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Search for "semiconductors" in Full Text gives 335 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS2 field-effect transistors

  • Jakub Jadwiszczak,
  • Pierce Maguire,
  • Conor P. Cullen,
  • Georg S. Duesberg and
  • Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

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  • Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany 10.3762/bjnano.11.117 Abstract Helium ion irradiation is a known method of tuning the electrical conductivity and charge carrier mobility of novel two-dimensional semiconductors. Here, we report a systematic
  • materials; Introduction Layered two-dimensional (2D) semiconductors have come to the fore in recent years as promising candidates for the implementation of flexible, transparent, and low-power electronics. In particular, transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), have
  • of well-performing monolayer TMD films [3][4][5], leading to viable large-scale integration of on-chip TMD FETs. With device miniaturization, it becomes key to understand the impact of defects such as chalcogen vacancies on the electrical transport properties of FETs based on 2D semiconductors. This
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Published 04 Sep 2020

Structural and electronic properties of SnO2 doped with non-metal elements

  • Jianyuan Yu,
  • Yingeng Wang,
  • Yan Huang,
  • Xiuwen Wang,
  • Jing Guo,
  • Jingkai Yang and
  • Hongli Zhao

Beilstein J. Nanotechnol. 2020, 11, 1321–1328, doi:10.3762/bjnano.11.116

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  • . Nguyen successfully prepared p-type N-doped SnO2 films using magnetron sputtering [9]. The results show that the SnO2 films were n-type semiconductors, and the concentration of free carriers in the film increased as the temperature for sedimentation increased. Also, p-type semiconductors were
  • replacement doping. S-doping forms p-type semiconductors, and F-doping forms n-type semiconductors. The optical analysis results revealed that F-doped SnO2 possesses the highest reflectivity in the infrared region, and is most suitable as a low-emissivity coating material. Schematic diagram of the structure
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Published 03 Sep 2020

Growth of a self-assembled monolayer decoupled from the substrate: nucleation on-command using buffer layers

  • Robby Reynaerts,
  • Kunal S. Mali and
  • Steven De Feyter

Beilstein J. Nanotechnol. 2020, 11, 1291–1302, doi:10.3762/bjnano.11.113

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  • formation by acting as a physical barrier between the substrate and the assembling moiety, buffer layers are also widely used to study intrinsic electronic properties of functional organic systems such as organic semiconductors [32][33] and films of 1D/2D polymers [34][35][36][37] via electronic decoupling
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Published 01 Sep 2020

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111)

  • Maximilian Schaal,
  • Takumi Aihara,
  • Marco Gruenewald,
  • Felix Otto,
  • Jari Domke,
  • Roman Forker,
  • Hiroyuki Yoshida and
  • Torsten Fritz

Beilstein J. Nanotechnol. 2020, 11, 1168–1177, doi:10.3762/bjnano.11.101

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  • consequences for possible applications in molecular electronic devices. Low work function metals such as Al, Ca or Ba are typically used to achieve a low electron injection barrier, which is necessary to build high-performance n-type organic semiconductors [41]. However, these substrates suffer from a high
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Published 04 Aug 2020

A new photodetector structure based on graphene nanomeshes: an ab initio study

  • Babak Sakkaki,
  • Hassan Rasooli Saghai,
  • Ghafar Darvish and
  • Mehdi Khatir

Beilstein J. Nanotechnol. 2020, 11, 1036–1044, doi:10.3762/bjnano.11.88

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  • applications possible. Saturable absorption, as a consequence of Pauli blocking and non-equilibrium carriers, results in hot luminescence that cannot be attained in conventional semiconductors. Hence, these properties make it an ideal photonic and optoelectronic material [1][2][3][4]. Photodetectors are a key
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Published 15 Jul 2020

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

  • Elena I. Monaico,
  • Eduard V. Monaico,
  • Veaceslav V. Ursaki,
  • Shashank Honnali,
  • Vitalie Postolache,
  • Karin Leistner,
  • Kornelius Nielsch and
  • Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

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  • crystallographically oriented and current line oriented pores has been demonstrated in a variety of semiconductors [1][2][3], to date, only crystallographically oriented pores were observed in GaAs crystalline wafers. This observation is a factor limiting the possibilities for the preparation of various GaAs
  • porous semiconductors although the anodization in environmentally friendly electrolytes, including aqueous solutions of NaCl, has attracted increasing attention during the last decade [5][18][19][20][21]. In this paper, we report on the electrochemical porosification of GaAs(111) wafers in neutral NaCl
  • produced by GaAs anodization in NaCl electrolyte are similar to those previously observed in GaAs samples with the same carrier concentration anodized in HCl electrolyte [1]. This observation corroborates the results obtained from other III–V semiconductors, which state that the etching behavior depends
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Published 29 Jun 2020

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

  • Vadim Morari,
  • Aida Pantazi,
  • Nicolai Curmei,
  • Vitalie Postolache,
  • Emil V. Rusu,
  • Marius Enachescu,
  • Ion M. Tiginyanu and
  • Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

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  • demonstrated on p-type Si [2][4] because p-type doping is still a big challenge to ZnO-based semiconductors. Liang et al. demonstrated a ZnMgO/p-Si heterojunction solar-blind UV photodetector with a BeO buffer layer [35]. In terms of the crystal structure of ZnMgO films used in photodetectors, three types of
  • random local-potential fluctuations occur in highly doped and compensated semiconductors [39] and solid solutions [40] due to the microscopic inhomogeneity caused by impurity distribution in the first case and composition distribution in the second case. This spatially fluctuating band structure results
  • to the higher concentration of acceptor levels introduced during spin coating. Long duration relaxation of photoconductivity and persistent photoconductivity was previously observed in highly doped and compensated semiconductors [39], porous semiconductors [48] and solid solutions [40]. The origin of
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Published 12 Jun 2020

Templating effect of single-layer graphene supported by an insulating substrate on the molecular orientation of lead phthalocyanine

  • K. Priya Madhuri,
  • Abhay A. Sagade,
  • Pralay K. Santra and
  • Neena S. John

Beilstein J. Nanotechnol. 2020, 11, 814–820, doi:10.3762/bjnano.11.66

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  • specific device applications. Keywords: conducting atomic force microscopy (C-AFM); lead phthalocyanine (PbPc); molecular orientation; single-layer graphene; substrate effect; two-dimensional grazing incidence X-ray diffraction (2D-GIXRD); Introduction Organic semiconductors have been extensively used in
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Published 19 May 2020

Light–matter interactions in two-dimensional layered WSe2 for gauging evolution of phonon dynamics

  • Avra S. Bandyopadhyay,
  • Chandan Biswas and
  • Anupama B. Kaul

Beilstein J. Nanotechnol. 2020, 11, 782–797, doi:10.3762/bjnano.11.63

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  • for the so-called Urbach formulism. Ramos and Luzzi [49] used this Urbach formulism to explain the behavior displayed in the radiation emission band of semiconductors at high-excitation levels, and the slope of the low-energy edge of the spectrum was characterized with an empirical parameter E0 on a
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Published 12 May 2020

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

  • Stefania Castelletto,
  • Faraz A. Inam,
  • Shin-ichiro Sato and
  • Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

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Published 08 May 2020
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  • semiconductors is degraded by dislocations and lattice mismatch at the interface of different bandgap materials, the RTDs based on heterojunctions between armchair graphene nanoribbons (AGNRs) and armchair boron nitride nanoribbons (ABNNRs) have shown superior performance because of the very low lattice mismatch
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Published 24 Apr 2020

Preparation, characterization and photocatalytic performance of heterostructured CuO–ZnO-loaded composite nanofiber membranes

  • Wei Fang,
  • Liang Yu and
  • Lan Xu

Beilstein J. Nanotechnol. 2020, 11, 631–650, doi:10.3762/bjnano.11.50

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  • , photocatalytic purification might become the main means for the treatment of water and air pollutants [4]. Photocatalytic reactions on metal oxide semiconductors can degrade many pollutants and are, thus, of great interest [5]. Photogenerated charge carriers formed through bandgap excitation can reduce or
  • oxidize species adsorbed on the semiconductor material. However, the high degree of recombination of charge carriers is disadvantage [6]. The coupling of two different semiconductors can yield an efficient charge separation, leading to a vector transmission of photogenerated electrons and holes from one
  • narrow direct bandgap of 1.2–1.79 eV [14]. Because of that, CuO is usually used in combination with large-bandgap semiconductors, such as ZnO and TiO2, in order to improve their photocatalytic activity under solar light irradiation [15]. It was reported that the p–n heterojunction between ZnO and CuO has
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Published 15 Apr 2020

Interfacial charge transfer processes in 2D and 3D semiconducting hybrid perovskites: azobenzene as photoswitchable ligand

  • Nicole Fillafer,
  • Tobias Seewald,
  • Lukas Schmidt-Mende and
  • Sebastian Polarz

Beilstein J. Nanotechnol. 2020, 11, 466–479, doi:10.3762/bjnano.11.38

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  • ; organic–inorganic hybrid materials; particle synthesis; semiconductors; transport across interfaces; Introduction Recently the class of hybrid perovskites attracted great attention in materials chemistry and physics [1][2][3]. In addition to an outstanding performance in photovoltaics, a peculiar feature
  • combination of azobenzene molecules with conducting or semiconducting materials is of high interest. In connection with semiconductors the occurrence of interesting phenomena has been proposed. The symmetry-allowed π→π* transition and the subsequent structural relaxation can be affected by the electronic
  • inorganic layer with only corner-sharing octahedra. The broadened reflexes of 2D-AzoOC12 suggest the formation of a crystal structure with corner- and face-sharing octahedra [43]. Both crystal types are direct semiconductors [44], which is why the structural differences are not important for our further
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Published 17 Mar 2020

Current measurements in the intermittent-contact mode of atomic force microscopy using the Fourier method: a feasibility analysis

  • Berkin Uluutku and
  • Santiago D. Solares

Beilstein J. Nanotechnol. 2020, 11, 453–465, doi:10.3762/bjnano.11.37

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  • ; intermittent contact; Fourier analysis; tapping-mode AFM; Introduction Conductive atomic force microscopy (C-AFM), a contact-mode technique, has been extensively utilized to investigate local electrical properties of nanoscale systems, such as organic solar cells [1][2][3][4][5][6][7], semiconductors [8][9
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Published 13 Mar 2020

DFT calculations of the structure and stability of copper clusters on MoS2

  • Cara-Lena Nies and
  • Michael Nolan

Beilstein J. Nanotechnol. 2020, 11, 391–406, doi:10.3762/bjnano.11.30

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  • variety of research areas [1]. These include catalysis [2][3], photonics [4][5], batteries [6], sensors [7][8] and semiconductors and electronics [9][10][11]. More recently, 2D materials have been explored as copper diffusion barriers in CMOS interconnect structures [12][13][14][15]. Furthermore, to
  • semiconductors, unlike graphene, and have thus garnered significant interest in the electronics industry [4]. Often, the properties of the monolayer are different from those of the bulk materials. For example, MoS2 has an indirect bandgap in its bulk structure, while it exhibits a direct bandgap as a monolayer
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Published 26 Feb 2020

Implementation of data-cube pump–probe KPFM on organic solar cells

  • Benjamin Grévin,
  • Olivier Bardagot and
  • Renaud Demadrille

Beilstein J. Nanotechnol. 2020, 11, 323–337, doi:10.3762/bjnano.11.24

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  • -processed organic donor–acceptor blends called bulk heterojunctions (BHJ), for polycrystalline direct bandgap semiconductors such as CdTe, CuInxGa(1−x)Se2 and Cu2ZnSnS4 and for hybrid organic–inorganic perovskite solar cells. Whatever material used, improving the performance of the solar cell requires a
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Published 12 Feb 2020

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

  • Botond Sánta,
  • Dániel Molnár,
  • Patrick Haiber,
  • Agnes Gubicza,
  • Edit Szilágyi,
  • Zsolt Zolnai,
  • András Halbritter and
  • Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

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  • fundamental barriers: (i) Further miniaturization of the CMOS transistors below 10 nm channel length is technologically extremely demanding and cost-inefficient. (ii) Their digital operation is not sustainable below the scale of the Fermi wavelength, which is typically ca 10 nm in layered semiconductors. (iii
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Published 08 Jan 2020

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

  • Markus Tautz,
  • Maren T. Kuchenbrod,
  • Joachim Hertkorn,
  • Robert Weinberger,
  • Martin Welzel,
  • Arno Pfitzner and
  • David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

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  • Markus Tautz Maren T. Kuchenbrod Joachim Hertkorn Robert Weinberger Martin Welzel Arno Pfitzner David Diaz Diaz OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany Universität Regensburg, Universitätsstr. 31, 93053 Regensburg, Germany Friedrich-Schiller-Universität Jena
  • . David Díaz Díaz dedicates this paper to the memory of Professor Catalina Ruiz-Pérez. Funding This research was funded by OSRAM Opto Semiconductors GmbH. David Díaz Díaz thanks the Deutsche Forschungsgemeinschaft (DFG) for the Heisenberg Professorship Award, and the Spanish Ministry of Science
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Published 03 Jan 2020

Antimony deposition onto Au(111) and insertion of Mg

  • Lingxing Zan,
  • Da Xing,
  • Abdelaziz Ali Abd-El-Latif and
  • Helmut Baltruschat

Beilstein J. Nanotechnol. 2019, 10, 2541–2552, doi:10.3762/bjnano.10.245

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  • bulk electrolyte. This was also investigated by other researchers [6][7][8][12], but the structure of underpotentially deposited Sb adlayer on Au(111) was not resolved on an atomic level. It is well known that Sb [13][14][15], Bi [16][17][18], etc. can be used to form bimetallic semiconductors. These
  • semiconductors possess an interesting property and have been widely used in the field of electrocatalysis and materials. It is therefore the aim of the present study to examine the initial stages of Sb-deposition on Au(111). Furthermore, we demonstrate the insertion of Mg into multilayers of Sb on Au(111) using
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Published 18 Dec 2019

Synthesis and acetone sensing properties of ZnFe2O4/rGO gas sensors

  • Kaidi Wu,
  • Yifan Luo,
  • Ying Li and
  • Chao Zhang

Beilstein J. Nanotechnol. 2019, 10, 2516–2526, doi:10.3762/bjnano.10.242

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  • concentration. Due to their excellent properties and cost efficiency, gas sensors based on metal oxide semiconductors, such as ZnO [5], SnO2 [6], WO3 [7], TiO2 [8], Er-SnO2 [9], Au-In2O3 [10], GO-WO3 [11] and Ni-SnO2/G [12] have been widely studied until now. However, their sensing properties regarding low
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Published 16 Dec 2019

Mobility of charge carriers in self-assembled monolayers

  • Zhihua Fu,
  • Tatjana Ladnorg,
  • Hartmut Gliemann,
  • Alexander Welle,
  • Asif Bashir,
  • Michael Rohwerder,
  • Qiang Zhang,
  • Björn Schüpbach,
  • Andreas Terfort and
  • Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

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  • the determination of mobilities in macroscopic samples. Keywords: conducting atomic force microscopy; lateral charge transport; nanografting; organic semiconductor; self-assembled monolayer; Introduction Charge transport in organic semiconductors plays a central role in the field of molecular
  • SAMs yielded a rather high charge carrier mobility of 6.7 cm2·V−1·s−1. Although these studies represent a major step forward with regard to determining intrinsic charge carrier mobilities in organic semiconductors, it has to be noted that in this previous approach the conductive islands were formed in
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Published 11 Dec 2019

Semitransparent Sb2S3 thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

  • Jako S. Eensalu,
  • Atanas Katerski,
  • Erki Kärber,
  • Lothar Weinhardt,
  • Monika Blum,
  • Clemens Heske,
  • Wanli Yang,
  • Ilona Oja Acik and
  • Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

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  • penetration depth for light of 600 nm wavelength is about 100 nm, assuming α = 1 × 105 cm−1 (Figure 3c). Electron mobility tends to be greater in semiconductors when compared to hole mobility, although the efficacy of electron transport is also subject to change when the absorber thickness is varied. In this
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Published 06 Dec 2019

Polyvinylpyrrolidone as additive for perovskite solar cells with water and isopropanol as solvents

  • Chen Du,
  • Shuo Wang,
  • Xu Miao,
  • Wenhai Sun,
  • Yu Zhu,
  • Chengyan Wang and
  • Ruixin Ma

Beilstein J. Nanotechnol. 2019, 10, 2374–2382, doi:10.3762/bjnano.10.228

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  • remarkable light absorption capacity [5] and the tunable band gap [6] of inorganic–organic lead halide perovskite crystals make them suitable for the production of organic semiconductors [7], photodetectors [8], and photovoltaics [5]. In 2009, Kojima et al. achieved a breakthrough in using mesoporous TiO2 as
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Published 05 Dec 2019

Multiwalled carbon nanotube based aromatic volatile organic compound sensor: sensitivity enhancement through 1-hexadecanethiol functionalisation

  • Nadra Bohli,
  • Meryem Belkilani,
  • Juan Casanova-Chafer,
  • Eduard Llobet and
  • Adnane Abdelghani

Beilstein J. Nanotechnol. 2019, 10, 2364–2373, doi:10.3762/bjnano.10.227

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  • . The considerable decrease in the conductivity is due to the oxidizing nature of the injected vapours. As the tested oxygen-treated and gold-decorated MWCNTs are p-type semiconductors, the adsorption of the oxidant vapour molecules leads to a transfer of the majority carriers of p-type semiconductors
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Published 04 Dec 2019

Improvement of the thermoelectric properties of a MoO3 monolayer through oxygen vacancies

  • Wenwen Zheng,
  • Wei Cao,
  • Ziyu Wang,
  • Huixiong Deng,
  • Jing Shi and
  • Rui Xiong

Beilstein J. Nanotechnol. 2019, 10, 2031–2038, doi:10.3762/bjnano.10.199

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  • Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
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Published 25 Oct 2019
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