Is the Ne operation of the helium ion microscope suitable for electron backscatter diffraction sample preparation?

• Annalena Wolff

Beilstein J. Nanotechnol. 2021, 12, 965–983, doi:10.3762/bjnano.12.73

• expected from the calculations as the maximal Ga implantation concentration is below the critical threshold required to phase transform to Cu3Ga. The KAM and grain boundary evaluation do not show significant strain in these regions. The maximal number of defects and implantation concentration is lower for

• calculations suggest that a concentration of ≈36% of Ga can be found within these topographically higher regions which exceeds the required concentration threshold to form the Cu3Ga phase. In addition, a higher strain and defect density can be observed here suggesting significant crystal structure alterations

• Ga impurity concentration in the top layer which is above the Ga concentration threshold required to form a Cu3Ga phase. The Monte Carlo simulations suggest that 22 vacancies are created per incident ion. As a result, 9.4 × 1012 vacancies are created within the first 3 nm until the steady-state

The role of convolutional neural networks in scanning probe microscopy: a review

• Ido Azuri,
• Irit Rosenhek-Goldian,
• Neta Regev-Rudzki,
• Georg Fantner and
• Sidney R. Cohen

Beilstein J. Nanotechnol. 2021, 12, 878–901, doi:10.3762/bjnano.12.66

• indicate a higher probability that the image belongs to the second category and usually a classifier probability threshold of 0.5 is chosen to differentiate between the classes. Loss function The above output, together with the true labels of the images are used for calculating the error in the predictions

• process of forward and backward propagation is done many times until some accuracy/loss threshold is reached. The loss function has different formulae for different tasks. For example, binary-cross entropy, or categorical-cross entropy losses can be applied, respectively, for binary and categorical

Comprehensive review on ultrasound-responsive theranostic nanomaterials: mechanisms, structures and medical applications

• Sepand Tehrani Fateh,
• Lida Moradi,
• Elmira Kohan,
• Michael R. Hamblin and
• Amin Shiralizadeh Dezfuli

Beilstein J. Nanotechnol. 2021, 12, 808–862, doi:10.3762/bjnano.12.64

Nanogenerator-based self-powered sensors for data collection

• Yicheng Shao,
• Maoliang Shen,
• Yuankai Zhou,
• Xin Cui,
• Lijie Li and
• Yan Zhang

Beilstein J. Nanotechnol. 2021, 12, 680–693, doi:10.3762/bjnano.12.54

• limit, the TENG generates AC signals for power supply and analysis of vibration characteristics. When the vibration exceeds a threshold, the output signal becomes a DC signal and an alarm is triggered. To sum up, self-powered sensors based on NGs have great prospects as intelligent traffic sensors, and

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• beam milling that were inspected by transmission electron microscopy (TEM). In this way, the microstructural effect of increasing the helium ion-induced defect density was probed, and threshold doses for a series of structural changes, such as amorphization and subsurface swelling, were established

• many samples can be performed. In fact, at doses below the threshold for nanobubble formation, the introduction of helium atoms into interstitial sites can be used to delicately induce strain into a crystal lattice, which can be leveraged for strain engineering. And at higher doses, localized and

• subsurface voids was indeed also observed [16]. Threshold doses for the formation of a subsurface dislocation band, for the onset of amorphization, and for the formation of nanobubbles and larger voids, were established (as shown earlier in Figure 1c). Tan et al. performed detailed TEM cross-sectional

On the stability of microwave-fabricated SERS substrates – chemical and morphological considerations

• Limin Wang,
• Aisha Adebola Womiloju,
• Christiane Höppener,
• Ulrich S. Schubert and
• Stephanie Hoeppener

Beilstein J. Nanotechnol. 2021, 12, 541–551, doi:10.3762/bjnano.12.44

• multiple watershed functions to derive the projected particle area. For this, the area occupied by the nanoparticles is identified by doing a manual threshold, which creates a binary image. The particles on the edges of the images were excluded for data extraction. Finally, a histogram of the area

A review on nanostructured silver as a basic ingredient in medicine: physicochemical parameters and characterization

• Gabriel M. Misirli,
• Kishore Sridharan and
• Shirley M. P. Abrantes

Beilstein J. Nanotechnol. 2021, 12, 440–461, doi:10.3762/bjnano.12.36

• , hematological, urinary, physical, or morphological findings. Further studies, however, are needed to observe the threshold toxicity in other human organs upon increasing dosage and time exposure to AgNPs [130]. The toxicity of AgNPs has been evaluated in several studies; however, only a few researchers

Differences in surface chemistry of iron oxide nanoparticles result in different routes of internalization

• Barbora Svitkova,
• Vlasta Zavisova,
• Veronika Nemethova,
• Martina Koneracka,
• Miroslava Kretova,
• Filip Razga,
• Monika Ursinyova and
• Alena Gabelova

Beilstein J. Nanotechnol. 2021, 12, 270–281, doi:10.3762/bjnano.12.22

• ) at 630× magnification. Statistical analysis Data are given as mean values ± SD. The differences between control cells and treated cells were evaluated by Student´s t-test and one-way analysis of variance (ANOVA). The threshold of statistical significance was set at p < 0.05. The effect of endocytic

Scanning transmission helium ion microscopy on carbon nanomembranes

• Daniel Emmrich,
• Annalena Wolff,
• Nikolaus Meyerbröker,
• Jörg K. N. Lindner,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2021, 12, 222–231, doi:10.3762/bjnano.12.18

• 60 and 80 keV to rule out possible deviations from the calculation of the attenuation length. Both energies are below the energy threshold for atom displacement in carbon membranes and should not lead to knock-on damage on the membrane [31]. The use of an energy filter reduces the beam energy at the

Toward graphene textiles in wearable eye tracking systems for human–machine interaction

• Ata Jedari Golparvar and
• Murat Kaya Yapici

Beilstein J. Nanotechnol. 2021, 12, 180–189, doi:10.3762/bjnano.12.14

• executes the designated action. For instance, considering the case of a blink, which is attributed to the mouse click or “select” action, at cursor speeds above a maximum threshold, there is the possibility that the user attempts to click and select a specific letter but misses it due to the latency in

A review on the green and sustainable synthesis of silver nanoparticles and one-dimensional silver nanostructures

• Sina Kaabipour and
• Shohreh Hemmati

Beilstein J. Nanotechnol. 2021, 12, 102–136, doi:10.3762/bjnano.12.9

• with threshold limits as small as 10 ppb [242][244]. N,N-Dimethylformamide (DMF) is also known as a strong and common reducing agent. However, the compound is reported to cause damage to the liver and digestive system [245]. Sodium borohydride, another strong reducing agent, is considered to have

Bio-imaging with the helium-ion microscope: A review

• Matthias Schmidt,
• James M. Byrne and
• Ilari J. Maasilta

Beilstein J. Nanotechnol. 2021, 12, 1–23, doi:10.3762/bjnano.12.1

• in the HIM is naturally determined by the size of the beam spot, which has a minimum threshold of 0.25 nm [1]. In reality, achieving such a small spot size is extremely challenging and is affected by the ion landing energy as well as instrument parameters, such as the choice of aperture and source de

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

• Serguei Chiriaev,
• Luciana Tavares,
• Vadzim Adashkevich,
• Arkadiusz J. Goszczak and
• Horst-Günter Rubahn

Beilstein J. Nanotechnol. 2020, 11, 1693–1703, doi:10.3762/bjnano.11.151

• , we assume that the structural transformations in the irradiated PDMS material depend on the mechanical strain induced in the irradiated polymer volume by the compacting process. In this case, the strain accumulates with the irradiation fluence and, at a certain fluence value, it reaches a threshold

• PDMS sample induced by ion irradiation include irreversible changes in the material structure and in the elastic properties with an increase in the irradiation dose [21][22][23][24][25]. These factors can contribute significantly to set the threshold dose for the first strain-driven transition and can

The influence of an interfacial hBN layer on the fluorescence of an organic molecule

• Christine Brülke,
• Oliver Bauer and
• Moritz M. Sokolowski

Beilstein J. Nanotechnol. 2020, 11, 1663–1684, doi:10.3762/bjnano.11.149

• threshold temperature (ca. 280 K). This explains why FLB can only be observed after annealing or deposition at or above this temperature. The energetic difference between FLA and FLB amounts to ca. 150 cm−1. We compare this to the energetic shift reported by Forker et al. who investigated PTCDA on hBN/Rh

Piezoelectric sensor based on graphene-doped PVDF nanofibers for sign language translation

• Shuai Yang,
• Xiaojing Cui,
• Rui Guo,
• Zhiyi Zhang,
• Shengbo Sang and
• Hulin Zhang

Beilstein J. Nanotechnol. 2020, 11, 1655–1662, doi:10.3762/bjnano.11.148

• channel is collected in real time. When the voltage exceeds the threshold, the corresponding Boolean indicator lights up, otherwise the indicator light goes out. Thus, the indicator lights can represent sign language gestures. (a) Schematic diagram of a self-powered PES based on GR-doped PVDF. (b

Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• read DC sweeps was applied. When a post-reset voltage pulse with sufficient amplitude was applied to a given cell, the measured current and the post-pulse resistance increased drastically, indicating that the cell re-amorphized after threshold switching, melting, and quenching. The amorphized length

• was calculated using the measured voltage at which the threshold switching occurred and the expected drifted threshold field at that time. The measured threshold voltage values and, hence, the extracted amorphized length, generally increase linearly with the programmed resistance levels. However

• , significant variability arises from the intrinsically unique crystallization and amorphization processes in these devices. For example, cells programmed to an amorphous resistance of approx. 50 MΩ show threshold voltage values of 5.5–7.5 V, corresponding to amorphized length values of 290–395 nm. This

Selective detection of complex gas mixtures using point contacts: concept, method and tools

• Alexander P. Pospelov,
• Victor I. Belan,
• Dmytro O. Harbuz,
• Volodymyr L. Vakula,
• Lyudmila V. Kamarchuk,
• Yuliya V. Volkova and
• Gennadii V. Kamarchuk

Beilstein J. Nanotechnol. 2020, 11, 1631–1643, doi:10.3762/bjnano.11.146

• procedures involves lowering the sensitivity threshold of the sensor in relation to a wider list of controlled substances and their derivatives. This, in turn, requires a finer and more detailed analysis of the features of the response curve configuration. A reliable tool for the precise differentiation of a

Electrokinetic characterization of synthetic protein nanoparticles

• Daniel F. Quevedo,
• Cody J. Lentz,
• Adriana Coll de Peña,
• Yazmin Hernandez,
• Nahal Habibi,
• Rikako Miki,
• Joerg Lahann and
• Blanca H. Lapizco-Encinas

Beilstein J. Nanotechnol. 2020, 11, 1556–1567, doi:10.3762/bjnano.11.138

• trapped. By setting vp = 0 in Equation 7, the electrokinetic equilibrium condition (EEEC) can be expressed as [25][26]: where Equation 9 is used to estimate the threshold for particle trapping. This particle trapping parameter is a factor of both particle charge and particle size. It can be used to

One-step synthesis of carbon-supported electrocatalysts

• Sebastian Tigges,
• Nicolas Wöhrl,
• Ivan Radev,
• Ulrich Hagemann,
• Markus Heidelmann,
• Thai Binh Nguyen,
• Stanislav Gorelkov,
• Stephan Schulz and
• Axel Lorke

Beilstein J. Nanotechnol. 2020, 11, 1419–1431, doi:10.3762/bjnano.11.126

• threshold value for catalyst corrosion via Pt dissolution of 2 nm reported in the literature [16][34], which is not the case for HiSPEC4000 (mean particle diameter of 4.5 nm). After 10,000 cycles, no significant ECSA value could be measured for any of the catalysts. Furthermore, during the first 500 cycles

Impact of fluorination on interface energetics and growth of pentacene on Ag(111)

• Qi Wang,
• Meng-Ting Chen,
• Antoni Franco-Cañellas,
• Bin Shen,
• Thomas Geiger,
• Holger F. Bettinger,
• Frank Schreiber,
• Ingo Salzmann,
• Alexander Gerlach and
• Steffen Duhm

Beilstein J. Nanotechnol. 2020, 11, 1361–1370, doi:10.3762/bjnano.11.120

• , induction and electrostatic contributions to the solid state polarization, i.e., a mutual compensation of different mechanisms. Our results show that the rationale of “decoupling by fluorination” required a threshold of organic–metal interaction strength, as can be seen by the monolayers of PEN, F4PEN and

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• cm−2 [13][14][15][16][17], as well as good electrical conductivity for up to approx. 1018 ions cm−2 [9][10][18]. Sulfur vacancies (SVs) and the formation of a dislocation–divacancy complex can lead to significant n-doping in MoS2 [19], which shifts the threshold voltage (Vth) of the FET to higher

• spread of a typical focused He+ ion probe is several nanometers, the formation of other defects in the irradiated 2D crystal lattice is also expected [25][26], which may bring about the often-observed negative shifts of the MoS2 FET threshold voltage after ion irradiation. Such n-type doping behavior

• oxide, as the source of donor states in the FET channel [35]. Further studies on flakes decoupled from the substrate need to be performed to clarify the exact origin of the threshold voltage shift in TMDs irradiated at moderate beam energies. The effects of increasing IR are evident from changes to the

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111)

• Maximilian Schaal,
• Takumi Aihara,
• Marco Gruenewald,
• Felix Otto,
• Jari Domke,
• Roman Forker,
• Hiroyuki Yoshida and
• Torsten Fritz

Beilstein J. Nanotechnol. 2020, 11, 1168–1177, doi:10.3762/bjnano.11.101

• accumulates rather uniformly for an increasing amount of deposited molecules on the substrate surface. Beginning at a certain threshold the DRS signal exhibits a noticeable blueshift (Supporting Information File 1, Figure S1), and we use this sudden change for our definition of 1 MLE. This spectral shift as

A new photodetector structure based on graphene nanomeshes: an ab initio study

• Babak Sakkaki,
• Hassan Rasooli Saghai,
• Ghafar Darvish and
• Mehdi Khatir

Beilstein J. Nanotechnol. 2020, 11, 1036–1044, doi:10.3762/bjnano.11.88

• curves of A4Z6-6 and A4Z6-24 GNMs in comparison with a graphene device. The devices made from GNMs exhibit different transport characteristics than GNR and graphene devices. They have threshold voltage and behave like a diode at positive voltages. These effects are attributed to the formation of a

Microwave photon detection by an Al Josephson junction

• Leonid S. Revin,
• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Anton A. Yablokov,
• Igor V. Rakut,
• Victor O. Zbrozhek and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2020, 11, 960–965, doi:10.3762/bjnano.11.80

• value calculated from the gap, is experimentally investigated for application as a threshold detector for microwave photons. We present the preliminary results of measurements of the lifetime of the superconducting state and the probability of switching by a 9 GHz external signal. We found an

• significant improvement of the noise immunity of a device, radically decreasing the dark count rate, but it will also decrease the single-photon sensitivity of the considered threshold detector. Quantization of the switching probability tilt as a function of the signal attenuation for various bias currents

• ]. For the lower-frequency range, a new class of single-microwave-photon detectors is needed. With regard to this, a current-biased Josephson junction (JJ) is of particular interest for applications as a threshold detector since its phase dynamics is altered even by a weak probe field. Rich dynamics of

Comparison of fresh and aged lithium iron phosphate cathodes using a tailored electrochemical strain microscopy technique

• Matthias Simolka,
• Hanno Kaess and
• Kaspar Andreas Friedrich

Beilstein J. Nanotechnol. 2020, 11, 583–596, doi:10.3762/bjnano.11.46

•  8. Figure 7 shows the same sample location as in Figure 5, but Figure 7b and 7e now present relaxation times after a positive dc-voltage pulse and Figure 7c and 7f after the negative dc-voltage pulse. We excluded data points below a certain threshold, since a minimal ESM signal intensity is needed