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Search for "electronics" in Full Text gives 497 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Magnetic-field sensor with self-reference characteristic based on a magnetic fluid and independent plasmonic dual resonances

  • Kun Ren,
  • Xiaobin Ren,
  • Yumeng He and
  • Qun Han

Beilstein J. Nanotechnol. 2019, 10, 247–255, doi:10.3762/bjnano.10.23

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  • Kun Ren Xiaobin Ren Yumeng He Qun Han College of Precision Instrument and Opto-electronics Engineering,Tianjin University; Key Laboratory of Opto-electronics Information Technology, Ministry of Education, Tianjin 300072, China School of Science, Tianjin University of Science and Technology
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Published 22 Jan 2019

Mechanism of silica–lysozyme composite formation unravelled by in situ fast SAXS

  • Tomasz M. Stawski,
  • Daniela B. van den Heuvel,
  • Rogier Besselink,
  • Dominique J. Tobler and
  • Liane G. Benning

Beilstein J. Nanotechnol. 2019, 10, 182–197, doi:10.3762/bjnano.10.17

Graphical Abstract
  • because silica NPs readily form in many Earth surface environments (e.g., oceans, hot springs) where biological activity dominates (e.g., diatom formation) but they are also key components in numerous technological applications from electronics to paint production. In turn, lysozyme adsorbs strongly to
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Published 14 Jan 2019

Wet chemistry route for the decoration of carbon nanotubes with iron oxide nanoparticles for gas sensing

  • Hussam M. Elnabawy,
  • Juan Casanova-Chafer,
  • Badawi Anis,
  • Mostafa Fedawy,
  • Mattia Scardamaglia,
  • Carla Bittencourt,
  • Ahmed S. G. Khalil,
  • Eduard Llobet and
  • Xavier Vilanova

Beilstein J. Nanotechnol. 2019, 10, 105–118, doi:10.3762/bjnano.10.10

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  • Hussam M. Elnabawy Juan Casanova-Chafer Badawi Anis Mostafa Fedawy Mattia Scardamaglia Carla Bittencourt Ahmed S. G. Khalil Eduard Llobet Xavier Vilanova Electronics & Communications Department, Faculty of Engineering, Arab Academy for Science and Technology & Maritime Transport, Cairo, Egypt
  • Versaprobe PHI 5000 from Physical Electronics, equipped with a monochromatic Al Kα X-ray source at a base pressure of about 10−9 mbar. The sample powders were mounted on double-sided conductive vacuum tape. The X-ray photoelectron spectra were collected at a take-off angle of 45° with respect to the electron
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Published 09 Jan 2019

Threshold voltage decrease in a thermotropic nematic liquid crystal doped with graphene oxide flakes

  • Mateusz Mrukiewicz,
  • Krystian Kowiorski,
  • Paweł Perkowski,
  • Rafał Mazur and
  • Małgorzata Djas

Beilstein J. Nanotechnol. 2019, 10, 71–78, doi:10.3762/bjnano.10.7

Graphical Abstract
  • was controlled with a Linkam TMS 93 controller and a heating stage, THMSE 600. The intensity of light propagating through the cell under crossed polarizers, without the applied electric field, was registered with a photodetector, FLC Electronics PIN 20. The switching times were measured using the same
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Published 07 Jan 2019

A comparison of tarsal morphology and traction force in the two burying beetles Nicrophorus nepalensis and Nicrophorus vespilloides (Coleoptera, Silphidae)

  • Liesa Schnee,
  • Benjamin Sampalla,
  • Josef K. Müller and
  • Oliver Betz

Beilstein J. Nanotechnol. 2019, 10, 47–61, doi:10.3762/bjnano.10.5

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  • various roughness scales on insect attachment forces, traction force experiments (Figure 5c–d) were conducted on epoxy casts (Epoxydharz L®, No 236349, Conrad electronics, Hirschau, Deutschland) made by using a two-step-method [54], on glass slides (Figure 5e: smooth) and on Al2O3 polishing paper (261X
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Published 04 Jan 2019

Surface plasmon resonance enhancement of photoluminescence intensity and bioimaging application of gold nanorod@CdSe/ZnS quantum dots

  • Siyi Hu,
  • Yu Ren,
  • Yue Wang,
  • Jinhua Li,
  • Junle Qu,
  • Liwei Liu,
  • Hanbin Ma and
  • Yuguo Tang

Beilstein J. Nanotechnol. 2019, 10, 22–31, doi:10.3762/bjnano.10.3

Graphical Abstract
  • properties. Additionally, the use of multifunctional nanomaterials with near-infrared QDs and plasmonic functional nanoparticles are promising for applications in electronics, bioimaging, energy, and environmental-related studies. In this work, we experimentally demonstrate how to construct a multifunctional
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Published 03 Jan 2019

Characterization and influence of hydroxyapatite nanopowders on living cells

  • Przemyslaw Oberbek,
  • Tomasz Bolek,
  • Adrian Chlanda,
  • Seishiro Hirano,
  • Sylwia Kusnieruk,
  • Julia Rogowska-Tylman,
  • Ganna Nechyporenko,
  • Viktor Zinchenko,
  • Wojciech Swieszkowski and
  • Tomasz Puzyn

Beilstein J. Nanotechnol. 2018, 9, 3079–3094, doi:10.3762/bjnano.9.286

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  • sectors, including automobile, chemicals, construction, cosmetics, electronics, energy, engineering, environment, medicine, security, sports, telecommunication, textiles and transportation [1][2]. The International Organization for Standardization, in cooperation with the European Committee for
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Published 27 Dec 2018

Ternary nanocomposites of reduced graphene oxide, polyaniline and hexaniobate: hierarchical architecture and high polaron formation

  • Claudio H. B. Silva,
  • Maria Iliut,
  • Christopher Muryn,
  • Christian Berger,
  • Zachary Coldrick,
  • Vera R. L. Constantino,
  • Marcia L. A. Temperini and
  • Aravind Vijayaraghavan

Beilstein J. Nanotechnol. 2018, 9, 2936–2946, doi:10.3762/bjnano.9.272

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  • Nanostructured systems, such as nanocomposites, are potential materials for usage as electrochemical (bio)sensors for analytical purposes, electronics, energy storage devices and corrosion protection because the synergistic effects of their components at the nanoscale range may improve physical/chemical
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Published 26 Nov 2018

Charged particle single nanometre manufacturing

  • Philip D. Prewett,
  • Cornelis W. Hagen,
  • Claudia Lenk,
  • Steve Lenk,
  • Marcus Kaestner,
  • Tzvetan Ivanov,
  • Ahmad Ahmad,
  • Ivo W. Rangelow,
  • Xiaoqing Shi,
  • Stuart A. Boden,
  • Alex P. G. Robinson,
  • Dongxu Yang,
  • Sangeetha Hari,
  • Marijke Scotuzzi and
  • Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

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  • 7HN, UK Department of Imaging Physics, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Max-Planck-Ring 1, Ilmenau 98693, Germany Electronics and Computer Science, University of Southampton
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Published 14 Nov 2018

Controlling surface morphology and sensitivity of granular and porous silver films for surface-enhanced Raman scattering, SERS

  • Sherif Okeil and
  • Jörg J. Schneider

Beilstein J. Nanotechnol. 2018, 9, 2813–2831, doi:10.3762/bjnano.9.263

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  • Electronics) scanning Auger nanoprobe operated at an acceleration voltage of 20 keV and a current of 10 nA. Sputtering was carried out under ultra-high vacuum (5 × 10−9 Torr), with an argon gun operated at 250 eV and 500 nA. The UV–vis spectra of the silver films on glass substrate were recorded by a Thermo
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Published 07 Nov 2018

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

  • Alexander S. Pashchenko,
  • Leonid S. Lunin,
  • Eleonora M. Danilina and
  • Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

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  • Electronics, Platov South-Russian State Polytechnic University (NPI), 346428, 132, Prosveshchenia str., Novocherkassk, Russia 10.3762/bjnano.9.261 Abstract This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of GaAs potential barriers, and
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Published 02 Nov 2018

Two-dimensional semiconductors pave the way towards dopant-based quantum computing

  • José Carlos Abadillo-Uriel,
  • Belita Koiller and
  • María José Calderón

Beilstein J. Nanotechnol. 2018, 9, 2668–2673, doi:10.3762/bjnano.9.249

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  • . The synergy among different experimental techniques for dopant positioning in 3D semiconductors, combined with recent advances in 2D materials-based electronics and multilayered architectures control, provide key technical tools for the practical implementation of donor-based spin qubits. Finally
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Published 12 Oct 2018

Silicene, germanene and other group IV 2D materials

  • Patrick Vogt

Beilstein J. Nanotechnol. 2018, 9, 2665–2667, doi:10.3762/bjnano.9.248

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  • two-dimensional (2D) honeycomb materials with potentially similar exotic properties, as predicted by theoretical investigations. These properties may allow the application of these layered structures in novel electronic devices, including ultrafast electronics, spintronics, sensors, and novel device
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Editorial
Published 10 Oct 2018

Au–Si plasmonic platforms: synthesis, structure and FDTD simulations

  • Anna Gapska,
  • Marcin Łapiński,
  • Paweł Syty,
  • Wojciech Sadowski,
  • Józef E. Sienkiewicz and
  • Barbara Kościelska

Beilstein J. Nanotechnol. 2018, 9, 2599–2608, doi:10.3762/bjnano.9.241

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  • . However, the number of works on this subject has increased significantly over the last ten years. This is mainly due to technological needs related to the development of optoelectronics, photonics, electronics and energy conversion systems, fields in which metallic nanostructures found their application
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Published 28 Sep 2018

Directional light beams by design from electrically driven elliptical slit antennas

  • Shuiyan Cao,
  • Eric Le Moal,
  • Quanbo Jiang,
  • Aurélien Drezet,
  • Serge Huant,
  • Jean-Paul Hugonin,
  • Gérald Dujardin and
  • Elizabeth Boer-Duchemin

Beilstein J. Nanotechnol. 2018, 9, 2361–2371, doi:10.3762/bjnano.9.221

Graphical Abstract
  • literature [10][11][12][13][14][15][16][17][18][19], where the emission of light is activated using low voltage (a few volts) and low current (nanoamperes to microamperes), compatible with integrated electronics. These antennas were based on plasmonic micro- or nanostructures of various geometries (Yagi–Uda
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Published 03 Sep 2018

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating

  • Dirk König,
  • Daniel Hiller,
  • Noël Wilck,
  • Birger Berghoff,
  • Merlin Müller,
  • Sangeeta Thakur,
  • Giovanni Di Santo,
  • Luca Petaccia,
  • Joachim Mayer,
  • Sean Smith and
  • Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

Graphical Abstract
  • Engineering (IMTEK), University of Freiburg, 79110, Germany Research School of Engineering, The Australian National University, ACT 2601, Australia Institute of Semiconductor Electronics (IHT), RWTH Aachen University, 52074, Germany Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons, RWTH
  • doping for ULSI, provide new opportunities for ultralow power electronics and open a whole new vista on the introduction of p- and n-type conductivity into usn-Si. Keywords: energy offset; impurity doping alternative; ultrasmall nanoscale silicon crystals; wires and devices; Introduction Impurity
  • doping of silicon (Si) has been a key technique and prerequisite for Si-based electronics for decades [1]. Miniaturization in Si ultralarge scale integration (ULSI) became increasingly difficult as device features approached the characteristic lengths of dopant out-diffusion, clustering and inactivation
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Published 23 Aug 2018

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

  • Noel Kennedy,
  • Ray Duffy,
  • Luke Eaton,
  • Dan O’Connell,
  • Scott Monaghan,
  • Shane Garvey,
  • James Connolly,
  • Chris Hatem,
  • Justin D. Holmes and
  • Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

Graphical Abstract
  • preparing devices for applications in the electronics industry such as CMOS. The short-channel effect (SCE) becomes more profound with reduced device dimensions and when combined with crystal damage leads to high leakage currents, which result in elevated power consumption. Therefore, it is essential for
  • silicon layer). Bulk silicon transistors encounter difficulties when scaled below 20 nm due to SCE and significant leakage currents, which increase their power consumption. SOI and three-dimensional finFET structures are two means of device scaling that are currently being pursued by the electronics
  • electronics, thermoelectrics and photovoltaics. MLD is capable of damage-free source/drain doping of planar SOI. There have been no previous publications of MLD on SOI substrates, which due to their confined dimensions, may provide an opportunity to limit dopant atom diffusion and therefore achieve active
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Published 06 Aug 2018

A variable probe pitch micro-Hall effect method

  • Maria-Louise Witthøft,
  • Frederik W. Østerberg,
  • Janusz Bogdanowicz,
  • Rong Lin,
  • Henrik H. Henrichsen,
  • Ole Hansen and
  • Dirch H. Petersen

Beilstein J. Nanotechnol. 2018, 9, 2032–2039, doi:10.3762/bjnano.9.192

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  • , Kapeldreef 75, B-3001 Leuven, Belgium 10.3762/bjnano.9.192 Abstract Hall effect metrology is important for a detailed characterization of the electronic properties of new materials for nanoscale electronics. The micro-Hall effect (MHE) method, based on micro four-point probes, enables a fast
  • comprises, e.g., Johnson noise from the two-point resistance and wiring resistance, as well as noise from the measurement electronics. The voltage noise is assumed to have the same standard deviation σv = 60 nV for all twelve resistance measurements [21], which in turn are assumed to be uncorrelated. The
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Published 20 Jul 2018

Electromigrated electrical optical antennas for transducing electrons and photons at the nanoscale

  • Arindam Dasgupta,
  • Mickaël Buret,
  • Nicolas Cazier,
  • Marie-Maxime Mennemanteuil,
  • Reinaldo Chacon,
  • Kamal Hammani,
  • Jean-Claude Weeber,
  • Juan Arocas,
  • Laurent Markey,
  • Gérard Colas des Francs,
  • Alexander Uskov,
  • Igor Smetanin and
  • Alexandre Bouhelier

Beilstein J. Nanotechnol. 2018, 9, 1964–1976, doi:10.3762/bjnano.9.187

Graphical Abstract
  • a 2 nm thick Cr or Ti adhesion layer to improve gold adhesion on the glass substrate. A scanning electron micrograph of a pristine 150 nm wide Au constriction formed between two bow-tie leads is exemplified in Figure 1a. The electrical connections of the constriction to outside control electronics
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Published 11 Jul 2018

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers

  • Richard Daubriac,
  • Emmanuel Scheid,
  • Hiba Rizk,
  • Richard Monflier,
  • Sylvain Joblot,
  • Rémi Beneyton,
  • Pablo Acosta Alba,
  • Sébastien Kerdilès and
  • Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

Graphical Abstract
  • of electronics devices. For instance, the “bulk” planar transistor limitations have been overcome thanks to the transition towards more complex device architectures. These include enhanced planar architectures such as fully depleted silicon on insulator (FDSOI) [1] or 3D architectures ranging from
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Published 05 Jul 2018

Synthesis of carbon nanowalls from a single-source metal-organic precursor

  • André Giese,
  • Sebastian Schipporeit,
  • Volker Buck and
  • Nicolas Wöhrl

Beilstein J. Nanotechnol. 2018, 9, 1895–1905, doi:10.3762/bjnano.9.181

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  • were deposited from aluminium acetylacetonate (Al(acac)3) as precursor in an ICP-PECVD reactor. A schematic diagram of the inductively coupled plasma system is shown in Figure 2. The plasma is generated in a gaseous electronics conference (GEC) reference cell reactor [25] with a special modified
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Published 29 Jun 2018

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

  • Hichem Ferhati,
  • Fayçal Djeffal and
  • Toufik Bentrcia

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

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  • Hichem Ferhati Faycal Djeffal Toufik Bentrcia LEA, Department of Electronics, University Mostefa Benboulaid-Batna 2, Batna 05000, Algeria LEPCM, University of Batna 1, Batna 05000, Algeria 10.3762/bjnano.9.177 Abstract In this paper, a new nanoscale double-gate junctionless tunneling field-effect
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Published 22 Jun 2018

Improving the catalytic activity for hydrogen evolution of monolayered SnSe2(1−x)S2x by mechanical strain

  • Sha Dong and
  • Zhiguo Wang

Beilstein J. Nanotechnol. 2018, 9, 1820–1827, doi:10.3762/bjnano.9.173

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  • Sha Dong Zhiguo Wang School of Electronics Science and Engineering, Center for Public Security Technology Research, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China 10.3762/bjnano.9.173 Abstract Exploring efficient electrocatalysts for hydrogen production with
  • ], electronics [28], and catalysis [29], as well as in the fabrication of solar cells and film electrodes [30]. A good electro-catalyst for HER should have sufficient active sites for catalysis. Furthermore, because electrons participate in the HER process, an ideal catalyst for HER should have good electronic
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Published 18 Jun 2018

Nanoscale electrochemical response of lithium-ion cathodes: a combined study using C-AFM and SIMS

  • Jonathan Op de Beeck,
  • Nouha Labyedh,
  • Alfonso Sepúlveda,
  • Valentina Spampinato,
  • Alexis Franquet,
  • Thierry Conard,
  • Philippe M. Vereecken,
  • Wilfried Vandervorst and
  • Umberto Celano

Beilstein J. Nanotechnol. 2018, 9, 1623–1628, doi:10.3762/bjnano.9.154

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  • demands from modern society on autonomous electronics, such as portable devices, internet-of-things applications and implants [1]. A multitude of studies have already indicated that nanotechnology, nanostructured designs and nanocomposite materials will play an important role for future Li-ion batteries
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Published 04 Jun 2018

Cr(VI) remediation from aqueous environment through modified-TiO2-mediated photocatalytic reduction

  • Rashmi Acharya,
  • Brundabana Naik and
  • Kulamani Parida

Beilstein J. Nanotechnol. 2018, 9, 1448–1470, doi:10.3762/bjnano.9.137

Graphical Abstract
  • surface area, graphene and its derivatives have attracted significant attention for various applications like photocatalysis, energy storage, nano-electronics and photovoltaics [106][107][108][109][110]. In photocatalytic water treatment, these are considered as promising candidates to combine with
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Published 16 May 2018
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