva,
• Ilya V. Roslyakov,
• Alexey P. Leontiev,
• Alexey A. Klimenko and
• Kirill S. Napolskii

Beilstein J. Nanotechnol. 2021, 12, 957–964, doi:10.3762/bjnano.12.72

• direct-writing using electron beam lithography [11][12] or ion beam milling [13][14]) are limited by the ensemble area and expensive in mass production, but allow one to precisely tune the parameters of an array (a geometry of individual electrodes and the distance between them) over a wide range. An

The role of convolutional neural networks in scanning probe microscopy: a review

• Ido Azuri,
• Irit Rosenhek-Goldian,
• Neta Regev-Rudzki,
• Georg Fantner and
• Sidney R. Cohen

Beilstein J. Nanotechnol. 2021, 12, 878–901, doi:10.3762/bjnano.12.66

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• ; focused helium ion beam-induced deposition; focused helium ion beam milling; helium ion beam lithography; helium ion implantation; Introduction Since the helium ion microscope (HIM) was introduced 15 years ago [1][2][3], over one hundred HIMs have been installed worldwide and over one thousand research

• also lead to a nanofabrication outcome. For example, localized swelling by ion implantation can be used to pattern nanoscale surface topographies, ion-induced collisional mixing can restructure buried interfaces, and ion-induced chemical changes can be used for resist-based lithography. In the

• following, the field of materials modification research using the HIM is reviewed, subdivided into the following areas: 1. defect engineering, 2. ion implantation, 3. irradiation-induced restructuring, 4. resist-based lithography, 5. direct-write lithography/milling (including gas-assisted milling), and 6

On the stability of microwave-fabricated SERS substrates – chemical and morphological considerations

• Limin Wang,
• Aisha Adebola Womiloju,
• Christiane Höppener,
• Ulrich S. Schubert and
• Stephanie Hoeppener

Beilstein J. Nanotechnol. 2021, 12, 541–551, doi:10.3762/bjnano.12.44

• on the substrates [8], the synthesis of complex nanoparticle structures with tunable interparticle gap sizes [9], the utilization of micro- and nanofabricated structures obtained by lithography techniques [10][11][12] comprising nanodisk arrays [13], nanoholes [14][15], nanocups [16][17

Exploring the fabrication and transfer mechanism of metallic nanostructures on carbon nanomembranes via focused electron beam induced processing

• Christian Preischl,
• Linh Hoang Le,
• Elif Bilgilisoy,
• Armin Gölzhäuser and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2021, 12, 319–329, doi:10.3762/bjnano.12.26

• 3.0 × 10−7 mbar, this corresponds to a local pressure at the surface of about 9 × 10−6 mbar [37]. All electron exposures for SEM and lithography were performed at a beam energy of 15 kV and probe currents of 400 pA and 3 nA, respectively. The lithographic processes were controlled via a self-developed

• lithography application based on LabView 8.6 (National Instruments) and a high-speed DAC PCIe card (M2i.6021-exp, Spectrum GmbH, Germany). SEM images were acquired with SmartSEM (Zeiss) and are shown with minor contrast and brightness adjustments only. For Auger electron spectroscopy the electron beam of the

The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication

• Victor Deinhart,
• Lisa-Marie Kern,
• Jan N. Kirchhof,
• Sabrina Juergensen,
• Joris Sturm,
• Enno Krauss,
• Thorsten Feichtner,
• Sviatoslav Kovalchuk,
• Michael Schneider,
• Dieter Engel,
• Bastian Pfau,
• Bert Hecht,
• Kirill I. Bolotin,
• Stephanie Reich and
• Katja Höflich

Beilstein J. Nanotechnol. 2021, 12, 304–318, doi:10.3762/bjnano.12.25

• by measuring the bright optical modes [59]. The target geometry for all fabrication techniques is a particle radius of 45 nm with a gap size of 35 nm. This is the geometry that can reliably fabricated by resist-based electron beam lithography on physically sputtered gold layers (cf. Figure 7a). Later

Gold(I) N-heterocyclic carbene precursors for focused electron beam-induced deposition

• Cristiano Glessi,
• Aya Mahgoub,
• Cornelis W. Hagen and
• Mats Tilset

Beilstein J. Nanotechnol. 2021, 12, 257–269, doi:10.3762/bjnano.12.21

• and some volatile fragments. The technique has been employed in applications such as the fabrication of nanoconnectors [5], extreme ultra-violet lithography (EUVL) mask repair [6], AFM probe tips [7][8][9], nanodevices for plasmonics [10], gas sensors [11][12], optoelectronics [13], and magnetic [14

• ][15] and biomedical applications [16]. FEBID provides a flexible direct-write technique to fabricate complex 3D structures, which are hard to realize using resist-based planar lithography processes. However, when using organometallic precursors, usually, undesired dissociation fragments also end up in

Scanning transmission helium ion microscopy on carbon nanomembranes

• Daniel Emmrich,
• Annalena Wolff,
• Nikolaus Meyerbröker,
• Jörg K. N. Lindner,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2021, 12, 222–231, doi:10.3762/bjnano.12.18

• established as a key nanofabrication tool for milling [7][8][9], defect engineering [10][11], and resist-based lithography [12][13], overcoming the resolution limitations of other FIB techniques [14][15]. Both bulk samples as well as thin membranes have been structured using the HIM. On membranes, the sputter

A review on the green and sustainable synthesis of silver nanoparticles and one-dimensional silver nanostructures

• Sina Kaabipour and
• Shohreh Hemmati

Beilstein J. Nanotechnol. 2021, 12, 102–136, doi:10.3762/bjnano.12.9

• ], lithography [120][121], spray pyrolysis [122][123][124], radiolysis [125][126][127][128], arc discharge [129][130][131][132][133], and photoirradiation [134][135][136] have been utilized to synthesize various morphologies of silver nanostructures with varied size and size distribution. The physical synthesis

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• lithography was used to form a striped pattern, which was used as a mask for ICP dry etching. The depth of the ICP dry etching needs to be greater than 1 µm (the thickness of the AlGaN/AlN/GaN heterojunction is 931.5 nm). The purpose is to expose the sacrificial layer for the subsequent EC wet etching. Then

• , the striped photoresist mask, which covers the surface, was removed with acetone to obtain the structure shown in Figure 2a. The settings for the stripe width (900 nm) and the interval between the stripes (3 μm) were controlled during stepper lithography. After ICP dry etching, the sample was placed

• suitable applied electric field, the mechanism of EC etching can be described by: The corresponding SEM images are shown in Figure 2d–f. After ICP dry etching, a regular stripe array was formed (Figure 2d) and the shape of the NWs was controlled in advance during stepper lithography. Because of its high

Absorption and photoconductivity spectra of amorphous multilayer structures

• Oxana Iaseniuc and
• Mihail Iovu

Beilstein J. Nanotechnol. 2020, 11, 1757–1763, doi:10.3762/bjnano.11.158

• ; photocurrent; transmission spectra; Introduction The As–S–Se, Ge–As–Se, and Ge–As–S ternary glass systems currently attract a lot of attention because of their wide application in IR optics, non-linear optics, photonics, optoelectronics, and as recording media for holography and e-beam lithography [1][2][3

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

• Nico Klingner,
• Gregor Hlawacek,
• Paul Mazarov,
• Wolfgang Pilz,
• Fabian Meyer and
• Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

• resolution. This mass range is of interest due to the interaction of the ions with the near-surface region and, among other use cases, the application of these ions for indirect or resist-aided lithography [3]. The introduction of the helium ion microscope (HIM) [4], working with a gas field ion source (GFIS

Functional nanostructures for electronics, spintronics and sensors

• Anatolie S. Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1704–1706, doi:10.3762/bjnano.11.152

• technology including lift-off electron-beam lithography followed by ultra-high-vacuum deposition of materials that was used for fabrication of nanostructured quasi-1D chains of Josephson junctions. This was followed by the work of Mohammed et al. [12] who presented a smart vacuum technology for the design of

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

• Serguei Chiriaev,
• Luciana Tavares,
• Vadzim Adashkevich,
• Arkadiusz J. Goszczak and
• Horst-Günter Rubahn

Beilstein J. Nanotechnol. 2020, 11, 1693–1703, doi:10.3762/bjnano.11.151

• the basis of a comparative study of the role of material-related factors in the FIB-induced surface patterning. PMMA and PC polymers are especially interesting for many reasons: PMMA is widely used as a positive resist for X-ray, deep UV [8], electron and ion-beam lithography [9]. Structural

• PMMA, it has a much higher mechanical toughness, thermal resistance, chemical stability, and as PMMA, it is widely used in optical applications. A range of publications show that, owing to its radiation susceptibility, PC can be used as a positive or negative resist for electron beam lithography [15

Fabrication of nano/microstructures for SERS substrates using an electrochemical method

• Jingran Zhang,
• Tianqi Jia,
• Xiaoping Li,
• Junjie Yang,
• Zhengkai Li,
• Guangfeng Shi,
• Xinming Zhang and
• Zuobin Wang

Beilstein J. Nanotechnol. 2020, 11, 1568–1576, doi:10.3762/bjnano.11.139

• machined by using lithography-based method [15][16][17][18][19][20]. Additionally, nanostructures are also fabricated by hybrid lithography [21][22][23][24][25][26] methods combined with dry etching or wet etching. For example, the commercial Klarite substrate [21][22][23] machined by electron beam

• lithography (EBL) and wet etching consists of 1 μm deep square-based pyramidal pits in the silicon surface. A rhodamine solution (10−4 mol·L−1) is then detected using the Klarite substrate. Candeloro et al. [24] employed EBL and reactive ion etching to machine nanoholes of 400 nm diameter and 50 nm depth

• achieved for 4-mercaptobenzoic acid molecules on the arrayed Au nanoholes. However, lithography-based methods have limitations, as they are inefficient and cannot be exploited for mass production. In addition, it is challenging to use the existing methods to fabricate more complex nanostructures. Focused

Electrokinetic characterization of synthetic protein nanoparticles

• Daniel F. Quevedo,
• Cody J. Lentz,
• Adriana Coll de Peña,
• Yazmin Hernandez,
• Nahal Habibi,
• Rikako Miki,
• Joerg Lahann and
• Blanca H. Lapizco-Encinas

Beilstein J. Nanotechnol. 2020, 11, 1556–1567, doi:10.3762/bjnano.11.138

• and −17.4 ± 0.6 mV SPNP-BSA-555. The EK devices to study these particles were made using microdevice manufacturing techniques as previously described. Standard soft lithography techniques were used to cast polydimethylsiloxane (PDMS) onto molds, and the resulting microdevices were sealed with PDMS

• posts (Figure 2b and Figure S1, Supporting Information File 1) were made from PDMS employing standard soft lithography techniques. To create a device, PDMS (Dow Corning, Midland, MI) was cast onto a negative replica mold made with a silicon wafer (Silicon Inc., Boise, ID) and an SU-8 3050 photoresist

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• fabrication uses cost-efficient subprocesses and omits expensive processes such as nanopatterning with high-resolution lithography. One low-cost method for the fabrication of such high aspect ratio templates and structures is metal-assisted chemical etching (MACE). This process uses a noble metal catalyst

• layers have been patterned with standard photo-resist and a proximity lithography step. The selected full wafer pattern consists of a series of open quadratic test fields. These were transferred from the photo-resist to the PMMA layer using a reactive ion etching process with oxygen. In contrast to the

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• electronic and structural behaviour of the Si(100) surface [18]. The addition of hydrogen to surface silicon atoms saturates all available bonds [19] and three surface reconstructions are commonly observed. The 2 × 1 phase – frequently used in hydrogen lithography, and can be prepared in situ resulting in

Controlling the proximity effect in a Co/Nb multilayer: the properties of electronic transport

• Sergey Bakurskiy,
• Mikhail Kupriyanov,
• Nikolay V. Klenov,
• Igor Soloviev,
• Andrey Schegolev,
• Roman Morari,
• Yury Khaydukov and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1336–1345, doi:10.3762/bjnano.11.118

• Stuttgart. The lithography was made in the Stockholm University. Funding We acknowledge the partial financial support from Grant No. 20-69-47013 of the Russian Science Foundation (theoretical approach and calculations). R. Morari is grateful for the support from the Russian Ministry of Education and Science

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• synthesized using a CVD microreactor method, described in detail in [33], directly on 285 nm SiO2/Si substrates, which also served as the back-gate in the FET configuration. MoS2 flakes were contacted with electrodes using standard electron beam lithography on polymethyl methacrylate (PMMA) resist, followed

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• have previously been difficult to obtain as sample preparation of such samples for SEM or TEM are often incompatible with the needs of high-resolution AFM measurements. AFM is also useful in assisting helium ion beam lithography. Many resists, including poly(methyl methacrylate) (PMMA), have higher

• sensitivities to helium ion irradiation than to electron irradiation in terms of charge per area [14]. Patterning resolution down to 4 nm has been demonstrated on HSQ resist [15], surpassing electron beam lithography, which greatly suffers from the proximity effect. In a combined AFM–HIM setup, the AFM could be

• to be navigated onto the region of interest (Figure 2b,c) to perform AFM topography imaging (Figure 2d). PMMA has traditionally been used as a positive resist in electron beam lithography. Helium ion beam lithography has emerged as a powerful technique to achieve even smaller feature size thanks to

3D superconducting hollow nanowires with tailored diameters grown by focused He⁺ beam direct writing

• Rosa Córdoba,
• Alfonso Ibarra,
• Dominique Mailly,
• Isabel Guillamón,
• Hermann Suderow and
• José María De Teresa

Beilstein J. Nanotechnol. 2020, 11, 1198–1206, doi:10.3762/bjnano.11.104

• -patterned Ti pads (150 nm in thickness) to prevent charge effects on the insulator layer (250 nm thick of SiO2) thermally grown on a silicon wafer [23]. These chips were fabricated following a routine recipe for UV optical lithography using a lift-off method. For the electron tomography and (HR)STEM

• Information File 120: Electron tomography_transversal section_hollow NW grown at 7 pA and 1.009 nC. Acknowledgements The authors highly acknowledge Rubén Valero for the UV lithography process. The microscopy works have been conducted in the “Laboratorio de Microscopías Avanzadas” at “Instituto de Nanociencia

Highly sensitive detection of estradiol by a SERS sensor based on TiO₂ covered with gold nanoparticles

• Andrea Brognara,
• Ili F. Mohamad Ali Nasri,
• Beatrice R. Bricchi,
• Andrea Li Bassi,
• Caroline Gauchotte-Lindsay,
• Matteo Ghidelli and
• Nathalie Lidgi-Guigui

Beilstein J. Nanotechnol. 2020, 11, 1026–1035, doi:10.3762/bjnano.11.87

• effects [6][7][8]. Many surfaces were proposed for SERS including rough metallic surfaces [9][10], colloidal solutions [11], and structures with controlled size, distance and shape obtained via lithography techniques [2][5][12]. However, these techniques can be time-consuming and expensive. Recently, the