Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

• The-Long Phan,
• Le Viet Cuong,
• Vu Dinh Lam and
• Ngoc Toan Dang

Beilstein J. Nanotechnol. 2024, 15, 1390–1399, doi:10.3762/bjnano.15.112

• comparison to other compounds [4][5][6]. Specifically, its large bandgap energy Eg ≈ 3.4 eV is comparable to GaN – a typical material for blue-light-emitting diode (LED) technology [7][8]. Also, its exciton binding energy is higher than the thermal energy at 300 K, and it has high-quality optical

Multiscale modelling of biomolecular corona formation on metallic surfaces

• Parinaz Mosaddeghi Amini,
• Ian Rouse,
• Julia Subbotina and
• Vladimir Lobaskin

Beilstein J. Nanotechnol. 2024, 15, 215–229, doi:10.3762/bjnano.15.21

• HIE, GLN, PHE, GAN (−43.86kBT to −20.85kBT). VAL, THR, SER, CYS, ALA exhibit the weakest attraction (−19.51kBT to −1.76kBT). On iron surfaces, charged and aromatic PRO, TYR, ARG, HIS AAs are strongly adsorbed (−91.29kBT to −43.34kBT), while hydrophobic VAL, LEU, ALA AAs show a weaker adhesion

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland Institute of Optoelectronics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland 10.3762/bjnano.14.46 Abstract The results of comparative studies on the fabrication and characterization of GaN/Ag

• substrates using pulsed laser deposition (PLD) and magnetron sputtering (MS) and their evaluation as potential substrates for surface-enhanced Raman spectroscopy (SERS) are reported. Ag layers of comparable thicknesses were deposited using PLD and MS on nanostructured GaN platforms. All fabricated SERS

• substrates were examined regarding their optical properties using UV–vis spectroscopy and regarding their morphology using scanning electron microscopy. SERS properties of the fabricated GaN/Ag substrates were evaluated by measuring SERS spectra of 4-mercaptobenzoic acid molecules adsorbed on them. For all

Microneedle-based ocular drug delivery systems – recent advances and challenges

• Piotr Gadziński,
• Anna Froelich,
• Monika Wojtyłko,
• Antoni Białek,
• Julia Krysztofiak and
• Tomasz Osmałek

Beilstein J. Nanotechnol. 2022, 13, 1167–1184, doi:10.3762/bjnano.13.98

• 2020 ASME. This content is not subject to CC BY 4.0. The physical appearance of 20.06% GAN + 5% HA + 1% FS under (A) digital microscope and (B) scanning electron microscope (×131). Figure 7 was reprinted from [180], Journal of Drug Delivery Science and Technology, vol. 61, by P. Suriyaamporn; P

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• various metal nanostructures for improved performance. Figure 3 presents optical images of GaN-based blue LED and UV LED with different current-spreading layers (ITO, Ni on graphene, and graphene) [42]. For a particular injection current value, the turn-on voltages for blue LED recorded on various anodes

• device with Au nanospheres (EQE = 2.4 × 10−4). In addition to the shape of AuNP, their size also influences the performance of LED. To that end, AuNP of diameters 2 and 5 nm were combined with CNT and deposited onto a p-GaN-based anode in a multiquantum-well LED [45]. The EL spectra of these devices at

• in the entire visible spectrum: GaAsP (red), GaN (green, blue/green), PPV (yellow/green), MEH-PPV and BCHA-PPV (yellow/orange), PPE-PPV (blue), and MDMO-PPV (red) [77][78][79][80][81][82][83][84]. Among these polymers, PPV appears to be the most popular light-emitting polymer. Burroughes et al. have

The role of convolutional neural networks in scanning probe microscopy: a review

• Ido Azuri,
• Irit Rosenhek-Goldian,
• Neta Regev-Rudzki,
• Georg Fantner and
• Sidney R. Cohen

Beilstein J. Nanotechnol. 2021, 12, 878–901, doi:10.3762/bjnano.12.66

• videos approximately matched the experimental parameters for tracking submicrometer-scale particles in videos recorded from a light microscope [100][101]. A generative adversarial network (GAN) [102] comprises two adversarial networks, namely a generator network, which generates fake images that look

• photons. The network was trained with pairs of images with low S/N ratio as input, and images with high S/N ratio as the target output images [97]. By training a GAN to transform diffraction-limited input images into super-resolved ones, Wang et al. improved the resolution of wide-field images acquired

Reducing molecular simulation time for AFM images based on super-resolution methods

• Zhipeng Dou,
• Jianqiang Qian,
• Yingzi Li,
• Rui Lin,
• Jianhai Wang,
• Peng Cheng and
• Zeyu Xu

Beilstein J. Nanotechnol. 2021, 12, 775–785, doi:10.3762/bjnano.12.61

• of deep learning in super-resolution methods many other models have been proposed, such as VGG [49], Res Net [50], GAN [51], and VDSR [52]. The application of deep learning in super-resolution methods has been increasing in recent years, and it is also used in AFM to speed up imaging acquisition [31

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• graphene deposited on gallium nitride nanowires (GaN NWs) with different variations in height. The electric field induced in GaN predicted by theoretical calculations could reach 5 MV/cm [21]. This is an effect of high spontaneous and piezoelectric polarisations in the wurtzite structure of GaN

• . Consequently, a high concentration of carriers on the GaN surface can be observed [22][23]. Previous studies of graphene on GaN NWs have shown that electric charges located on the top of the GaN NWs strongly impact Raman scattering in graphene, causing an enhancement of the spectrum [24][25]. Therefore

• distribution in the layer. Coulomb interaction between GaN NWs and graphene could also create vacancies in graphene and, consequently, increase the density of defects. In turn, as reported recently, strain and carrier concentration can be influenced and modified by graphene defects as well [27][28][29][30

Simulation of gas sensing with a triboelectric nanogenerator

• Kaiqin Zhao,
• Hua Gan,
• Huan Li,
• Ziyu Liu and
• Zhiyuan Zhu

Beilstein J. Nanotechnol. 2021, 12, 507–516, doi:10.3762/bjnano.12.41

• Kaiqin Zhao Hua Gan Huan Li Ziyu Liu Zhiyuan Zhu School of Microelectronics, Fudan University, Shanghai 200433, China Chongqing Key Laboratory of Nonlinear Circuits and Intelligent Information Processing, Southwest University, Chongqing 400715, China No.29 Research Institute of CETC, Chengdu

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• synthesize AlGaN/AlN/GaN heterojunction NWs with controllable size. A single NW is transferred to a flexible poly(ethylene terephthalate) substrate and fixed by indium tin oxide electrodes to form an ohmic contact for the strain sensor. An external mechanical stress is introduced to study the performance of

• investigated and systematically analyzed under compressive and tensile strain. Here, we describe a strain sensor that shows a great application potential in wearable integrated circuits, in health-monitoring devices, and in artificial intelligence. Keywords: AlGaN/AlN/GaN nanowires; flexible; piezotronic

• effect; strain sensors; strain tests; top-down method; Introduction Due to the non-centrosymmetric structure of the group-III nitride semiconductor materials (e.g., GaN, AlN, and AlGaN), spontaneous polarization (Psp) and piezoelectric polarization induced by lattice mismatch (Plm) are inevitably

Light–matter interactions in two-dimensional layered WSe₂ for gauging evolution of phonon dynamics

• Avra S. Bandyopadhyay,
• Chandan Biswas and
• Anupama B. Kaul

Beilstein J. Nanotechnol. 2020, 11, 782–797, doi:10.3762/bjnano.11.63

• nanoparticle (≈1.4 ps) [59], and 1L graphene (≈1.2 ps) [60]. We compared our results with the phonon lifetimes of conventional bulk 3D materials such as GaN [38][61], AlN [61], ZnO [61] and the values are provided in Table 3. Similar to τP, here we also define a define a parameter, the temperature-dependent

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

• at an even more emerging stage of development that can serve as alternative material platforms. These are generally the wide-bandgap group II–VI and III–V materials, such GaN [32][33][34] and ZnO [35][36][37], and low-dimensional van der Waals materials, including the transition metal dichalcogenide

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

• Markus Tautz,
• Maren T. Kuchenbrod,
• Joachim Hertkorn,
• Robert Weinberger,
• Martin Welzel,
• Arno Pfitzner and
• David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

• structure of a GaN layer stack grown by metal organic chemical vapour deposition (MOCVD) was varied in the unintentionally doped u-GaN bulk region. Different sequences of 2D and 3D grown layers led to a variation in dislocation density, which was monitored by photoluminescence microscopy (PLM) and X-ray

• progress in small time increments with high precision. Thereby, the disadvantages of other techniques such as determination of weight loss or height difference were overcome, achieving high accuracy and reproducibility. Keywords: etching; GaN; ICP-OES; KOH; LED; Introduction The light emitting diode (LED

• ) has become the basis of modern energy-efficient lighting technology over the last 30 years [1]. Especially the binary III–V semiconductor gallium nitride (GaN) is very useful for consumer lighting application. The high band gap energy of 3.4 eV at room temperature permits the production of blue and

Review of advanced sensor devices employing nanoarchitectonics concepts

• Katsuhiko Ariga,
• Tatsuyuki Makita,
• Masato Ito,
• Taizo Mori,
• Shun Watanabe and
• Jun Takeya

Beilstein J. Nanotechnol. 2019, 10, 2014–2030, doi:10.3762/bjnano.10.198

• packed cells, a large-sized organic electrochemical transistor is advantageous. On the other hand, the high frequency related information of leaky cells can be effectively monitored by smaller organic electrochemical transistors. Biosensors based on the electrical double layer gated AlGaN/GaN high

Optimization and performance of nitrogen-doped carbon dots as a color conversion layer for white-LED applications

• Tugrul Guner,
• Hurriyet Yuce,
• Didem Tascioglu,
• Eren Simsek,
• Umut Savaci,
• Aziz Genc,
• Servet Turan and
• Mustafa M. Demir

Beilstein J. Nanotechnol. 2019, 10, 2004–2013, doi:10.3762/bjnano.10.197

• –549 nm. These Si-CDots were used as the color conversion and encapsulation layers of a commercially available GaN blue LED chip. The authors report that the luminous efficacy of radiation (LER) of the resulting Si-CDot WLED is 70.93 lm/W, the CIE coordinates are (0.28, 0.35), and the CRI is 69. In

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

• Wanli Yang,
• Shuaiqi Fan,
• Yuxing Liang and
• Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

• present are third-generation semiconductors, for instance, ZnO, GaN, CdS, and AlN, with wide bandgap, high breakdown electric field, high thermal conductivity, and even mechanical tunability [3]. They show numerous application prospects in electric devices and sensors, such as energy harvesters [4][5][6

• –GaN contact with different applied strains and bias voltages. In this paper, a model is proposed to study diffusion of NEMC in a mechanically loaded piezoelectric p–n junction with applied bias voltage. In section “I–V characteristics of a mechanically loaded piezoelectric p–n junction”, the solving

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

• David van Treeck,
• Johannes Ledig,
• Gregor Scholz,
• Jonas Lähnemann,
• Mattia Musolino,
• Abbes Tahraoui,
• Oliver Brandt,
• Andreas Waag,
• Henning Riechert and
• Lutz Geelhaar

Beilstein J. Nanotechnol. 2019, 10, 1177–1187, doi:10.3762/bjnano.10.117

• ) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW

• approach, single NWs can be directly contacted with a probe tip installed in a scanning electron microscope (SEM). For instance, using this technique, Lee et al. studied the current–voltage (I–V) characteristics of single GaN-based NW LEDs in the ensemble. However, they were not able to measure the

• respective electroluminescence (EL) signal [6]. Yet another approach was implemented by Bavencove et al. and Musolino and co-workers [4][7]. They did not contact single (In,Ga)N/GaN NWs with a probe tip, but detected diffraction-limited EL spots in the working ensemble device using a confocal microscope

Revisiting semicontinuous silver films as surface-enhanced Raman spectroscopy substrates

• Malwina Liszewska,
• Bogusław Budner,
• Małgorzata Norek,
• Bartłomiej J. Jankiewicz and
• Piotr Nyga

Beilstein J. Nanotechnol. 2019, 10, 1048–1055, doi:10.3762/bjnano.10.105

• -structured surfaces made of glass [25][26], GaN [27][28][29], Si [30], TiO2 [31], Al2O3 [32], Ti [33], polymers [34], or planar surfaces coated with nano/microspheres resulting in metal film on nanospheres MFON [35][36], and Au nanocrescents on a monolayer of polystyrene nanospheres [37]. Additionally

Tungsten disulfide-based nanocomposites for photothermal therapy

• Tzuriel Levin,
• Hagit Sade,
• Rina Ben-Shabbat Binyamini,
• Maayan Pour,
• Iftach Nachman and
• Jean-Paul Lellouche

Beilstein J. Nanotechnol. 2019, 10, 811–822, doi:10.3762/bjnano.10.81

• Tzuriel Levin Hagit Sade Rina Ben-Shabbat Binyamini Maayan Pour Iftach Nachman Jean-Paul Lellouche Institute of Nanotechnology and Advanced Materials & Department of Chemistry, Faculty of Exact Sciences, Bar-Ilan University, Ramat Gan, 5290002, Israel Department of Biochemistry and Molecular

Towards rare-earth-free white light-emitting diode devices based on the combination of dicyanomethylene and pyranine as organic dyes supported on zinc single-layered hydroxide

• Jeff L. Nyalosaso,
• Rachod Boonsin,
• Pierre Vialat,
• Damien Boyer,
• Geneviève Chadeyron,
• Rachid Mahiou and
• Fabrice Leroux

Beilstein J. Nanotechnol. 2019, 10, 760–770, doi:10.3762/bjnano.10.75

• -emitting diode (LED); pyranine; zinc hydroxyacetate; Introduction Light-emitting diode (LED) devices are the most developed lighting systems today. 95% of LEDs found on the market generate white light by combining the blue light of a semiconductor diode (GaN or InGaN) with the broad yellow emission of the

• . The optical properties of the luminescent wet hybrid materials and films were recorded. Finally, a down-conversion pseudo-white LED was designed by simply associating, in remote-phosphor configuration, silicone/SLH-dye composite film and a GaN LED emitting at 450 nm. Composite films with a single dye

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• combined with CVD. As another example, 5 nm GaN quantum dots were deposited by Crozier [86] by EBID from a specially tailored precursor resulting in high-quality uniform deposits on a thin film of Si/SiO2. Shimojo [87] demonstrated the deposition of self-standing nanorods, 10 nm in diameter, by electrons

Oriented zinc oxide nanorods: A novel saturable absorber for lasers in the near-infrared

• Pavel Loiko,
• Tanujjal Bora,
• Josep Maria Serres,
• Haohai Yu,
• Magdalena Aguiló,
• Francesc Díaz,
• Uwe Griebner,
• Valentin Petrov,
• Xavier Mateos and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2018, 9, 2730–2740, doi:10.3762/bjnano.9.255

• due to the high sensitivity of ZnO to chemical environments [6], for light-emitting diodes due to the compatibility with the GaN technology and random lasing [7] (in the blue, around 0.390 µm), and in dye-sensitized solar cells [8]. The absorption and emission properties of the ZnO nanomaterials are

Two-dimensional photonic crystals increasing vertical light emission from Si nanocrystal-rich thin layers

• Lukáš Ondič,
• Marian Varga,
• Ivan Pelant,
• Alexander Kromka,
• Karel Hruška and
• Robert G. Elliman

Beilstein J. Nanotechnol. 2018, 9, 2287–2296, doi:10.3762/bjnano.9.213

• for photonic nanostructures, such as nanoimprinting [13][16], microsphere-based lithography [17] or laser processing [18], which may open up ways towards practical applications of 2D PhCs. The latter method, for example, enabled to enhance the light extraction from InGaN/GaN quantum wells on a

Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

• Nan Guan,
• Andrey Babichev,
• Martin Foldyna,
• Dmitry Denisov,
• François H. Julien and
• Maria Tchernycheva

Beilstein J. Nanotechnol. 2018, 9, 2248–2254, doi:10.3762/bjnano.9.209

• communication systems are required [5][6]. The technology for visible wavelength PICs is much less mature than for IR PICs, and different approaches have been explored. One exploratory approach for visible photonics consists of the monolithic integration of InGaN emitters/detectors with GaN-based waveguides [7

• ][8][9]. This approach presents the advantage of providing both passive and active elements, however it brings many fabrication challenges (such as the necessity of low-loss GaN waveguides, etc). For passive photonic circuits used in the visible light range, SiN circuitry is gaining increasing

• extensive research on NW integrated platforms [28][29][30]. The first important step is the on-chip manipulation of light, which can be achieved by integrating NW emitters and detectors with waveguides. Park et al. demonstrated the coupling between an electrically pumped single InGaN/GaN NW LED and a 2D

Light extraction efficiency enhancement of flip-chip blue light-emitting diodes by anodic aluminum oxide

• Yi-Ru Huang,
• Yao-Ching Chiu,
• Kuan-Chieh Huang,
• Shao-Ying Ting,
• Po-Jui Chiang,
• Chih-Ming Lai,
• Chun-Ping Jen,
• Snow H. Tseng and
• Hsiang-Chen Wang

Beilstein J. Nanotechnol. 2018, 9, 1602–1612, doi:10.3762/bjnano.9.152

• the light extraction efficiency (LEE) of the LED [10]. Ding et al. fabricated a LED with enhanced LEE by depositing a patterned sapphire substrate (PSS) on a flip-chip LED with GaN as a base layer [11]. Shei et al. enhanced the LEE of LEDs by 27% by producing a microstructure on the surface of LEDs

• with Ga-doped zinc oxide (GZO)/GaN as the base layer and then reducing the total reflectivity by changing the shape, thickness, and density of the microstructure through dry etching [12]. Li et al. increased the LEE of an InGaN-monolayer quantum-well LED by 1.8–1.9 times relative to that of a

• traditional LED by producing a TiO2 microstructure array on p-GaN through dipping and rapid convective deposition and using noncrystalline TiO2 and anatase TiO2 with a diameter of 520 nm [13]. Huang et al. used Zn and Mg for ion implantation at the GZO thin layer and then adopted rapid thermal annealing to