Biomimetic chitosan with biocomposite nanomaterials for bone tissue repair and regeneration

• Se-Kwon Kim,
• Sesha Subramanian Murugan,
• Pandurang Appana Dalavi,
• Sebanti Gupta,
• Sukumaran Anil,
• Gi Hun Seong and
• Jayachandran Venkatesan

Beilstein J. Nanotechnol. 2022, 13, 1051–1067, doi:10.3762/bjnano.13.92

• computed tomography (CT) scan radiographs which show good bone lodging in all implants. There are noticeable holes at the hydroxyapatite implant interface. Ag–Si hydroxyapatite implants, on the other hand, have a smooth contact between the host bone and the implant. Acemannan and chitosan coatings have

Effects of focused electron beam irradiation parameters on direct nanostructure formation on Ag surfaces

• Jānis Sniķeris,
• Vjačeslavs Gerbreders,
• Andrejs Bulanovs and
• Ēriks Sļedevskis

Beilstein J. Nanotechnol. 2022, 13, 1004–1010, doi:10.3762/bjnano.13.87

• parameters (beam current, focusing, angle of incidence, and amount of hydrocarbons) affects the growth of nanostructures on Ag surfaces undergoing irradiation by focused EB in point mode. Experimental The samples were prepared by sputtering 500 nm thick Ag layers on Si(111) substrates via direct current (DC

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2022, 13, 986–1003, doi:10.3762/bjnano.13.86

• van der Waals and Coulombic interactions in the energy calculation, resulting in a sum of partial energies [38]. The ReaxFF force field was developed by van Duin et al. [34] for the Si–C–O–H system, and for all simulations described in this paper, ReaxFFSiOCH(2019) is used. To reproduce the

• interaction between argon ions and silicon, hydrogen, and oxygen atoms, we used DFT to simulate the potential energy between each of these pairs: Ar–Ar, Ar–Si, Ar–H, and Ar–O. Once extracted, the potential energy was fitted using the Morse potential which is described in Equation 1: where r represents the

• scheme with a threshold of 10−6 eV/atom. The force threshold for the conjugate gradient geometry optimisation is set to 10−4 eV/Å. The interatomic interactions are calculated by changing the distance between Ar and H and between O and Si atoms by 0.1–12.0 Å in 0.1 Å steps in a simulation box of 25 × 10

Design of a biomimetic, small-scale artificial leaf surface for the study of environmental interactions

• Miriam Anna Huth,
• Axel Huth,
• Lukas Schreiber and
• Kerstin Koch

Beilstein J. Nanotechnol. 2022, 13, 944–957, doi:10.3762/bjnano.13.83

• the water drops are not on the structures but sink in between them, resulting in Wenzel wetting [33]. On microstructured Si wafers, it could be shown that, depending on the height and the distance of the supporting columns of the surface, a transition from Cassie wetting to Wenzel wetting takes place

DNA aptamer selection and construction of an aptasensor based on graphene FETs for Zika virus NS1 protein detection

• Nathalie B. F. Almeida,
• Thiago A. S. L. Sousa,
• Viviane C. F. Santos,
• Camila M. S. Lacerda,
• Thais G. Silva,
• Rafaella F. Q. Grenfell,
• Flavio Plentz and
• Antero S. R. Andrade

Beilstein J. Nanotechnol. 2022, 13, 873–881, doi:10.3762/bjnano.13.78

• characterization utilizing field-effect transistors fabricated using single-layer graphene grown by chemical vapor deposition (CVD) and transferred to Si/SiO2 substrates. The wafers were purchased from Graphene Platform and we produced graphene transistors by conventional photolithography, following the procedures

Temperature and chemical effects on the interfacial energy between a Ga–In–Sn eutectic liquid alloy and nanoscopic asperities

• Yujin Han,
• Pierre-Marie Thebault,
• Corentin Audes,
• Xuelin Wang,
• Haiwoong Park,
• Jian-Zhong Jiang and
• Arnaud Caron

Beilstein J. Nanotechnol. 2022, 13, 817–827, doi:10.3762/bjnano.13.72

• atomic force microscopy (AFM) tips of different chemistries as a function of the temperature (T = 21–90 °C) by AFM force spectroscopy using an XE100 AFM equipped with a heating stage (manufactured by Park Instruments, Republic of Korea). We recorded force–distance curves with PtSi-coated Si cantilevers

• (PtSi-cont, manufactured from NanoSensors, Switzerland), SiOx cantilevers (Contsc, manufactured from NanoSensors, Switzerland), and Au-coated Si cantilevers (ContscAu, manufactured from NanoSensors, Switzerland). Before measurements, the sensitivity of the AFM photodiode was calibrated by recording a

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• ., Cu or Ni) to the desired target substrate (e.g., SiO2/Si, glass, or flexible polymers) often introduces inconsistencies among devices [10]. Various approaches have been developed to address this issue and establish a reproducible transfer process [11][12][13][14][15][16][17]. Among the many, the poly

• up with a target substrate (SiO2/Si wafer). The sample was dried in a vacuum chamber (ca. 10−4 Torr) at room temperature for 2 h. For PMMA removal, the entire sample was vertically dipped into an acetone bath for 4 h. After that, the exposed graphene on a SiO2/Si substrate was again vertically dipped

• synthesized graphene domains easy to be observed in an optical microscope equipped with a CCD camera (Supporting Information File 1, Figure S1a). Raman spectroscopy Large-area graphene films and single graphene crystals transferred onto SiO2/Si substrates were characterized by Raman microscopy (WITec GmbH

Efficient liquid exfoliation of KP₁₅ nanowires aided by Hansen's empirical theory

• Zhaoxuan Huang,
• Zhikang Jiang,
• Nan Tian,
• Disheng Yao,
• Fei Long,
• Yanhan Yang and
• Danmin Liu

Beilstein J. Nanotechnol. 2022, 13, 788–795, doi:10.3762/bjnano.13.69

• . For the Raman tests, KP15 samples were spun on SiO2(300 nm)/Si substrates. The excitation wavelength used was 532 nm, the spot size was approx. 1 μm, and the laser power was kept below 20 μW. For low-temperature Raman measurements, a Linkam THMS600 cryostat cooled by liquid nitrogen was used to

• control the temperature. To prevent sample drift, SiO2 (300 nm)/Si substrates with tested KP15 samples were attached by fixtures to the Linkam THMS600 cryostat. Results and Discussion KP15 bulks, prepared by the gas-phase-transfer method, had a flat and smooth surface shown in Figure 1a. The X-ray

Direct measurement of surface photovoltage by AC bias Kelvin probe force microscopy

• Masato Miyazaki,
• Yasuhiro Sugawara and
• Yan Jun Li

Beilstein J. Nanotechnol. 2022, 13, 712–720, doi:10.3762/bjnano.13.63

• was arranged in front of a photodetector of the OBD system to suppress the influence of the UV light on the deflection sensor. We used a commercial Ir-coated Si cantilever (NANOSENSORS, SD-T7L100) with a resonant frequency f0 of 913 kHz, a spring constant k of 650 N/m, and a quality factor Q of 7748

Experimental and theoretical study of field-dependent spin splitting at ferromagnetic insulator–superconductor interfaces

• Peter Machon,
• Michael J. Wolf,
• Detlef Beckmann and
• Wolfgang Belzig

Beilstein J. Nanotechnol. 2022, 13, 682–688, doi:10.3762/bjnano.13.60

• a Si(111) substrate heated to 800 °C. In a second fabrication step, aluminium/aluminium oxide/copper tunnel junctions were fabricated on the EuS film using e-beam lithography and shadow evaporation. The nominal aluminium film thickness was d = 10 nm. The differential conductance g = dI/dV of the

Sodium doping in brookite TiO₂ enhances its photocatalytic activity

• Boxiang Zhuang,
• Honglong Shi,
• Honglei Zhang and
• Zeqian Zhang

Beilstein J. Nanotechnol. 2022, 13, 599–609, doi:10.3762/bjnano.13.52

• ). (1) Brookite—platy grains. Energy-dispersive X-ray spectroscopy (EDX) results of platy grains (Figure 4b) indicate that Na can be well identified besides Ti and O (note that the characteristic peak of C comes from the carbon conducting resin, Al from the sample holder, and Si from the silicon wafer

Revealing local structural properties of an atomically thin MoSe₂ surface using optical microscopy

• Lin Pan,
• Peng Miao,
• Anke Horneber,
• Alfred J. Meixner,
• Pierre-Michel Adam and
• Dai Zhang

Beilstein J. Nanotechnol. 2022, 13, 572–581, doi:10.3762/bjnano.13.49

• local structural properties on the Raman enhancement at 2D-TMDC monolayer surfaces. Results In this work, triangular MoSe2 flakes were chemically synthesized on a precleaned Si substrate coated with a thermally grown layer of SiO2. To investigate the Raman enhancement effect on a MoSe2 flake, we choose

• in Figure 1b are high-resolution AFM images of CuPc/MoSe2. The upper inset exhibits a step from the SiO2/Si substrate to the border of the MoSe2 flake, and the lower inset shows a distinct transition from the border to the center of the MoSe2 flake. The MoSe2 flake is fully covered by CuPc molecule

• aggregations, while on the SiO2/Si substrate some CuPc molecules aggregated to a rod-like particle, which has been also reported in the literature [24]. The height profile marked by the dashed white line in Figure 1b is visualized in Figure 1c. It suggests that the center of the MoSe2 flake is slightly thinner

Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• . Electrode materials include diamond, SiC, Si, and Ge. Table 3 summarizes nanowire materials commonly used for NEM switches. The research on NWs-NEM switches can be classified into two types, namely manufacturing techniques and in situ techniques. In the former, the switches are first processed by top-down

• with a switching ratio of about 103. Qian et al. [37] produced a U-shaped NEM switch with two Si nanowires, which support a square capacitive plate to form a U-shaped removable electrode, as shown in Figure 5b. The length of the silicon nanowires is 5 µm, the cross section is 90 × 90 nm square, the

• lateral gap is 2 µm, the gap between the electrode and the substrate is 145 nm, and the voltage is 1.12 V. However, the critical voltage fluctuation range is 1 V, and only five life cycles were achieved. Boodhoo et al. [38] used heavily doped Si NWs that were 1800 nm long, 42 nm wide and 50 nm thick, with

A broadband detector based on series YBCO grain boundary Josephson junctions

• Egor I. Glushkov,
• Alexander V. Chiginev,
• Leonid S. Kuzmin and
• Leonid S. Revin

Beilstein J. Nanotechnol. 2022, 13, 325–333, doi:10.3762/bjnano.13.27

• , respectively [36][37]. For a Josephson junction having a non-hysteretic IVC, the output voltage spectrum at a fixed bias current is defined as [38]: where Rd is the differential resistance; and depend on the nature of the junction barrier. For the considered structures, SI = 10−12 was chosen as a typical

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• requirements of the different characterization methods, thin gradient layers were deposited on silicon (Si), amorphous silica (SiO2) and conductive metallic substrates (Ti6Al4V). The resulting thickness of the prepared thin films was about 610 nm as measured using a Talysurf optical profiler (Tylor Hobson CCI

• film: a) Cu 2p, b) Ti 2p, and c) O 1s core levels. (a) Photoelectron spectrum of the valence band, (b) schematic energy diagram of the surface of the (Ti0.48Cu0.52)Ox thin film. Results of TEM analysis and distribution of Cu, Ti, O, and Si in the gradient (Ti–Cu)Ox thin film with correlation to U

Relationship between corrosion and nanoscale friction on a metallic glass

• Haoran Ma and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2022, 13, 236–244, doi:10.3762/bjnano.13.18

• corrosive solution was added. For these experiments, we used an electrochemical atomic force microscope (ECAFM, Agilent 5500) and the oxidized tip (radius of ca. 30 nm) of a single-crystalline Si cantilever (PPP-CONT, NanoSensors, Germany). We adopted the beam geometry method to calibrate the force

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

• Max Mennicken,
• Sophia Katharina Peter,
• Corinna Kaulen,
• Ulrich Simon and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2022, 13, 219–229, doi:10.3762/bjnano.13.16

• German Research Foundation (DFG Si 609/16-1, Ka 1819/7-1)).

Engineered titania nanomaterials in advanced clinical applications

• Padmavati Sahare,
• Paulina Govea Alvarez,
• Juan Manual Sanchez Yanez,
• Gabriel Luna-Bárcenas,
• Samik Chakraborty,
• Sujay Paul and
• Miriam Estevez

Beilstein J. Nanotechnol. 2022, 13, 201–218, doi:10.3762/bjnano.13.15

• regenerative medicine because of the utilization of the endogenous stem cells of the host or tissue-specific progenitor cells at the injury site. Akermanite is a bioceramic that has received significant attention because, after implantation, it can release Ca, Si, and Mg ions, which enhances adhesion

Low-energy electron interaction and focused electron beam-induced deposition of molybdenum hexacarbonyl (Mo(CO)₆)

• Po-Yuan Shih,
• Maicol Cipriani,
• Christian Felix Hermanns,
• Jens Oster,
• Klaus Edinger,
• Armin Gölzhäuser and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2022, 13, 182–191, doi:10.3762/bjnano.13.13

• with an integrated Oxford EDX detector. The elemental composition of Mo(CO)6 FEBID deposits obtained by EDX measurement is shown in Table 3. Figure 4 shows the corresponding EDX spectrum along with the SEM image of the deposit. Traces of the EDX signal are discernable from the Au and Si components of

Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

• Hiroya Tanaka,
• Shinya Ohno,
• Kazushi Miki and
• Masatoshi Tanaka

Beilstein J. Nanotechnol. 2022, 13, 172–181, doi:10.3762/bjnano.13.12

• Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan 10.3762/bjnano.13.12 Abstract Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three

• oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etching occur. A precise temperature–pressure growth mode diagram was obtained via careful measurements for Si(113), and the results were compared with those for Si(111) in the present work and Si(001) in

• the literature. Initial oxidation processes were identified based on high-resolution STM images. Keywords: high-index Si surface; in situ measurement; oxidation; scanning tunneling microscopy (STM); Introduction High-index silicon surfaces have drawn considerable interest for their usefulness in

Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe film

• Rahil Hosseinifar,
• Evangelos Golias,
• Ivar Kumberg,
• Quentin Guillet,
• Karl Frischmuth,
• Sangeeta Thakur,
• Mario Fix,
• Manfred Albrecht,
• Florian Kronast and
• Wolfgang Kuch

Beilstein J. Nanotechnol. 2022, 13, 74–81, doi:10.3762/bjnano.13.5

• thickness, deposited at room temperature using magnetron sputtering (base pressure <10−8 mbar) from elemental targets. The Ar sputter pressure was kept constant at 3.5 × 10−3 mbar during the deposition process. The film was prepared with 5 nm Pt as a seed layer on a Si(100) substrate with a 100 nm thick

• (100 nm)/Si(100). Magnetic properties were characterized by superconducting quantum interference device vibrating sample magnetometry, which confirmed an out-of-plane easy axis of magnetization with rectangular hysteresis loops and a coercivity of about 5 mT at room temperature, see Supporting

Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

Nonmonotonous temperature dependence of Shapiro steps in YBCO grain boundary junctions

• Leonid S. Revin,
• Dmitriy V. Masterov,
• Alexey E. Parafin,
• Sergey A. Pavlov and
• Andrey L. Pankratov

Beilstein J. Nanotechnol. 2021, 12, 1279–1285, doi:10.3762/bjnano.12.95

• analysis of the transport properties, the best structure was selected and located at the center of a Si lens for efficient detection. The sample was mounted into a dry cryostat allowing for measurements in a wide temperature range from helium temperatures to ≈80 K. An external gigahertz signal was fed

Morphology-driven gas sensing by fabricated fractals: A review

• Vishal Kamathe and
• Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

• study, Kante et al. prepared SnO2 films with fractal morphology by an electrochemical method with a subsequent oxidation process [68]. Both groups tested the films for CO gas sensing at different temperatures. Figure 8a–d shows the SEM images of SnO2 thin films on a Si(100) substrate obtained by Chen

• the sensor, while Figure 12d shows individual EDS maps of Si, Pt, O, and Ti. The fabricated sensor displayed good sensitivity towards acetone under exposure to UV light with a detection limit greater than 97% at 10 ppb. The exceptional sensitivity achieved was attributed to high porosity, network

• -assisted chemical etching was used by Qin et al. [79] to prepare a dendritic array of Si/WO3 NW composites, which was tested for the detection of NO2 gas at room temperature. Figure 17a–e SEM and high-resolution transmission electron microscopy (HR-TEM) images of Si/WO3 NWs. Figure 17f shows the XRD

Irradiation-driven molecular dynamics simulation of the FEBID process for Pt(PF₃)₄

• Alexey Prosvetov,
• Alexey V. Verkhovtsev,
• Gennady Sushko and
• Andrey V. Solov’yov

Beilstein J. Nanotechnol. 2021, 12, 1151–1172, doi:10.3762/bjnano.12.86

• substrate The first step of the FEBID simulation procedure shown in Figure 1 concerns the specification of a precursor molecule and a substrate. The selection of the system components is usually linked to available experiments. Common experimentally used substrate materials are, for example, SiO2, Si, Au