Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation. Keywords: chemical vapour deposition; field-effect transistor; oligosilanes; radiation-induced nanostructures; silicon

• of dopant intentionally to the Au catalyst particle [22]. Much more common and effective is to add a gaseous dopant, such as PH3, B2H6 or B(CH3)3, to the precursor gas feed during growth. Thus, for example, p–i–n+-type doped Si-NW heterostructures with a resistivity of a few mΩ·cm have been achieved

• decomposition of the precursor and therefore increases the growth rate. With PCl3 as the dopant, at least 800 °C, 20 sccm H2, and a 2 nm layer of Au were needed to produce epitaxial NWs in considerable quantity. For a more detailed view of the morphology of the intrinsic and doped Si-NWs we performed HRTEM

X-ray absorption spectroscopy by full-field X-ray microscopy of a thin graphite flake: Imaging and electronic structure via the carbon K-edge

• Carla Bittencourt,
• Adam P. Hitchock,
• Xiaoxing Ke,
• Gustaaf Van Tendeloo,
• Chris P. Ewels and
• Peter Guttmann

Beilstein J. Nanotechnol. 2012, 3, 345–350, doi:10.3762/bjnano.3.39

• . The peak at 284.2 eV, very clear in the spectrum of the flat part of the graphene, also exists at about the same intensity relative to the C 1s continuum intensity, in the spectrum of the fold. Schultz et al. [12] assigned this pre-edge structure to dopant-induced states. As we did not observe this in

Effect of the tip state during qPlus noncontact atomic force microscopy of Si(100) at 5 K: Probing the probe

• Adam Sweetman,
• Sam Jarvis,
• Rosanna Danza and
• Philip Moriarty

Beilstein J. Nanotechnol. 2012, 3, 25–32, doi:10.3762/bjnano.3.3

• atomic diameter per scan), and therefore drift is not an issue in the assignment of atomic position. This assignment is confirmed by analysis of other images with similar contrast in which the presence of dopant-related defects [22][28] allows unambiguous identification of true contrast inversion

Magnetic nanoparticles for biomedical NMR-based diagnostics

• Huilin Shao,
• Tae-Jong Yoon,
• Monty Liong,
• Ralph Weissleder and
• Hakho Lee

Beilstein J. Nanotechnol. 2010, 1, 142–154, doi:10.3762/bjnano.1.17

• highest magnetization and r2 value, on account of their electron spin configurations, followed by FeFe2O4, CoFe2O4, and NiFe2O4. More recently, it has been demonstrated that magnetization can be further enhanced via additional Zn2+ dopant control in MnFe2O4 nanoparticles [46]. In addition, nanoparticle