Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• -oxide-semiconductor (CMOS) technology and thus have yet to be integrated into a cost-efficient Si-based technology. Multiple methods have been proposed and optimized for Si NC fabrication, including plasma-enhanced chemical vapor deposition (PECVD) [4][10], magnetron sputtering [11][12], laser-induced

Near-infrared light harvesting of upconverting NaYF₄:Yb³⁺/Er³⁺-based amorphous silicon solar cells investigated by an optical filter

• Daiming Liu,
• Qingkang Wang and
• Qing Wang

Beilstein J. Nanotechnol. 2018, 9, 2788–2793, doi:10.3762/bjnano.9.260

• and ethanol for several times, and dried at 70 °C. The a-Si:H solar cell with an intrinsic p–i–n configuration was deposited on a 3 mm glass substrate by plasma-enhanced chemical vapor deposition. The front and back contact electrodes were deposited as AZO transparent conductive films. Then, the

Oriented zinc oxide nanorods: A novel saturable absorber for lasers in the near-infrared

• Pavel Loiko,
• Tanujjal Bora,
• Josep Maria Serres,
• Haohai Yu,
• Magdalena Aguiló,
• Francesc Díaz,
• Uwe Griebner,
• Valentin Petrov,
• Xavier Mateos and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2018, 9, 2730–2740, doi:10.3762/bjnano.9.255

• epitaxy, metal-organic chemical vapor deposition, pulsed laser deposition), or by wet-chemical processes (e.g., the hydrothermal method, electrochemical deposition) [4]. The hydrothermal growth of ZnO NRs is a relatively simple, versatile and low temperature process [5]. ZnO NRs are used in gas sensors

Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

• Andreea Costas,
• Camelia Florica,
• Elena Matei,
• Maria Eugenia Toimil-Molares,
• Ionel Stavarache,
• Andrei Kuncser,
• Victor Kuncser and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

• -resistance and magneto-thermopower measurements on single Co–Ni alloy nanowires have been reported [10]. Several methods have been reported for the controlled fabrication of magnetic nanowires including lithographical techniques, chemical vapor deposition and hydrothermal growth [11][12][13]. The main

Metal–dielectric hybrid nanoantennas for efficient frequency conversion at the anapole mode

• Valerio F. Gili,
• Lavinia Ghirardini,
• Davide Rocco,
• Giuseppe Marino,
• Ivan Favero,
• Iännis Roland,
• Giovanni Pellegrini,
• Lamberto Duò,
• Marco Finazzi,
• Luca Carletti,
• Andrea Locatelli,
• Aristide Lemaître,
• Dragomir Neshev,
• Costantino De Angelis,
• Giuseppe Leo and
• Michele Celebrano

Beilstein J. Nanotechnol. 2018, 9, 2306–2314, doi:10.3762/bjnano.9.215

• SiOx are deposited on the surface via plasma-enhanced chemical vapor deposition (PECVD) to later improve the adhesion of the negative-tone HSQ resist on the III–V layer. A first positive-tone lithography step with PMMA resist is performed to realize the alignment structures, followed by electron beam

Metal-free catalysis based on nitrogen-doped carbon nanomaterials: a photoelectron spectroscopy point of view

• Mattia Scardamaglia and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2018, 9, 2015–2031, doi:10.3762/bjnano.9.191

• -synthetic treatments. The most common technique for doping during the synthesis is chemical vapor deposition (CVD), similar to the synthesis of the pristine material [36][69][70], albeit using nitrogen-containing precursors such as benzylamine [71], acetonitrile [72][73], phthalocyanines [74][75] or ammonia

Synthesis of carbon nanowalls from a single-source metal-organic precursor

• André Giese,
• Sebastian Schipporeit,
• Volker Buck and
• Nicolas Wöhrl

Beilstein J. Nanotechnol. 2018, 9, 1895–1905, doi:10.3762/bjnano.9.181

• vapor deposition (ICP-PECVD) is investigated. The CNWs are electrically conducting and show a large specific surface area, which is a key characteristic to make them interesting for sensors, catalytic applications or energy-storage systems. It was recently discovered that CNW films can be deposited by

• Andre Giese Sebastian Schipporeit Volker Buck Nicolas Wohrl Faculty of Physics and CENIDE, University Duisburg Essen, Carl-Benz-Straße 199, 47057 Duisburg, Germany 10.3762/bjnano.9.181 Abstract In this work, the deposition of carbon nanowalls (CNWs) by inductively coupled plasma enhanced chemical

SO₂ gas adsorption on carbon nanomaterials: a comparative study

• Deepu J. Babu,
• Divya Puthusseri,
• Frank G. Kühl,
• Sherif Okeil,
• Michael Bruns,
• Manfred Hampe and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2018, 9, 1782–1792, doi:10.3762/bjnano.9.169

• vapor deposition [56][57]. The bimetallic catalyst system for the VACNT growth was prepared by depositing a thin layer of aluminum (13–15 nm) over the substrate through thermal evaporation in a vacuum of 10−6 mbar, followed by the sputter deposition of 1.2 nm of an iron catalyst layer. The synthesis was

• with a total length of 5–20 μm. SWNTs have a diameter of ca. 1.5 nm, a length of 1–5 µm and were produced by using CVD with a purity of >95%. Vertically aligned carbon nanotubes (VACNTs) were synthesized in our lab over a Si/SiO2 (600 nm) substrate in a quartz furnace using water-assisted chemical

Toward the use of CVD-grown MoS₂ nanosheets as field-emission source

• Geetanjali Deokar,
• Nitul S. Rajput,
• Junjie Li,
• Francis Leonard Deepak,
• Wei Ou-Yang,
• Nicolas Reckinger,
• Carla Bittencourt,
• Jean-Francois Colomer and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2018, 9, 1686–1694, doi:10.3762/bjnano.9.160

• the fabricated MoS2 NSs could have a great potential as robust high-performance electron-emitter material for various applications such as microelectronics and nanoelectronics, flat-panel displays and electron-microscopy emitter tips. Keywords: chemical vapor deposition (CVD); field emission

• ][16] and the number of layers [16]. Various methods have been used to synthesize vertically aligned MoS2 NSs: liquid-phase exfoliation [17], hydrothermal synthesis [8] or chemical vapor deposition (CVD) [15][17][18]. CVD is regarded as the most promising method to synthesize high-quality MoS2 with

Light extraction efficiency enhancement of flip-chip blue light-emitting diodes by anodic aluminum oxide

• Yi-Ru Huang,
• Yao-Ching Chiu,
• Kuan-Chieh Huang,
• Shao-Ying Ting,
• Po-Jui Chiang,
• Chih-Ming Lai,
• Chun-Ping Jen,
• Snow H. Tseng and
• Hsiang-Chen Wang

Beilstein J. Nanotechnol. 2018, 9, 1602–1612, doi:10.3762/bjnano.9.152

• reflected by the surface roughness of LEDs. RCWA analysis indicated that surface plasmon waves are not involved in LEE enhancement. Experimental To produce a typical LED chip with a single-sided PSS, InGaN/GaN MQW LEDs were grown on c-plane (0001)-oriented PSSs using a metal–organic chemical vapor

• deposition apparatus. An inductively coupled plasma etcher was used to prepare periodic arrays with a depth of 1.5 μm on the PSS. Trimethylgallium, trimethylindium, ammonia, bicyclopentadienyl magnesium, and silane served as the precursors of Ga, In, N, Mg, and Si, respectively. The epitaxial structure of

Electrostatically actuated encased cantilevers

• Benoit X. E. Desbiolles,
• Gabriela Furlan,
• Adam M. Schwartzberg,
• Paul D. Ashby and
• Dominik Ziegler

Beilstein J. Nanotechnol. 2018, 9, 1381–1389, doi:10.3762/bjnano.9.130

• . Beginning with gold-coated silicon cantilevers (NSC 19, Mikromasch) (1), we use chemical vapor deposition to coat a 11 μm thick sacrificial polymer layer followed by a 2 μm thick parylene layer. The first layer serves as sacrificial film that defines the air gap and the parylene builds the encasement. Next

Chemistry for electron-induced nanofabrication

• Petra Swiderek,
• Hubertus Marbach and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2018, 9, 1317–1320, doi:10.3762/bjnano.9.124

• chemical vapor deposition (CVD), which is a thermally driven process [6]. Consequently, these precursors are optimized with respect to thermal chemistry and do not necessarily perform well in the electron-driven FEBID process. In fact, they often experience incomplete fragmentation so that material from

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate

• Aiden A. Martin and
• Philip J. Depond

Beilstein J. Nanotechnol. 2018, 9, 1282–1287, doi:10.3762/bjnano.9.120

• at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the

• and undergoes subsequent reaction with an electron beam. The process has major advantages over thermal chemical vapor deposition (CVD) processes one of which being that the substrate is not exposed to the elevated temperatures required for the thermal decomposition of precursor molecules. To date, the

A novel copper precursor for electron beam induced deposition

• Caspar Haverkamp,
• George Sarau,
• Mikhail N. Polyakov,
• Ivo Utke,
• Marcos V. Puydinger dos Santos,
• Silke Christiansen and
• Katja Höflich

Beilstein J. Nanotechnol. 2018, 9, 1220–1227, doi:10.3762/bjnano.9.113

• deposition should furthermore provide for conductive deposits with a preferably high copper content. Here, the metal-organic precursor bis(tert-butylacetoacetato)Cu(II) (CAS: 23670-45-3, C16H26CuO6) is introduced as a fluorine-free alternative. This precursor is known from chemical vapor deposition (CVD

Review on nanoparticles and nanostructured materials: history, sources, toxicity and regulations

• Jaison Jeevanandam,
• Ahmed Barhoum,
• Yen S. Chan,
• Alain Dufresne and
• Michael K. Danquah

Beilstein J. Nanotechnol. 2018, 9, 1050–1074, doi:10.3762/bjnano.9.98

• morphologies such as hollow tubes, ellipsoids or spheres. Fullerenes (C60), carbon nanotubes (CNTs), carbon nanofibers, carbon black, graphene (Gr), and carbon onions are included under the carbon-based NMs category. Laser ablation, arc discharge, and chemical vapor deposition (CVD) are the important

Single-crystalline FeCo nanoparticle-filled carbon nanotubes: synthesis, structural characterization and magnetic properties

• Rasha Ghunaim,
• Maik Scholz,
• Christine Damm,
• Bernd Rellinghaus,
• Rüdiger Klingeler,
• Bernd Büchner,
• Michael Mertig and
• Silke Hampel

Beilstein J. Nanotechnol. 2018, 9, 1024–1034, doi:10.3762/bjnano.9.95

• the filling material due to the confinement of the material within the hollow tubular cavity. Chemical vapor deposition (CVD) is a technique used to fill MNPs into CNTs via in situ filling, in which metallocene precursors are used as a carbon source and MNPs [22][30][37] or hydrocarbons (such as

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• sputtering [7], e-beam [16], physical vapor deposition [17], chemical vapor deposition (CVD) [18], and atomic layer deposition (ALD). The latter has been explored by using different precursors, e.g., Ce(thd)4, Ce(iPrCp)3 and Ce(mmp)4) [19][20][21][22][23], obtaining as-deposited film with polycrystalline

The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene

• Egor A. Kolesov,
• Mikhail S. Tivanov,
• Olga V. Korolik,
• Olesya O. Kapitanova,
• Xiao Fu,
• Hak Dong Cho,
• Tae Won Kang and
• Gennady N Panin

Beilstein J. Nanotechnol. 2018, 9, 704–710, doi:10.3762/bjnano.9.65

• , graphene functionalization techniques, and taking into account adsorption effects during nanoelectronic device engineering. Experimental Graphene was synthesized on Cu foil at 1020 °C by a chemical vapor deposition (CVD) method using a mixture of CH4 of 40 sccm and H2 of 10 sccm. Cu foil (Alfa Aesar

Sensing behavior of flower-shaped MoS₂ nanoflakes: case study with methanol and xylene

• Maryam Barzegar,
• Masoud Berahman and
• Azam Iraji zad

Beilstein J. Nanotechnol. 2018, 9, 608–615, doi:10.3762/bjnano.9.57

• methods have been applied to synthesize single or few-layered MoS2, including but not limited to mechanical cleavage, chemical exfoliation, hydrothermal synthesis and chemical vapor deposition [16][17][18][19][20][21][22][23]. The hydrothermal process is a scalable method to synthesize MoS2 nanosheets and

Engineering of oriented carbon nanotubes in composite materials

• Razieh Beigmoradi,
• Abdolreza Samimi and
• Davod Mohebbi-Kalhori

Beilstein J. Nanotechnol. 2018, 9, 415–435, doi:10.3762/bjnano.9.41

• arrangement of CNTs and sorting of nanofibers are done at the same time, as shown in Figure 9 [70]. Recently, direct spinning to a vertical chemical vapor deposition (CVD) synthesis zone has also been studied and is under development to produce CNT fibers and ribbons [44][71]. In a vertical CVD reactor, the

• of a wide range of materials, spraying can be combined with other methods to fabricate composite materials. In this method, a sheet of CNTs is produced by chemical vapor deposition (CVD) on a SiO2/Si substrate that is coated with a very thin layer of iron as a catalyst. The CNT rows have been grown

Electron interaction with copper(II) carboxylate compounds

• Michal Lacko,
• Peter Papp,
• Iwona B. Szymańska,
• Edward Szłyk and
• Štefan Matejčík

Beilstein J. Nanotechnol. 2018, 9, 384–398, doi:10.3762/bjnano.9.38

• remains and forms the layer. Activation of the precursor molecules can be induced by several processes. For instance, a catalytic or a thermal dissociation can occur. Plasma activated processes such as plasma enhanced chemical vapor deposition (PECVD) can be used for coating of the surface [1]. In the

Gas-assisted silver deposition with a focused electron beam

• Luisa Berger,
• Katarzyna Madajska,
• Iwona B. Szymanska,
• Katja Höflich,
• Mikhail N. Polyakov,
• Jakub Jurczyk,
• Carlos Guerra-Nuñez and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 224–232, doi:10.3762/bjnano.9.24

• (AgO2CC2F5), for silver FEBID based on reported successful chemical vapor deposition (CVD) experiments yielding silver films at moderate temperatures of around ≤200 °C [16]. This carboxylate compound showed to be susceptible to electron-induced dissociation, but it requires thermal conditions outside the

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• offer a new degree of freedom due to possible confinement effects. It has been previously demonstrated that GaN NTs may be synthesized using the following methods: 1) chemical vapor deposition of nitrogen precursor with gallium precursor in the presence of catalysts such as Ni, In or Au [11][12][13]; 2

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

• Kristjan Kalam,
• Helina Seemen,
• Peeter Ritslaid,
• Mihkel Rähn,
• Aile Tamm,
• Kaupo Kukli,
• Aarne Kasikov,
• Joosep Link,
• Raivo Stern,
• Salvador Dueñas,
• Helena Castán and
• Héctor García

Beilstein J. Nanotechnol. 2018, 9, 119–128, doi:10.3762/bjnano.9.14

• terms of the chemical composition. Altogether, 220–235 ALD cycles were deposited to obtain each thin film. The films were grown on various substrates: Si(100) and highly doped conductive Si substrates covered by a 10 nm TiN film grown by chemical vapor deposition. Before deposition, the Si(100) was

• , the separation is not perfect during the actual operation. The adsorption waves may partially overlap and meet in the vicinity of the substrate surface, causing the chemical vapor deposition to be less controlled. At the leading edge, the film thickness is usually higher and gradually decreases

Response under low-energy electron irradiation of a thin film of a potential copper precursor for focused electron beam induced deposition (FEBID)

• Leo Sala,
• Iwona B. Szymańska,
• Céline Dablemont,
• Anne Lafosse and
• Lionel Amiaud

Beilstein J. Nanotechnol. 2018, 9, 57–65, doi:10.3762/bjnano.9.8

• , Poland, for chemical vapor deposition (CVD) [6][7][8]. Among these complexes, two different compounds, [Cu2(EtNH2)2(μ-O2CC3F7)4] and [Cu2(EtNH2)2(μ-O2CC2F5)4] (Figure 1) will be studied in the present paper and hereafter named as compound A and compound B, respectively. They differ only by the length of