ZnO and MXenes as electrode materials for supercapacitor devices

• Ameen Uddin Ammar,
• Ipek Deniz Yildirim,
• Feray Bakan and
• Emre Erdem

Beilstein J. Nanotechnol. 2021, 12, 49–57, doi:10.3762/bjnano.12.4

• in semiconductors is fundamentally the same, regardless of composition. Defects generate bandgap states that either generate electrons in the conduction band or holes in the valence band. Therefore, we believe that the discussion, based on experimental results, of the magnitude of this effect for 2D

• environment of the lattice atoms and defects. With the aid of advanced characterization techniques one may get valuable information on site symmetry, atomic bonding, and, in particular, on the bandgap energy of semiconductors. Raman, photoluminescence (PL), UV–vis, and electron paramagnetic resonance (EPR

• ]. Indeed, this emission has nothing to do with the defects. In semiconductors; one may obtain a hint about the value of Eg. For instance, for bulk ZnO, the emission due to the e–h recombination appears in the UV region around 380 nm, which corresponds to ca. 3.2 eV. Hence, this emission is also called near

Unravelling the interfacial interaction in mesoporous SiO₂@nickel phyllosilicate/TiO₂ core–shell nanostructures for photocatalytic activity

• Bridget K. Mutuma,
• Xiluva Mathebula,
• Isaac Nongwe,
• Bonakele P. Mtolo,
• Boitumelo J. Matsoso,
• Rudolph Erasmus,
• Zikhona Tetana and
• Neil J. Coville

Beilstein J. Nanotechnol. 2020, 11, 1834–1846, doi:10.3762/bjnano.11.165

• metal oxides, such as ZrO2 [16] and SiO2 [17], influence the morphology and surface features of the resulting binary metal oxide semiconductors. Moreover, these binary metal oxide semiconductors act as charge-transfer catalysts and significantly reduce the electron–hole recombination [18][19]. Another

• functionality of nanomaterials greatly influence their photoactivity. UV–vis diffuse reflectance spectroscopy is a useful technique for probing the optoelectronic properties, band structure and molecular energy levels of semiconductors. It gives relevant information on the optical activity of nanomaterials as

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• Rue de la Girafe, 14000 Caen, France NXP Semiconductors, Esplanade Anton Philips 2, 14905, Colombelles, France 10.3762/bjnano.11.159 Abstract This work addresses the need for a comprehensive methodology for nanoscale electrical testing dedicated to the analysis of both “front end of line” (FEOL

• ; integrated PIN diode; nanoprobing; scanning probe microscopy (SPM); scanning microwave impedance microscopy (sMIM); spectroscopy; Introduction In “front end of line” (FEOL) processing, the control, detection, and quantification of the effective 2D distributions of active dopants in semiconductors are

• the back-contact resistance [11], is experimentally determined. Therefore, at a fixed applied bias, the SSRM measurements map the variation in concentration of mobile majority carriers in doped semiconductors. A high load on the tip is required to obtain the spreading resistance. In fact, for silicon

Absorption and photoconductivity spectra of amorphous multilayer structures

• Oxana Iaseniuc and
• Mihail Iovu

Beilstein J. Nanotechnol. 2020, 11, 1757–1763, doi:10.3762/bjnano.11.158

• applied field becomes higher than the internal electrical field. For amorphous semiconductors the barrier height of an Al–semiconductor contact, with a work function of φm = 4.18 eV, is φb = 0.40–0.75 eV [14][17]. This is very important from a practical point of view, because there is the possibility to

• polarity for all investigated amorphous thin-film structures. This result can be explained by drift processes of non-equilibrium carriers in amorphous semiconductors as well as by the contact phenomena between interfaces of different amorphous materials and the metallic electrodes. Transmission spectra T

Antimicrobial metal-based nanoparticles: a review on their synthesis, types and antimicrobial action

• Matías Guerrero Correa,
• Fernanda B. Martínez,
• Cristian Patiño Vidal,
• Camilo Streitt,
• Juan Escrig and
• Carol Lopez de Dicastillo

Beilstein J. Nanotechnol. 2020, 11, 1450–1469, doi:10.3762/bjnano.11.129

• nanocages with diameters ranging from 300 to 500 nm [55]. The solvothermal synthesis method is a technique used to prepare a variety of materials, such as metals, semiconductors, ceramics, and polymers. In this process, the chemical reaction takes place in a sealed vessel where solvents are brought to a

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• within the nanostructures and are optimally delivered to active regions of the device [1]. An application for this effect is to fabricate antireflective surfaces, which has been extensively studied not only for semiconductors, but also for glass and polymer surfaces [2][3]. This property is widely used

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• GaAs [62], and P vacancies in InP(110) [63]. Due to the common nature of these defects in other semiconductors and the similarity in imaging character, we thus attribute this defect to most likely be a Si vacancy. Further discussion of our assignment and additional evidence is given later as part of

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany 10.3762/bjnano.11.117 Abstract Helium ion irradiation is a known method of tuning the electrical conductivity and charge carrier mobility of novel two-dimensional semiconductors. Here, we report a systematic

• materials; Introduction Layered two-dimensional (2D) semiconductors have come to the fore in recent years as promising candidates for the implementation of flexible, transparent, and low-power electronics. In particular, transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), have

• of well-performing monolayer TMD films [3][4][5], leading to viable large-scale integration of on-chip TMD FETs. With device miniaturization, it becomes key to understand the impact of defects such as chalcogen vacancies on the electrical transport properties of FETs based on 2D semiconductors. This

Structural and electronic properties of SnO₂ doped with non-metal elements

• Jianyuan Yu,
• Yingeng Wang,
• Yan Huang,
• Xiuwen Wang,
• Jing Guo,
• Jingkai Yang and
• Hongli Zhao

Beilstein J. Nanotechnol. 2020, 11, 1321–1328, doi:10.3762/bjnano.11.116

• . Nguyen successfully prepared p-type N-doped SnO2 films using magnetron sputtering [9]. The results show that the SnO2 films were n-type semiconductors, and the concentration of free carriers in the film increased as the temperature for sedimentation increased. Also, p-type semiconductors were

• replacement doping. S-doping forms p-type semiconductors, and F-doping forms n-type semiconductors. The optical analysis results revealed that F-doped SnO2 possesses the highest reflectivity in the infrared region, and is most suitable as a low-emissivity coating material. Schematic diagram of the structure

Growth of a self-assembled monolayer decoupled from the substrate: nucleation on-command using buffer layers

• Robby Reynaerts,
• Kunal S. Mali and
• Steven De Feyter

Beilstein J. Nanotechnol. 2020, 11, 1291–1302, doi:10.3762/bjnano.11.113

• formation by acting as a physical barrier between the substrate and the assembling moiety, buffer layers are also widely used to study intrinsic electronic properties of functional organic systems such as organic semiconductors [32][33] and films of 1D/2D polymers [34][35][36][37] via electronic decoupling

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111)

• Maximilian Schaal,
• Takumi Aihara,
• Marco Gruenewald,
• Felix Otto,
• Jari Domke,
• Roman Forker,
• Hiroyuki Yoshida and
• Torsten Fritz

Beilstein J. Nanotechnol. 2020, 11, 1168–1177, doi:10.3762/bjnano.11.101

• consequences for possible applications in molecular electronic devices. Low work function metals such as Al, Ca or Ba are typically used to achieve a low electron injection barrier, which is necessary to build high-performance n-type organic semiconductors [41]. However, these substrates suffer from a high

A new photodetector structure based on graphene nanomeshes: an ab initio study

• Babak Sakkaki,
• Hassan Rasooli Saghai,
• Ghafar Darvish and
• Mehdi Khatir

Beilstein J. Nanotechnol. 2020, 11, 1036–1044, doi:10.3762/bjnano.11.88

• applications possible. Saturable absorption, as a consequence of Pauli blocking and non-equilibrium carriers, results in hot luminescence that cannot be attained in conventional semiconductors. Hence, these properties make it an ideal photonic and optoelectronic material [1][2][3][4]. Photodetectors are a key

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• crystallographically oriented and current line oriented pores has been demonstrated in a variety of semiconductors [1][2][3], to date, only crystallographically oriented pores were observed in GaAs crystalline wafers. This observation is a factor limiting the possibilities for the preparation of various GaAs

• porous semiconductors although the anodization in environmentally friendly electrolytes, including aqueous solutions of NaCl, has attracted increasing attention during the last decade [5][18][19][20][21]. In this paper, we report on the electrochemical porosification of GaAs(111) wafers in neutral NaCl

• produced by GaAs anodization in NaCl electrolyte are similar to those previously observed in GaAs samples with the same carrier concentration anodized in HCl electrolyte [1]. This observation corroborates the results obtained from other III–V semiconductors, which state that the etching behavior depends

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• demonstrated on p-type Si [2][4] because p-type doping is still a big challenge to ZnO-based semiconductors. Liang et al. demonstrated a ZnMgO/p-Si heterojunction solar-blind UV photodetector with a BeO buffer layer [35]. In terms of the crystal structure of ZnMgO films used in photodetectors, three types of

• random local-potential fluctuations occur in highly doped and compensated semiconductors [39] and solid solutions [40] due to the microscopic inhomogeneity caused by impurity distribution in the first case and composition distribution in the second case. This spatially fluctuating band structure results

• to the higher concentration of acceptor levels introduced during spin coating. Long duration relaxation of photoconductivity and persistent photoconductivity was previously observed in highly doped and compensated semiconductors [39], porous semiconductors [48] and solid solutions [40]. The origin of

Templating effect of single-layer graphene supported by an insulating substrate on the molecular orientation of lead phthalocyanine

• K. Priya Madhuri,
• Abhay A. Sagade,
• Pralay K. Santra and
• Neena S. John

Beilstein J. Nanotechnol. 2020, 11, 814–820, doi:10.3762/bjnano.11.66

• specific device applications. Keywords: conducting atomic force microscopy (C-AFM); lead phthalocyanine (PbPc); molecular orientation; single-layer graphene; substrate effect; two-dimensional grazing incidence X-ray diffraction (2D-GIXRD); Introduction Organic semiconductors have been extensively used in

Light–matter interactions in two-dimensional layered WSe₂ for gauging evolution of phonon dynamics

• Avra S. Bandyopadhyay,
• Chandan Biswas and
• Anupama B. Kaul

Beilstein J. Nanotechnol. 2020, 11, 782–797, doi:10.3762/bjnano.11.63

• for the so-called Urbach formulism. Ramos and Luzzi [49] used this Urbach formulism to explain the behavior displayed in the radiation emission band of semiconductors at high-excitation levels, and the slope of the low-energy edge of the spectrum was characterized with an empirical parameter E0 on a

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

• Majid Sanaeepur

Beilstein J. Nanotechnol. 2020, 11, 688–694, doi:10.3762/bjnano.11.56

• semiconductors is degraded by dislocations and lattice mismatch at the interface of different bandgap materials, the RTDs based on heterojunctions between armchair graphene nanoribbons (AGNRs) and armchair boron nitride nanoribbons (ABNNRs) have shown superior performance because of the very low lattice mismatch

Preparation, characterization and photocatalytic performance of heterostructured CuO–ZnO-loaded composite nanofiber membranes

• Wei Fang,
• Liang Yu and
• Lan Xu

Beilstein J. Nanotechnol. 2020, 11, 631–650, doi:10.3762/bjnano.11.50

• , photocatalytic purification might become the main means for the treatment of water and air pollutants [4]. Photocatalytic reactions on metal oxide semiconductors can degrade many pollutants and are, thus, of great interest [5]. Photogenerated charge carriers formed through bandgap excitation can reduce or

• oxidize species adsorbed on the semiconductor material. However, the high degree of recombination of charge carriers is disadvantage [6]. The coupling of two different semiconductors can yield an efficient charge separation, leading to a vector transmission of photogenerated electrons and holes from one

• narrow direct bandgap of 1.2–1.79 eV [14]. Because of that, CuO is usually used in combination with large-bandgap semiconductors, such as ZnO and TiO2, in order to improve their photocatalytic activity under solar light irradiation [15]. It was reported that the p–n heterojunction between ZnO and CuO has

Interfacial charge transfer processes in 2D and 3D semiconducting hybrid perovskites: azobenzene as photoswitchable ligand

• Nicole Fillafer,
• Tobias Seewald,
• Lukas Schmidt-Mende and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2020, 11, 466–479, doi:10.3762/bjnano.11.38

• ; organic–inorganic hybrid materials; particle synthesis; semiconductors; transport across interfaces; Introduction Recently the class of hybrid perovskites attracted great attention in materials chemistry and physics [1][2][3]. In addition to an outstanding performance in photovoltaics, a peculiar feature

• combination of azobenzene molecules with conducting or semiconducting materials is of high interest. In connection with semiconductors the occurrence of interesting phenomena has been proposed. The symmetry-allowed π→π* transition and the subsequent structural relaxation can be affected by the electronic

• inorganic layer with only corner-sharing octahedra. The broadened reflexes of 2D-AzoOC12 suggest the formation of a crystal structure with corner- and face-sharing octahedra [43]. Both crystal types are direct semiconductors [44], which is why the structural differences are not important for our further

Current measurements in the intermittent-contact mode of atomic force microscopy using the Fourier method: a feasibility analysis

• Berkin Uluutku and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2020, 11, 453–465, doi:10.3762/bjnano.11.37

• ; intermittent contact; Fourier analysis; tapping-mode AFM; Introduction Conductive atomic force microscopy (C-AFM), a contact-mode technique, has been extensively utilized to investigate local electrical properties of nanoscale systems, such as organic solar cells [1][2][3][4][5][6][7], semiconductors [8][9

DFT calculations of the structure and stability of copper clusters on MoS₂

• Cara-Lena Nies and
• Michael Nolan

Beilstein J. Nanotechnol. 2020, 11, 391–406, doi:10.3762/bjnano.11.30

• variety of research areas [1]. These include catalysis [2][3], photonics [4][5], batteries [6], sensors [7][8] and semiconductors and electronics [9][10][11]. More recently, 2D materials have been explored as copper diffusion barriers in CMOS interconnect structures [12][13][14][15]. Furthermore, to

• semiconductors, unlike graphene, and have thus garnered significant interest in the electronics industry [4]. Often, the properties of the monolayer are different from those of the bulk materials. For example, MoS2 has an indirect bandgap in its bulk structure, while it exhibits a direct bandgap as a monolayer

Implementation of data-cube pump–probe KPFM on organic solar cells

• Benjamin Grévin,
• Olivier Bardagot and
• Renaud Demadrille

Beilstein J. Nanotechnol. 2020, 11, 323–337, doi:10.3762/bjnano.11.24

• -processed organic donor–acceptor blends called bulk heterojunctions (BHJ), for polycrystalline direct bandgap semiconductors such as CdTe, CuInxGa(1−x)Se2 and Cu2ZnSnS4 and for hybrid organic–inorganic perovskite solar cells. Whatever material used, improving the performance of the solar cell requires a

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• fundamental barriers: (i) Further miniaturization of the CMOS transistors below 10 nm channel length is technologically extremely demanding and cost-inefficient. (ii) Their digital operation is not sustainable below the scale of the Fermi wavelength, which is typically ca 10 nm in layered semiconductors. (iii

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

• Markus Tautz,
• Maren T. Kuchenbrod,
• Joachim Hertkorn,
• Robert Weinberger,
• Martin Welzel,
• Arno Pfitzner and
• David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

• Markus Tautz Maren T. Kuchenbrod Joachim Hertkorn Robert Weinberger Martin Welzel Arno Pfitzner David Diaz Diaz OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany Universität Regensburg, Universitätsstr. 31, 93053 Regensburg, Germany Friedrich-Schiller-Universität Jena

• . David Díaz Díaz dedicates this paper to the memory of Professor Catalina Ruiz-Pérez. Funding This research was funded by OSRAM Opto Semiconductors GmbH. David Díaz Díaz thanks the Deutsche Forschungsgemeinschaft (DFG) for the Heisenberg Professorship Award, and the Spanish Ministry of Science