Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions

• Sreetama Banerjee,
• Daniel Bülz,
• Danny Reuter,
• Karla Hiller,
• Dietrich R. T. Zahn and
• Georgeta Salvan

Beilstein J. Nanotechnol. 2017, 8, 1502–1507, doi:10.3762/bjnano.8.150

• trenches were patterned using conventional UV lithography and partially refilled with a thermally grown SiO2 layer of 130 nm. The cavity-like trench (see Figure 1b for a sketch) electrically isolates the electrodes. The process flow for the preparation of the HED-TIEs is similar to that described in [12

Calcium fluoride based multifunctional nanoparticles for multimodal imaging

• Marion Straßer,
• Joachim H. X. Schrauth,
• Sofia Dembski,
• Daniel Haddad,
• Bernd Ahrens,
• Stefan Schweizer,
• Bastian Christ,
• Alevtina Cubukova,
• Marco Metzger,
• Heike Walles,
• Peter M. Jakob and
• Gerhard Sextl

Beilstein J. Nanotechnol. 2017, 8, 1484–1493, doi:10.3762/bjnano.8.148

• received little attention. There are only sporadic suggestions for the synthesis and application of this NP system as a labeling material. To date, CaF2 has attracted most attention with respect to UV lithography, UV-transparent optical lenses, the surface conditioning of glass, the promotion of

Micro- and nano-surface structures based on vapor-deposited polymers

• Hsien-Yeh Chen

Beilstein J. Nanotechnol. 2017, 8, 1366–1374, doi:10.3762/bjnano.8.138

• applied for surface modification regardless of the substrate material and geometry. Here, various ways to structure these vapor-deposited polymer thin films are described. Well-established and available photolithography and soft lithography techniques are widely performed for the creation of surface

• ]. Also, printing methods with elastomeric stamps or replica structures to transfer a material from a solution onto a surface, which are collectively related to imprinting lithography [15][16] or soft lithography [17][18], were developed. Thus, the early developments of the patterning and structuring

• attempted by direct electron beam (e-beam) lithography on vapor-deposited PPMA coatings, and 200 nm-sized features were obtained on the vapor-deposited poly(propargyl methacrylate) (PPMA) films [34]. Direct writing using a two-photon laser was also demonstrated on poly(p-xylylene) to fabricate 3D nano

Nanotopographical control of surfaces using chemical vapor deposition processes

• Meike Koenig and
• Joerg Lahann

Beilstein J. Nanotechnol. 2017, 8, 1250–1256, doi:10.3762/bjnano.8.126

• feed. Trujillo et al. produced polymeric nanostructures using colloidal lithography [12]. In this technique, two-dimensional self-assembled monolayer (SAM) arrays of colloidal nanoparticles serve as lithographic templates for “nanobowl” patterns in an initiated chemical vapor deposition (iCVD) process

A top-down approach for fabricating three-dimensional closed hollow nanostructures with permeable thin metal walls

• Carlos Angulo Barrios and
• Víctor Canalejas-Tejero

Beilstein J. Nanotechnol. 2017, 8, 1231–1237, doi:10.3762/bjnano.8.124

• on planar substrates offered by common lithography techniques. However, the fabrication of closed nanocages with permeable walls by means of top-down procedures is challenging due to the difficulty in obtaining robust, closed, 3D geometries with nanometer-thick shells. Thus, demonstrations of the use

• fabrication sequence of an array of closed nanocages (hollow nanopillars) made of thin-walled Al. First, an array of SU-8 negative resist nanopillars are created by electron-beam lithography (EBL) on an Al-coated Si substrate (Figure 1a). The SU-8 nanopillars exhibit a smooth surface with rounded top edges

• nanocontainers by just adding them to the SU-8 viscous resist before lithography. After the removal of the crosslinked SU-8 via oxygen-plasma treatment, the load is contained inside the nanocage. It is clear that the potential effect of the oxygen plasma on the caged substance should be taken into account. For

Growth, structure and stability of sputter-deposited MoS₂ thin films

• Reinhard Kaindl,
• Bernhard C. Bayer,
• Roland Resel,
• Thomas Müller,
• Viera Skakalova,
• Gerlinde Habler,
• Rainer Abart,
• Alexey S. Cherevan,
• Dominik Eder,
• Maxime Blatter,
• Fabian Fischer,
• Jannik C. Meyer,
• Dmitry K. Polyushkin and
• Wolfgang Waldhauser

Beilstein J. Nanotechnol. 2017, 8, 1115–1126, doi:10.3762/bjnano.8.113

• fabricated by means of optical lithography and standard contact deposition routes. As the global back gate to the FET devices the highly doped Si wafer under the 90 nm SiO2 film, onto which the MoS2 had been deposited, was employed. Electrical transport characteristics have been tested by measuring the drain

• (FET) devices with rectangular and circular contacts have been made. The drain/source contacts were defined by means of optical lithography. The Ti/Au (5/50 nm) contact pads have been fabricated by means of thermal evaporation. As the global back gate to the FET devices the highly doped Si wafer under

The integration of graphene into microelectronic devices

• Guenther Ruhl,
• Sebastian Wittmann,
• Matthias Koenig and
• Daniel Neumaier

Beilstein J. Nanotechnol. 2017, 8, 1056–1064, doi:10.3762/bjnano.8.107

• contamination of graphene by following lithography steps. One method utilizes a one-step plasma-etch process with low selectivity to the underlying dielectric substrate to etch the encapsulation/hardmask layer and the underlying graphene simultaneously. An alternative approach applies two consecutive steps to

Assembly of metallic nanoparticle arrays on glass via nanoimprinting and thin-film dewetting

• Sun-Kyu Lee,
• Sori Hwang,
• Yoon-Kee Kim and
• Yong-Jun Oh

Beilstein J. Nanotechnol. 2017, 8, 1049–1055, doi:10.3762/bjnano.8.106

• , high-resolution lithography techniques – such as electron beam lithography (EBL) or laser interference lithography (LIL) – with a conventional multistep etching process on a silicon wafer are still required to fabricate templates with nanostructured surface topographies that determine the features of

• the dewetted nanoparticles [1][12][13][14][15]. These complicated processing steps for prepatterned templates critically restrict extensive application of the thin-film dewetting technique. Furthermore, lithography techniques based on silicon wafers have limitations when the template must also serve

• as a functional layer. Thus, the applicability of a self-assembly technique that uses dewetting largely depends on how it can be combined with appropriate template materials that have both functionality and dewettability. In this regard, nanoimprint lithography (NIL) is expected to be an effective

CVD transfer-free graphene for sensing applications

• Chiara Schiattarella,
• Sten Vollebregt,
• Tiziana Polichetti,
• Brigida Alfano,
• Ettore Massera,
• Maria Lucia Miglietta,
• Girolamo Di Francia and
• Pasqualina Maria Sarro

Beilstein J. Nanotechnol. 2017, 8, 1015–1022, doi:10.3762/bjnano.8.102

• of conductometric devices in which multilayer graphene films have been directly synthesized on insulating SiO2 substrates by means of a transfer-free CVD method mediated by Mo. The pre-patterning of the Mo layer allows the graphene to be shaped in the desired form by means of standard lithography

Near-field surface plasmon field enhancement induced by rippled surfaces

• Mario D’Acunto,
• Francesco Fuso,
• Ruggero Micheletto,
• Makoto Naruse,
• Francesco Tantussi and
• Maria Allegrini

Beilstein J. Nanotechnol. 2017, 8, 956–967, doi:10.3762/bjnano.8.97

• -down lithographic techniques such as electron beam lithography and nanosphere lithography [22][23][24]. In this paper, we simulate the conditions of SPP field enhancement and the formation of dark and hot, or bright spots, for a wide variety of patterned surfaces. The patterned surfaces are numerically

Synthesis of coaxial nanotubes of polyaniline and poly(hydroxyethyl methacrylate) by oxidative/initiated chemical vapor deposition

• Alper Balkan,
• Efe Armagan and
• Gozde Ozaydin Ince

Beilstein J. Nanotechnol. 2017, 8, 872–882, doi:10.3762/bjnano.8.89

• -beam evaporation, conventional lithography with a shadow mask was used to create a pattern for the electrodes. The photoresist AZ 5214 E (Merck GmbH), the developer AZ 726 (MIF) (Merck GmbH) and deionized water (stopper) were used for the lithography. After the e-beam evaporation, samples were annealed

Relationships between chemical structure, mechanical properties and materials processing in nanopatterned organosilicate fins

• Gheorghe Stan,
• Richard S. Gates,
• Qichi Hu,
• Kevin Kjoller,
• Craig Prater,
• Kanwal Jit Singh,
• Ebony Mays and
• Sean W. King

Beilstein J. Nanotechnol. 2017, 8, 863–871, doi:10.3762/bjnano.8.88

• layer and a hard mask. Standard 193 nm immersion lithography and etching techniques were utilized to form a grid pattern in the first backbone layer. A spacer dielectric was then deposited over the backbone grid and the backbone material was selectively removed. Standard plasma-etching techniques were

3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity

• Brett B. Lewis,
• Robert Winkler,
• Xiahan Sang,
• Pushpa R. Pudasaini,
• Michael G. Stanford,
• Harald Plank,
• Raymond R. Unocic,
• Jason D. Fowlkes and
• Philip D. Rack

Beilstein J. Nanotechnol. 2017, 8, 801–812, doi:10.3762/bjnano.8.83

• combination of photolithography and electron beam lithography (EBL) were used to produce the two-contact pads with a spacing of 500 nm. An initial set of gold electrical contacts were patterned using photolithography and deposited with a thickness of 100 nm. A 3 nm titanium adhesion layer was deposited, prior

Surface improvement of organic photoresists using a near-field-dependent etching method

• Felix J. Brandenburg,
• Tomohiro Okamoto,
• Hiroshi Saito,
• Benjamin Leuschel,
• Olivier Soppera and
• Takashi Yatsui

Beilstein J. Nanotechnol. 2017, 8, 784–788, doi:10.3762/bjnano.8.81

• feature size year-by-year in order to sustain Moore’s Law [3][4], new processing techniques [5] as well as materials [6] are constantly being explored. One important criterion for new materials and techniques is their SR value, and the reduction of the SR is of great interest for high-end lithography

• and play an important role in high-end integrated circuit (IC) chip production. Since the quality of IC semiconductors is directly dependent on their SR, an improvement in the structure of the photoresist during the lithography process could significantly improve the quality of the semiconductor end

• was prepared using interference lithography. Specifically, the chemically amplified resist (EPIC 2096 ArF Photoresist) with an absorption edge of 310 nm was used. To observe the wavelength dependence, the continuous-wave (CW) laser sources used in these experiments were: (1) He–Cd laser (325 nm; 3.81

Vapor deposition routes to conformal polymer thin films

• Priya Moni,
• Ahmed Al-Obeidi and
• Karen K. Gleason

Beilstein J. Nanotechnol. 2017, 8, 723–735, doi:10.3762/bjnano.8.76

• CVD both in conformality and functional group retention for the deposition of conformal sensing molecules on microfluidic devices [30]. This concept was later used to enable PDMS-free microfluidic devices for oxygen-free flow-lithography, a process that can generate multifunctional micro and nano

Phospholipid arrays on porous polymer coatings generated by micro-contact spotting

• Sylwia Sekula-Neuner,
• Monica de Freitas,
• Lea-Marie Tröster,
• Tobias Jochum,
• Pavel A. Levkin,
• Michael Hirtz and
• Harald Fuchs

Beilstein J. Nanotechnol. 2017, 8, 715–722, doi:10.3762/bjnano.8.75

• software as previously described in [17]. Phospholipid array on nanoporous HEMA-EDMA polymer. a) Phospholipid microcontact spotting on porous HEMA-EDMA with microchannel cantilevers imaged in situ on the lithography system. b) Fluorescence microscopy image of the DOPC phospholipid array doped with

Silicon microgrooves for contact guidance of human aortic endothelial cells

• Sara Fernández-Castillejo,
• Pilar Formentín,
• Úrsula Catalán,
• Josep Pallarès,
• Lluís F. Marsal and
• Rosa Solà

Beilstein J. Nanotechnol. 2017, 8, 675–681, doi:10.3762/bjnano.8.72

• alkaline etch. A thin layer of positive photoresist AZ 1505 (MicroChemicals) was deposited by spin-coating on the silicon wafer at 500 rpm for 10 s then 5000 rpm for 30 s, following by baking at 100 °C for 30 s. Then the wafer was patterned by direct-write lithography (DWL 66FS, Heidelberg Instruments Gmbh

Computing the T-matrix of a scattering object with multiple plane wave illuminations

• Martin Fruhnert,
• Ivan Fernandez-Corbaton,
• Vassilios Yannopapas and
• Carsten Rockstuhl

Beilstein J. Nanotechnol. 2017, 8, 614–626, doi:10.3762/bjnano.8.66

• metallic disks, usually separated by a dielectric spacer layer. This particle is preferably fabricated by top-down procedures, such as electron beam lithography [5][45]. The investigated object has a disk radius of 60 nm, a disk height of 30 nm and a gap thickness of 10 nm. The metal disks consist of gold

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

• Massimiliano Lucci,
• Ivano Ottaviani,
• Matteo Cirillo,
• Fabio De Matteis,
• Roberto Francini,
• Vittorio Merlo and
• Ivan Davoli

Beilstein J. Nanotechnol. 2017, 8, 539–546, doi:10.3762/bjnano.8.58

• using a mixture of argon and nitrogen. The process parameters were optimized by monitoring the plasma with an optical spectroscopy technique. This technique allowed us to obtain NbN as well as good quality AlN films and both were used to obtain NbN/AlN/NbN trilayers. Lift-off lithography and selective

• processes for defining patterns on NbN thin films are typically based on ion etching and subsequent deposition of insulating layers [9][10][11]. We have tried to limit our fabrication recipe instead to minimal procedures, namely just lift-off lithography and selective anodization. By using lift-off

• lithography aggressive and high-energy etching processes such as ion milling and reactive ion etching (RIE) can be avoided. The use of anodization can reduce the number of mask and photolithography steps. In particular, it is not necessary to deposit further insulators to separate different metals in

Copper atomic-scale transistors

• Fangqing Xie,
• Maryna N. Kavalenka,
• Moritz Röger,
• Daniel Albrecht,
• Hendrik Hölscher,
• Jürgen Leuthold and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2017, 8, 530–538, doi:10.3762/bjnano.8.57

• and operation of the transistor in situ, and to test the operation of copper atomic-scale transistors in small volumes of electrolyte necessary for on-chip integration, chips with a circular window for containing the electrolyte were designed and fabricated with another standard lithography method

Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers

• Felix Pyatkov,
• Svetlana Khasminskaya,
• Vadim Kovalyuk,
• Frank Hennrich,
• Manfred M. Kappes,
• Gregory N. Goltsman,
• Wolfram H. P. Pernice and
• Ralph Krupke

Beilstein J. Nanotechnol. 2017, 8, 38–44, doi:10.3762/bjnano.8.5

• electron beam lithography on top of Si3N4/SiO2/Si substrate. Au/Cr contacts were produced by physical vapor deposition, and 600 nm wide, half-etched Si3N4-waveguides were formed with reactive ion etching. A typical sample contains tens of contact pairs and CNTs that were placed in between using

Nanostructured SnO₂–ZnO composite gas sensors for selective detection of carbon monoxide

• Paul Chesler,
• Cristian Hornoiu,
• Susana Mihaiu,
• Cristina Vladut,
• Jose Maria Calderon Moreno,
• Mihai Anastasescu,
• Carmen Moldovan,
• Bogdan Firtat,
• Costin Brasoveanu,
• George Muscalu,
• Ion Stan and
• Mariuca Gartner

Beilstein J. Nanotechnol. 2016, 7, 2045–2056, doi:10.3762/bjnano.7.195

• the optimum design of the transducer’s Pt heater, and b) fabrication of the transducer using mask technology and laser lithography on dedicated equipment, namely the Heidelberg DWL66FS, and wafer processing using photolithographic process with double-side alignment, metal etching and lift-off process

• microprocessing technology. The masks for the heater and the interdigital electrode were patterned onto a porous alumina substrate (wafer) using photolithography, etching and lift-off processes. Using the working protocol of the laser lithography dedicated equipment (Heidelberg DWL66FS), the design was

Effect of Anderson localization on light emission from gold nanoparticle aggregates

• Mohamed H. Abdellatif,
• Marco Salerno,
• Gaser N. Abdelrasoul,
• Ioannis Liakos,
• Alice Scarpellini,
• Sergio Marras and
• Alberto Diaspro

Beilstein J. Nanotechnol. 2016, 7, 2013–2022, doi:10.3762/bjnano.7.192

• localization is due to the increase of the radiative process in the localized field. These results suggest that by fabricating special surface patterns using electron beam lithography or by self-assembly, the localization of light can be engineered. The possibility to generate Anderson localization by control

Thickness-modulated tungsten–carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields

• Ismael García Serrano,
• Javier Sesé,
• Isabel Guillamón,
• Hermann Suderow,
• Sebastián Vieira,
• Manuel Ricardo Ibarra and
• José María De Teresa

Beilstein J. Nanotechnol. 2016, 7, 1698–1708, doi:10.3762/bjnano.7.162

• current. In the present work, we exploit such a strategy to create linear-shape vortex-pinning landscapes in W–C films grown by FIBID. In sharp contrast with the use of other growth and lithography techniques that require several steps (with the risk of increasing the random pinning produced by defects

• ][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45]. In order to design vortex-pinning landscapes, electron beam lithography is commonly used to fabricate arrays of holes [33][40] or arrays of magnetic dots/lines [30][34][36][39][41], whereas selective ion implantation [29][38][41

Nano- and microstructured materials for in vitro studies of the physiology of vascular cells

• Alexandra M. Greiner,
• Adria Sales,
• Hao Chen,
• Sarah A. Biela,
• Dieter Kaufmann and
• Ralf Kemkemer

Beilstein J. Nanotechnol. 2016, 7, 1620–1641, doi:10.3762/bjnano.7.155

• beam lithography, stereolithography, direct laser writing, and block co-polymer micellar nanolithography are applied. Based on the fabrication approach, fabrication techniques can be divided whether they follow a top-down approach or a bottom-up approach. In the first approach, an already existing bulk

• form the topography of the features in the plastic. Similar to replica molding in soft lithography, features down to around 10 nm can be replicated. Like soft lithography hot embossing is a cheap method suitable for large-scale manufacturing of substrates [50]. In principle, it can be used with many

• cell adaptation to dynamic changes of the substrate topography [51][52]. Replica molding is a soft lithography technique that uses an elastomeric soft material to replicate patterns (Figure 4B) [53][54]. With that method mainly micrometer-sized topographies are produced in the elastomer. Structures