Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• (≈40 K) and a chamber pressure of 10−12–10−11 Torr. The atom detection efficiency is 57%. For data reconstruction IVAS™ software (version 3.6.6) was used. APT specimen (needle-shaped tips attached onto the apex of a Mo support grid) were structured using an Auriga (Zeiss) focused ion beam scanning

A novel copper precursor for electron beam induced deposition

• Caspar Haverkamp,
• George Sarau,
• Mikhail N. Polyakov,
• Ivo Utke,
• Marcos V. Puydinger dos Santos,
• Silke Christiansen and
• Katja Höflich

Beilstein J. Nanotechnol. 2018, 9, 1220–1227, doi:10.3762/bjnano.9.113

• . Cross-sectional samples from planar deposits for imaging by TEM were prepared by a focused ion beam (FIB) lift-out technique in a Zeiss Crossbeam 340 KMAT. TEM on the cross-sections was performed on a JEOL JEM2200fs CM12. SAED pattern indexing was carried out using CSpot software (CrystOrient

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• [25]. Focused ion beam has been used to prepare lamellae of selected samples for transmission electron microscopy (TEM) analysis (cross and plan view, Fei Tecnai G2) in bright or dark field at a voltage of 200 kV. Plan view images are treated with free software to obtain the crystallite size

• distribution as in [26]. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) investigation of the compositional depth profile of the CeO2/TiN/Si and CeO2/Si structures has been performed by means of a Cs+ ion beam (energy of 0.5 keV, ion current 38.0 nA) sputtering a 200 μm × 200 μm area, and a Ga+ ion

• beam (25 keV, 2.6 pA) for analysis over a 50 μm × 50 μm area centered on the sputtered crater and therein collecting secondary negative ions [27]. The recorded intensities of the secondary ions were normalized to the intensity of 30Si in bulk Si. The chemical state of the annealed CeO2 films [28] was

Single-step process to improve the mechanical properties of carbon nanotube yarn

• Maria Cecilia Evora,
• Xinyi Lu,
• Nitilaksha Hiremath,
• Nam-Goo Kang,
• Kunlun Hong,
• Roberto Uribe,
• Gajanan Bhat and
• Jimmy Mays

Beilstein J. Nanotechnol. 2018, 9, 545–554, doi:10.3762/bjnano.9.52

• ). CNT yarn is cylindrical and the diameter ranges between 50 a 60 µm. The tensile testing of the yarn samples were kept constant in terms of length of 25.4 mm. The morphology of CNT yarns was investigated using a Zeiss Auriga dual beam focused ion beam (FIB) and scanning electron microscope (SEM) in

• which electron and ion beam can be used simultaneously. The FIB is generated from a gallium liquid metal ion source with resolution of 7 nm at 30 keV acceleration voltages. The e-beam is generated from field emission gun electron source with high resolution SEM 1 nm at 15 keV and 1.9 nm at 1 keV

Al₂O₃/TiO₂ inverse opals from electrosprayed self-assembled templates

• Arnau Coll,
• Sandra Bermejo,
• David Hernández and
• Luís Castañer

Beilstein J. Nanotechnol. 2018, 9, 216–223, doi:10.3762/bjnano.9.23

• layers of 360 nm polystyrene nanoparticles can be seen. The layer is almost free of defects besides some missing beads that can be identified in the top surface. A focused ion beam (FIB) drill in two orthogonal vertical planes confirms that the order is fully three-dimensional. The total thickness of the

Bombyx mori silk/titania/gold hybrid materials for photocatalytic water splitting: combining renewable raw materials with clean fuels

• Stefanie Krüger,
• Michael Schwarze,
• Otto Baumann,
• Christina Günter,
• Michael Bruns,
• Christian Kübel,
• Dorothée Vinga Szabó,
• Rafael Meinusch,
• Verónica de Zea Bermudez and
• Andreas Taubert

Beilstein J. Nanotechnol. 2018, 9, 187–204, doi:10.3762/bjnano.9.21

• obtained using a raster scanned Ar+ ion beam at 0.5–3.0 keV and 30° angle of incidence. X-ray powder diffraction (XRD) was performed on a PANalytical Empyrean Diffractometer in a 2θ range of 4–90°. X-ray wavelength was 1.5408 Å (Cu Kα) and step size was 0.0131°. Data and particle size analysis via Scherrer

Response under low-energy electron irradiation of a thin film of a potential copper precursor for focused electron beam induced deposition (FEBID)

• Leo Sala,
• Iwona B. Szymańska,
• Céline Dablemont,
• Anne Lafosse and
• Lionel Amiaud

Beilstein J. Nanotechnol. 2018, 9, 57–65, doi:10.3762/bjnano.9.8

• obtained with non-standard processes, for example with FEBID in aqueous solution [3] or with ion beam assisted deposition with plasma treatments [4]. For purity improvement of copper deposits, an alternative is the use of precursors with multiple copper ions. This class of metallic complex precursors has

Nematic liquid crystal alignment on subwavelength metal gratings

• Irina V. Kasyanova,
• Artur R. Geivandov,
• Vladimir V. Artemov,
• Maxim V. Gorkunov and
• Serguei P. Palto

Beilstein J. Nanotechnol. 2018, 9, 42–47, doi:10.3762/bjnano.9.6

• , which involves the ion-beam milling technique and assembly of the experimental liquid crystal cell. The second section is dedicated to data analysis, where besides polarized microscope observations, we apply the Fourier transform technique to the transmittance spectra in order to extract the effective

• gratings (Figure 1) are produced by ion-beam milling of the films using an FEI Scios dual beam electron-ion microscope (accelerating voltage 30 kV, ion beam current 0.1–0.3 nA). We have produced a series of gratings on the same substrate in order to be able to observe the influence on LC alignment of such

Localized growth of carbon nanotubes via lithographic fabrication of metallic deposits

• Fan Tu,
• Martin Drost,
• Imre Szenti,
• Janos Kiss,
• Zoltan Kónya and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2017, 8, 2592–2605, doi:10.3762/bjnano.8.260

• well-defined configurations for building integrated systems for micro- and nanoelectronics. In this regard, classical methods like optical lithography (OL) [13] and electron beam lithography (EBL) [14], but also focused ion beam (FIB) processing [15], have been successfully applied to fabricate

Interactions of low-energy electrons with the FEBID precursor chromium hexacarbonyl (Cr(CO)₆)

• Jusuf M. Khreis,
• João Ameixa,
• Filipe Ferreira da Silva and
• Stephan Denifl

Beilstein J. Nanotechnol. 2017, 8, 2583–2590, doi:10.3762/bjnano.8.258

• . Experimental Since the used experimental setup was already described in detail elsewhere [27], only a short overview will be given. A double focussing two-sector-field mass spectrometer (VG ZAB2-SEQ) in Nier–Johnson geometry was used. The ion beam was produced in a standard Nier-type ion source. The chromium

Direct writing of gold nanostructures with an electron beam: On the way to pure nanostructures by combining optimized deposition with oxygen-plasma treatment

• Domagoj Belić,
• Mostafa M. Shawrav,
• Emmerich Bertagnolli and
• Heinz D. Wanzenboeck

Beilstein J. Nanotechnol. 2017, 8, 2530–2543, doi:10.3762/bjnano.8.253

• widely utilized [8][9][10] due to the growing number of modern scanning electron microscopes (SEMs) which can be combined with focused ion beam (FIB) systems that are equipped with gas injection systems by default. Rather than being merely characterization instruments, such SEMs are now becoming

Magnetic properties of optimized cobalt nanospheres grown by focused electron beam induced deposition (FEBID) on cantilever tips

• Soraya Sangiao,
• César Magén,
• Darius Mofakhami,
• Grégoire de Loubens and
• José María De Teresa

Beilstein J. Nanotechnol. 2017, 8, 2106–2115, doi:10.3762/bjnano.8.210

• observation in a specific geometry. Firstly, the cantilever pyramid tip is cut by focused ion beam (FIB) milling and lifted-out by a micromanipulator. Then, the cantilever tip is welded onto a TEM copper grid by a FIB-induced Pt deposition, as illustrated in Figure 3a. Then, the FEBID cobalt nanosphere is

Intercalation of Si between MoS₂ layers

• Rik van Bremen,
• Qirong Yao,
• Soumya Banerjee,
• Deniz Cakir,
• Nuri Oncel and
• Harold J. W. Zandvliet

Beilstein J. Nanotechnol. 2017, 8, 1952–1960, doi:10.3762/bjnano.8.196

• , whereas the rest is oxidized. Upon sputtering of the MoS2/Si sample with an Ar ion beam with 1 kV energy, we observe that the relative Si signal increases while the relative S signal decreases as can be seen in Figure S3 in Supporting Information File 1. This observation indicates that Si has intercalated

Group-13 and group-15 doping of germanane

• Nicholas D. Cultrara,
• Maxx Q. Arguilla,
• Shishi Jiang,
• Chuanchuan Sun,
• Michael R. Scudder,
• R. Dominic Ross and
• Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

• measured using X-ray fluorescence on an Olympus X-5000 Mobile XRF System. SEM and EDX were performed using a FEI Helios Nanolab 600 dual beam focussed ion beam/scanning electron microscope. X-ray photoelectron spectroscopy was performed using a Kratos Axis ultra X-ray photoelectron spetrometer with a

Growth, structure and stability of sputter-deposited MoS₂ thin films

• Reinhard Kaindl,
• Bernhard C. Bayer,
• Roland Resel,
• Thomas Müller,
• Viera Skakalova,
• Gerlinde Habler,
• Rainer Abart,
• Alexey S. Cherevan,
• Dominik Eder,
• Maxime Blatter,
• Fabian Fischer,
• Jannik C. Meyer,
• Dmitry K. Polyushkin and
• Wolfgang Waldhauser

Beilstein J. Nanotechnol. 2017, 8, 1115–1126, doi:10.3762/bjnano.8.113

• focussed-ion-beam (FIB) prepared cross-sections of the PVD MoS2 films. According to the fit of the experimental XRR curves (not shown here) the surface roughness (σsurf) is ≈1.2 nm for the RT film and ≈0.6 nm for films deposited at 400 °C. While the σsurf of the RT films is consistent with the AFM results

• incident angle of αi = 0.13° was chosen to enhance the scattered intensities of the adsorbate. The angular scans have been transferred to scattering vector notation using q = 4πsin(Θ)/λxt. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) and focused ion beam (FIB

• the SiO2/Si support were fabricated using focussed ion beam (FIB) sputtering at IB settings of 30 kV accelerating voltage and successively decreasing IB currents from 65 nA to 50 pA. The 90–120 nm thick sample foils were subsequently checked for film thickness accuracy determination in a Philips CM200

Near-field surface plasmon field enhancement induced by rippled surfaces

• Mario D’Acunto,
• Francesco Fuso,
• Ruggero Micheletto,
• Makoto Naruse,
• Francesco Tantussi and
• Maria Allegrini

Beilstein J. Nanotechnol. 2017, 8, 956–967, doi:10.3762/bjnano.8.97

• and height much smaller than the wavelength of typical plasmon resonances. Different top-down or bottom-up fabrication techniques have been introduced to produce metal nanostructures with active plasmonic reactivity [14]. For example, ion beam sputtering (IBS) is a widely employed bottom-up technique

• ion-beam sputtering (IBS) generally show a fractal structure, the function C in Equation 13 is chosen to be Gaussian, that is, a special case of a fractal surface with the Hurst exponent equal to one [47]: where a is known as the transverse autocorrelation length, as it describes the mean length

3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity

• Brett B. Lewis,
• Robert Winkler,
• Xiahan Sang,
• Pushpa R. Pudasaini,
• Michael G. Stanford,
• Harald Plank,
• Raymond R. Unocic,
• Jason D. Fowlkes and
• Philip D. Rack

Beilstein J. Nanotechnol. 2017, 8, 801–812, doi:10.3762/bjnano.8.83

• of 3D growth have been demonstrated [35][36][37][38] beyond simple 1D nanowires, controlled growth of complex geometries using EBID has only recently been achieved based on a combined simulation and computer aided design approach [11]. This approach has also been used with Ga+ ion beam induced

Vapor deposition routes to conformal polymer thin films

• Priya Moni,
• Ahmed Al-Obeidi and
• Karen K. Gleason

Beilstein J. Nanotechnol. 2017, 8, 723–735, doi:10.3762/bjnano.8.76

• that the film–substrate interface can be imaged [27][28]. In Figure 6f, an iCVD coated textile fiber has been ion beam ablated to reveal the conformal polymer film [27]. As substrates become more complex and polymer film thicknesses fall below 100 nm, verifying film conformality becomes increasingly

• difficult. Insufficient Z contrast and charging effects makes SEM cross sections difficult to analyze. Using a focus ion beam (FIB) system to make transmission electron microscopy (TEM) samples is a route often used with inorganic materials. However, ion damage, particularly for very thin films, is an issue

• ], copyright 2011 American Chemical Society. SEM images of iCVD pEGDA on micro-trenches with aspect ratios of a) 1.4 b) 3.5, c) 5.5 and d) 8.4. e) Cross-sectional SEM of 25 µm stainless-steel wire with 16 µm fluoropolymer coating formed via iCVD. f) iCVD pDMAMS on nylon fiber ion beam ablated to reveal

Ion beam profiling from the interaction with a freestanding 2D layer

• Ivan Shorubalko,
• Kyoungjun Choi,
• Michael Stiefel and
• Hyung Gyu Park

Beilstein J. Nanotechnol. 2017, 8, 682–687, doi:10.3762/bjnano.8.73

• , Department of Mechanical and Process Engineering, Eidgenössische Technische Hochschule (ETH) Zürich, Tannenstrasse 3, CH-8092 Zürich, Switzerland 10.3762/bjnano.8.73 Abstract Recent years have seen a great potential of the focused ion beam (FIB) technology for the nanometer-scale patterning of a

• resultant pore diameter. In return, the pore dimension as a function of the exposure dose brings out the ion beam profiles. Using this method of determining an ion-beam point spread function, we verify a Gaussian profile of focused gallium ion beams. Graphene sputtering yield is extracted from the

• source. Our method of profiling ion beams with 2D-layer perforation provides more information on ion beam profiles than the conventional sharp-edge scan method does. Keywords: exposure dose; focused ion beam; freestanding 2D layer; graphene; ion beam diameter; ion beam point spread function

Flexible photonic crystal membranes with nanoparticle high refractive index layers

• Torben Karrock,
• Moritz Paulsen and
• Martina Gerken

Beilstein J. Nanotechnol. 2017, 8, 203–209, doi:10.3762/bjnano.8.22

• (SEM). The cross-section was created with a focused ion beam (FIB). To protect the cutting edge, a layer of platinum was added on top of the sample. The structure itself is emphasized because of charging effects at the PDMS material border. For optical enhancement dotted guiding lines were drawn into

Grazing-incidence optical magnetic recording with super-resolution

• Gunther Scheunert,
• Sidney. R. Cohen,
• René Kullock,
• Ryan McCarron,
• Katya Rechev,
• Ifat Kaplan-Ashiri,
• Ora Bitton,
• Paul Dawson,
• Bert Hecht and
• Dan Oron

Beilstein J. Nanotechnol. 2017, 8, 28–37, doi:10.3762/bjnano.8.4

• -fields antiparallel to the DC field, and thus created a more manageable background. Transmission electron microscopy (TEM) cross-sectional imaging was done on a sample lamella prepared via focused ion beam (FIB) of one of the Seagate platters to identify the thin-film layer structure used for modelling

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• and Solar Energy, Southern Scientific Center of Russian Academy of Sciences, 344006, 41, Chekhov Avenue, Rostov-on-Don, Russia 10.3762/bjnano.8.2 Abstract The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that

• barrier layer increases the intensity of photoluminescence peaks of the ground state and the first excited state of the InAs quantum dots. Keywords: 3D growth; doping; ion-beam sputtering; photoluminescence; quantum dots; Introduction Main interests of inorganic nanotechnology science are the study of

• epitaxy [8] and vapour phase epitaxy [9] are commonly used and well-understood techniques for obtaining such nanostructures. Besides the mentioned methods, classic growth methods such as liquid phase epitaxy [10], laser beam sputtering [11], electron beam sputtering [12] and ion beam sputtering [13] are

Annealing-induced recovery of indents in thin Au(Fe) bilayer films

• Anna Kosinova,
• Ruth Schwaiger,
• Leonid Klinger and
• Eugen Rabkin

Beilstein J. Nanotechnol. 2016, 7, 2088–2099, doi:10.3762/bjnano.7.199

• ) on the Au (111) reflection. Cross-section samples were prepared in a dual-beam focused ion beam microscope (FIB; FEI Strata 400-S). Appendix Topography evolution of an axisymmetrical indent by surface diffusion (small slope approximation) To check whether surface diffusion alone can lead to indent

Fundamental properties of high-quality carbon nanofoam: from low to high density

• Natalie Frese,
• Shelby Taylor Mitchell,
• Christof Neumann,
• Amanda Bowers,
• Armin Gölzhäuser and
• Klaus Sattler

Beilstein J. Nanotechnol. 2016, 7, 2065–2073, doi:10.3762/bjnano.7.197

• under investigation using an electro-optical lens system. The image is then provided either by ionoluminescence [26], Rutherford backscattering of the ions [27], or secondary electron emission [28]. The high resolution is given by the small subsurface ion beam spread [29]. The instrument is suitable for

Nanostructured SnO₂–ZnO composite gas sensors for selective detection of carbon monoxide

• Paul Chesler,
• Cristian Hornoiu,
• Susana Mihaiu,
• Cristina Vladut,
• Jose Maria Calderon Moreno,
• Mihai Anastasescu,
• Carmen Moldovan,
• Bogdan Firtat,
• Costin Brasoveanu,
• George Muscalu,
• Ion Stan and
• Mariuca Gartner

Beilstein J. Nanotechnol. 2016, 7, 2045–2056, doi:10.3762/bjnano.7.195

• ]. However, the addition of another oxide component described in these papers involves complicated and expensive vapor preparation techniques (e.g., chemical vapor deposition (CVD) or physical vapor deposition (PVD), ion-beam or laser-assisted techniques, spray pyrolysis), expensive dedicated equipment (e.g