Near-field visualization of plasmonic lenses: an overall analysis of characterization errors

• Jing Wang,
• Yongqi Fu,
• Zongwei Xu and
• Fengzhou Fang

Beilstein J. Nanotechnol. 2015, 6, 2069–2077, doi:10.3762/bjnano.6.211

• stochastic process which causes the roughened top surface of the sample. However, the roughening process is a dynamically instable state and competes with surface smoothing process. Therefore, internal stress is generated when a balanced state is reached, unless thermal annealing is arranged after the

• patterning. However, oxidation of the metal film will be caused by thermal annealing. The internal stress can lead to deformation of the fabricated structures and the NSOM measurement results will change accordingly. The internal stress τ is determined by the following parameters where d is the ion

• . For the fixed process parameters, selecting the a substrate materials with small ρ can reduce the internal stress. Theoretically, thermal annealing or natural annealing is necessary after FIB structuring for the purpose of eliminating the internal stress. With regard the quality of the results thermal

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

• settings [20] as well as by optimizing scanning strategies [21]. However, the purity of FEBID materials obtained with organic precursors still remains an issue. Recently, post-growth purification methods using electron beam irradiation in combination with thermal annealing and co-injection of reactive

• limits of 2 atom % there is no fundamental difference to the trends and absolute values for Cu stated for conventional annealing. The Cu/C = 1:6.6 ratio after laser annealing of 1 min at around 158 °C (see section Experimental) is smaller than for thermal annealing, however, time and annealing

• temperature were lower for the laser than for thermal annealing. Figure 4 c shows that precipitation of Cu nanocrystals is not fully uniform across the line length in contrast to the conventionally annealed lines in Figure 3b and Figure 3c (see also Figure S5 in Supporting Information File 1). At the vicinity

Transformations of PTCDA structures on rutile TiO₂ induced by thermal annealing and intermolecular forces

• Szymon Godlewski,
• Jakub S. Prauzner-Bechcicki,
• Thilo Glatzel,
• Ernst Meyer and
• Marek Szymoński

Beilstein J. Nanotechnol. 2015, 6, 1498–1507, doi:10.3762/bjnano.6.155

• differently ordered structures either due to additional energy provided by thermal annealing or when the influence of intermolecular forces is increased by the enlarged amount of deposited molecules. Proper adjustment of molecular coverage and substrate temperature during deposition allows for fabrication of

• ordered layer. In contrast, our main concern here is the transformation of the molecular structure driven by thermal annealing. Thus, we systematically analyse the impact of post-deposition annealing and deposition at elevated temperatures on the self-assembly processes for different adsorbate coverage

• the result of relatively weak permanent quadrupole moment interactions and dispersion interactions [36]. Therefore, the meandering chains are not stable against thermal annealing, as will be discussed in the following sections. A detailed description of the intermolecular forces of PTCDA molecules

Enhanced fullerene–Au(111) coupling in (2√3 × 2√3)R30° superstructures with intermolecular interactions

• Michael Paßens,
• Rainer Waser and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2015, 6, 1421–1431, doi:10.3762/bjnano.6.147

• of the ac tunnelling current achieved by modulating the sample bias after switching off the feedback loop. The single crystal Au(111) substrate (MaTecK, Germany) was cleaned in UHV by cycles of Ne+ ion sputtering (1 kV, 10 min) and thermal annealing (600 °C, 20 min). The cleanliness was checked by

The Kirkendall effect and nanoscience: hollow nanospheres and nanotubes

• Abdel-Aziz El Mel,
• Ryusuke Nakamura and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2015, 6, 1348–1361, doi:10.3762/bjnano.6.139

• a solid state reaction, occurring upon thermal annealing of core–shell ZnO/Al2O3 nanowires [23][62]. In such a process, the material forming the nanotube is defined by the two initial compounds constituting the core and the shell. As it can be seen in Figure 8, the formation of voids occurs at the

• interface within the ZnO which, in this case, plays the role of the fast diffusing material. The strategy demonstrated by Li and Penner in 2005 was adopted by many groups for the synthesis of nanotubes by thermal annealing of metal nanowires under a controlled atmosphere such as sulfur, selenium or oxygen

• -diffusion rate of the metal ions. To create metal oxide nanotubes, two different annealing approaches can be used: (i) rapid thermal annealing [65] and (ii) gradient thermal annealing [66]. In general, the first approach is preferred over the second since the annealing time for a fixed temperature can be

Structural transitions in electron beam deposited Co–carbonyl suspended nanowires at high electrical current densities

• Gian Carlo Gazzadi and
• Stefano Frabboni

Beilstein J. Nanotechnol. 2015, 6, 1298–1305, doi:10.3762/bjnano.6.134

• deposits coming from incomplete fragmentation of the metalorganic molecules, typically employed as precursors. Several methods have been investigated, mainly consisting in the deposit treatment by thermal annealing [17][18] or e-beam irradiation [19], but also the design and synthesis of new precursors is

Simple approach for the fabrication of PEDOT-coated Si nanowires

• Mingxuan Zhu,
• Marielle Eyraud,
• Judikael Le Rouzo,
• Nadia Ait Ahmed,
• Florence Boulc’h,
• Claude Alfonso,
• Philippe Knauth and
• François Flory

Beilstein J. Nanotechnol. 2015, 6, 640–650, doi:10.3762/bjnano.6.65

• high cost. The combination of spin-on doping (SOD) and rapid thermal annealing (RTM) was also attempted to achieve a core–shell Si homojunction [13][14], but this method failed to precisely control the thickness of the shell. Core–shell, radial p–n junctions can also be realized by simply spin coating

Influence of grain size and composition, topology and excess free volume on the deformation behavior of Cu–Zr nanoglasses

• Daniel Şopu and
• Karsten Albe

Beilstein J. Nanotechnol. 2015, 6, 537–545, doi:10.3762/bjnano.6.56

• previous studies [12] it is worth to investigate how thermal annealing affects the structure of glass–glass interfaces and the plastic deformation mechanisms in the Zr-rich NG in comparison to the Cu-rich NG. The NGs were annealed at 800 K (≈0.85 Tg of the bulk glass) for 2 ns. After annealing, the NGs

• the plastic behavior of Cu36Zr64 NG deviates from the homogeneous BMG. Finally, we also examined, the structure of the planar interface in the Zr-rich metallic glass after thermal annealing. The system with one planar interface is annealed following the same procedure as in the case of Cu-rich glass

• deformation observed in the BMG. However, after a thermal annealing step, the excess free volume is equilibrating and only topological disorder can still be found in the glass–glass interfaces, which is having a minor influence on the formation of shear transformation zones. In the Zr-rich system (Cu36Zr64

In situ scanning tunneling microscopy study of Ca-modified rutile TiO₂(110) in bulk water

• Giulia Serrano,
• Beatrice Bonanni,
• Tomasz Kosmala,
• Marco Di Giovannantonio,
• Ulrike Diebold,
• Klaus Wandelt and
• Claudio Goletti

Beilstein J. Nanotechnol. 2015, 6, 438–443, doi:10.3762/bjnano.6.44

• originally present before immersion in water, this result supports that calcium had segregated to the surface after thermal annealing in UHV, thus enforcing the interpretation of the rows as being Ca-induced. At present, it is not known which surface sites Ca is preferentially bound to on the rutile TiO2(110

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• semiconductor. In the present work, the impact of high dose selenium and tellurium (3.5 × 1015 atoms/cm2) implantations on the morphology of polycrystalline Ge thin films is presented, as well as the evolution of the film morphology with thermal annealing conditions (temperature and time). Results and

• Discussion 340 nm thick Ge layers were deposited on the native oxide layer of a silicon substrate at room temperature (RT), under high vacuum, by magnetron sputtering. Recrystallization was then performed by rapid thermal annealing at 600 °C under vacuum (P ≈ 3 × 10−5 mbar) and the Ge layer was implanted

• = 3.1 µm, (ii) an intermediate TB between 3.9 µm and 4.8 µm, and (iii) a high TB = 8.7 µm. Figure 3 presents the influence of the thermal annealing on the morphology of the co-implanted Se/Te sample. Thermal treatments induce large modifications of the implantation-induced defect morphology. For 4.1

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

• D. J. Lockwood,
• N. L. Rowell,
• A. Benkouider,
• A. Ronda,
• L. Favre and
• I. Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2498–2504, doi:10.3762/bjnano.5.259

• transformation from the small Au nanoclusters located within the SiO2-cover-free nanopits to the Au0.18Si0.82 eutectic alloy is obtained by thermal annealing at 550 °C for 30 min. The annealing and growth experiments were performed in the MBE growth chamber of a Riber SIVA32 system with a base pressure of 10−11

Gas sensing properties of nanocrystalline diamond at room temperature

• Marina Davydova,
• Pavel Kulha,
• Alexandr Laposa,
• Karel Hruska,
• Pavel Demo and
• Alexander Kromka

Beilstein J. Nanotechnol. 2014, 5, 2339–2345, doi:10.3762/bjnano.5.243

• several hours up to several days. Only thermal annealing of the sensor reduces the sensor recovery speed [1][2]. Recently, much attention has been given to solid-state integrating-type (i.e., accumulating- or dosimeter-type) gas sensing devices, which are able to overcome the aforementioned drawbacks [3

Carbon nano-onions (multi-layer fullerenes): chemistry and applications

• Juergen Bartelmess and
• Silvia Giordani

Beilstein J. Nanotechnol. 2014, 5, 1980–1998, doi:10.3762/bjnano.5.207

• water and had diameters of about 20 nm. For the 1,3-dipolar cycloaddition, the CNOs were purified by thermal annealing followed by heating under reflux in 3 N HNO3 and subsequent thermal annealing to remove potential organic functionalities. The reaction mixture, containing the purified CNOs, N

• -ethylglycine and dodecanal (or in another approach tridecanal) was refluxed, yielding the covalently functionalized CNO materials (Scheme 3A). The other two reactions presented in this study were carried out with purified carboxylated CNOs, which were fabricated from raw CNO material through thermal annealing

High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology

• Jorge Trasobares,
• François Vaurette,
• Marc François,
• Hans Romijn,
• Jean-Louis Codron,
• Dominique Vuillaume,
• Didier Théron and
• Nicolas Clément

Beilstein J. Nanotechnol. 2014, 5, 1918–1925, doi:10.3762/bjnano.5.202

• -off processes are used. Immediately before evaporation, native oxide is removed with dilute HF solution to allow good electrical contact with the substrate. Single crystal Au nanodots can be obtained after thermal annealing at 260 °C during 2 h under N2 atmosphere. At the end of the process, these

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• of a uniform Au film on a silicon surface, with a successive rapid thermal annealing (RTA), can be used for the fabrication of Au nanoparticles on large surfaces. Even if the nanoparticles have a random position and diameter, the average diameter and diameter dispersion can be partially controlled by

Growth and characterization of CNT–TiO₂ heterostructures

• Yucheng Zhang,
• Ivo Utke,
• Johann Michler,
• Gabriele Ilari,
• Marta D. Rossell and
• Rolf Erni

Beilstein J. Nanotechnol. 2014, 5, 946–955, doi:10.3762/bjnano.5.108

• such as H3PO4 (together with a chromic acid) and HNO3 triggered conformal growth of ruthenium [26] and SiO2, TiO2, and Al2O3 (after thermal annealing) [27]. Such surface defects seem to be naturally present on multi-wall CNTs with a given surface density. They are responsible for local metal oxide

Thermal stability and reduction of iron oxide nanowires at moderate temperatures

• Annalisa Paolone,
• Marco Angelucci,
• Stefania Panero,
• Maria Grazia Betti and
• Carlo Mariani

Beilstein J. Nanotechnol. 2014, 5, 323–328, doi:10.3762/bjnano.5.36

• of the Fe 3p core level. The XPS Fe 3p core-level data of the Fe2O3 NWs, taken at rt and after subsequent steps of thermal annealing, are shown in Figure 4. The Fe 3p signal of the clean Fe2O3 system at rt, which is roughly centered at 56 eV BE, presents the characteristic structure that is

Fabrication of carbon nanomembranes by helium ion beam lithography

• Xianghui Zhang,
• Henning Vieker,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2014, 5, 188–194, doi:10.3762/bjnano.5.20

• systems (NEMS). Postsynthetic modifications, e.g., multilayer stacking [5], thermal annealing [6], chemical functionalization [7], and perforation [8][9], lead to a further tailoring of the performance of the CNMs and enable various investigations and applications. The cross-linking of SAMs is so far

A nano-graphite cold cathode for an energy-efficient cathodoluminescent light source

• Alexander N. Obraztsov,
• Victor I. Kleshch and
• Elena A. Smolnikova

Beilstein J. Nanotechnol. 2013, 4, 493–500, doi:10.3762/bjnano.4.58

• vacuum electronic technologies, including outgasing with thermal annealing at about 400 °C and porous Ti getter insertion into the sealed device. Commercially available CL phosphor materials with the chemical composition ZnS CdS:CuAl for green lamps, Y2O2S:Eu for red lamps, and ZnS:Ag for blue lamps were

Characterization and properties of micro- and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology

• Maria Eugenia Toimil-Molares

Beilstein J. Nanotechnol. 2012, 3, 860–883, doi:10.3762/bjnano.3.97

• also demonstrated that as-deposited CdTe nanowires consist of nanocrystals with grain sizes up to 60 nm. Thermal annealing increases the wire resistivity and influences the grain size. The preparation of CdTe nanowire diodes with semiconductor homojunctions by using a single electrodeposition bath

Highly ordered ultralong magnetic nanowires wrapped in stacked graphene layers

• Abdel-Aziz El Mel,
• Jean-Luc Duvail,
• Eric Gautron,
• Wei Xu,
• Chang-Hwan Choi,
• Benoit Angleraud,
• Agnès Granier and
• Pierre-Yves Tessier

Beilstein J. Nanotechnol. 2012, 3, 846–851, doi:10.3762/bjnano.3.95

• nanotubes that we synthesized in a previous study by thermal annealing of Ni nanowires organized in an amorphous carbon film [29]. Thus, although the synthesis method developed in this work is completely different to the one used in our previous study [29], the nanostructures obtained with both methods

• the nickel-catalyzed crystallization of carbon by thermal annealing. During the post-annealing stage of the carbon-containing nickel nanowires, the carbon atoms diffuse and homogenously dissolve in the nickel phase [31][32]. As the limit of the solid solubility of carbon in the nickel phase is reached

• thermal annealing (Table 1). The decrease in the coercive fields suggests that the surface of the nickel wire, i.e., the interface with the graphene shell, becomes very smooth after annealing since morphological defects favor pinning of the domain walls and, thus, result in higher coercivity [34]. The

Generation and agglomeration behaviour of size-selected sub-nm iron clusters as catalysts for the growth of carbon nanotubes

• Ravi Joshi,
• Benjamin Waldschmidt,
• Jörg Engstler,
• Rolf Schäfer and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2011, 2, 734–739, doi:10.3762/bjnano.2.80

• insight as to what extent catalyst agglomeration under thermal annealing of these particles occurs under typical CVD growth conditions. Larger catalyst particles in the size range of 3–10 nm can maintain their size throughout the growth process of CNTs, which typically operates at 750 °C or higher [7

• further [13]. The [FeN/Al@SiOx] grid substrates are then transferred under air to the CVD chamber and a water-assisted catalyzed CNT growth with ethylene as carbon source [12][13] is performed under different thermal annealing conditions (for the detailed experimental setup of the molecular beam and a

• description of the CVD apparatus see the Experimental section). Cluster deposition followed by thermal annealing of size-selected clusters with a diameter of 0.6–0.9 nm and at a coverage of 3% of a monolayer on a [Al@SiOx] TEM grid up to temperatures of 600 °C did not lead to any detectable cluster

Platinum nanoparticles from size adjusted functional colloidal particles generated by a seeded emulsion polymerization process

• Nicolas Vogel,
• Ulrich Ziener,
• Achim Manzke,
• Alfred Plettl,
• Paul Ziemann,
• Johannes Biskupek,
• Clemens K. Weiss and
• Katharina Landfester

Beilstein J. Nanotechnol. 2011, 2, 459–472, doi:10.3762/bjnano.2.50

• colloid particles. b) Arrays of Pt NPs produced by plasma-assisted removal of the organic material and subsequent thermal annealing. Pt-precursor loaded PS colloids on a Si3N4 membrane in the saturated state after exposure to isotropic oxygen plasma for 25 min. a) The diameters of the lumps average out to

Formation of precise 2D Au particle arrays via thermally induced dewetting on pre-patterned substrates

• Dong Wang,
• Ran Ji and
• Peter Schaaf

Beilstein J. Nanotechnol. 2011, 2, 318–326, doi:10.3762/bjnano.2.37

• on the dewetting process of thin metal films on an inert substrate. Dewetting of metallic films on a substrate is driven by the reduction of the surface energy of the thin film and of the interface energy between the film and substrate, and can be induced by thermal annealing [9][10][11], pulsed