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Search for "Ga" in Full Text gives 152 result(s) in Beilstein Journal of Nanotechnology.

Correlative electrochemical strain and scanning electron microscopy for local characterization of the solid state electrolyte Li1.3Al0.3Ti1.7(PO4)3

  • Nino Schön,
  • Deniz Cihan Gunduz,
  • Shicheng Yu,
  • Hermann Tempel,
  • Roland Schierholz and
  • Florian Hausen

Beilstein J. Nanotechnol. 2018, 9, 1564–1572, doi:10.3762/bjnano.9.148

Graphical Abstract
  • in Figure 4b. AFM topography as well as ESM amplitude signal is shown in Figure 4c,d, respectively. In comparison with hand polished samples (see Figure 2b,d) a smoother surface finish was obtained. Nevertheless, the Ga-ion beam produced some trenches due to the curtaining effect. The hand-polished
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Published 28 May 2018

Disorder-induced suppression of the zero-bias conductance peak splitting in topological superconducting nanowires

  • Jun-Tong Ren,
  • Hai-Feng Lü,
  • Sha-Sha Ke,
  • Yong Guo and
  • Huai-Wu Zhang

Beilstein J. Nanotechnol. 2018, 9, 1358–1369, doi:10.3762/bjnano.9.128

Graphical Abstract
  • the bare Green’s function of the central region without coupling to the leads (tL = tR = 0), where In×n is the n × n identity matrix. Since Gr is already given and the advanced Green’s function Ga can be obtained from Gr = (Ga)†, it is now straightforward to obtain the lesser Green’s function from the
  • > = Ga −Gr holds. Finally, we define the noise Fano factor F = SL(ω = 0)/2eIL to measure the deviation from the uncorrelated Poissonian noise for which F = 1, with respect to which the shot noise can be enhanced or suppressed because the current fluctuations in the device are highly susceptible to
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Published 04 May 2018

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

  • Tarek A. Ameen,
  • Hesameddin Ilatikhameneh,
  • Archana Tankasala,
  • Yuling Hsueh,
  • James Charles,
  • Jim Fonseca,
  • Michael Povolotskyi,
  • Jun Oh Kim,
  • Sanjay Krishna,
  • Monica S. Allen,
  • Jeffery W. Allen,
  • Rajib Rahman and
  • Gerhard Klimeck

Beilstein J. Nanotechnol. 2018, 9, 1075–1084, doi:10.3762/bjnano.9.99

Graphical Abstract
  • simulated QD showing only cations (Al,Ga,In) to emphasize the randomness of the simulated alloys. The number of atoms used for the strain simulation is approximately 10 million atoms, while for band structure calculations only approximately 1.5 million atoms are used. Bond lengths and bond angle for three
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Published 04 Apr 2018

Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition

  • Silvia Vangelista,
  • Rossella Piagge,
  • Satu Ek and
  • Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

Graphical Abstract
  • distribution as in [26]. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) investigation of the compositional depth profile of the CeO2/TiN/Si and CeO2/Si structures has been performed by means of a Cs+ ion beam (energy of 0.5 keV, ion current 38.0 nA) sputtering a 200 μm × 200 μm area, and a Ga+ ion
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Published 15 Mar 2018

Electron interactions with the heteronuclear carbonyl precursor H2FeRu3(CO)13 and comparison with HFeCo3(CO)12: from fundamental gas phase and surface science studies to focused electron beam induced deposition

  • Ragesh Kumar T P,
  • Paul Weirich,
  • Lukas Hrachowina,
  • Marc Hanefeld,
  • Ragnar Bjornsson,
  • Helgi Rafn Hrodmarsson,
  • Sven Barth,
  • D. Howard Fairbrother,
  • Michael Huth and
  • Oddur Ingólfsson

Beilstein J. Nanotechnol. 2018, 9, 555–579, doi:10.3762/bjnano.9.53

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Published 14 Feb 2018

Single-step process to improve the mechanical properties of carbon nanotube yarn

  • Maria Cecilia Evora,
  • Xinyi Lu,
  • Nitilaksha Hiremath,
  • Nam-Goo Kang,
  • Kunlun Hong,
  • Roberto Uribe,
  • Gajanan Bhat and
  • Jimmy Mays

Beilstein J. Nanotechnol. 2018, 9, 545–554, doi:10.3762/bjnano.9.52

Graphical Abstract
  • Department, University of Georgia, Athens, GA 30602, USA 10.3762/bjnano.9.52 Abstract Carbon nanotube (CNT) yarns exhibit low tensile strength compared to conventional high-performance carbon fibers due to the facile sliding of CNTs past one another. Electron beam (e-beam) irradiation was employed for in a
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Published 13 Feb 2018

Ultralight super-hydrophobic carbon aerogels based on cellulose nanofibers/poly(vinyl alcohol)/graphene oxide (CNFs/PVA/GO) for highly effective oil–water separation

  • Zhaoyang Xu,
  • Huan Zhou,
  • Sicong Tan,
  • Xiangdong Jiang,
  • Weibing Wu,
  • Jiangtao Shi and
  • Peng Chen

Beilstein J. Nanotechnol. 2018, 9, 508–519, doi:10.3762/bjnano.9.49

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  • Zhejiang Lishui, China. Graphite powder (40 μm), used as the source for GO, was obtained from Qingdao Henglide Graphite Co., Ltd. Poly(vinyl alcohol) (PVA, Mw ≈ 95,000 g/mol), glutaraldehyde (GA, crosslinker, 25 wt % in H2O), potassium hydroxide (KOH), Sudan III, acetic acid (CH3COOH), hydrogen peroxide
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Published 12 Feb 2018

Al2O3/TiO2 inverse opals from electrosprayed self-assembled templates

  • Arnau Coll,
  • Sandra Bermejo,
  • David Hernández and
  • Luís Castañer

Beilstein J. Nanotechnol. 2018, 9, 216–223, doi:10.3762/bjnano.9.23

Graphical Abstract
  • (Network of Excellence ‘Nanophotonics for Energy’ GA 248855). SEM and optical measurements were performed at CRNE. The authors thank Dr. Trifon Trifonov and Dr. Álvaro Blanco for their helpful discussions.
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Published 19 Jan 2018

Bombyx mori silk/titania/gold hybrid materials for photocatalytic water splitting: combining renewable raw materials with clean fuels

  • Stefanie Krüger,
  • Michael Schwarze,
  • Otto Baumann,
  • Christina Günter,
  • Michael Bruns,
  • Christian Kübel,
  • Dorothée Vinga Szabó,
  • Rafael Meinusch,
  • Verónica de Zea Bermudez and
  • Andreas Taubert

Beilstein J. Nanotechnol. 2018, 9, 187–204, doi:10.3762/bjnano.9.21

Graphical Abstract
  • ), calcium chloride dihydrate (CaCl2·2H2O, ≥99%, Carl Roth), ethanol (EtOH; 99%, VWR), ethyl acetoacetate (EtAcAc, 99%, Alfa Aesar), glutaraldehyde solution (GA, 25% in H2O, Sigma-Aldrich), hydrogen tetrachloridoaurate(III) trihydrate (HAuCl4·3H2O, 99.99%, Alfa Aesar), poly(ethylene oxide) (PEO780, nominal
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Published 17 Jan 2018

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

  • Alexey D. Bolshakov,
  • Alexey M. Mozharov,
  • Georgiy A. Sapunov,
  • Igor V. Shtrom,
  • Nickolay V. Sibirev,
  • Vladimir V. Fedorov,
  • Evgeniy V. Ubyivovk,
  • Maria Tchernycheva,
  • George E. Cirlin and
  • Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

Graphical Abstract
  • ]. It has been previously demonstrated that solid Ga(In, Al)N alloys can be used in the production of light-emitting and light-absorbing devices covering wide spectral range [5][6]. One of the main NW features is their small footprint and large surface-to-volume ratio, which allows the growth of these
  • absence of a doping flux [16]. Compared to other widely studied III–V NWs (e.g., Al(Ga, In)As), which can be synthesized by MBE on Si substrates via a vapor–liquid–solid (VLS) mechanism that uses catalyst droplets, GaN NWs grow according to the self-induced mechanism in the absence of catalyst [17][18
  • reconstruction should be on the NW top polar facet [20] enabling good bonding of Ga atoms, while on nonpolar sidewalls, the adsorbed atoms are weakly bonded and diffuse to the top facet or can be desorbed. Self-induced formation of NWs has been discovered on Al2O3 [21] and was successfully reproduced on other
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Published 15 Jan 2018

Involvement of two uptake mechanisms of gold and iron oxide nanoparticles in a co-exposure scenario using mouse macrophages

  • Dimitri Vanhecke,
  • Dagmar A. Kuhn,
  • Dorleta Jimenez de Aberasturi,
  • Sandor Balog,
  • Ana Milosevic,
  • Dominic Urban,
  • Diana Peckys,
  • Niels de Jonge,
  • Wolfgang J. Parak,
  • Alke Petri-Fink and
  • Barbara Rothen-Rutishauser

Beilstein J. Nanotechnol. 2017, 8, 2396–2409, doi:10.3762/bjnano.8.239

Graphical Abstract
  • , ethanol, and deionized water, phosphate-buffered saline (PBS) at a 10× solution, electron microscopy grade glutaraldehyde (GA) 25% solution, D-saccharose, glycine, biotin-free and molecular biology grade albumin fraction V (BSA), and sodium cacodylate trihydrate were obtained from Carl Roth GmbH + Co. KG
  • rinsing three times with PBS and once with 0.1 M cacodylate buffer (CB) and 0.1 M saccharose (pH 7.4), the cells were fixed with 2% GA in CB for 10 min at RT. Subsequently, the cells were rinsed once with CB, and three times with PBS, followed by incubation in 0.1 M glycine in PBS (GLY-PBS, pH 7.4) for 2
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Published 14 Nov 2017

Substrate and Mg doping effects in GaAs nanowires

  • Perumal Kannappan,
  • Nabiha Ben Sedrine,
  • Jennifer P. Teixeira,
  • Maria R. Soares,
  • Bruno P. Falcão,
  • Maria R. Correia,
  • Nestor Cifuentes,
  • Emilson R. Viana,
  • Marcus V. B. Moreira,
  • Geraldo M. Ribeiro,
  • Alfredo G. de Oliveira,
  • Juan C. González and
  • Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

Graphical Abstract
  • cells (1.519 eV for GaAs bulk at low temperature). Additionally, Ga is more abundant and less toxic than other elements (e.g., In and Cd, respectively) involved in other compounds commonly used in thin film-based solar cells like Cu(In,Ga)Se2 and CdTe. Bulk GaAs exhibits the zincblende (ZB) crystal
  • growth mechanism by drop-coating the substrate with Au colloidal nanoparticles with average diameter of 5.0 ± 0.5 nm. The growth was performed at 615 °C for 90 min, under an As4 beam equivalent pressure (BEP) of 3.8 × 10−5 torr and Ga BEP of 7.2 × 10−7 torr. The Mg doping of the nanowires was achieved by
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Published 11 Oct 2017

Fluorination of vertically aligned carbon nanotubes: from CF4 plasma chemistry to surface functionalization

  • Claudia Struzzi,
  • Mattia Scardamaglia,
  • Jean-François Colomer,
  • Alberto Verdini,
  • Luca Floreano,
  • Rony Snyders and
  • Carla Bittencourt

Beilstein J. Nanotechnol. 2017, 8, 1723–1733, doi:10.3762/bjnano.8.173

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  • the 7th European Community Framework Programme “NanoCF” (grant agreement number: PIRSES-GA-2013-612577). The project FITTED-FNRS (J 0230.17) is also acknowledged.
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Published 21 Aug 2017

Group-13 and group-15 doping of germanane

  • Nicholas D. Cultrara,
  • Maxx Q. Arguilla,
  • Shishi Jiang,
  • Chuanchuan Sun,
  • Michael R. Scudder,
  • R. Dominic Ross and
  • Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

Graphical Abstract
  • -terminated graphane analogue of germanium has generated interest as a potential 2D electronic material. However, the incorporation and retention of extrinsic dopant atoms in the lattice, to tune the electronic properties, remains a significant challenge. Here, we show that the group-13 element Ga and the
  • group-15 element As, can be successfully doped into a precursor CaGe2 phase, and remain intact in the lattice after the topotactic deintercalation, using HCl, to form GeH. After deintercalation, a maximum of 1.1% As and 2.3% Ga can be substituted into the germanium lattice. Electronic transport
  • properties of single flakes show that incorporation of dopants leads to a reduction of resistance of more than three orders of magnitude in H2O-containing atmosphere after As doping. After doping with Ga, the reduction is more than six orders of magnitude, but with significant hysteretic behavior, indicative
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Published 09 Aug 2017

3D continuum phonon model for group-IV 2D materials

  • Morten Willatzen,
  • Lok C. Lew Yan Voon,
  • Appala Naidu Gandi and
  • Udo Schwingenschlögl

Beilstein J. Nanotechnol. 2017, 8, 1345–1356, doi:10.3762/bjnano.8.136

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  • Morten Willatzen Lok C. Lew Yan Voon Appala Naidu Gandi Udo Schwingenschlogl Department of Photonics Engineering, Technical University of Denmark, Kgs. Lyngby, 2800, Denmark College of Science and Mathematics, The University of West Georgia, 1601 Maple St, Carrollton, GA 30117. USA PSE Division
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Published 30 Jun 2017

CVD transfer-free graphene for sensing applications

  • Chiara Schiattarella,
  • Sten Vollebregt,
  • Tiziana Polichetti,
  • Brigida Alfano,
  • Ettore Massera,
  • Maria Lucia Miglietta,
  • Girolamo Di Francia and
  • Pasqualina Maria Sarro

Beilstein J. Nanotechnol. 2017, 8, 1015–1022, doi:10.3762/bjnano.8.102

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  • extent. Figure 3 displays the dynamic response of the conductance of the devices towards 1 ppm of NO2. As can be observed, the base conductance values are comparable (GA ≈ GB ≈ 22 µS). During exposure, both chemiresistors exhibit an identical percentage variation of the conductance without reaching a
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Published 08 May 2017

Functional dependence of resonant harmonics on nanomechanical parameters in dynamic mode atomic force microscopy

  • Federico Gramazio,
  • Matteo Lorenzoni,
  • Francesc Pérez-Murano,
  • Enrique Rull Trinidad,
  • Urs Staufer and
  • Jordi Fraxedas

Beilstein J. Nanotechnol. 2017, 8, 883–891, doi:10.3762/bjnano.8.90

Graphical Abstract
  • also follow quite closely Equation 4, with g1 = −63.092 nN·nm−2, g2 = 42.371 nm−1 and g3 = −42.223 nN1/2·nm−3/2. Thus, the simulations provide a functional dependence of A6 on the relevant R, E, A1 and kc parameters, which can be stated as: where Gr, Ge, Ga and Gk represent the decoupled gun-shaped
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Published 19 Apr 2017

3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity

  • Brett B. Lewis,
  • Robert Winkler,
  • Xiahan Sang,
  • Pushpa R. Pudasaini,
  • Michael G. Stanford,
  • Harald Plank,
  • Raymond R. Unocic,
  • Jason D. Fowlkes and
  • Philip D. Rack

Beilstein J. Nanotechnol. 2017, 8, 801–812, doi:10.3762/bjnano.8.83

Graphical Abstract
  • of 3D growth have been demonstrated [35][36][37][38] beyond simple 1D nanowires, controlled growth of complex geometries using EBID has only recently been achieved based on a combined simulation and computer aided design approach [11]. This approach has also been used with Ga+ ion beam induced
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Published 07 Apr 2017

Recombinant DNA technology and click chemistry: a powerful combination for generating a hybrid elastin-like-statherin hydrogel to control calcium phosphate mineralization

  • Mohamed Hamed Misbah,
  • Mercedes Santos,
  • Luis Quintanilla,
  • Christina Günter,
  • Matilde Alonso,
  • Andreas Taubert and
  • José Carlos Rodríguez-Cabello

Beilstein J. Nanotechnol. 2017, 8, 772–783, doi:10.3762/bjnano.8.80

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  • -2011-278557, PITN-GA-2012-317306 and MSCA-ITN-2014-642687), the MINECO of the Spanish Government (MAT2013-42473-R and MAT2013-41723-R) and the Junta de Castilla y León (VA244U13, VA313U14 and GRS/516/A/10), Spain. The Deutsche Forschungsgemeinschaft (DFG, TA571/11-1), and the University of Potsdam are
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Published 04 Apr 2017

Modeling adsorption of brominated, chlorinated and mixed bromo/chloro-dibenzo-p-dioxins on C60 fullerene using Nano-QSPR

  • Piotr Urbaszek,
  • Agnieszka Gajewicz,
  • Celina Sikorska,
  • Maciej Haranczyk and
  • Tomasz Puzyn

Beilstein J. Nanotechnol. 2017, 8, 752–761, doi:10.3762/bjnano.8.78

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  • adsorption energy values (ΔEads) for 32 Br/Cl dibenzo-p-dioxin congeners adsorbed on a C60 fullerene surface and carefully selected structural descriptors, we developed a Nano-QSPR model, employing a hybrid genetic algorithm, partial least squares linear regression (GA-PLS), as the modeling method. The
  • for Economic Co-operation and Development (OECD) QSAR validation recommendations [27] and fulfills all the validation criteria. The presented model has a well-defined endpoint (ΔEads - adsorption energy of a C60@PXDD complex) and well-known algorithms (GA-PLS). According to OECD guidelines, it is
  • on the cross-validation results (the lowest value of the root mean square error of cross validation, RMSECV). Four latent vectors (LVs), as a set of 4, were selected by the GA descriptors: #H, TE, D_x and D_y together explained 100% of the variance (58.08% + 40.42% + 1.30% + 0.20%) of the X-block and
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Published 31 Mar 2017

Synthesis of graphene–transition metal oxide hybrid nanoparticles and their application in various fields

  • Arpita Jana,
  • Elke Scheer and
  • Sebastian Polarz

Beilstein J. Nanotechnol. 2017, 8, 688–714, doi:10.3762/bjnano.8.74

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  • superior electrical performance because the porous nature of the hybrid accommodates the volume change [146]. Wu et al. have use 3D N-doped graphene aerogel (GA) supported Fe3O4 NPs (Fe3O4/N-GA) as efficient cathode catalysts for ORR [147]. This Fe3O4/N-GA material shows excellent electrocatalytic activity
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Review
Published 24 Mar 2017

Ion beam profiling from the interaction with a freestanding 2D layer

  • Ivan Shorubalko,
  • Kyoungjun Choi,
  • Michael Stiefel and
  • Hyung Gyu Park

Beilstein J. Nanotechnol. 2017, 8, 682–687, doi:10.3762/bjnano.8.73

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  • strategy to measure FIB profiles is to exploit the milling effect of a bulk substrate by ion beams with a controlled beam dose. This method was actually used to estimate the focus spot size of one of the first Ga-FIBs [8]. In order to extract the ion beam profiles from such experiments more precisely, one
  • are exposed to ion beams, and in return this dependency reflects information of the ion beam profile. We determine a Ga-FIB point spread function and verify its Gaussian profile for different beam current values. The volume under the Gaussian profile is used to extract the graphene sputtering yield in
  • , freestanding graphene membranes were exposed to a Ga+ focused ion beam. The smallest beam aperture gives a beam current value of 1.5 pA. A suspended graphene layer is then exposed in a single-pixel exposure mode. Figure 1a shows a STEM bright field (BF) image of seven pores milled into graphene with different
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Published 23 Mar 2017

Modeling of the growth of GaAs–AlGaAs core–shell nanowires

  • Qian Zhang,
  • Peter W. Voorhees and
  • Stephen H. Davis

Beilstein J. Nanotechnol. 2017, 8, 506–513, doi:10.3762/bjnano.8.54

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  • that of Ga, Al-rich stripes are predicted to form along the {112} facets when the difference of the mobilities of Al and Ga atoms is sufficiently large on {112} facets. As the size of the shell increases, deposition becomes more important. The Al-poor dots are obtained at the apices of {112} facets, if
  • nanowires? The other issue is the mechanism responsible for the segregation of Al atoms in the shells. More specifically, under certain deposition conditions, Al atoms move slower than Ga atoms along the {110} facets [6]. If the atoms move from {110} to {112} facets, then the Al atoms should be left behind
  • on the {110} facets rather than accumulate in the directions. Thus, the question is how the Al-rich stripes could form along {112} facets when the atoms move from {110} facets to {112} facets and the mobility of Al is lower than that of Ga on {110} facets [6]. Following this question is that of how
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Letter
Published 24 Feb 2017

Fiber optic sensors based on hybrid phenyl-silica xerogel films to detect n-hexane: determination of the isosteric enthalpy of adsorption

  • Jesús C. Echeverría,
  • Ignacio Calleja,
  • Paula Moriones and
  • Julián J. Garrido

Beilstein J. Nanotechnol. 2017, 8, 475–484, doi:10.3762/bjnano.8.51

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  • , Norcross, GA, USA). 100 mg of each sample were accurately weighed out in an elongated Pyrex glass tube. Before the adsorption analysis, the samples were degassed for at least 12 h at 423 K at the degassing port of the adsorption apparatus, with a residual vacuum of 0.70 Pa. The specific surface area of the
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Published 21 Feb 2017

Tandem polymer solar cells: simulation and optimization through a multiscale scheme

  • Fanan Wei,
  • Ligang Yao,
  • Fei Lan,
  • Guangyong Li and
  • Lianqing Liu

Beilstein J. Nanotechnol. 2017, 8, 123–133, doi:10.3762/bjnano.8.13

Graphical Abstract
  • algorithm (GA), a global optimal PCE value was found and the corresponding device parameters were obtained. In order to prove the viability of our proposed simulation approach, two different configurations of the tandem devices, as shown in Figure 1b, were both tested and compared with each other
  • accurate optimization results are required for tandem polymer solar cells. For the purpose of relieving computational load and optimizing tandem device structures with all the structure parameters considered, we employed two searching algorithms: simplex searching [30] and GA [31]. In simplex searching
  • according to the schematic and flow chart (Figure S3 and S4, in Supporting Information File 1). On the other hand, for GA searching, six samples (six points) with four traits (the four variables) were prepared. During each iteration, the best two samples were selected as the parent ones. The child samples
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Published 12 Jan 2017
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