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Search for "van der Waals forces" in Full Text gives 130 result(s) in Beilstein Journal of Nanotechnology.

Theoretical study of the frequency shift in bimodal FM-AFM by fractional calculus

  • Elena T. Herruzo and
  • Ricardo Garcia

Beilstein J. Nanotechnol. 2012, 3, 198–206, doi:10.3762/bjnano.3.22

Graphical Abstract
  • length scale of the interaction force. For the force which appears in the DMT model [51] where H is the Hamaker constant of the long-range van der Waals forces, d0 is the equilibrium distance, R is the tip radius and Eeff is the effective Young’s modulus, which is related to the Young’s moduli Et and Es
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Published 07 Mar 2012

STM study on the self-assembly of oligothiophene-based organic semiconductors

  • Elena Mena-Osteritz,
  • Marta Urdanpilleta,
  • Erwaa El-Hosseiny,
  • Berndt Koslowski,
  • Paul Ziemann and
  • Peter Bäuerle

Beilstein J. Nanotechnol. 2011, 2, 802–808, doi:10.3762/bjnano.2.88

Graphical Abstract
  • weak intermolecular van der Waals forces and molecule–substrate interactions, as well as intermolecular hydrogen bonding in the case of functionalized oligothiophenes [15][16][17]. The typical flat metallic substrates (HOPG, Au(111), Ag(111), etc.) employed in STM differ from the ITO electrodes used in
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Published 07 Dec 2011

Distinguishing magnetic and electrostatic interactions by a Kelvin probe force microscopy–magnetic force microscopy combination

  • Miriam Jaafar,
  • Oscar Iglesias-Freire,
  • Luis Serrano-Ramón,
  • Manuel Ricardo Ibarra,
  • Jose Maria de Teresa and
  • Agustina Asenjo

Beilstein J. Nanotechnol. 2011, 2, 552–560, doi:10.3762/bjnano.2.59

Graphical Abstract
  • Table 1. The values have been calculated using Equation 2 and Equation 3 and the equation in [30]. For the van der Waals forces we assume a tip radius of 30 nm and AH of about 10−19 J. The electrostatic interaction is calculated for a tip with an electrical radius slightly smaller due to the existence
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Published 07 Sep 2011

Switching adhesion forces by crossing the metal–insulator transition in Magnéli-type vanadium oxide crystals

  • Bert Stegemann,
  • Matthias Klemm,
  • Siegfried Horn and
  • Mathias Woydt

Beilstein J. Nanotechnol. 2011, 2, 59–65, doi:10.3762/bjnano.2.8

Graphical Abstract
  • ) has become a powerful tool for measuring the forces interacting between a sharp tip and a solid sample surface, such as van der Waals forces and short-range chemical forces [14][15][16][17]. Typically, the AFM is used for a spatially resolved imaging of forces, which requires a tip with a sharp apex
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Published 27 Jan 2011

Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy

  • Thomas König,
  • Georg H. Simon,
  • Lars Heinke,
  • Leonid Lichtenstein and
  • Markus Heyde

Beilstein J. Nanotechnol. 2011, 2, 1–14, doi:10.3762/bjnano.2.1

Graphical Abstract
  • and van der Waals forces. The averaged frequency shift at the largest separation is about Δf = −0.52 Hz. By decreasing the tip-sample distance by 0.5 Å, the absolute value of the tunneling current and the frequency shift increase at the position of the defect. The tunneling current increases to It
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Published 03 Jan 2011
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