Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires

• Stephen Connaughton,
• Maria Koleśnik-Gray,
• Richard Hobbs,
• Olan Lotty,
• Justin D. Holmes and
• Vojislav Krstić

Beilstein J. Nanotechnol. 2016, 7, 1284–1288, doi:10.3762/bjnano.7.119

• different synthetic routes for obtaining Ge NWs [12][13], the novel self-seeding mechanism is of special interest [14][15]. The main advantage of this method is the elimination of dopant incorporation from the metal nanoparticle catalysts [11][12][13]. It was demonstrated that by selecting the synthesis

Microwave solvothermal synthesis and characterization of manganese-doped ZnO nanoparticles

• Jacek Wojnarowicz,
• Roman Mukhovskyi,
• Elzbieta Pietrzykowska,
• Sylwia Kusnieruk,
• Jan Mizeracki and
• Witold Lojkowski

Beilstein J. Nanotechnol. 2016, 7, 721–732, doi:10.3762/bjnano.7.64

• as solvent. The content of Mn2+ in Zn1−xMnxO ranged from 1 to 25 mol %. The following properties of the nanostructures were investigated: skeleton density, specific surface area (SSA), phase purity (XRD), lattice parameters, dopant content, average particle size, crystallite size distribution

• indication of additional phases. Spherical Zn1−xMnxO particles were obtained with monocrystalline structure and average particle sizes from 17 to 30 nm depending on the content of dopant. SEM images showed an impact of the dopant concentration on the morphology of the nanoparticles. Keywords: manganese

• , Fe, Cr, V) considerably increases the capabilities of applying that material in electronics, spintronics and optoelectronics [14][15][16]. Papers related to the magnetic properties of Mn2+-doped ZnO focus on the impact of homogeneity, phase purity and dopant content on the properties [17][18]. In the

Controlled graphene oxide assembly on silver nanocube monolayers for SERS detection: dependence on nanocube packing procedure

• Martina Banchelli,
• Bruno Tiribilli,
• Roberto Pini,
• Luigi Dei,
• Paolo Matteini and
• Gabriella Caminati

Beilstein J. Nanotechnol. 2016, 7, 9–21, doi:10.3762/bjnano.7.2

• obtained by Sigma-Aldrich. Aqueous solutions were prepared using ultrapure Milli-Q water. Silicon wafers (n-type, no dopant) were purchased from Sigma-Aldrich. Synthesis of AgNCs. EG (10 mL) was placed into a flask and heated under magnetic stirring in an oil bath at 150 °C for 1 h under a nitrogen flow

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

• Urs Gysin,
• Thilo Glatzel,
• Thomas Schmölzer,
• Adolf Schöner,
• Sergey Reshanov,
• Holger Bartolf and
• Ernst Meyer

Beilstein J. Nanotechnol. 2015, 6, 2485–2497, doi:10.3762/bjnano.6.258

• near-surface dopant reduction induced during sample surface preparation which in our case would result in a effective doping concentration at the surface of the cross section of NAl,eff = 4.1 × 1015 cm−3 utilizing Equation 3. In the case of the n-type substrate we get an effective doping concentration

Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

• Tino Wagner,
• Hannes Beyer,
• Patrick Reissner,
• Philipp Mensch,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2015, 6, 2193–2206, doi:10.3762/bjnano.6.225

• dopant profiling [26]. In Figure 4, we show experimental data of modulation indices and , calculated from the ωm and 2ωm sidebands, respectively, as a function of Udc for different electrostatic modulation amplitudes, Uac. During this experiment, the tip was positioned above a nickel electrode with

A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

• Daniela Lehr,
• Markus R. Wagner,
• Johanna Flock,
• Julian S. Reparaz,
• Clivia M. Sotomayor Torres,
• Alexander Klaiber,
• Thomas Dekorsy and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2015, 6, 2161–2172, doi:10.3762/bjnano.6.222

• prepare the materials at lower temperatures to make sure that Cl remains as a dopant in the ZnO host. Therefore, Cl@ZnO was synthesized via thermal decomposition of 2c for 10 h at lower temperature (350 °C) under N2/O2 atmosphere. The presence of Cl in the obtained material could be investigated by

Nanostructured superhydrophobic films synthesized by electrodeposition of fluorinated polyindoles

• Gabriela Ramos Chagas,
• Thierry Darmanin and
• Frédéric Guittard

Beilstein J. Nanotechnol. 2015, 6, 2078–2087, doi:10.3762/bjnano.6.212

• (such as thiophene, pyrrole or 3,4-ethylenedioxythiophene) [27][28][29][30] is probably the most important parameter. Then, the polymer can also be controlled by introducing hydrophobic/hydrophilic substituents or dopant agents [17][18][27][28][29][30]. In most of the cases, fluorocarbon or hydrocarbon

Nitrogen-doped graphene films from chemical vapor deposition of pyridine: influence of process parameters on the electrical and optical properties

• Andrea Capasso,
• Theodoros Dikonimos,
• Francesca Sarto,
• Alessio Tamburrano,
• Giovanni De Bellis,
• Maria Sabrina Sarto,
• Giuliana Faggio,
• Angela Malara,
• Giacomo Messina and
• Nicola Lisi

Beilstein J. Nanotechnol. 2015, 6, 2028–2038, doi:10.3762/bjnano.6.206

• improving the electrical conductivity to satisfy the requirements of various electronic applications [16]. Nevertheless, the product of electron mobility and dopant concentration generally remains constant, and thus there is a limit to the achievable improvement in electrical conductivity by this approach

Paramagnetism of cobalt-doped ZnO nanoparticles obtained by microwave solvothermal synthesis

• Jacek Wojnarowicz,
• Sylwia Kusnieruk,
• Tadeusz Chudoba,
• Stanislaw Gierlotka,
• Witold Lojkowski,
• Wojciech Knoff,
• Malgorzata I. Lukasiewicz,
• Bartlomiej S. Witkowski,
• Anna Wolska,
• Marcin T. Klepka,
• Tomasz Story and
• Marek Godlewski

Beilstein J. Nanotechnol. 2015, 6, 1957–1969, doi:10.3762/bjnano.6.200

• ; therefore, no change in lattice parameters is expected when Zn is replaced by Co in the ZnO crystal lattice. We assume, however, that increasing the concentration of the cobalt dopant should change the lattice parameters, which is related to the CoO cubic structure. In fact, the observed change in lattice

• was no effect due to the change in the morphology caused by increasing the cobalt dopant. Zn1−xCoxO NPs produced at low temperature (220 °C) by the MSS method are paramagnetic for Zn1−xCoxO in the range of 0–15 mol %. Annealing at 800 °C in nitrogen causes the formation of metallic inclusions, while

Metal hydrides: an innovative and challenging conversion reaction anode for lithium-ion batteries

• Luc Aymard,
• Yassine Oumellal and
• Jean-Pierre Bonnet

Beilstein J. Nanotechnol. 2015, 6, 1821–1839, doi:10.3762/bjnano.6.186

• and H2 is energetically favorable, but may be kinetically inhibited by separation into pure phases. The effects of various light-metal (Mg, Al, Li) and transition-metals (V, Cr, Mn, Fe, Co, Cu, Zn) dopant on the electrochemical properties of NiTiH hydrides as anodes for Li-ion batteries where

A facile method for the preparation of bifunctional Mn:ZnS/ZnS/Fe₃O₄ magnetic and fluorescent nanocrystals

• Houcine Labiadh,
• Tahar Ben Chaabane,
• Romain Sibille,
• Lavinia Balan and
• Raphaël Schneider

Beilstein J. Nanotechnol. 2015, 6, 1743–1751, doi:10.3762/bjnano.6.178

• dominant one at approximately 584 nm (visible, orange wavelength region). The first emission is associated with transitions involving vacancy states of the ZnS host material [24][30], while the second one originates from the Mn2+ dopant, which is excited via energy transfer of the ZnS host followed by the

Atomic scale interface design and characterisation

• Carla Bittencourt,
• Chris Ewels and
• Arkady V. Krasheninnikov

Beilstein J. Nanotechnol. 2015, 6, 1708–1711, doi:10.3762/bjnano.6.174

• absorption and emission devices require doping [4][5]. In this context, conventional bulk doping techniques must be adapted, given the large surface to volume ratio of nanostructures, surface segregation of dopant atoms is a severe drawback. Therefore detailed knowledge and control of the physical and

• simulated. An impressive example of how STM experiments and DFT calculations together can unravel the atomic structure of the material is given in the article by J. A. Lawlor and M. S. Ferreira [26] focused on the identification of dopant impurities in graphene. Synergy effects of TEM and DFT are

High photocatalytic activity of V-doped SrTiO₃ porous nanofibers produced from a combined electrospinning and thermal diffusion process

• Panpan Jing,
• Wei Lan,
• Qing Su and
• Erqing Xie

Beilstein J. Nanotechnol. 2015, 6, 1281–1286, doi:10.3762/bjnano.6.132

• of SrTiO3. Previous works showed that doping with 3d (V, Fe, Ni) and 4f (Nd, Sm, Er) ions can significantly decrease the band gap through the hybridization of the Ti-3d and dopant-d states [16][17]. Additionally, the doped SrTiO3 also has an improved conductivity. Several groups have reported the

Addition of Zn during the phosphine-based synthesis of indium phospide quantum dots: doping and surface passivation

• Natalia E. Mordvinova,
• Alexander A. Vinokurov,
• Oleg I. Lebedev,
• Tatiana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2015, 6, 1237–1246, doi:10.3762/bjnano.6.127

• the Zn dopant atoms are situated inside the InP nanoparticles. Moreover, doping with Zn is accompanied with the coverage of the QDs by a zinc shell. During the synthesis Zn myristate covers the QD nucleus and inhibits the particle growth. At the same time the zinc shell leads to an increase of the

• that the doping of III–V QDs creates an opportunity to produce materials with new optical properties that vary depending on the dopant type. This opportunity has promoted the development of synthetic methods for incorporating dopants into InP QDs. There are some efforts focused on the incorporation of

• spectra were deconvoluted in energy coordinates by using two Gaussian functions: One is related to the excitonic peak and the other to surface defects (Figure 9a) in case of non-doped sample and to the dopant in case of doped QDs, respectively (Figure 9b). Figure 10a shows how the excitonic peaks change

Transformation of hydrogen titanate nanoribbons to TiO₂ nanoribbons and the influence of the transformation strategies on the photocatalytic performance

• Melita Rutar,
• Nejc Rozman,
• Matej Pregelj,
• Carla Bittencourt,
• Romana Cerc Korošec,
• Andrijana Sever Škapin,
• Aleš Mrzel,
• Srečo D. Škapin and
• Polona Umek

Beilstein J. Nanotechnol. 2015, 6, 831–844, doi:10.3762/bjnano.6.86

• dopant in the TiO2 matrix significantly reduced the photoactivity of the TiO2 nanoribbons, regardless of the doping method. This suggests that adsorption properties of ispropanol to the surface of the N-doped TiO2 nanoribbons were significnalty reduced in comparison with the undoped TiO2 nanoribbons. A

Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

• Florian Waltz,
• Hans-Christoph Schwarz,
• Andreas M. Schneider,
• Stefanie Eiden and
• Peter Behrens

Beilstein J. Nanotechnol. 2015, 6, 799–808, doi:10.3762/bjnano.6.83

• the formation of crystalline ZnO [30]. Doping is carried out by the simple addition of the corresponding dopant salt to the deposition solution. In addition to doping, the microstructure of the resulting film, which involves the crystallite size as well as the morphology of the crystallites and the

Tm-doped TiO₂ and Tm₂Ti₂O₇ pyrochlore nanoparticles: enhancing the photocatalytic activity of rutile with a pyrochlore phase

• Desiré M. De los Santos,
• Javier Navas,
• Teresa Aguilar,
• Antonio Sánchez-Coronilla,
• Concha Fernández-Lorenzo,
• Rodrigo Alcántara,
• Jose Carlos Piñero,
• Ginesa Blanco and
• Joaquín Martín-Calleja

Beilstein J. Nanotechnol. 2015, 6, 605–616, doi:10.3762/bjnano.6.62

• in order to determine the influence of the dopant concentration and annealing temperature on the phase, crystallinity, and electronic and optical properties of the resulting material. Various characterization techniques were utilized such as X-ray diffraction, Raman spectroscopy, X-ray photoelectron

• study, Tm-doped TiO2 nanoparticles were synthesized using a water-controlled hydrolysis reaction. The effect of the dopant concentration and the annealing temperature on the resulting phase, crystallinity, and electronic and optical properties was analyzed. A pyrochlore phase (Tm2Ti2O7) was observed in

• . Moreover, for both phases, the higher the annealing temperature, the higher the t, due to the sintering of the nanocrystals. Generally, t decreases with an increased dopant concentration. The introduction of a Tm3+ ion into the structure can create structural distortions that break the crystal continuity

Silica micro/nanospheres for theranostics: from bimodal MRI and fluorescent imaging probes to cancer therapy

• Shanka Walia and
• Amitabha Acharya

Beilstein J. Nanotechnol. 2015, 6, 546–558, doi:10.3762/bjnano.6.57

• of dopant ions in a nanoparticle environment. Thus these new classes of materials can be used as potential fluorescent probes for biomedical imaging. Singh et al. [16] reported the synthesis of luminescent YVO4:Eu3+ NPs incorporated inside mesoporous silica NPs through a sol–gel process. The

Palladium nanoparticles anchored to anatase TiO₂ for enhanced surface plasmon resonance-stimulated, visible-light-driven photocatalytic activity

• Kah Hon Leong,
• Hong Ye Chu,
• Shaliza Ibrahim and
• Pichiah Saravanan

Beilstein J. Nanotechnol. 2015, 6, 428–437, doi:10.3762/bjnano.6.43

• compare to TiO2 nanotubes (250 min) [28]. Similarly, Kwak et al. found that by incorporating Pd into TiO2 led to an improved hydrogen production compared to pure TiO2 [29]. Hence, it is clear that the inclusion of noble metals either as dopant or composite contributes to an enhanced visible-light

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO2, (ii) implantation preannealing, (iii) high-dose dopant implantation, and (iv) implantation postannealing. Scanning electron microscopy and transmission electron microscopy were used to characterize the

• 180 keV, and (iii) the last set of samples were co-implanted with both Se and Te atoms under the same conditions as previously mentioned. Figure 1 shows the predicted dopant and vacancy concentration profiles induced by implantation using the Stopping and Range of Ions in Matter (SRIM) software. This

• defects are also taken into account, allowing the distribution of point defects created in the target material to be obtained [27][28]. The dopant distributions follow a Gaussian distribution with a maximum concentration of 5 × 1020 atoms/cm3 located at a depth of 55 nm. Given that the more Ge-rich, Ge–Se

Tunable white light emission by variation of composition and defects of electrospun Al₂O₃–SiO₂ nanofibers

• Jinyuan Zhou,
• Gengzhi Sun,
• Hao Zhao,
• Xiaojun Pan,
• Zhenxing Zhang,
• Yujun Fu,
• Yanzhe Mao and
• Erqing Xie

Beilstein J. Nanotechnol. 2015, 6, 313–320, doi:10.3762/bjnano.6.29

• a Gaussian fit. The 420 nm-centered broad bands are regarded as blue light centers, the 520 nm and 550 nm bands are green light centers, and the 610 nm band as a red emission center. Obviously, a suitable dopant of Si or Al into the composite samples are required for light emission. It can be seen

X-ray photoelectron spectroscopy of graphitic carbon nanomaterials doped with heteroatoms

• Toma Susi,
• Thomas Pichler and
• Paola Ayala

Beilstein J. Nanotechnol. 2015, 6, 177–192, doi:10.3762/bjnano.6.17

• been long studied for this and other purposes [22][23]. One of the key issues for controlled heteroatom doping is the detection and identification of the dopant atoms, and the further analysis of their concentration and atomic bonding environment in the studied materials. Compared to bulk solids

• , individual nano-objects are composed of far fewer atoms, and thus usual dopant concentrations correspond to a rather limited number of heteroatoms in the lattice. A typical sample must therefore be composed of innumerable such nanostructures in order to reach a measurable quantity, and thus any variability

• been widely studied [2][12][40][41][42][43][44][45]. Since the binding energies of even the simplest dopant structures are still being debated, discussion of complicated hybrid structures or doping with more than one element at the same time will be omitted. However, we will endeavor to comprehensively

Materials and characterization techniques for high-temperature polymer electrolyte membrane fuel cells

• Roswitha Zeis

Beilstein J. Nanotechnol. 2015, 6, 68–83, doi:10.3762/bjnano.6.8

• acid reaches all areas of the membrane sheet. This slow doping process can be monitored by confocal Raman microscopy. The integrated intensities of the bands at 1570 cm−1 and 1611 cm−1 were used as indicators for the interaction between the AB-PBI host and the phosphoric acid dopant. These two peaks

Synthesis of radioactively labelled CdSe/CdS/ZnS quantum dots for in vivo experiments

• Gordon M. Stachowski,
• Christoph Bauer,
• Christian Waurisch,
• Denise Bargheer,
• Peter Nielsen,
• Jörg Heeren,
• Stephen G. Hickey and
• Alexander Eychmüller

Beilstein J. Nanotechnol. 2014, 5, 2383–2387, doi:10.3762/bjnano.5.247

• properties (e.g., dopant emission, PL enhancement or quenching). Experimental Synthesis of CdSe/CdS QDs Into a 25 mL three-neck flask, 10 mL of 1-octadecene (ODE), 0.4 mmol of Cd(oleate)2 as a stock, 2 g hexadecylamine and 2 g trioctylphosphine oxide was loaded. After degassing, the temperature was set to

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

• Vinay Kabra,
• Lubna Aamir and
• M. M. Malik

Beilstein J. Nanotechnol. 2014, 5, 2216–2221, doi:10.3762/bjnano.5.230

• concentrations of dopant, but these results were not suitable for the above atomic ratio, which was determined after optimization. Device fabrication The p-type ZnO thin film was formed on the n-type Si substrate using a dip coating technique with an immersion rate of 9 mm/s, a dwell time of 20 s, and a