Comparative study of sculptured metallic thin films deposited by oblique angle deposition at different temperatures

• Susann Liedtke,
• Christoph Grüner,
• Jürgen W. Gerlach and
• Bernd Rauschenbach

Beilstein J. Nanotechnol. 2018, 9, 954–962, doi:10.3762/bjnano.9.89

• substrate temperature is found for those films. Keywords: biaxial texture; metallic tilted columns; oblique angle deposition; porosity; shadowing; thin films; Introduction The ability to produce highly porous metallic thin films is a substantial issue for a large number of applications [1]. For instance

• deposited obliquely at an incidence angle of 82° and a substrate temperature of 300 K (left) and at 77 K (right). Especially the cross-sectional SEM images in Figure 1 reveal significant morphological differences. Al columns deposited at 300 K exhibit a columnar diameter d = 126 ± 25 nm, approximately. For

• . However, as the substrate is cooled down to 77 K, the mobility of the incoming Al atoms on the column surface is significantly reduced. This supports the growth of columns with a high aspect ratio. To conclude, the substrate temperature and in turn surface diffusion have a significant influence on the

Towards the third dimension in direct electron beam writing of silver

• Katja Höflich,
• Jakub Mateusz Jurczyk,
• Katarzyna Madajska,
• Maximilian Götz,
• Luisa Berger,
• Carlos Guerra-Nuñez,
• Caspar Haverkamp,
• Iwona Szymanska and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 842–849, doi:10.3762/bjnano.9.78

• carbonate. The experiments started with reproducing the results from AgO2Me2Bu using a GIS heating temperature of 150 °C. In case of AgO2F5Prop, earlier studies [27] showed the successful deposition for a GIS temperature of 175 °C and a substrate temperature of 160 °C. To minimize unwanted thermal effects

• during and after deposition these temperatures were decreased to 140 °C GIS temperature and ca. 155 °C stage temperature (the latter being equivalent to ca. 125 °C substrate temperature). The used GIS temperature still ensured the full evaporation of AgO2F5Prop with a mass loss of 3 mg per hour. This

Electron interactions with the heteronuclear carbonyl precursor H₂FeRu₃(CO)₁₃ and comparison with HFeCo₃(CO)₁₂: from fundamental gas phase and surface science studies to focused electron beam induced deposition

• Ragesh Kumar T P,
• Paul Weirich,
• Lukas Hrachowina,
• Marc Hanefeld,
• Ragnar Bjornsson,
• Helgi Rafn Hrodmarsson,
• Sven Barth,
• D. Howard Fairbrother,
• Michael Huth and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2018, 9, 555–579, doi:10.3762/bjnano.9.53

• produced in the initial decomposition step can also be important (e.g., PF3 desorption from the Pt(PF3)3 intermediate if the substrate temperature is sufficiently high [50]). To date, the most popular precursor class for FEBID is homometallic metal carbonyls of homo- and heteroleptic nature with sufficient

Gas-assisted silver deposition with a focused electron beam

• Luisa Berger,
• Katarzyna Madajska,
• Iwona B. Szymanska,
• Katja Höflich,
• Mikhail N. Polyakov,
• Jakub Jurczyk,
• Carlos Guerra-Nuñez and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 224–232, doi:10.3762/bjnano.9.24

• shown that fragments of the intact molecule in the gas phase are detected in significant amounts up to 220 °C [18] so that decomposition at 160 °C seems to be unlikely, there might be a thermal deposition mechanism for this substrate temperature. Further investigations have to show how this competing

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• dedicated to the study of Si-doped GaN NWs and NT-like structure synthesis on Si(111) substrates by means of plasma-assisted molecular beam epitaxy in N-rich conditions. We investigated the impact of the silicon oxide layer, substrate temperature and gallium flux on the NW formation. To the best of our

• was observed between samples grown for about 30 h but subject to different temperature annealing procedures, though both the elongation rate and surface density were affected, as mentioned previously. Another aim of our study was to analyze the influence of the substrate temperature on the growth

• process. We varied the substrate temperature over a narrow range of 790–820 °C. It turned out that the NW elongation rate and surface density critically depend on the temperature. The optimum temperature value corresponding to the highest observed NW elongation rate was 800 °C. According to the

Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation

• Alberto Curcella,
• Romain Bernard,
• Yves Borensztein,
• Silvia Pandolfi and
• Geoffroy Prévot

Beilstein J. Nanotechnol. 2018, 9, 48–56, doi:10.3762/bjnano.9.7

• easy synthesis, Si/Ag(111) monolayers have been intensively studied [3][4][5][6]. It has been shown that several monolayer structures can be formed, depending on the substrate temperature [7]. All of them probably correspond to a buckled honeycomb structure for Si atoms. For example, a buckling of 0.77

• atom electron spectroscopy [35] and deuterium exposure of the film [36], whereas opposite conclusions were obtained from STM observations after applying a bias pulse at low temperature [33]. Very recently, the existence of two different growth modes on Ag(111), depending on the substrate temperature

Au nanostructure fabrication by pulsed laser deposition in open air: Influence of the deposition geometry

• Rumen G. Nikov,
• Anna Og. Dikovska,
• Nikolay N. Nedyalkov,
• Georgi V. Avdeev and
• Petar A. Atanasov

Beilstein J. Nanotechnol. 2017, 8, 2438–2445, doi:10.3762/bjnano.8.242

• using the same processing conditions but performed in vacuum led to the deposition of a flat film. Furthermore, the room substrate temperature does not support an efficient atom migration. All these factors suggest that the nanoparticles, as well as the nanoparticle aggregates, are predominantly formed

Ester formation at the liquid–solid interface

• Nguyen T. N. Ha,
• Thiruvancheril G. Gopakumar,
• Nguyen D. C. Yen,
• Carola Mende,
• Lars Smykalla,
• Maik Schlesinger,
• Roy Buschbeck,
• Tobias Rüffer,
• Heinrich Lang,
• Michael Mehring and
• Michael Hietschold

Beilstein J. Nanotechnol. 2017, 8, 2139–2150, doi:10.3762/bjnano.8.213

• same ester patterns are observed also for two alternative preparation methods: prolonged magnetic stirring for about 15 h or increasing the substrate temperature to 60–80 °C during deposition. As an example, the STM image of TMA–monoundecyl ester type-I obtained from the TMA–undecanol solution stirred

• for 15 h is shown in Figure 4. The ester pattern observed after increasing the substrate temperature during deposition (subsequent STM was carried out at room temperature) is shown in Figure 5. The unit cell parameter A = 3.0 ± 0.1 nm and the angle of the undecanol alkyl chain with respect to A, β

• isolated molecules neglecting the adsorbate–substrate interaction as well as various effects of the tip and the environment on the imaging. To further prove that the patterns observed at high sonication/stirring time and high substrate temperature really show deposited monoester molecules, we have studied

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• research for alternatives [29][30][31][32]. Mg is another dopant impurity [25][33][34][35][36][37][38] used for p-type doping with a low diffusion coefficient, which has a solid solubility of 1 × 1019 cm−3 and a low sticking coefficient (10−2–10−5) in the substrate temperature range of 725–850 K [34]. The

Magnetic properties of optimized cobalt nanospheres grown by focused electron beam induced deposition (FEBID) on cantilever tips

• Soraya Sangiao,
• César Magén,
• Darius Mofakhami,
• Grégoire de Loubens and
• José María De Teresa

Beilstein J. Nanotechnol. 2017, 8, 2106–2115, doi:10.3762/bjnano.8.210

• substrate temperature [35][36] have been found to be relevant parameters to tune the metal content in magnetic deposits. However, some constraints exist, which impede to grow arbitrary shapes with arbitrary metal content. In general, the difficulties increase when the goal is to grow very small structures

Coexistence of strongly buckled germanene phases on Al(111)

• Weimin Wang and
• Roger I. G. Uhrberg

Beilstein J. Nanotechnol. 2017, 8, 1946–1951, doi:10.3762/bjnano.8.195

• energy electron diffraction and core-level photoelectron spectroscopy. Experimental results show that a germanium layer can be formed at a relatively high substrate temperature showing either (3×3) or (√7×√7)R±19.1° reconstructions. First-principles calculations based on density functional theory suggest

• temperatures significantly higher than 87 °C. After deposition at a substrate temperature of ≈200 °C, sharp LEED patterns were observed for two phases, i.e., a 3×3 phase and a new √7×√7 superstructure. These phases, formed at higher temperature, deviate from the low temperature phases in the sense that the STM

• once truly single-phase samples can be achieved. Conclusion We have successfully grown monolayer Ge on Al(111) at a substrate temperature of about 200 °C, which is much higher than the “magic” temperature range mentioned in the literature. Our LEED and STM results confirm a coexistence of two well

Process-specific mechanisms of vertically oriented graphene growth in plasmas

• Subrata Ghosh,
• Shyamal R. Polaki,
• Niranjan Kumar,
• Sankarakumar Amirthapandian,
• Mohamed Kamruddin and
• Kostya (Ken) Ostrikov

Beilstein J. Nanotechnol. 2017, 8, 1658–1670, doi:10.3762/bjnano.8.166

• the temperature-dependent growth rates where the activation energy is found to be as low as 0.57 eV. It is shown that the growth rate and the structural quality of the films could be enhanced by (a) increasing the substrate temperature, (b) decreasing the distance between the microwave plasma source

• same sp3 content in the film. The effects of the substrate temperature and the electric field in vertical alignment of the graphene sheets are reported. These findings help to develop and optimize the process conditions to produce VGNs tailored for applications including sensing, field emission

• , the substrate temperature defines the energy and mobility of the plasma gases/species. It has been reported that the vertical structure cannot be grown from gaseous precursors at substrate temperatures lower than 630 °C [51]. Cho et al. [9] have shown that a variation of the plasma discharge power and

Surface functionalization of 3D-printed plastics via initiated chemical vapor deposition

• Christine Cheng and
• Malancha Gupta

Beilstein J. Nanotechnol. 2017, 8, 1629–1636, doi:10.3762/bjnano.8.162

• the structures during processing. In this study, processing parameters such as the substrate temperature and the filament temperature were systematically varied to understand how these parameters affect the uniformity of the coatings along the 3D-printed objects. The 3D-printed objects were coated

• to substrates on a cooled stage where polymerization occurs. The molecular weight increases with decreasing substrate temperature and typical molecular weights are in the range of 50,000 to 200,000 [23][24]. The iCVD process is solventless and therefore effects of surface tension are avoided

• , allowing for conformal coating on complex surfaces such as mictrotrenches [25] and nanopore membranes [26]. Since the rate of reaction in iCVD is limited by adsorption of monomer to the substrate, a lower substrate temperature results in a faster polymerization rate [24]. Thus, the thermally insulating

Charge transport in organic nanocrystal diodes based on rolled-up robust nanomembrane contacts

• Vineeth Kumar Bandari,
• Lakshmi Varadharajan,
• Longqian Xu,
• Abdur Rehman Jalil,
• Mirunalini Devarajulu,
• Pablo F. Siles,
• Feng Zhu and
• Oliver G. Schmidt

Beilstein J. Nanotechnol. 2017, 8, 1277–1282, doi:10.3762/bjnano.8.129

• usually realized by thermal evaporation in vacuum. The molecules have van der Waals interaction with an inert substrate which makes them weakly bonded to the substrate [11]. As a result, by controlling the molecules deposition parameters, such as deposition rate and the substrate temperature, it is

Oxidative chemical vapor deposition of polyaniline thin films

• Yuriy Y. Smolin,
• Masoud Soroush and
• Kenneth K. S. Lau

Beilstein J. Nanotechnol. 2017, 8, 1266–1276, doi:10.3762/bjnano.8.128

• oxidant flowrate series of runs, two additional conditions were carried out at a lower substrate temperature of 25 °C compared to their high temperature counterparts (LT series: LT-BC, LT-F1). The decrease in the temperature may promote surface adsorption over reaction that can impact polymer growth

• oCVD PANI process is not sensitive to reactant concentrations under these deposition conditions, and that the monomer and oxidant are most likely in excess to have any influence on deposition behavior. For the runs in which substrate temperature (Ts) was varied, their FTIR spectra can be compared, as

• incorporation [54][55]. Interestingly, the LT-BC spectrum (25 °C, 0.8 sccm oxidant) is very similar to that of F2 (90 °C, 0.15 sccm oxidant), which is believed to have a lower oxidation state and an appreciable amount of oligomers. This suggests that a low substrate temperature has an equivalent effect to

Nanotopographical control of surfaces using chemical vapor deposition processes

• Meike Koenig and
• Joerg Lahann

Beilstein J. Nanotechnol. 2017, 8, 1250–1256, doi:10.3762/bjnano.8.126

• as a porogen if unconventional iCVD processing conditions are employed (Figure 4) [33][34][35][36]. Increasing the partial pressure of the monomer above its saturation pressure and decreasing the substrate temperature below the freezing point of the monomer results simultaneously in the deposition of

• , monomer partial pressure and substrate temperature. The three-dimensional growth of pillared microstructures was found at low substrate temperatures, while at increased substrate temperatures, web-like growth occurred. The membrane formation could be spatially controlled by patterning of the surface

• via introduction of a porogen during the deposition process: the images show the extent of the deposition of solid monomer, which occurs simultaneously with polymerization. Thereby, the resulting morphology can be varied by the monomer flow rates or the substrate temperature. Reprinted with permission

Growth, structure and stability of sputter-deposited MoS₂ thin films

• Reinhard Kaindl,
• Bernhard C. Bayer,
• Roland Resel,
• Thomas Müller,
• Viera Skakalova,
• Gerlinde Habler,
• Rainer Abart,
• Alexey S. Cherevan,
• Dominik Eder,
• Maxime Blatter,
• Fabian Fischer,
• Jannik C. Meyer,
• Dmitry K. Polyushkin and
• Wolfgang Waldhauser

Beilstein J. Nanotechnol. 2017, 8, 1115–1126, doi:10.3762/bjnano.8.113

• substrate temperature. The applied sputter deposition process employs a MoS2 target sputtered by argon ions. Ar (atomic number 18) preferably sputters light sulfur atoms (atomic number 16) from the target. Heavier molybdenum atoms (atomic number 42) are harder to sputter. Thus sputter and back-sputter

• sputtering target. The substrate temperature was held at RT or 400 °C and monitored with an electrically insulated K-type thermocouple (Jumo, Fulda, Germany) installed at the backside of the heated substrate holder. After pumping to medium vacuum conditions (2 × 10−3 Pa), an ion plasma pre-treatment with a

Triptycene-terminated thiolate and selenolate monolayers on Au(111)

• Jinxuan Liu,
• Martin Kind,
• Björn Schüpbach,
• Daniel Käfer,
• Stefanie Winkler,
• Wenhua Zhang,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2017, 8, 892–905, doi:10.3762/bjnano.8.91

• other contaminations from the ambient. Subsequently, a 140 nm gold layer (99.995%, Chempur) was deposited by thermal evaporation at a substrate temperature of 280 °C and a pressure of ≈10−7 mbar using the above-mentioned vaporisator. The substrate was cooled down to room temperature in the evaporation

Vapor deposition routes to conformal polymer thin films

• Priya Moni,
• Ahmed Al-Obeidi and
• Karen K. Gleason

Beilstein J. Nanotechnol. 2017, 8, 723–735, doi:10.3762/bjnano.8.76

• deposition. Another approach to reduce the sticking coefficient is to increase the substrate temperature to hinder monomer adsorption. The functional dependence of temperature on Γ is seen in Equation 3 and plotted in Figure 3a. While a reduction both in chamber pressure or increase in substrate temperature

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

• Massimiliano Lucci,
• Ivano Ottaviani,
• Matteo Cirillo,
• Fabio De Matteis,
• Roberto Francini,
• Vittorio Merlo and
• Ivan Davoli

Beilstein J. Nanotechnol. 2017, 8, 539–546, doi:10.3762/bjnano.8.58

• this work were grown on Si(111) substrates covered by 1 μm of amorphous, artificially grown oxide. Following common recipes reported in literature the target–substrate distance is about 10 cm and the substrate temperature, measured by a thermocouple, is kept below 50 °C during the NbN film growth

Impact of air exposure and annealing on the chemical and electronic properties of the surface of SnO₂ nanolayers deposited by rheotaxial growth and vacuum oxidation

• Monika Kwoka and
• Maciej Krzywiecki

Beilstein J. Nanotechnol. 2017, 8, 514–521, doi:10.3762/bjnano.8.55

• 50% and a constant temperature of T = 21 °C for 72 h, which ensured the saturation of the exposure effect. Then the samples were re-examined by XPS. At the final step the air-exposed samples were annealed (outgassing) at 265 °C (the standard substrate temperature for deposition of the RGVO SnO2

Phosphorus-doped silicon nanorod anodes for high power lithium-ion batteries

• Chao Yan,
• Qianru Liu,
• Jianzhi Gao,
• Zhibo Yang and
• Deyan He

Beilstein J. Nanotechnol. 2017, 8, 222–228, doi:10.3762/bjnano.8.24

• deposition (PECVD) device. Typically, the source gas for PECVD was silane (10%, diluted with hydrogen) with a flow rate of 50 sccm mixed with phosphine (5%, diluted with hydrogen) with a flow rate of 5 sccm. The deposition pressure and substrate temperature were 80 Pa and 150 °C, respectively. The structural

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• electrode. The latter is more preferable because of the higher accuracy of regulation. The influence of ion current value on the island growth was studied under the following conditions. The substrate temperature during indium arsenide crystallization was 500 °C. The ion energy was kept at 150 eV. The ion

• results of the previous two sections, the following conditions were used for studying the influence of the beam energy. The substrate temperature was 500 °C, and a beam current of 120 µA was chosen. The experiments were performed at various energies of the argon ions between 120 eV (lower technical limit

• SnTe [39]. The coefficient of volume diffusion of the impurity components does not change when the gallium arsenide flux and the substrate temperature are kept constant. The decrease of RGaAs/SnTe results in a surplus of Te on the growing layer surface. The rate of Te volume diffusion becomes smaller

Morphology of SiO₂ films as a key factor in alignment of liquid crystals with negative dielectric anisotropy

• Volodymyr Tkachenko,
• Antigone Marino,
• Eva Otón,
• Noureddine Bennis and
• Josè Manuel Otón

Beilstein J. Nanotechnol. 2016, 7, 1743–1748, doi:10.3762/bjnano.7.167

• properties on deposition conditions (e.g., deposition technique, gas composition and pressure in a chamber, deposition rate, substrate temperature, impurities) [19]. In this work, we investigate the morphology of obliquely deposited SiO2 films and its effect on alignment of LCs with negative Δε. We kept the

• (Glasstone) using a Vacudel 300 Telstar. The pressure in the chamber and substrate temperature were 5.3·10−4 Pa and 330 K, respectively. Granules of pure SiO2 (99.99%) were used as a source of evaporated material. The distance between the source and substrate was 75 cm to minimize angular spread of

Sb₂S₃ grown by ultrasonic spray pyrolysis and its application in a hybrid solar cell

• Erki Kärber,
• Atanas Katerski,
• Ilona Oja Acik,
• Arvo Mere,
• Valdek Mikli and
• Malle Krunks

Beilstein J. Nanotechnol. 2016, 7, 1662–1673, doi:10.3762/bjnano.7.158

• inhomogeneous coverage – and is thus undesired. Conversely, the abundance of sulfur in the precursor solution, such as 1:6 or 1:9, suppresses the formation of oxide during the growth of the Sb2S3 film at a substrate temperature of 250 °C in the CSP process in air. We reported the first results on the use of

• Baden-Württemberg (ZSW). The TiO2 layer was deposited by ultrasonic CSP onto the ITO using a spray solution of titanium(IV) isopropoxide precursor (0.1 mol·L−1) and acetylacetonate (both solutions from Merck Schudart OHG) at a molar ratio of 1:4 dissolved in ethanol [67][68], using a substrate

• temperature of 340 °C, followed by annealing at 450 °C for 30 min in air to assure the formation of the anatase phase. The thickness of the TiO2 layer remained between 80 and 100 nm as estimated from scanning electron microscopy (SEM) images. For growing Sb2S3, the precursor solution was prepared inside a