Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

• Filippo Giannazzo,
• Gabriele Fisichella,
• Aurora Piazza,
• Salvatore Di Franco,
• Giuseppe Greco,
• Simonpietro Agnello and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28

• 373 K, which was explained in terms of electron trapping at MoS2/SiO2 interface states. Keywords: contact resistance; mobility; MoS2; temperature dependence; threshold voltage; Introduction Transition metal dichalcogenides (TMDs) are compound materials formed by the Van der Waals stacking of MX2