Raman study of flash-lamp annealed aqueous Cu₂ZnSnS₄ nanocrystals

• Yevhenii Havryliuk,
• Oleksandr Selyshchev,
• Mykhailo Valakh,
• Alexandra Raevskaya,
• Oleksandr Stroyuk,
• Constance Schmidt,
• Volodymyr Dzhagan and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2019, 10, 222–227, doi:10.3762/bjnano.10.20

• Yevhenii Havryliuk Oleksandr Selyshchev Mykhailo Valakh Alexandra Raevskaya Oleksandr Stroyuk Constance Schmidt Volodymyr Dzhagan Dietrich R. T. Zahn V. E. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, Kyiv, 03028, Ukraine Semiconductor Physics, Chemnitz

Sputtering of silicon nanopowders by an argon cluster ion beam

• Xiaomei Zeng,
• Vasiliy Pelenovich,
• Zhenguo Wang,
• Wenbin Zuo,
• Sergey Belykh,
• Alexander Tolstogouzov,
• Dejun Fu and
• Xiangheng Xiao

Beilstein J. Nanotechnol. 2019, 10, 135–143, doi:10.3762/bjnano.10.13

• surface morphology, with preferable erosion of hills as compared with valleys [6], which also results in the smoothing of the surface [7]. Sputtering by an argon cluster beam has been studied for many pure metals (Cu, Ag, Au, W, Pt, Ni) and their alloys, semiconductors (Si and SiC), and insulators (SiO2

Surface plasmon resonance enhancement of photoluminescence intensity and bioimaging application of gold nanorod@CdSe/ZnS quantum dots

• Siyi Hu,
• Yu Ren,
• Yue Wang,
• Jinhua Li,
• Junle Qu,
• Liwei Liu,
• Hanbin Ma and
• Yuguo Tang

Beilstein J. Nanotechnol. 2019, 10, 22–31, doi:10.3762/bjnano.10.3

• formed with metals and semiconductors, i.e., plasmonic, composite QD nanostructures, provides another efficient way to tune the unique optical properties. In the past decades, much attention has been given to the development of metal-enhanced optical properties. Some researchers have noted that certain

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

• Florian Dumitrache,
• Iuliana P. Morjan,
• Elena Dutu,
• Ion Morjan,
• Claudiu Teodor Fleaca,
• Monica Scarisoreanu,
• Alina Ilie,
• Marius Dumitru,
• Cristian Mihailescu,
• Adriana Smarandache and
• Gabriel Prodan

Beilstein J. Nanotechnol. 2019, 10, 9–21, doi:10.3762/bjnano.10.2

• (3.6 eV). This may be attributed to the impurity clustering which occurs in heavily doped semiconductors. Also, the carbon presence in all (including the reference without F and Zn) of our laser-synthesized tin-oxide-based nanopowders can also influence the optical properties, including the bandgap

Investigation of CVD graphene as-grown on Cu foil using simultaneous scanning tunneling/atomic force microscopy

• Majid Fazeli Jadidi,
• Umut Kamber,
• Oğuzhan Gürlü and
• H. Özgür Özer

Beilstein J. Nanotechnol. 2018, 9, 2953–2959, doi:10.3762/bjnano.9.274

• interactions with a larger range. When we compare the range of interactions in the tunnel current and force measurements, we see a different situation to that reported on other surfaces in previous studies. Based on previous works on semiconductors such as Si(111) and Si(100), the onset of tunnel current is

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• the two parameters, time and temperature, into one quantity – the thermal budget (TB) in units of cm2, based on a formalism used to describe the diffusion of dopants in semiconductors [29]. We calculate from the annealing temperature T and the annealing time t. The other parameters and constants are

Graphene-enhanced metal oxide gas sensors at room temperature: a review

• Dongjin Sun,
• Yifan Luo,
• Marc Debliquy and
• Chao Zhang

Beilstein J. Nanotechnol. 2018, 9, 2832–2844, doi:10.3762/bjnano.9.264

• semiconductors (MOS) are widely used as materials for gas sensing. Usually, MOS gas sensors have some common shortages, such as relatively poor selectivity and high operating temperature. Graphene has drawn much attention as a gas sensing material in recent years because it can even work at room temperature

• , which reduces power consumption. However, the low sensitivity and long recovery time of the graphene-based sensors limit its further development. The combination of metal-oxide semiconductors and graphene may significantly improve the sensing performance, especially the selectivity and response/recovery

• achieved at all [19][20]. Metal-oxide semiconductors (MOS), including tin oxide (SnO2), titanium dioxide (TiO2), zinc oxide (ZnO), copper oxide (CuO), tungsten oxide (WO3), indium oxide (In2O3), ferric oxide (Fe2O3) and cobalt oxide (Co3O4) are important materials for gas sensors [21][22][23][24][25][26

Biomimetic surface structures in steel fabricated with femtosecond laser pulses: influence of laser rescanning on morphology and wettability

• Camilo Florian Baron,
• Alexandros Mimidis,
• Daniel Puerto,
• Evangelos Skoulas,
• Emmanuel Stratakis,
• Javier Solis and
• Jan Siegel

Beilstein J. Nanotechnol. 2018, 9, 2802–2812, doi:10.3762/bjnano.9.262

• superhydrophobic states. Results and Discussion Ripples, grooves and spikes formed by single laser scanning The formation of LIPSSs occurs when a certain number of laser pulses has accumulated in a given area in a single laser scan. For metals and semiconductors, three well-differentiated structures, ripples

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• . It is shown that isovalent doping of GaAs potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV. Keywords: infrared photodetectors; ion-beam deposition; nanoheterostructures; photoluminescence; quantum dot; semiconductors

Near-infrared light harvesting of upconverting NaYF₄:Yb³⁺/Er³⁺-based amorphous silicon solar cells investigated by an optical filter

• Daiming Liu,
• Qingkang Wang and
• Qing Wang

Beilstein J. Nanotechnol. 2018, 9, 2788–2793, doi:10.3762/bjnano.9.260

• above-bandgap visible light. The photons generated during upconversion are then absorbed by photoactive semiconductors to generate electron–hole pairs. This means that UC can broaden the absorption spectrum and enhance the photoelectric conversion efficiency of solar cells. Based on a detailed balance

Contactless photomagnetoelectric investigations of 2D semiconductors

• Marian Nowak,
• Marcin Jesionek,
• Barbara Solecka,
• Piotr Szperlich,
• Piotr Duka and
• Anna Starczewska

Beilstein J. Nanotechnol. 2018, 9, 2741–2749, doi:10.3762/bjnano.9.256

• importance. Results: Here we show a contactless method for determining these parameters in 2D semiconductors that is based on the photomagnetoelectric (PME) effect (also known as the photoelectromagnetic effect). We present calculated dependences of the PME magnetic moment, evoked in 2D Corbino configuration

• method for determining these parameters in 2D semiconductors that is based on the photomagnetoelectric (PME) effect [10]. There are a few phenomena which are or may be called PME effects. For example, in semiconductors the simultaneous action of light and magnetic field evokes specific electromotive

• -illuminated bulk semiconductors in Faraday geometry (Figure 1). In a sample illuminated by a circular spot of light, excess carriers generated by photons of appropriate energy diffuse in all directions. If this happens in a magnetic field perpendicular to the sample surface, diffusing carriers are deflected

Two-dimensional semiconductors pave the way towards dopant-based quantum computing

• José Carlos Abadillo-Uriel,
• Belita Koiller and
• María José Calderón

Beilstein J. Nanotechnol. 2018, 9, 2668–2673, doi:10.3762/bjnano.9.249

• 21941-972, Brazil 10.3762/bjnano.9.249 Abstract Since the proposal in 1998 to build a quantum computer using dopants in silicon as qubits, much progress has been made in the nanofabrication of semiconductors and the control of charge and spins in single dopants. However, an important problem remains

• Defects are a crucial concept in semiconductor technology as they provide proper carriers to intrinsically insulating semiconductors. Dopants constitute the basis for transistor operations. The miniaturisation of these devices has moved defects to the forefront of research, as their number and location

• exchange and tunnel couplings are predicted in this case. The family of 2D materials comprises an increasing number of elemental and compound semiconductors [21][22][23]. Many have been experimentally isolated already, as research activity in this area raises. In the case of non-metallic behavior, their

Impact of the anodization time on the photocatalytic activity of TiO₂ nanotubes

• Jesús A. Díaz-Real,
• Geyla C. Dubed-Bandomo,
• Juan Galindo-de-la-Rosa,
• Luis G. Arriaga,
• Janet Ledesma-García and
• Nicolas Alonso-Vante

Beilstein J. Nanotechnol. 2018, 9, 2628–2643, doi:10.3762/bjnano.9.244

• shift not only displaces the maximum value of IPCE associated to a wavelength (λmax), but also to the absorption edge toward longer wavelengths [66]. This effect has also been observed for semiconductors where the crystalline structure has been changed by chemical doping. Other authors have reported an

• dielectric constant of the material. From the CV curves, an increase in the capacitive current was observed towards lower potential values, which is typical for a transition to the accumulation region of n-type semiconductors. The calculated values for Eg and ND are summarized in Table 3, and compared to the

• explained by a Langmuir–Hinshelwood model [86]. The oxidation mechanism for organic compounds with irradiated semiconductors has been proposed to proceed via photogenerated holes at the surface of the electrode [87][88]. The cyclic voltammograms of TNTs with ta = 0.5 h (Figure S4, Supporting Information

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• oxygen vacancies in the bulk of the IGZO for the enhancement of electrical properties and stress stability of the TFTs, the following two aspects should be mainly considered: (i) oxidizing the densities of the defect state of oxide semiconductors to suppress charge trapping, for example by oxygen

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• ; nanostructured materials; thin films; Introduction Diluted magnetic semiconductors (DMS) are very promising materials for spintronic devices, because DMS offer the combination of magnetic and semiconducting properties. Currently, the most commonly studied DMS systems are those based on III–V semiconductors

Performance analysis of rigorous coupled-wave analysis and its integration in a coupled modeling approach for optical simulation of complete heterojunction silicon solar cells

• Ziga Lokar,
• Benjamin Lipovsek,
• Marko Topic and
• Janez Krc

Beilstein J. Nanotechnol. 2018, 9, 2315–2329, doi:10.3762/bjnano.9.216

• refraction). The latter is especially important in solar cells where indirect semiconductors such as silicon (Si) are used as an absorber layer, where the absorption coefficient at the photon energy approaching the value of energy bandgap is small. Furthermore, efficient light management is important in

Metal–dielectric hybrid nanoantennas for efficient frequency conversion at the anapole mode

• Valerio F. Gili,
• Lavinia Ghirardini,
• Davide Rocco,
• Giuseppe Marino,
• Ivan Favero,
• Iännis Roland,
• Giovanni Pellegrini,
• Lamberto Duò,
• Marco Finazzi,
• Luca Carletti,
• Andrea Locatelli,
• Aristide Lemaître,
• Dragomir Neshev,
• Costantino De Angelis,
• Giuseppe Leo and
• Michele Celebrano

Beilstein J. Nanotechnol. 2018, 9, 2306–2314, doi:10.3762/bjnano.9.215

• ; plasmonics; second-harmonic generation; semiconductors; Introduction Second-harmonic generation (SHG) in bulk materials, first demonstrated by Franken and co-workers in 1961 [1], is nowadays successfully applied in a variety of disciplines. Besides its extended application in laser science for the

• symmetry. Metal-less nanophotonics based on dielectrics of high refractive index and semiconductors recently emerged as a promising alternative to plasmonic nanostructures for linear and nonlinear nanophotonic applications due to the reduced losses at optical frequencies [15]. Since in high-index

• dielectric materials the electric field penetrates deeply into the volume [16], the exploitation of large bulk nonlinearities also enables enhanced nonlinear light–matter interactions at the nanoscale. Third-harmonic generation (THG) was the first nonlinear effect observed in nanoscale semiconductors with

Hierarchical heterostructures of Bi₂MoO₆ microflowers decorated with Ag₂CO₃ nanoparticles for efficient visible-light-driven photocatalytic removal of toxic pollutants

• Shijie Li,
• Wei Jiang,
• Shiwei Hu,
• Yu Liu,
• Yanping Liu,
• Kaibing Xu and
• Jianshe Liu

Beilstein J. Nanotechnol. 2018, 9, 2297–2305, doi:10.3762/bjnano.9.214

• obstacle, various methods have been developed, including doping [20][21] and the construction of heterojunctions [22][23][24][25][26][27][28][29][30][31][32][33]. Particularly, the combination of Bi2MoO6 with other semiconductors to construct heterojunction photocatalysts leads to an enhanced activity of

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• [7][8] and dopant-associated defect states [8][9]. Modulation doping – i.e., doping of materials adjacent to semiconductors which then provide free carriers to the unperturbed semiconductor – was first used for group III–V semiconductor combinations such as GaAs/AlAs in the late 1970s [10]. Recently

• , Si modulation doping of adjacent dielectric layers based on nitrides [11] and oxides [12], in analogy to modulation doping of III–V semiconductors, were shown to be an alternative to conventional impurity doping. It would be ideal to achieve electron- (n-) or hole- (p-) type conductivity in usn-Si

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

• market is dominated by silicon solar cells with top light-to-current conversion efficiencies reaching ≈27% [1]. As an alternative to the Si-based cells requiring a relatively thick absorber layer due to the indirect character of electron transitions in Si, direct-bandgap metal chalcogenide semiconductors

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

• Muhammad Imran,
• Nunzio Motta and
• Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

• materials used as an active sensing layer, including polymers, metal oxide semiconductors, graphene, and their composites or their functionalized forms. The material properties of these electrospun fibers and their sensing performance toward different analytes are explained in detail and correlated to the

• review and summarize the fabrication of electrospun 1D nanostructures based on diverse range of materials (including polymers, metal oxide semiconductors, graphene, and their composites or their functionalized forms) and their gas sensing performance in all available sensing architectures (including

• electrospun nanofibers as the sensing layer. These materials include: metal oxide (MOx) semiconductors (e.g., SnO2, TiO2, SiO2) [83][84], doped MOx semiconductors [4][5][6][7][8][9][10][11], composite materials made of MOx semiconducting materials (e.g., ZnO-In2O3) [86], conducting polymer-based gas sensors

Light–Matter interactions on the nanoscale

• Mohsen Rahmani and
• Chennupati Jagadish

Beilstein J. Nanotechnol. 2018, 9, 2125–2127, doi:10.3762/bjnano.9.201

• in metals), the knowledge is still valuable for developing new strategies for light–matter interactions on the nanoscale. High refractive index dielectric [11] and semiconductor [12] nanostructures have been recently exploited as an alternative to plasmonics [13]. Dielectrics and semiconductors

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• SOI samples were prepared and MLD-doped through the methods outlined in the Experimental section. ECV was not applicable to analyse active carrier concentrations present in these samples due to their inability to etch. When etching n-type doped semiconductors, ECV requires the application of a voltage

Localized photodeposition of catalysts using nanophotonic resonances in silicon photocathodes

• Evgenia Kontoleta,
• Sven H. C. Askes,
• Lai-Hung Lai and
• Erik C. Garnett

Beilstein J. Nanotechnol. 2018, 9, 2097–2105, doi:10.3762/bjnano.9.198

• Evgenia Kontoleta Sven H. C. Askes Lai-Hung Lai Erik C. Garnett Center for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, Netherlands 10.3762/bjnano.9.198 Abstract Nanostructured semiconductors feature resonant optical modes that confine light absorption in specific areas called “hot

• carrier. Nanostructuring the main photoactive material, e.g., a semiconductor, has proven to be a promising method for increasing the efficiency of solar fuel generation [7][8]. The higher surface to volume ratio in nanostructured semiconductors ensures the use of less material, reduces the requirements

• are simply randomly placed on semiconductor photo-electrodes with an optimized average density [20][24][25]. Photodeposition of the catalytic material with photogenerated charges from excited semiconductors has been also achieved but without a good control over the deposition sites [26][27][28][29][30

Electromigrated electrical optical antennas for transducing electrons and photons at the nanoscale

• Arindam Dasgupta,
• Mickaël Buret,
• Nicolas Cazier,
• Marie-Maxime Mennemanteuil,
• Reinaldo Chacon,
• Kamal Hammani,
• Jean-Claude Weeber,
• Juan Arocas,
• Laurent Markey,
• Gérard Colas des Francs,
• Alexander Uskov,
• Igor Smetanin and
• Alexandre Bouhelier

Beilstein J. Nanotechnol. 2018, 9, 1964–1976, doi:10.3762/bjnano.9.187

• guide photons emitted by the junctions. For the operation at visible wavelengths waveguiding structures composed of TiO2 feature interesting material properties [60][61] such as broadband transparency, high refractive index, compatibility with complementary metal-oxide semiconductors and ease of