Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

• Tomi Roinila,
• Xiao Yu,
• Jarmo Verho,
• Tie Li,
• Pasi Kallio,
• Matti Vilkko,
• Anran Gao and
• Yuelin Wang

Beilstein J. Nanotechnol. 2014, 5, 964–972, doi:10.3762/bjnano.5.110

• 10.3762/bjnano.5.110 Abstract Silicon nanowire-based field-effect transistors (SiNW FETs) have demonstrated the ability of ultrasensitive detection of a wide range of biological and chemical targets. The detection is based on the variation of the conductance of a nanowire channel, which is caused by the

• technologies, silicon nanowire (SiNW)-based field-effect transistors (FETs) [1] are one of the most promising building blocks for the next generation of electrical circuits in recognizing a wide range of biological and chemical targets. They have been successfully used in the detection of DNA [2], pH [3

• dynamics change rapidly. Conclusion Silicon nanowire-based field-effect transistors (SiNW FETs) have been experimentally used for direct, label-free, highly selective, real-time detection of biological and chemical targets at very low concentrations. Most SiNW FET detectors are fabricated with SOI wafers

An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH₃ gas sensor applications

• Elnaz Akbari,
• Vijay K. Arora,
• Aria Enzevaee,
• Mohamad. T. Ahmadi,
• Mehdi Saeidmanesh,
• Mohsen Khaledian,
• Hediyeh Karimi and
• Rubiyah Yusof

Beilstein J. Nanotechnol. 2014, 5, 726–734, doi:10.3762/bjnano.5.85

• the bonding characteristics between these molecules and the CNT [33][34]. It is always important to obtain p-type and/or n-type semiconducting CNT to incorporate them in a complementary logic. A p–n junction is a result of this complementarity. n-Type and p-type nanoscale field effect transistors can

Enhanced photocatalytic activity of Ag–ZnO hybrid plasmonic nanostructures prepared by a facile wet chemical method

• Sini Kuriakose,
• Vandana Choudhary,
• Biswarup Satpati and
• Satyabrata Mohapatra

Beilstein J. Nanotechnol. 2014, 5, 639–650, doi:10.3762/bjnano.5.75

• including UV lasers [1], field effect transistors [2], dye sensitized solar cells [3][4], surface enhanced Raman spectroscopy (SERS) [5] and biomedical applications [6][7][8][9][10]. ZnO nanostructures are promising photocatalysts because of their high quantum efficiency, high redox potential, superior

Analytical development and optimization of a graphene–solution interface capacitance model

• Hediyeh Karimi,
• Rasoul Rahmani,
• Reza Mashayekhi,
• Leyla Ranjbari,
• Amir H. Shirdel,
• Niloofar Haghighian,
• Parisa Movahedi,
• Moein Hadiyan and
• Razali Ismail

Beilstein J. Nanotechnol. 2014, 5, 603–609, doi:10.3762/bjnano.5.71

• important properties of field effect transistors (FETs) is in our focus. The quantum capacitance of electrolyte-gated transistors (EGFETs) along with a relevant equivalent circuit is suggested in terms of Fermi velocity, carrier density, and fundamental physical quantities. The analytical model is compared

• reach up to 200,000 cm2/V·s with a typical carrier concentration of 2·1011 cm−2 [7][14]. Recently attempts have also been made to use graphene as a novel channel material in field effect transistors (FETs) for electronics [15]. The remarkable properties of graphene reported so far included high

CoPc and CoPcF₁₆ on gold: Site-specific charge-transfer processes

• Fotini Petraki,
• Heiko Peisert,
• Johannes Uihlein,
• Umut Aygül and
• Thomas Chassé

Beilstein J. Nanotechnol. 2014, 5, 524–531, doi:10.3762/bjnano.5.61

• light-emitting diodes, field-effect transistors, solar cells, and spintronic devices have been in the focus of research [1][2][3][4]. For several transition metal phthalocyanine (TMPc) layers on noble metal surfaces (e.g., Au and Ag) a charge transfer toward the central metal atom has been reported

Tensile properties of a boron/nitrogen-doped carbon nanotube–graphene hybrid structure

• Kang Xia,
• Haifei Zhan,
• Ye Wei and
• Yuantong Gu

Beilstein J. Nanotechnol. 2014, 5, 329–336, doi:10.3762/bjnano.5.37

• for the application as fuel cell electrocatalyst, in field-effect transistors, and in lithium batteries. Thus, especially N-doped nanotube–graphene hybrid structures have been envisioned to have promising potential applications in the field of catalysis, gas storage and energy storage [16]. The

Apertureless scanning near-field optical microscopy of sparsely labeled tobacco mosaic viruses and the intermediate filament desmin

• Alexander Harder,
• Mareike Dieding,
• Volker Walhorn,
• Sven Degenhard,
• Andreas Brodehl,
• Christina Wege,
• Hendrik Milting and
• Dario Anselmetti

Beilstein J. Nanotechnol. 2013, 4, 510–516, doi:10.3762/bjnano.4.60

• as the formation of TMV-based semiconductive ZnO composites in field effect transistors [30]. Modifications of the viral shell proteins allow the introduction of target-oriented chemical functionalities on the nanotube surface [31]. By means of fluorescent labeling these modifications can now easily

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

• Denis E. Presnov,
• Sergey V. Amitonov,
• Pavel A. Krutitskii,
• Valentina V. Kolybasova,
• Igor A. Devyatov,
• Vladimir A. Krupenin and
• Igor I. Soloviev

Beilstein J. Nanotechnol. 2013, 4, 330–335, doi:10.3762/bjnano.4.38

• ; Introduction Over the past decade experimental and theoretical studies of semiconductor nanowire field-effect transistors (NW FET) made of silicon on insulator (SOI) have been of great interest to researchers. The large surface-to-volume ratio of the nanowire allows one to create extremely sensitive charge

High-resolution electrical and chemical characterization of nm-scale organic and inorganic devices

• Pierre Eyben

Beilstein J. Nanotechnol. 2013, 4, 318–319, doi:10.3762/bjnano.4.35

• increase in “More than Moore” developments targeting energy (photovoltaic, energy storage), imaging (e.g., quantitative medical imaging), sensor/actuators linked to CMOS-base circuitry, biochips, etc. The utilization of graphene in order to process high mobility (both for holes and electrons) field-effect

• transistors is also being intensively studied. In all these cases, metrology is a challenge, and no universal solution is identifiable. Moreover in many cases it becomes also very difficult to establish a complete assessment of accuracy, precision and spatial resolution due to a lack of appropriate 3-D

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

• Farhad Larki,
• Arash Dehzangi,
• Alam Abedini,
• Ahmad Makarimi Abdullah,
• Elias Saion,
• Sabar D. Hutagalung,
• Mohd N. Hamidon and
• Jumiah Hassan

Beilstein J. Nanotechnol. 2012, 3, 817–823, doi:10.3762/bjnano.3.91

• structures using 3-D TCAD simulation results. The analysis presented shows that the device can be considered as a simple FET device that includes no doping concentration gradient and no junction. Unlike the accumulation metal–oxide–semiconductor field-effect transistors (AMOSFETs) and junctionless nanowire

Influence of the diameter of single-walled carbon nanotube bundles on the optoelectronic performance of dry-deposited thin films

• Kimmo Mustonen,
• Toma Susi,
• Antti Kaskela,
• Patrik Laiho,
• Ying Tian,
• Albert G. Nasibulin and
• Esko I. Kauppinen

Beilstein J. Nanotechnol. 2012, 3, 692–702, doi:10.3762/bjnano.3.79

• : bundle diameter; sheet resistance; SWCNT; thin film; transmittance; Introduction Single-walled carbon nanotubes (SWCNT) offer great application potential in future electronics, such as micro-electromechanical devices [1], sensors [2][3], transparent electrodes [4][5][6], thin-film field-effect

• transistors [7][8] and capacitors [9]. However, most methods of fabricating devices rely on dispersion of the nanotubes in solutions. While the techniques are suitable for research, process-induced damage, such as tube cutting due to sonication [10][11], or residual surfactants severely limit device

Self-assembled monolayers and titanium dioxide: From surface patterning to potential applications

• Yaron Paz

Beilstein J. Nanotechnol. 2011, 2, 845–861, doi:10.3762/bjnano.2.94

• hybrid microelectronic systems containing titanium dioxide together with organic components. Along this line, the improvement of the performance of organic field-effect transistors

Optical properties of fully conjugated cyclo[n]thiophenes – An experimental and theoretical approach

• Elena Mena-Osteritz,
• Fan Zhang,
• Günther Götz,
• Peter Reineker and
• Peter Bäuerle

Beilstein J. Nanotechnol. 2011, 2, 720–726, doi:10.3762/bjnano.2.78

• organic field-effect transistors, organic solar cells, and sensors [1][2][3][4]. Typically, such π-conjugated systems comprise extended linear one-dimensional (1D) structures showing interesting optoelectronic properties. In the solid state they represent organic semiconductors, whereas by doping with

Terthiophene on Au(111): A scanning tunneling microscopy and spectroscopy study

• Berndt Koslowski,
• Anna Tschetschetkin,
• Norbert Maurer,
• Elena Mena-Osteritz,
• Peter Bäuerle and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 561–568, doi:10.3762/bjnano.2.60

• semiconductors. Especially, oligothiophenes are very promising candidates for molecular electronics and have been exploited to form organic field-effect transistors [1][2], optical switches [3], light emitting diodes [4], and solar cells [5][6][7]. To optimize the performance of such devices, the properties of

Organic–inorganic nanosystems

• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 363–364, doi:10.3762/bjnano.2.41

• , doped π-conjugated oligomers and polymers play an important role due to their semiconducting behavior. As in standard electronics, the combination of p- and n-doped organic components leads to device applications such as organic light emitting diodes (OLED), organic field effect transistors (OFET) and